Atomic-scale diffusion rates during growth of thin metal films on weakly-interacting substrates

We use a combined experimental and theoretical approach to study the rates of surface diffusion processes that govern early stages of thin Ag and Cu film morphological evolution on weakly-interacting amorphous carbon substrates. Films are deposited by magnetron sputtering, at temperatures T_S between 298 and 413 K, and vapor arrival rates F in the range 0.08 to 5.38 monolayers/s. By employing in situ and real-time sheet-resistance and wafer-curvature measurements, we determine the nominal film thickness Θ at percolation (Θ_perc) and continuous film formation (Θ_cont) transition. Subsequently, we use the scaling behavior of Θ_perc and Θ_cont as a function of F and T_s, to estimate, experimentally, the temperature-dependent diffusivity on the substrate surface, from which we calculate Ag and Cu surface migration energy barriers \documentclass[12pt]{minimal} \usepackage{amsmath} \usepackage{wasysym} \usepackage{amsfonts} \usepackage{amssymb} \usepackage{amsbsy} \usepackage{mathrsfs} \usepackage{upgreek} \setlength{\oddsidemargin}{-69pt} \begin{document}$${{\boldsymbol{E}}}_{{\boldsymbol{D}}}^{{\bf{\exp }}}$$\end{document}EDexp and attempt frequencies \documentclass[12pt]{minimal} \usepackage{amsmath} \usepackage{wasysym} \usepackage{amsfonts} \usepackage{amssymb} \usepackage{amsbsy} \usepackage{mathrsfs} \usepackage{upgreek} \setlength{\oddsidemargin}{-69pt} \begin{document}$${{\boldsymbol{\nu }}}_{{\bf{0}}}^{{\bf{\exp }}}$$\end{document}ν0exp. By critically comparing \documentclass[12pt]{minimal} \usepackage{amsmath} \usepackage{wasysym} \usepackage{amsfonts} \usepackage{amssymb} \usepackage{amsbsy} \usepackage{mathrsfs} \usepackage{upgreek} \setlength{\oddsidemargin}{-69pt} \begin{document}$${{\boldsymbol{E}}}_{{\boldsymbol{D}}}^{{\bf{\exp }}}$$\end{document}EDexp and \documentclass[12pt]{minimal} \usepackage{amsmath} \usepackage{wasysym} \usepackage{amsfonts} \usepackage{amssymb} \usepackage{amsbsy} \usepackage{mathrsfs} \usepackage{upgreek} \setlength{\oddsidemargin}{-69pt} \begin{document}$${{\boldsymbol{\nu }}}_{{\bf{0}}}^{{\bf{\exp }}}$$\end{document}ν0exp with literature data, as well as with results from our ab initio molecular dynamics simulations for single Ag and Cu adatom diffusion on graphite surfaces, we suggest that: (i) \documentclass[12pt]{minimal} \usepackage{amsmath} \usepackage{wasysym} \usepackage{amsfonts} \usepackage{amssymb} \usepackage{amsbsy} \usepackage{mathrsfs} \usepackage{upgreek} \setlength{\oddsidemargin}{-69pt} \begin{document}$${{\boldsymbol{E}}}_{{\boldsymbol{D}}}^{{\bf{\exp }}}$$\end{document}EDexp and \documentclass[12pt]{minimal} \usepackage{amsmath} \usepackage{wasysym} \usepackage{amsfonts} \usepackage{amssymb} \usepackage{amsbsy} \usepackage{mathrsfs} \usepackage{upgreek} \setlength{\oddsidemargin}{-69pt} \begin{document}$${{\boldsymbol{\nu }}}_{{\bf{0}}}^{{\bf{\exp }}}$$\end{document}ν0exp correspond to diffusion of multiatomic clusters, rather than to diffusion of monomers; and (ii) the mean size of mobile clusters during Ag growth is larger compared to that of Cu. The overall results of this work pave the way for studying growth dynamics in a wide range of technologically-relevant weakly-interacting film/substrate systems—including metals on 2D materials and oxides—which are building blocks in next-generation nanoelectronic, optoelectronic, and catalytic devices.

Semi-Empirical Force-Field Model for the Ti1-xAlxN (0 ≤ x ≤ 1) System

We present a modified embedded atom method (MEAM) semi-empirical force-field model for the Ti1-xAlxN (0 ≤ x ≤ 1) alloy system. The MEAM parameters, determined via an adaptive simulated-annealing (ASA) minimization scheme, optimize the model's predictions with respect to 0 K equilibrium volumes, elastic constants, cohesive energies, enthalpies of mixing, and point-defect formation energies, for a set of ≈40 elemental, binary, and ternary Ti-Al-N structures and configurations. Subsequently, the reliability of the model is thoroughly verified against known finite-temperature thermodynamic and kinetic properties of key binary Ti-N and Al-N phases, as well as properties of Ti1-xAlxN (0 < x < 1) alloys. The successful outcome of the validation underscores the transferability of our model, opening the way for large-scale molecular dynamics simulations of, e.g., phase evolution, interfacial processes, and mechanical response in Ti-Al-N-based alloys, superlattices, and nanostructures.

Coalescence dynamics of 3D islands on weakly-interacting substrates

We use kinetic Monte Carlo simulations and analytical modelling to study coalescence of three-dimensional (3D) nanoscale faceted silver island pairs on weakly-interacting fcc(111) substrates, with and without concurrent supply of mobile adatoms from the vapor phase. Our simulations show that for vapor flux arrival rates F < 1 monolayer/second (ML/s) coalescence manifests itself by one of the islands absorbing the other via sidewall facet migration. This process is mediated by nucleation and growth of two-dimensional (2D) layers on the island facets, while the supply of mobile atoms increases the nucleation probability and shortens the time required for coalescence completion. When F is increased above 1 ML/s, coalescence is predominantly governed by deposition from the vapor phase and the island pair reaches a compact shape via agglomeration. The crucial role of facets for the coalescence dynamics is further supported by a mean-field thermodynamic description of the nucleation energetics and kinetics. Our findings explain experimental results which show that two-dimensional film growth morphology on weakly-interacting substrates is promoted when the rate of island coalescence is suppressed. The present study also highlights that deviations of experimentally reported film morphological evolutions in weakly-interacting film/substrate systems from predictions based on the sintering and particle growth theories may be understood in light of the effect of deposition flux atoms on the energetics and kinetics of facet-layer nucleation during coalescence.