Depth sectioning using environmental and atomic-resolution STEM

(Scanning) transmission electron microscopy (TEM) images of samples in gas and liquid media are acquired with an environmental cell (EC) via silicon nitride membranes. The ratio of sample signal against the background is a significant factor for resolution. Depth-sectioning scanning TEM (STEM) is a promising technique that enhances the signal for a sample embedded in a matrix. It can increase the resolution to the atomic level, thereby enabling EC-STEM applications in important areas. This review introduces depth-sectioning STEM and its applications to high-resolution EC-STEM imaging of samples in gases and in liquids.

Development of temporal series 4D-STEM and application to relaxation time measurement

Diffraction patterns contain useful information about the materials. Recent developments in four-dimensional scanning transmission electron microscopy and the acquisition of the spatial distribution of diffraction patterns have produced significant results. The acquisition of a temporal series of diffractions is achieved for a stationary beam. However, the acquisition of spatiotemporal distribution of diffraction patterns has only been established under limited conditions. In this study, we developed a simple method that enables the recording of the spatiotemporal distribution of diffraction patterns and applied it to the relaxation time measurement that is robust to sample drift.

High Cathode Loading and Low-Temperature Operating Garnet-Based All-Solid-State Lithium Batteries - Material/Process/Architecture Optimization and Understanding of Cell Failure

All-solid-state lithium batteries (ASSLBs) are prepared using garnet-type solid electrolytes by quick liquid phase sintering (Q-LPS) without applying high pressure during the sintering. The cathode layers are quickly sintered with a heating rate of 50-100 K min-1 and a dwell time of 10 min. The battery performance is dramatically improved by simultaneously optimizing materials, processes, and architectures, and the initial discharge capacity of the cell with a LiCoO2 -loading of 8.1 mg reaches 1 mAh cm-2 and 130 mAh g-1 at 25 °C. The all-solid-state cell exhibits capacity at a reduced temperature (10 °C) or a relatively high rate (0.1 C) compared to the previous reports. The Q-LPS would be suitable for large-scale manufacturing of ASSLBs. The multiphysics analyses indicate that the internal stress reaches 1 GPa during charge/discharge, which would induce several mechanical failures of the cells: broken electron networks, broken ion networks, separation of interfaces, and delamination of layers. The experimental results also support these failures.

The Atomic Observation of the Structural Change Process in Pt Networks in Air Using Environmental Cell Scanning Transmission Electron Microscopy

The structural change in Pt networks composed of multiple chain connections among grains was observed in air at 1 atm using atomic-resolution environmental cell scanning transmission electron microscopy. An aberration-corrected incident electron probe with a wide convergence angle made it possible to increase the depth resolution that contributes to enhancing the signal-to-noise ratio of Pt network samples in air in an environmental cell, resulting in the achievement of atomic-resolution imaging. The exposure of the Pt networks to gas molecules under Brownian motion, stimulated by electron beams in the air, increases the collision probability between gas molecules and Pt networks, and the Pt networks are more intensely stressed from all directions than in a situation without electron irradiation. By increasing the electron beam dose rate, the structural change of the Pt networks became significant. Dynamic observation on an atomic scale suggested that the structural change of the networks was not attributed to the surface atomic-diffusion-induced step motion but mainly caused by the movement and deformation of unstable grains and grain boundaries. The oxidized surface layers may be one of the factors hindering the surface atomic step motion, mitigating the change in the size of the grains and grain boundaries.

Fabrication of Oxide-Based All-Solid-State Batteries by a Sintering Process Based on Function Sharing of Solid Electrolytes

Garnet-type Li7La3Zr2O12 (LLZ) has advantages of stability with Li metal and high Li+ ionic conductivity, achieving 1 × 10-3 S cm-1, but it is prone to react with electrode active materials during the sintering process. LISICON-type Li3.5Ge0.5V0.5O4 (LGVO) has the advantage of less reactivity with the electrode active material during the sintering process, but its ionic conductivity is on the order of 10-5 S cm-1. In this study, these two solid electrolytes are combined as a multilayer solid electrolyte sheet, where 2 μm thick LGVO films are coated on LLZ sheets to utilize the advantages of these two solid electrolytes. These two solid electrolytes adhere well through Ge diffusion without significant interfacial resistance. The LLZ-LGVO multilayer is combined with a LiCoO2 positive electrode and a lithium metal anode through annealing at 700 °C. The resultant all-solid-state battery can undergo repeated charge-discharge reactions for over 100 cycles at 25 or 60 °C. The LGVO coating suppresses the increases in the resistance from the solid electrolyte and interfacial resistance induced by annealing by ca. 1/40. As with sulfide-based all-solid-state batteries, function sharing of solid electrolytes will be a promising method for developing advanced oxide-based all-solid-state batteries through a sintering process.

Effect of Amorphous Carbon Coating on the Performance of Liquid Phase Transmission Electron Microscopy (LP-TEM) and the Dynamics of Enclosed Pt Nano-Colloids

Ultra-thin silicon nitride (SiN) membranes are critical in microfabrication-based liquid cells (LCs) for transmission electron microscopy. This study used a homemade LC with a 50-nm SiN membrane to study the dynamics of 2.58-nm platinum (Pt) nanoparticles (NPs) in approximately 200-nm deep water. When a strong beam with electron flux ranging from 2.5 × 103 to 1.4 ×106 e-/(nm2·s) was applied to resolve the NPs, the beam caused NP aggregation and even drilled a hole on the top membrane. The hole drilling was prevented by coating a 1-4-nm-thick amorphous carbon layer on both sides of the membrane. The NP aggregation rate also decreased with increasing carbon thickness. After overcoming the aforementioned issues, lattice fringes of the Pt NPs were visible when the NPs were attached to the membrane of the 4-nm-carbon-coated LC containing a thin liquid layer. The effects of the electron beam and carbon on the LC and Pt NPs were investigated and discussed. This work provides a reference for LC-TEM research using strong electron beams.

Tracking the emergence of epitaxial metal-oxide interfaces from precursor alloys

Heterointerfaces with an epitaxial relationship, self-assembled nanocomposites of Pt(111)/CeO₂(111) 60°, were successfully formed by simple oxidation of Pt₅Ce alloy. Oxygen dissolution into the alloy causes spacial periodic compositional perturbation by atomic segregation, specifically, by local diffusion of Pt and Ce atoms. A striped pattern of Pt and CeO₂ with a 4-5 nm periodicity formed through phase transformation of the Pt-rich alloy and oxidation of the Ce-rich alloy, respectively. Notably, a fully epitaxial relationship between the Pt and CeO₂ phases was observed even in the initial stage. With continued annealing, the crystals rotated into an energetically favorable orientation with respect to the remaining (111)Pt//(111)CeO₂. The alloy oxidation and its resulting nanoscale phase-separation behavior were verified in an ex situ annealing experiment of an alloy specimen, which had been first thinned by a focused ion beam. Changing the oxygen partial pressure to the reaction interface may alter the orientation relationship between the hexagonal close-packed Pt₅Ce structure and face-centered cubic Pt/CeO₂ structure, thereby altering the growth direction of the separated phases. These findings present a pathway for the self-assembly of epitaxial Pt(111)/CeO₂(111) interface and are expected to assist the structural design of metal-oxide nanocomposites.

Fabrication of a liquid cell for in situ transmission electron microscopy

Liquid cell transmission electron microscopy (LCTEM) enables imaging of dynamic processes in liquid with high spatial and temporal resolution. The widely used liquid cell (LC) consists of two stacking microchips with a thin wet sample sandwiched between them. The vertically overlapped electron-transparent membrane windows on the microchips provide passage for the electron beam. However, microchips with imprecise dimensions usually cause poor alignment of the windows and difficulty in acquiring high-quality images. In this study, we developed a new and efficient microchip fabrication process for LCTEM with a large viewing area (180 µm × 40 µm) and evaluated the resultant LC. The new positioning reference marks on the surface of the Si wafer dramatically improve the precision of dicing the wafer, making it possible to accurately align the windows on two stacking microchips. The precise alignment led to a liquid thickness of 125.6 nm close to the edge of the viewing area. The performance of our LC was demonstrated by in situ transmission electron microscopy imaging of the dynamic motions of 2-nm Pt particles. This versatile and cost-effective microchip production method can be used to fabricate other types of microchips for in situ electron microscopy.

The electric double layer effect and its strong suppression at Li+ solid electrolyte/hydrogenated diamond interfaces

The electric double layer (EDL) effect at solid electrolyte/electrode interfaces has been a key topic in many energy and nanoelectronics applications (e.g., all-solid-state Li⁺ batteries and memristors). However, its characterization remains difficult in comparison with liquid electrolytes. Herein, we use a novel method to show that the EDL effect, and its suppression at solid electrolyte/electronic material interfaces, can be characterized on the basis of the electric conduction characteristics of hydrogenated diamond(H-diamond)-based EDL transistors (EDLTs). Whereas H-diamond-based EDLT with a Li-Si-Zr-O Li⁺ solid electrolyte showed EDL-induced hole density modulation over a range of up to three orders of magnitude, EDLT with a Li-La-Ti-O (LLTO) Li⁺ solid electrolyte showed negligible enhancement, which indicates strong suppression of the EDL effect. Such suppression is attributed to charge neutralization in the LLTO, which is due to variation in the valence state of the Ti ions present. The method described is useful for quantitatively evaluating the EDL effect in various solid electrolytes.

Phase-transition-induced jumping, bending, and wriggling of single crystal nanofibers of coronene

For decades, it has been reported that some organic crystals suddenly crack, break, or jump when they are heated from room temperature. Recently, such crystals have been intensively studied both in fundamental science and for high-speed mechanical device applications. According to these studies, the sudden crystal motions have been attributed to structural phase transitions induced by heating. Stress created by the phase transition is released through the sudden and rapid motion of the crystals. Here we report that single crystal nanofibers of coronene exhibit a new type of ultrafast motion when they are cooled from room temperature and subsequently heated to room temperature. The nanofibers make centimeter-scale jumps accompanied by surprisingly unique behaviors such as sharp bending and wriggling. We found that the motions are caused by a significantly fast structural phase transition between two polymorphs of coronene. A theoretical investigation revealed that the sudden force generated by the phase transition together with the nanoscale dimensions and elastic properties create dynamical instability in the nanofibers that results in the motions. Our finding demonstrates the novel mechanism that leads to ultrafast, large deformation of organic crystals.

Highly Monochromatic Electron Emission from Graphene/Hexagonal Boron Nitride/Si Heterostructure

In this work, a planar electron emission device based on a graphene/hexagonal boron nitride (h-BN)/n-Si heterostructure is fabricated to realize highly monochromatic electron emission from a flat surface. The h-BN layer is used as an insulating layer to suppress electron inelastic scattering within the planar electron emission device. The energy spread of the emission device using the h-BN insulating layer is 0.28 eV based on the full-width at half-maximum (FWHM), which is comparable to a conventional tungsten field emitter. The characteristic spectral shape of the electron energy distributions reflected the electron distribution in the conduction band of the n-Si substrate. The results indicate that the inelastic scattering of electrons at the insulating layer is drastically suppressed by the h-BN layer. Furthermore, the maximum emission current density reached 2.4 A/cm², which is comparable to that of a conventional thermal cathode. Thus, the graphene/h-BN heterostructure is a promising material for planar electron emission devices to obtain a highly monochromatic electron beam and a high electron emission current density.

Comparative Analysis of Defects in Mg-Implanted and Mg-Doped GaN Layers on Freestanding GaN Substrates

Inefficient Mg-induced p-type doping has been remained a major obstacle in the development of GaN-based electronic devices for solid-state lighting and power applications. This study reports comparative structural analysis of defects in GaN layers on freestanding GaN substrates where Mg incorporation is carried out via two approaches: ion implantation and epitaxial doping. Scanning transmission electron microscopy revealed the existence of pyramidal and line defects only in Mg-implanted sample whereas Mg-doped sample did not show presence of these defects which suggests that nature of defects depends upon incorporation method. From secondary ion mass spectrometry, a direct correspondence is observed between Mg concentrations and location and type of these defects. Our investigations suggest that these pyramidal and line defects are Mg-rich species and their formation may lead to reduced free hole densities which is still a major concern for p-GaN-based material and devices. As freestanding GaN substrates offer a platform for realization of p-n junction-based vertical devices, comparative structural investigation of defects originated due to different Mg incorporation processes in GaN layers on such substrates is likely to give more insight towards understanding Mg self-compensation mechanisms and then optimizing Mg doping and/or implantation process for the advancement of GaN-based device technology.

Strain Relaxation in GaSb/GaAs(111)A Heteroepitaxy Using Thin InAs Interlayers

We have systematically studied the strain relaxation processes in GaSb heteroepitaxy on GaAs(111)A using thin InAs interlayers. The growth with 1 ML- and 2 ML-InAs leads to formation of an InAsSb-like layer, which induces tensile strain in GaSb films, whereas the GaSb films grown with thicker InAs layers (≥3 ML) are under compressive strain. As the InAs thickness is increased above 5 ML, the insertion of the InAs layer becomes less effective in the strain relaxation, leaving residual strain in GaSb films. This leads to the elastic deformation of the GaSb lattice, giving rise to the increase in the peak width of X-ray rocking curves.

Two-dimensional Gaussian fitting for precise measurement of lattice constant deviation from a selected-area diffraction map

Unlike X-ray diffraction or Raman techniques, which suffer from low spatial resolution, transmission electron microscopy can be used to obtain strain maps of nanoscaled materials and devices. Convergent-beam electron diffraction (CBED) and nanobeam electron diffraction (NBED) techniques detect the deviation of a lattice constant (i.e. an indicator of strain) within 0.01%; however, their use is restricted to beam-insensitive samples. Selected-area electron diffraction (SAED) does not have such limitations but has low spatial resolution and precision. The use of a spherical aberration corrector and a nanosized selected-area aperture improves the spatial resolution, but the precision is still low. In this study, a two-dimensional stage-scanning system is used to acquire arrays of diffraction patterns at different positions of the sample under fixed beam conditions. Data processing with iterative nonlinear least-squares fitting enabled the spot displacement for each point of the scan area to be measured with precision comparable to that of the CBED or NBED technique. The precise strain determination, in combination with the simplicity of the measurement process, makes the nanosized SAED technique competitive with other methods for strain mapping at nanoscale dimensions.

Fixation mechanisms of nanoparticles on substrates by electron beam irradiation

For applications such as the fabrication of plasmonic waveguides we developed a patterning technique to fabricate an array of nanoparticles on a substrate using focused electron beams (Noriki, T.; Abe, S.;.Kajikawa, K.; Shimojo, M. Beilstein J. Nanotechnol.2015,6, 1010-1015). This technique consists of three steps: Firstly, nanoparticles are placed over the entire surface of a substrate. Secondly, the nanoparticles are fixed on the substrate by focused electron beam irradiation. The electron beam decomposes the organic molecules located around the particle into amorphous carbon. The amorphous carbon immobilizes the particle on the substrate. Finally, the unfixed nanoparticles are removed. However, in this original technique, the area in which the nanoparticles were fixed was wider than the electron-probe size of a few nanometers. To understand this widening mechanisms, the effects of accelerating voltage, particle size and substrate material are investigated by means of both experiments and simulation. It is demonstrated that the fixing area is greatly affected by the electrons back-scattered by the substrate. The back-scattering leads to an increase in line width and thus reduces the resolution of this patterning technique.

Microstructural analysis and transport properties of MoO and MoC nanostructures prepared by focused electron beam-induced deposition

By electron-beam-induced deposition, we have succeeded in the direct fabrication of nanowires of molybdenum oxide (MoOx) and molybdenum carbide (MoC) on a SiO2 substrate set in a scanning electron microscope. In order to prepare MoOx specimens of high purity, a precursor gas of molybdenum hexacarbonyl [Mo(CO)6] is used, mixed with oxygen gas. On the other hand, MoC is grown by mixing H2O gas with the precursor gas. The electrical transport properties of the nanowires are investigated by the DC four-terminal method. A highly resistive MoOx nanowire prepared from an as-deposited specimen by annealing in air shows nonlinear current-voltage characteristics and a high photoconductivity. The resistivity ρ of an as-deposited amorphous MoC (a-MoC) nanowire takes its maximum at a temperature T ≈ 10 K and decreases to ≈ 0 with decreasing temperature. This behavior of ρ(T) indicates the possible occurrence of superconductivity in a-MoC nanowires. The characteristic of ρ(T) below the superconducting transition temperature Tc ≈ 4 K can be well explained by the quantum phase-slip model with a coherence length ξ(0) ≈ 8 nm at T = 0.

Self-assembled coronene nanofibers: optical waveguide effect and magnetic alignment

To fabricate organic nanofibers that function as active optical waveguides with semiconductor properties, a facile procedure was developed to grow single crystalline nanofibers via π-π stacking of the polycyclic aromatic molecule, coronene, through solution evaporation on a substrate. The fabricated nanofibers with millimeter-scale lengths have well-defined shapes, smooth surfaces, and low-defect structures. The nanofibers are demonstrated to function as efficient active waveguides that propagate their fluorescence (FL) along the fiber axis over their entire length. We further demonstrate that the nanofibers can be highly aligned on the substrate when solution evaporation is conducted in a magnetic field of 12 T. The mechanism of the magnetic alignment can be elucidated by considering the anisotropy of the diamagnetic susceptibility of a single coronene molecule and the crystal structure of a nanofiber. Owing to the high degree of alignment, the nanofibers rarely cross each other, allowing for measurement of the waveguiding properties of single isolated nanofibers. The nanofibers propagate their FL of λ > 500 nm with a low propagation loss of 0-3 dB per 100 μm, indicating that the nanofibers function as sub-wavelength scale, low-loss waveguides. Thus, they are promising building blocks for miniaturized optoelectronic circuits.

Optical microring resonators constructed from organic dye nanofibers and their application to miniaturized channel drop/add filters

We fabricated micrometer-scale optical ring resonators by micromanipulation of thiacyanine (TC) dye nanofibers that propagate exciton polaritons (EPs) along the fiber axis. High mechanical flexibility of the nanofibers and a low bending loss property of EP propagation enabled the fabrication of microring resonators with an average radius (r(ave)) as small as 1.6 μm. The performances of the fabricated resonators (r(ave) = 1.6-8.9 μm) were investigated by spatially resolved microscopy techniques. The Q-factors and finesses were evaluated as Q ≈ 300-3500 and F ≈ 2-12. On the basis of the r(ave)-dependence of resonator performances, we revealed the origin of losses in the resonators. To demonstrate the applicability of the microring resonators to photonic devices, we fabricated a channel drop filter that comprises a ring resonator (r(ave) = 3.9 μm) and an I/O bus channel nanofiber. The device exhibited high extinction ratios (4-6 dB) for its micrometer-scale dimensions. Moreover, we successfully fabricated a channel add filter comprising a ring resonator (r(ave) = 4.3 μm) and two I/O bus channel nanofibers. Our results demonstrated a remarkable potential for the application of TC nanofibers to miniaturized photonic circuit devices.

Direct acquisition of interferogram by stage scanning in electron interferometry

We present an electron holography technique to acquire an interferogram, that is, cosine image of phase distribution. The interferogram is constructed by shifting the specimen in one direction with a stage-scanning system and acquiring line intensities of holograms. Taking line intensities eliminates the carrier fringes in the holograms and yields the interferogram. Under phase object approximation, the object phase can be readily obtained from the interferogram without any reconstruction procedure. The spatial resolution of phase is determined independently of the fringe spacing, overcoming the limitation of conventional techniques based on the Fourier transformation method.

Effect of cold rolling on the magnetic susceptibility of Zr-14Nb alloy

The magnetic susceptibility of cold-rolled Zr-14Nb was evaluated to apply a new metallic medical device used for magnetic resonance imaging (MRI). The magnetic susceptibility of cold-rolled Zr-14Nb decreased up to the reduction ratio of 30%, then gradually decreased up to the ratio of 90%. Transmission electron microscopic observation revealed the strain-induced formation of ω phase after cold rolling at the reduction ratio of 5%, indicating that the initial decrease in magnetic susceptibility was caused by the formation of the ω phase. The ω phase was saturated at the reduction ratio of 30%. The formation of the ω phase could be explained on the basis of the increase in the Young's modulus and Vickers hardness of cold-rolled Zr-14Nb. The effect of texture formation on these properties was not obvious in the cold-rolled Zr-14Nb. Because of the strain-induced formation of the ω phase, the magnetic susceptibility of Zr-14Nb can be reduced by cold rolling to as low as that of as-cast Zr-9Nb, which is one-third that of Ti and Ti alloys. Therefore, cold-workable Zr-14Nb with low magnetic susceptibility could be a promising alloy for medical devices under MRI.

Improvement of depth resolution of ADF-SCEM by deconvolution: effects of electron energy loss and chromatic aberration on depth resolution

Scanning confocal electron microscopy (SCEM) is a new imaging technique that is capable of depth sectioning with nanometer-scale depth resolution. However, the depth resolution in the optical axis direction (Z) is worse than might be expected on the basis of the vertical electron probe size calculated with the existence of spherical aberration. To investigate the origin of the degradation, the effects of electron energy loss and chromatic aberration on the depth resolution of annular dark-field SCEM were studied through both experiments and computational simulations. The simulation results obtained by taking these two factors into consideration coincided well with those obtained by experiments, which proved that electron energy loss and chromatic aberration cause blurs at the overfocus sides of the Z-direction intensity profiles rather than degrade the depth resolution much. In addition, a deconvolution method using a simulated point spread function, which combined two Gaussian functions, was adopted to process the XZ-slice images obtained both from experiments and simulations. As a result, the blurs induced by energy loss and chromatic aberration were successfully removed, and there was also about 30% improvement in the depth resolution in deconvoluting the experimental XZ-slice image.

Experimental examination of the characteristics of bright-field scanning confocal electron microscopy images

We experimentally examined the characteristics of bright-field (BF) scanning confocal electron microscopy (SCEM) images by changing the observation conditions and comparing the images with those obtained by BF transmission electron microscopy (TEM) and BF scanning TEM (STEM) modes. The observation of 5-nm-diameter Au nanoparticles demonstrated that BF-SCEM produces object elongation of more than 2000 nm along the optical axis, as do BF-TEM and BF-STEM. We demonstrated the relationship between elongation length and geometric effects such as convergence and collection angles of a probe and the lateral size of an object; the relationship is consistent with previous theoretical prediction. Further, we observed interesting features that are seen only in the BF-SCEM images; the film contrast was strongly enhanced, compared with that of BF-STEM. In addition, a bright contrast appeared around the object position in the elongated images. Using this characteristic, we could determine the object position and structure.

In-situ observation of atomic processes in Xe nanocrystals embedded in al

Self-organization processes in Xe nanocrystals embedded in Al are observed with in-situ high-resolution electron microscopy. Under electron irradiation, stacking fault type defects are produced in Xe nanocrystals. The defects recover in a layer by layer manner. Detailed analysis of the video reveals that the displacement of Xe atoms in the stacking fault was rather small for the Xe atoms at boundary between Xe and Al, suggesting the possibility of the stacking fault in Xe precipitate originating inside of precipitate, not at the Al/Xe interface.

Fraction of a millimeter propagation of exciton polaritons in photoexcited nanofibers of organic dye

We report propagation of exciton polaritons (EPs) in photoexcited nanofibers of thiacyanine dye over a few hundred micrometers at room temperature. We determine the complex refractive index along the nanofibers by fluorescence microscopy measurements on single nanofibers and observe its anomalous behavior due to the EP effect. The longitudinal-transverse splitting energy (ΔE(L-T)) is evaluated to be ∼1  eV. The large ΔE(L-T) and waveguide function of the nanofibers allow a millimeter propagation of EPs at room temperature, which is hardly realized in other systems.

Sub-10 nm crystalline silicon nanostructures by electron beam induced deposition lithography

A novel top-down approach for the controllable fabrication of semiconductor nanostructures exhibiting quantum effects is described. By decomposing metal-rich precursor gas molecules with an electron beam, a sub-10 nm metal pattern can be formed and subsequently transferred to a semiconductor substrate. In such a way monocrystalline silicon nanodots and nanowires are produced as revealed by transmission electron microscopy. It is also shown how through controlled thermal or chemical oxidation the nanostructure surface can be passivated. By providing direct access to the sub-10 nm size range this method possesses promising potential for application in the quantum dot and nanoelectronics fields.

Three-dimensional optical sectioning by scanning confocal electron microscopy with a stage-scanning system

We evaluated the depth resolution of annular dark-field (ADF) scanning confocal electron microscopy (SCEM) with a stage-scanning system by observation of nanoparticles. ADF-SCEM is a three-dimensional (3D) imaging technique that we recently proposed. An ADF-SCEM instrument involves a pinhole aperture before a detector for rejecting electrons from the out-of-focal plane in a specimen and an annular aperture under the specimen for collecting only scattered electrons. The stage-scanning system enables us to directly obtain optical slice images perpendicular and parallel to an optical axis at a desired position. In particular, the parallel slices visualize the elongation of nanoparticles along the optical axis, which depends on the depth resolution. ADF-SCEM effectively reduced the elongation length of the nanoparticles sufficiently to demonstrate depth sectioning, in comparison with scanning transmission electron microscopy and bright-field SCEM. The experimentally obtained length was nearly equal to the theoretically estimated one from the probe size considering the experimental conditions. Furthermore, we applied this ADF-SCEM technique to analysis of the 3D position of catalytic nanoparticles on carbon nanostructures.

Nanoscale energy-filtered scanning confocal electron microscopy using a double-aberration-corrected transmission electron microscope

We demonstrate that a transmission electron microscope fitted with two spherical-aberration correctors can be operated as an energy-filtered scanning confocal electron microscope. A method for establishing this mode is described and initial results showing 3D chemical mapping with nanoscale sensitivity to height and thickness changes in a carbon film are presented. Importantly, uncorrected chromatic aberration does not limit the depth resolution of this technique and moreover performs an energy-filtering role, which is explained in terms of a combined depth and energy-loss response function.

Manifold enhancement of electron beam induced deposition rate at grazing incidence

It is shown how a significant drawback of the electron beam induced deposition technique, namely its low deposition rate, can be circumvented. By tilting a sample, a larger part of the primary electron beam energy becomes dissipated closer to the interface. This in turn increases the emission of secondary electrons, largely responsible for the deposition of the adsorbed molecule components on the surface. An order of magnitude increase in the deposition rate is reported in the fabrication of metal nanowires from organic precursor gas.

A nanosized photodetector fabricated by electron-beam-induced deposition

A sensitive nanosized molybdenum oxide (MoO(x)) photodetector is manufactured at a desired position by electron-beam-induced deposition (EBID). As-deposited MoO(x) had a conductivity approximately 300 S cm(-1). After 2 h annealing at 573 K, the conductivity of nanowires decreased 10 times to approximately 30 S cm(-1) and MoO(x) had photoconductivity. Nanosized MoO(x) wires enhanced the sensitivity of optical devices due to an increased surface area to volume ratio.

Elastic scattering of 200 keV electrons in elemental solids: experimental observation of atomic-number-dependent oscillatory behavior

Mean free path of elastic electron scattering λ(el) has been measured with a 200 keV transmission electron microscope for a wide range of stable elemental solids. An oscillating behavior versus atomic number Z has been revealed, such that, within one row of the periodic table, λ(el) exhibits minimum (maximum) for elements with completed (empty) outer d shells. These λ(el)(Z) oscillations are attributed to Z dependence of the atomic density, and their importance for the interpretation of electron microscope images is demonstrated.

Thickness measurements with electron energy loss spectroscopy

Measurements of thickness using electron energy loss spectroscopy (EELS) are revised. Absolute thickness values can be quickly and accurately determined with the Kramers-Kronig sum method. The EELS data analysis is even much easier with the log-ratio method, however, absolute calibration of this method requires knowledge of the mean free path of inelastic electron scattering lambda. The latter has been measured here in a wide range of solids and a scaling law lambda approximately rho(-0.3) versus mass density rho has been revealed. EELS measurements critically depend on the excitation and collection angles. This dependence has been studied experimentally and theoretically and an efficient model has been formulated.

Development of a stage-scanning system for high-resolution confocal STEM

A stage-scanning system is composed of a specially designed transmission electron microscopy specimen holder equipped with a piezo-driven specimen stage, power supplier and control software. This system enables the specimen to be scanned three-dimensionally, and therefore confocal scanning transmission electron microscopy (STEM) can be performed with a fixed electron-optics configuration. It is demonstrated that stage-scanning confocal STEM images can be obtained with the lateral atomic resolution and the specimen can be moved three-dimensionally with high precision.

High-resolution electron microscopy of detonation nanodiamond

The structure of individual nanodiamond grains produced by the detonation of carbon-based explosives has been studied with a high-vacuum aberration-corrected electron microscope. Many grains show a well-resolved cubic diamond lattice with negligible contamination, thereby demonstrating that the non-diamond shell, universally observed on nanodiamond particles, could be intrinsic to the preparation process rather than to the nanosized diamond itself. The strength of the adhesion between the nanodiamond grains, and the possibility of their patterning with sub-nanometer precision, are also demonstrated.

Sample preparation of GaN-based materials on a sapphire substrate for STEM analysis

In this work, a detailed TEM sample preparation recipe based on a wedge polishing technique for GaN-based materials is presented. The obtained samples have atomically flat surfaces without any obvious surface damages such as the formation of amorphous layers. A composition estimation of Al(x)Ga(1-x)N from Z-contrast STEM imaging is carried out using these samples. The results are in good accord with the nominal composition.

TEM sample preparation using a new nanofabrication technique combining electron-beam-induced deposition and low-energy ion milling

A new TEM sample preparation technique using electron-beam-induced deposition combined with low-energy ion milling was used to fabricate for two different shapes of sample, conical and plate. High-quality HREM images can be obtained from samples prepared by this technique. A desired sample position can be obtained with high accuracy, and the total sample preparation time can be much less than conventional techniques. Because the gas deposition system used can easily be integrated in a conventional SEM, the method can be performed in any laboratory equipped with a SEM and an ion milling machine.

Dynamic Monte Carlo simulation on the electron-beam-induced deposition of carbon, silver, and tungsten supertips

The process of electron-beam-induced deposition (EBID) was simulated with a dynamic Monte Carlo profile simulator, and the growth of carbon, silver, and tungsten supertips was investigated to study the dependence of material composition on the spatial resolution of EBID. Because light atoms have a smaller scattering angle and a longer mean free path, the carbon supertip has the smallest lateral size and the highest aspect ratio of a bottom tip compared to silver and tungsten supertips. Thus the best spatial resolution of EBID can be achieved on materials of low atomic number. The calculation also indicated a significant contribution of primary electrons to the growth of a supertip in EBID, which is consistent with the experimental observations. These results lead to a more comprehensive understanding of EBID, which is a complex interaction process between electrons and solids.

Ultrahigh-vacuum third-order spherical aberration (Cs) corrector for a scanning transmission electron microscope

Initial results from an ultrahigh-vacuum (UHV) third-order spherical aberration (Cs) corrector for a dedicated scanning transmission electron microscopy, installed at the National Institute for Materials Science, Tsukuba, Japan, are presented here. The Cs corrector is of the dual hexapole type. It is UHV compatible and was installed on a UHV column. The Ronchigram obtained showed an extension of the sweet spot area, indicating a successful correction of the third-order spherical aberration Cs. The power spectrum of an image demonstrated that the resolution achieved was 0.1 nm. A first trial of the direct measurement of the fifth-order spherical aberration C5 was also attempted on the basis of a Ronchigram fringe measurement.