Shuttling a single charge across a one-dimensional array of silicon quantum dots

Significant advances have been made towards fault-tolerant operation of silicon spin qubits, with single qubit fidelities exceeding 99.9%, several demonstrations of two-qubit gates based on exchange coupling, and the achievement of coherent single spin-photon coupling. Coupling arbitrary pairs of spatially separated qubits in a quantum register poses a significant challenge as most qubit systems are constrained to two dimensions with nearest neighbor connectivity. For spins in silicon, new methods for quantum state transfer should be developed to achieve connectivity beyond nearest-neighbor exchange. Here we demonstrate shuttling of a single electron across a linear array of nine series-coupled silicon quantum dots in ~50 ns via a series of pairwise interdot charge transfers. By constructing more complex pulse sequences we perform parallel shuttling of two and three electrons at a time through the array. These experiments demonstrate a scalable approach to physically transporting single electrons across large silicon quantum dot arrays.

Quadrupolar Exchange-Only Spin Qubit

We propose a quadrupolar exchange-only spin qubit that is highly robust against charge noise and nuclear spin dephasing, the dominant decoherence mechanisms in quantum dots. The qubit consists of four electrons trapped in three quantum dots, and operates in a decoherence-free subspace to mitigate dephasing due to nuclear spins. To reduce sensitivity to charge noise, the qubit can be completely operated at an extended charge noise sweet spot that is first-order insensitive to electrical fluctuations. Because of on-site exchange mediated by the Coulomb interaction, the qubit energy splitting is electrically controllable and can amount to several GHz even in the "off" configuration, making it compatible with conventional microwave cavities.

Erratum: Microwave Detection of Electron-Phonon Interactions in a Cavity-Coupled Double Quantum Dot [Phys. Rev. Lett. 120, 097701 (2018)]

This corrects the article DOI: 10.1103/PhysRevLett.120.097701.

Realizing a Circuit Analog of an Optomechanical System with Longitudinally Coupled Superconducting Resonators

We realize a superconducting circuit analog of the generic cavity-optomechanical Hamiltonian by longitudinally coupling two superconducting resonators, which are an order of magnitude different in frequency. We achieve longitudinal coupling by embedding a superconducting quantum interference device into a high frequency resonator, making its resonance frequency depend on the zero point current fluctuations of a nearby low frequency LC resonator. By applying sideband drive fields we enhance the intrinsic coupling strength of about 15 kHz up to 280 kHz by controlling the amplitude of the drive field. Our results pave the way towards the exploration of optomechanical effects in a fully superconducting platform and could enable quantum optics experiments with photons in the yet unexplored radio frequency band.

Microwave Detection of Electron-Phonon Interactions in a Cavity-Coupled Double Quantum Dot

Quantum confinement leads to the formation of discrete electronic states in quantum dots. Here we probe electron-phonon interactions in a suspended InAs nanowire double quantum dot (DQD) that is electric-dipole coupled to a microwave cavity. We apply a finite bias across the wire to drive a steady state population in the DQD excited state, enabling a direct measurement of the electron-phonon coupling strength at the DQD transition energy. The amplitude and phase response of the cavity field exhibit oscillations that are periodic in the DQD energy level detuning due to the phonon modes of the nanowire. The observed cavity phase shift is consistent with theory that predicts a renormalization of the cavity center frequency by coupling to phonons.

High-Resolution Valley Spectroscopy of Si Quantum Dots

We study an accumulation mode Si/SiGe double quantum dot (DQD) containing a single electron that is dipole coupled to microwave photons in a superconducting cavity. Measurements of the cavity transmission reveal dispersive features due to the DQD valley states in Si. The occupation of the valley states can be increased by raising the temperature or applying a finite source-drain bias across the DQD, resulting in an increased signal. Using the cavity input-output theory and a four-level model of the DQD, it is possible to efficiently extract valley splittings and the inter- and intravalley tunnel couplings.

Threshold Dynamics of a Semiconductor Single Atom Maser

We demonstrate a single atom maser consisting of a semiconductor double quantum dot (DQD) that is embedded in a high-quality-factor microwave cavity. A finite bias drives the DQD out of equilibrium, resulting in sequential single electron tunneling and masing. We develop a dynamic tuning protocol that allows us to controllably increase the time-averaged repumping rate of the DQD at a fixed level detuning, and quantitatively study the transition through the masing threshold. We further examine the crossover from incoherent to coherent emission by measuring the photon statistics across the masing transition. The observed threshold behavior is in agreement with an existing single atom maser theory when small corrections from lead emission are taken into account.

Electron Spin Resonance at the Level of 10^{4} Spins Using Low Impedance Superconducting Resonators

We report on electron spin resonance measurements of phosphorus donors localized in a 200  μm^{2} area below the inductive wire of a lumped element superconducting resonator. By combining quantum limited parametric amplification with a low impedance microwave resonator design, we are able to detect around 2×10^{4} spins with a signal-to-noise ratio of 1 in a single shot. The 150 Hz coupling strength between the resonator field and individual spins is significantly larger than the 1-10 Hz coupling rates obtained with typical coplanar waveguide resonator designs. Because of the larger coupling rate, we find that spin relaxation is dominated by radiative decay into the resonator and dependent upon the spin-resonator detuning, as predicted by Purcell.

Sisyphus Thermalization of Photons in a Cavity-Coupled Double Quantum Dot

We investigate the nonclassical states of light that emerge in a microwave resonator coupled to a periodically driven electron in a nanowire double quantum dot (DQD). Under certain drive configurations, we find that the resonator approaches a thermal state at the temperature of the surrounding substrate with a chemical potential given by a harmonic of the drive frequency. Away from these thermal regions we find regions of gain and loss, where the system can lase, or regions where the DQD acts as a single-photon source. These effects are observable in current devices and have broad utility for quantum optics with microwave photons.

Injection Locking of a Semiconductor Double Quantum Dot Micromaser

Emission linewidth is an important figure of merit for masers and lasers. We recently demonstrated a semiconductor double quantum dot (DQD) micromaser where photons are generated through single electron tunneling events. Charge noise directly couples to the DQD energy levels, resulting in a maser linewidth that is more than 100 times larger than the Schawlow-Townes prediction. Here we demonstrate a linewidth narrowing of more than a factor 10 by locking the DQD emission to a coherent tone that is injected to the input port of the cavity. We measure the injection locking range as a function of cavity input power and show that it is in agreement with the Adler equation. The position and amplitude of distortion sidebands that appear outside of the injection locking range are quantitatively examined. Our results show that this unconventional maser, which is impacted by strong charge noise and electron-phonon coupling, is well described by standard laser models.

Phonon-assisted gain in a semiconductor double quantum dot maser

We develop a microscopic model for the recently demonstrated double-quantum-dot maser. In characterizing the gain of this device we find that, in addition to the direct stimulated emission of photons, there is a large contribution from the simultaneous emission of a photon and a phonon, i.e., the phonon sideband. We show that this phonon-assisted gain typically dominates the overall gain, which leads to masing. Recent experimental data are well fit with our model.

Photon emission from a cavity-coupled double quantum dot

We study a voltage biased InAs double quantum dot (DQD) that is coupled to a superconducting transmission line resonator. Inelastic tunneling in the DQD is mediated by electron phonon coupling and coupling to the cavity mode. We show that electronic transport through the DQD leads to photon emission from the cavity at a rate of 10 MHz. With a small cavity drive field, we observe a gain of up to 15 in the cavity transmission. Our results are analyzed in the context of existing theoretical models and suggest that it may be necessary to account for inelastic tunneling processes that proceed via simultaneous emission of a phonon and a photon.

Fast room-temperature phase gate on a single nuclear spin in diamond

Nuclear spins support long lived quantum coherence due to weak coupling to the environment, but are difficult to rapidly control using nuclear magnetic resonance as a result of the small nuclear magnetic moment. We demonstrate a fast ∼500  ns nuclear spin phase gate on a (14)N nuclear spin qubit intrinsic to a nitrogen-vacancy center in diamond. The phase gate is enabled by the hyperfine interaction and off-resonance driving of electron spin transitions. Repeated applications of the phase gate bang-bang decouple the nuclear spin from the environment, locking the spin state for up to ∼140  μs.

Extreme harmonic generation in electrically driven spin resonance

We report the observation of multiple harmonic generation in electric dipole spin resonance in an InAs nanowire double quantum dot. The harmonics display a remarkable detuning dependence: near the interdot charge transition as many as eight harmonics are observed, while at large detunings we only observe the fundamental spin resonance condition. The detuning dependence indicates that the observed harmonics may be due to Landau-Zener transition dynamics at anticrossings in the energy level spectrum.

Charge relaxation in a single-electron Si/SiGe double quantum dot

We measure the interdot charge relaxation time T1 of a single electron trapped in an accumulation mode Si/SiGe double quantum dot. The energy level structure of the charge qubit is determined using photon assisted tunneling, which reveals the presence of a low-lying excited state. We systematically measure T1 as a function of detuning and interdot tunnel coupling and show that it is tunable over four orders of magnitude, with a maximum of 45  μs for our device configuration.

Cavity-mediated entanglement generation via Landau-Zener interferometry

We demonstrate quantum control and entanglement generation using a Landau-Zener beam splitter formed by coupling two transmon qubits to a superconducting cavity. Single passage through the cavity-mediated qubit-qubit avoided crossing provides a direct test of the Landau-Zener transition formula. Consecutive sweeps result in Landau-Zener-Stückelberg interference patterns, with a visibility that can be sensitively tuned by adjusting the level velocity through both the nonadiabatic and adiabatic regimes. Two-qubit state tomography indicates that a Bell state can be generated via a single passage, with a fidelity of 78% limited by qubit relaxation.

Coherent adiabatic spin control in the presence of charge noise using tailored pulses

We study finite-time Landau-Zener transitions at a singlet-triplet level crossing in a GaAs double quantum dot, both experimentally and theoretically. Sweeps across the anticrossing in the high driving speed limit result in oscillations with a small visibility. Here we demonstrate how to increase the oscillation visibility while keeping sweep times shorter than T(2)(*) using a tailored pulse with a detuning dependent level velocity. Our results show an improvement of a factor of ~2.9 for the oscillation visibility. In particular, we were able to obtain a visibility of ~0.5 for Stückelberg oscillations, which demonstrates the creation of an equally weighted superposition of the qubit states.

Controlled MOCVD growth of Bi2Se3 topological insulator nanoribbons

Topological insulators are a new class of materials that support topologically protected electronic surface states. Potential applications of the surface states in low dissipation electronic devices have motivated efforts to create nanoscale samples with large surface-to-volume ratios and highly controlled stoichiometry. Se vacancies in Bi(2)Se(3) give rise to bulk conduction, which masks the transport properties of the surface states. We have therefore developed a new route for the synthesis of topological insulator nanostructures using metalorganic chemical vapour deposition (MOCVD). MOCVD allows control of the Se/Bi flux ratio during growth. With the aim of rational growth, we vary the Se/Bi flux ratio, growth time, and substrate temperature, and observe morphological changes which indicate a growth regime in which nanoribbon formation is limited by the Bi precursor mass flow. MOCVD growth of Bi(2)Se(3) nanostructures occurs via a distinct growth mechanism that is nucleated by gold nanoparticles at the base of the nanoribbon. By tuning the reaction conditions, we obtain either single-crystalline ribbons up to 10 μm long or thin micron-sized platelets.

Radio frequency charge parity meter

We demonstrate a total charge parity measurement by detecting the radio frequency signal that is reflected by a lumped-element resonator coupled to a single InAs nanowire double quantum dot. The high frequency response of the circuit is used to probe the effects of the Pauli exclusion principle at interdot charge transitions. Even parity charge transitions show a striking magnetic field dependence that is due to a singlet-triplet transition, while odd parity transitions are relatively insensitive to a magnetic field. The measured response agrees well with cavity input-output theory, allowing accurate measurements of the interdot tunnel coupling and the resonator-charge coupling rate g(c)/2π~17 MHz.

Structural and electrical characterization of Bi₂Se₃ nanostructures grown by metal-organic chemical vapor deposition

We characterize nanostructures of Bi(2)Se(3) that are grown via metal-organic chemical vapor deposition using the precursors diethyl selenium and trimethyl bismuth. By adjusting growth parameters, we obtain either single-crystalline ribbons up to 10 μm long or thin micrometer-sized platelets. Four-terminal resistance measurements yield a sample resistivity of 4 mΩ·cm. We observe weak antilocalization and extract a phase coherence length l(ϕ) = 178 nm and spin-orbit length l(so) = 93 nm at T = 0.29 K. Our results are consistent with previous measurements on exfoliated samples and samples grown via physical vapor deposition.

Field tuning the g factor in InAs nanowire double quantum dots

We study the effects of magnetic and electric fields on the g factors of spins confined in a two-electron InAs nanowire double quantum dot. Spin sensitive measurements are performed by monitoring the leakage current in the Pauli blockade regime. Rotations of single spins are driven using electric-dipole spin resonance. The g factors are extracted from the spin resonance condition as a function of the magnetic field direction, allowing determination of the full g tensor. Electric and magnetic field tuning can be used to maximize the g-factor difference and in some cases altogether quench the electric-dipole spin resonance response, allowing selective single spin control.

Quantum coherence in a one-electron semiconductor charge qubit

We study quantum coherence in a semiconductor charge qubit formed from a GaAs double quantum dot containing a single electron. Voltage pulses are applied to depletion gates to drive qubit rotations and noninvasive state readout is achieved using a quantum point contact charge detector. We measure a maximum coherence time of ∼7 ns at the charge degeneracy point, where the qubit level splitting is first-order insensitive to gate voltage fluctuations. We compare measurements of the coherence time as a function of detuning with numerical simulations and predictions from a 1/f noise model.

Exchange control of nuclear spin diffusion in a double quantum dot

The influence of gate-controlled two-electron exchange on the relaxation of nuclear polarization in small ensembles (N∼10(6)) of nuclear spins is examined in a GaAs double quantum dot system. Waiting in the (2,0) charge configuration, which has large exchange splitting, reduces the nuclear diffusion rate compared to that of the (1,1) configuration. Matching exchange to Zeeman splitting significantly increases the nuclear diffusion rate.

Correlating the nanostructure and electronic properties of InAs nanowires

The electronic properties and nanostructure of InAs nanowires are correlated by creating multiple field effect transistors (FETs) on nanowires grown to have low and high defect density segments. 4.2 K carrier mobilities are approximately 4x larger in the nominally defect free segments of the wire. We also find that dark field optical intensity is correlated with the mobility, suggesting a simple route for selecting wires with a low defect density. At low temperatures, FETs fabricated on high defect density segments of InAs nanowires showed transport properties consistent with single electron charging, even on devices with low resistance ohmic contacts. The charging energies obtained suggest quantum dot formation at defects in the wires. These results reinforce the importance of controlling the defect density in order to produce high quality electrical and optical devices using InAs nanowires.

Development and operation of research-scale III-V nanowire growth reactors

III-V nanowires are useful platforms for studying the electronic and mechanical properties of materials at the nanometer scale. However, the costs associated with commercial nanowire growth reactors are prohibitive for most research groups. We developed hot-wall and cold-wall metal organic vapor phase epitaxy reactors for the growth of InAs nanowires, which both use the same gas handling system. The hot-wall reactor is based on an inexpensive quartz tube furnace and yields InAs nanowires for a narrow range of operating conditions. Improvement of crystal quality and an increase in growth run to growth run reproducibility are obtained using a homebuilt UHV cold-wall reactor with a base pressure of 2x10(-9) Torr. A load lock on the UHV reactor prevents the growth chamber from being exposed to atmospheric conditions during sample transfers. Nanowires grown in the cold-wall system have a low defect density, as determined using transmission electron microscopy, and exhibit field effect gating with mobilities approaching 16,000 cm(2)/(V s).

Measurement of temporal correlations of the overhauser field in a double quantum dot

In quantum dots made from materials with nonzero nuclear spins, hyperfine coupling creates a fluctuating effective Zeeman field (Overhauser field) felt by electrons, which can be a dominant source of spin qubit decoherence. We characterize the spectral properties of the fluctuating Overhauser field in a GaAs double quantum dot by measuring correlation functions and power spectra of the rate of singlet-triplet mixing of two separated electrons. Away from zero field, spectral weight is concentrated below 10 Hz, with approximately 1/f2 dependence on frequency f. This is consistent with a model of nuclear spin diffusion, and indicates that decoherence can be largely suppressed by echo techniques.

Suppressing spin qubit dephasing by nuclear state preparation

Coherent spin states in semiconductor quantum dots offer promise as electrically controllable quantum bits (qubits) with scalable fabrication. For few-electron quantum dots made from gallium arsenide (GaAs), fluctuating nuclear spins in the host lattice are the dominant source of spin decoherence. We report a method of preparing the nuclear spin environment that suppresses the relevant component of nuclear spin fluctuations below its equilibrium value by a factor of approximately 70, extending the inhomogeneous dephasing time for the two-electron spin state beyond 1 microsecond. The nuclear state can be readily prepared by electrical gate manipulation and persists for more than 10 seconds.

Dynamic nuclear polarization with single electron spins

We polarize nuclear spins in a GaAs double quantum dot by controlling two-electron spin states near the anticrossing of the singlet (S) and m(S)= +1 triplet (T+) using pulsed gates. An initialized S state is cyclically brought into resonance with the T+ state, where hyperfine fields drive rapid rotations between S and T+, "flipping" an electron spin and "flopping" a nuclear spin. The resulting Overhauser field approaches 80 mT, in agreement with a simple rate-equation model. A self-limiting pulse sequence is developed that allows the steady-state nuclear polarization to be set using a gate voltage.

Effect of exchange interaction on spin dephasing in a double quantum dot

We measure singlet-triplet dephasing in a two-electron double quantum dot in the presence of an exchange interaction which can be electrically tuned from much smaller to much larger than the hyperfine energy. Saturation of dephasing and damped oscillations of the spin correlator as a function of time are observed when the two interaction strengths are comparable. Both features of the data are compared with predictions from a quasistatic model of the hyperfine field.

Coherent Manipulation of Coupled Electron Spins in Semiconductor Quantum Dots

We demonstrated coherent control of a quantum two-level system based on two-electron spin states in a double quantum dot, allowing state preparation, coherent manipulation, and projective readout. These techniques are based on rapid electrical control of the exchange interaction. Separating and later recombining a singlet spin state provided a measurement of the spin dephasing time, T2*, of approximately 10 nanoseconds, limited by hyperfine interactions with the gallium arsenide host nuclei. Rabi oscillations of two-electron spin states were demonstrated, and spin-echo pulse sequences were used to suppress hyperfine-induced dephasing. Using these quantum control techniques, a coherence time for two-electron spin states exceeding 1 microsecond was observed.

Triplet–singlet spin relaxation via nuclei in a double quantum dot

The spin of a confined electron, when oriented originally in some direction, will lose memory of that orientation after some time. Physical mechanisms leading to this relaxation of spin memory typically involve either coupling of the electron spin to its orbital motion or to nuclear spins. Relaxation of confined electron spin has been previously measured only for Zeeman or exchange split spin states, where spin-orbit effects dominate relaxation; spin flips due to nuclei have been observed in optical spectroscopy studies. Using an isolated GaAs double quantum dot defined by electrostatic gates and direct time domain measurements, we investigate in detail spin relaxation for arbitrary splitting of spin states. Here we show that electron spin flips are dominated by nuclear interactions and are slowed by several orders of magnitude when a magnetic field of a few millitesla is applied. These results have significant implications for spin-based information processing.

Manipulation of a single charge in a double quantum dot

We manipulate a single electron in a fully tunable double quantum dot using microwave excitation. Under resonant conditions, microwaves drive transitions between the (1,0) and (0,1) charge states of the double dot. Local quantum point contact charge detectors enable a direct measurement of the photon-induced change in occupancy of the charge states. From charge sensing measurements, we find T1 approximately 16 ns and a lower bound estimate for T*(2) of 400 ps for the charge two-level system.

Spin-dependent transport in molecular tunnel junctions

We present measurements of magnetic tunnel junctions made using a self-assembled-monolayer molecular barrier. Ni-octanethiol-Ni samples were fabricated in a nanopore geometry. The devices exhibit significant changes in resistance as the angle between the magnetic moments in the two electrodes is varied, demonstrating that low-energy electrons can traverse the molecular barrier while remaining spin polarized. An analysis of the voltage and temperature dependence of the data suggests that the spin-polarized transport signals can be degraded by localized states in the molecular barriers.

Measurements of strongly anisotropic g factors for spins in single quantum states

We have measured the full angular dependence, as a function of the direction of magnetic field, for the Zeeman splitting of individual energy states in copper nanoparticles. The g factors for spin splitting are highly anisotropic, with angular variations as large as a factor of 5. The angular dependence fits well to ellipsoids. Both the principal-axis directions and g-factor magnitudes vary between different energy levels within one nanoparticle. The variations agree quantitatively with random-matrix theory predictions which incorporate spin-orbit coupling.

Studies of spin-orbit scattering in noble-metal nanoparticles using energy-level tunneling spectroscopy

The effects of spin-orbit scattering on discrete electronic energy levels are studied in copper, silver, and gold nanoparticles. Level-to-level fluctuations of the effective g-factor for Zeeman splitting are characterized, and the statistics are found to be well described by random matrix theory predictions. The strength of spin-orbit scattering increases with atomic number and also varies between nanoparticles made of the same metal. We compare the spin-orbit scattering rates in the nanoparticles to weak-localization measurements on larger samples.