Ferromagnetic Insulating Ground-State Resolved in Mixed Protons and Oxygen Vacancies-Doped La0.67Sr0.33CoO3 Thin Films via Ionic Liquid Gating

The realization of ferromagnetic insulating ground state is a critical prerequisite for spintronic applications. By applying electric field-controlled ionic liquid gating (ILG) to stoichiometry La0.67Sr0.33CoO3 thin films, the doping of protons (H+) has been achieved for the first time. Furthermore, a hitherto-unreported ferromagnetic insulating phase with a remarkably high Tc up to 180 K has been observed which can be attributed to the doping of H+ and the formation of oxygen vacancies (VO). The chemical formula of the dual-ion migrated film has been identified as La2/3Sr1/3CoO8/3H2/3 based on combined Co L23-edge absorption spectra and configuration interaction cluster calculations, from which we are able to explain the ferromagnetic ground state in terms of the distinct magnetic moment contributions from Co ions with octahedral (Oh) and tetrahedral (Td) symmetries following antiparallel spin alignments. Further density functional theory calculations have been performed to verify the functionality of H+ as the transfer ion and the origin of the novel ferromagnetic insulating ground state. Our results provide a fundamental understanding of the ILG regulation mechanism and shed light on the manipulating of more functionalities in other correlated compounds through dual-ion manipulation.

Generating active metal/oxide reverse interfaces through coordinated migration of single atoms

Identification of active sites in catalytic materials is important and helps establish approaches to the precise design of catalysts for achieving high reactivity. Generally, active sites of conventional heterogeneous catalysts can be single atom, nanoparticle or a metal/oxide interface. Herein, we report that metal/oxide reverse interfaces can also be active sites which are created from the coordinated migration of metal and oxide atoms. As an example, a Pd1/CeO2 single-atom catalyst prepared via atom trapping, which is otherwise inactive at 30 °C, is able to completely oxidize formaldehyde after steam treatment. The enhanced reactivity is due to the formation of a Ce2O3-Pd nanoparticle domain interface, which is generated by the migration of both Ce and Pd atoms on the atom-trapped Pd1/CeO2 catalyst during steam treatment. We show that the generation of metal oxide-metal interfaces can be achieved in other heterogeneous catalysts due to the coordinated mobility of metal and oxide atoms, demonstrating the formation of a new active interface when using metal single-atom material as catalyst precursor.

Confined Cu-OH single sites in SSZ-13 zeolite for the direct oxidation of methane to methanol

The direct oxidation of methane to methanol (MTM) remains a significant challenge in heterogeneous catalysis due to the high dissociation energy of the C-H bond in methane and the high desorption energy of methanol. In this work, we demonstrate a breakthrough in selective MTM by achieving a high methanol space-time yield of 2678 mmol molCu-1 h-1 with 93% selectivity in a continuous methane-steam reaction at 400 °C. The superior performance is attributed to the confinement effect of 6-membered ring (6MR) voids in SSZ-13 zeolite, which host isolated Cu-OH single sites. Our results provide a deeper understanding of the role of Cu-zeolites in continuous methane-steam to methanol conversion and pave the way for further improvement.

Emergent and robust ferromagnetic-insulating state in highly strained ferroelastic LaCoO3 thin films

Transition metal oxides are promising candidates for the next generation of spintronic devices due to their fascinating properties that can be effectively engineered by strain, defects, and microstructure. An excellent example can be found in ferroelastic LaCoO₃ with paramagnetism in bulk. In contrast, unexpected ferromagnetism is observed in tensile-strained LaCoO₃ films, however, its origin remains controversial. Here we simultaneously reveal the formation of ordered oxygen vacancies and previously unreported long-range suppression of CoO₆ octahedral rotations throughout LaCoO₃ films. Supported by density functional theory calculations, we find that the strong modification of Co 3d-O 2p hybridization associated with the increase of both Co-O-Co bond angle and Co-O bond length weakens the crystal-field splitting and facilitates an ordered high-spin state of Co ions, inducing an emergent ferromagnetic-insulating state. Our work provides unique insights into underlying mechanisms driving the ferromagnetic-insulating state in tensile-strained ferroelastic LaCoO₃ films while suggesting potential applications toward low-power spintronic devices.

Direct observation of the dynamic reconstructed active phase of perovskite LaNiO3 for the oxygen-evolution reaction

Ni-based transition metal oxides are promising oxygen-evolution reaction (OER) catalysts due to their abundance and high activity. Identification and manipulation of the chemical properties of the real active phase on the catalyst surface is crucial to improve the reaction kinetics and efficiency of the OER. Herein, we used electrochemical-scanning tunnelling microscopy (EC-STM) to directly observe structural dynamics during the OER on LaNiO₃ (LNO) epitaxial thin films. Based on comparison of dynamic topographical changes in different compositions of LNO surface termination, we propose that reconstruction of surface morphology originated from transition of Ni species on LNO surface termination during the OER. Furthermore, we showed that the change in surface topography of LNO was induced by Ni(OH)₂/NiOOH redox transformation by quantifying STM images. Our findings demonstrate that in situ characterization for visualization and quantification of thin films is very important for revealing the dynamic nature of the interface of catalysts under electrochemical conditions. This strategy is crucial for in-depth understanding of the intrinsic catalytic mechanism of the OER and rational design of high-efficiency electrocatalysts.

Impact of NiCo2O4/SrTiO3 p-n Heterojunctions on the Interface of Photoelectrochemical Water Oxidation

Forming semiconductor heterojunctions is a promising strategy to boost the efficiency of solar-driven photoelectrochemical (PEC) water splitting by accelerating the separation and transport of photogenerated charge carriers via an interfacial electric field. However, there is limited research considering the influence of electrolytes on the band alignment of the heterojunction under PEC conditions. In this work, we use a single crystal NiCo₂O₄/SrTiO₃ (NCO/STO) heterojunction with atomic-precision controlled thickness as a model photoelectrode to study the band structure modulations upon getting in contact with the electrolyte and the correlation with the PEC activity. It is found that the band alignment can be tuned by the control of p-n heterojunction film thickness and regulated by the water redox potential (E_redox). When the Fermi level (E_F) of the heterojunction is higher/lower than the E_redox, the band bending at the NCO/STO-electrolyte interface will increase/decrease after contacting with the electrolyte. However, when the band bending width of the NCO layer is thinner than its thickness, the electrolyte will not influence the band alignment at the NCO/STO interface. In addition, PEC characterization results show that the 1 nm NCO/STO heterojunction photoanode exhibits superior water-splitting performance, owing to the optimum band structure of the p-n heterojunction and the shorter charge transfer distance.

Free Electron Dynamics and Intrinsic Mobility in Ga2O3 Revealed by Transient Terahertz Conductivity

Here, we investigate the photoconductivity of gallium oxide thin films at different temperatures using time-resolved terahertz spectroscopy. The photogenerated electrons in the conduction band show a monoexponential decay, implying a first-order electron depopulation mechanism. The electron lifetime increases with rising temperature, and this trend coincides with the temperature dependence of the electron mobility rather than diffusion coefficient, suggesting that electron-hole recombination is determined by directional electron drift instead of random diffusion. The electron mobilities extracted from the transient terahertz conductivity are substantially greater than the previously reported Hall mobilities over a wide temperature range, and this is probably because the electron drift in response to the terahertz field is immune from scattering with macroscopic defects. Thus, the mobilities measured here may represent the intrinsic limit of the electron mobility in gallium oxide crystals. Our finding suggests that the current Hall mobility in this wide bandgap semiconductor is still far below the limit, and the long-range electron transport can be further increased by improving the crystalline quality.

Bimolecular Self-Trapped Exciton Formation in Bismuth Vanadate

Bismuth vanadate (BiVO₄) is a promising photoanode material for solar-driven water splitting, and knowledge of the photocarrier dynamics in BiVO₄ could offer guidance to propel the development of the photoanode performance. Herein, we uncovered the nature of various photogenerated transient species in BiVO₄ and extracted their respective dynamics. We found spectral and dynamic evidence that the electrons in the conduction band collapsed into severely localized small electron polarons on a subpicosecond time scale, while the holes in the valence band remained delocalized and accounted for the photoconductivity. In the following tens to hundreds of picoseconds, the electron polaron captured the hole to form a self-trapped exciton via a bimolecular reaction mechanism, and in consequence, the hole was immobilized. Our finding suggests that exciton dissociation strategies should be taken into account in the design of the BiVO₄-based water-splitting applications in order to enhance charge transport and suppress charge recombination.

Ultrafast Anisotropic Evolution of Photoconductivity in Sb2Se3 Single Crystals

The antimony chalcogenide crystals are composed of quasi-one-dimensional [Sb₄X₆]_n ribbons, which lead to strong anisotropic optical and electronic properties. An attempt to exploit photoconductivity anisotropy in the device fabrication may introduce a rewarding strategy to propel the development of the antimony chalcogenide solar cells. To achieve this, understanding of the dynamic evolution of the photoconductivity anisotropy is required. Here, the photoconductivities along different lattice directions in an antimony selenide single crystal are investigated by time-resolved terahertz spectroscopy. We find that electron trapping results in a variation of the photoconductivity anisotropy accompanied by a decrease in the photoconductivity magnitude, while electron-hole recombination only reduces the magnitude but does not affect the anisotropy. Therefore, measuring the temporal evolution of photoconductivity anisotropy can provide a wealth of information regarding the nature of the photocarrier and also render a probe to selectively evaluate the photoconductivity decay mechanisms.

Revealing the Interaction of Charge Carrier-Phonon Coupling by Quantification of Electronic Properties at the SrTiO3/TiO2 Heterointerface

Oxide heterointerfaces with high carrier density can interact strongly with the lattice phonons, generating considerable plasmon-phonon coupling and thereby perturbing the fascinating optical and electronic properties, such as two-dimensional electron gas, ferromagnetism, and superconductivity. Here we use infrared-spectroscopic nanoimaging based on scattering-type scanning near-field optical microscopy (s-SNOM) to quantify the interaction of electron-phonon coupling and the spatial distribution of local charge carriers at the SrTiO₃/TiO₂ interface. We found an increased high-frequency dielectric constant (ε_∞ = 7.1-9.0) and charge carrier density (n = 6.5 × 10¹⁹ to 1.5 × 10²⁰ cm^-3) near the heterointerface. Moreover, quantitative information between the charge carrier density and extension thickness across the heterointerface has been extracted by monochromatic near-field imaging. A direct evaluation of the relationship between the thickness and the interaction of charge carrier-phonon coupling of the heterointerface would provide valuable information for the development of oxide-based electronic devices.

Barrierless Self-Trapping of Photocarriers in Co3O4

The self-trapping of a free carrier in transition-metal oxides can lead to a small polaron, which is responsible for the inadequate performance of the oxide-based optoelectronic applications. Thus, fundamental understanding of the self-trapping mechanism is of key importance for improving the performance of these applications. Herein, the self-trapping in Co₃O₄ epitaxial monocrystalline films is investigated primarily by transient absorption spectroscopy. The spectral evolution corresponding to the ultrafast transition from free carriers to small polarons is identified, which allows us to extract the self-trapping kinetics. The relationship between the self-trapping rate and temperature suggests a lack of thermal activation energy. A barrierless self-trapping mechanism derived from the small polaron framework is then proposed, which can successfully describe the observation that self-trapping rate decreases linearly with increasing temperature. Given that small polarons are ubiquitous in transition-metal oxides, this self-trapping mechanism is potentially a general phenomenon in these materials.

Promoting the Oxygen Evolution Activity of Perovskite Nickelates through Phase Engineering

Perovskite oxides have emerged as promising candidates for the oxygen evolution reaction (OER) electrocatalyst due to their flexible lattice structure, tunable electronic structure, superior stability, and cost-effectiveness. Recent research studies have mostly focused on the traditional methods to tune the OER performance, such as cation/anion doping, A-/B-site ordering, epitaxial strain, oxygen vacancy, and so forth, leading to reasonable yet still limited activity enhancement. Here, we report a novel strategy for promoting the OER activity for perovskite LaNiO₃ by crystal phase engineering, which is realized by breaking long-range chemical bonding through amorphization. We provide the first and direct evidence that perovskite oxides with an amorphous structure can induce the self-adaptive process, which helps enhance the OER performance. This is evidenced by the fact that an amorphous LaNiO₃ film on glassy carbon shows a 9-fold increase in the current density compared to that of an epitaxial LaNiO₃ single crystalline film. The obtained current density of 1038 μΑ cm^-2 (@ 1.6 vs RHE) is the largest value among the literature reported values. Our work thus offers a new protocol to boost the OER performance for perovskite oxides for future clean energy applications.

Wide Bandgap Oxide Semiconductors: from Materials Physics to Optoelectronic Devices

Wide bandgap oxide semiconductors constitute a unique class of materials that combine properties of electrical conductivity and optical transparency. They are being widely used as key materials in optoelectronic device applications, including flat-panel displays, solar cells, OLED, and emerging flexible and transparent electronics. In this article, an up-to-date review on both the fundamental understanding of materials physics of oxide semiconductors, and recent research progress on design of new materials and high-performing thin film transistor (TFT) devices in the context of fundamental understanding is presented. In particular, an in depth overview is first provided on current understanding of the electronic structures, defect and doping chemistry, optical and transport properties of oxide semiconductors, which provide essential guiding principles for new material design and device optimization. With these principles, recent advances in design of p-type oxide semiconductors, new approaches for achieving cost-effective transparent (flexible) electrodes, and the creation of high mobility 2D electron gas (2DEG) at oxide surfaces and interfaces with a wealth of fascinating physical properties of great potential for novel device design are then reviewed. Finally, recent progress and perspective of oxide TFT based on new oxide semiconductors, 2DEG, and low-temperature solution processed oxide semiconductor for flexible electronics will be reviewed.

Unusual Role of Point Defects in Perovskite Nickelate Electrocatalysts

Low-cost transition-metal oxide is regarded as a promising electrocatalyst family for an oxygen evolution reaction (OER). The classic design principle for an oxide electrocatalyst believes that point defect engineering, such as oxygen vacancies (V_O^..) or heteroatom doping, offers the opportunities to manipulate the electronic structure of material toward optimal OER activity. Oppositely, in this work, we discover a counterintuitive phenomenon that both V_O^.. and an aliovalent dopant (i.e., proton (H⁺)) in perovskite nickelate (i.e., NdNiO₃ (NNO)) have a considerably detrimental effect on intrinsic OER performance. Detailed characterizations unveil that the introduction of these point defects leads to a decrease in the oxidative state of Ni and weakens Ni-O orbital hybridization, which triggers the local electron-electron correlation and a more insulating state. Evidenced by first-principles calculation using the density functional theory (DFT) method, the OER on nickelate electrocatalysts follows the lattice oxygen mechanism (LOM). The incorporation of point defect increases the energy barrier of transformation from OO*(V_O) to OH*(V_O) intermediates, which is regarded as the rate-determining step (RDS). This work offers a new and significant perspective of the role that lattice defects play in the OER process.

Recombination of Polaronic Electron-Hole Pairs in Hematite Determined by Nuclear Quantum Tunneling

Here, we investigate the intrinsic nonradiative recombination mechanism in hematite single crystals that decides the photocarrier lifetime under solar illumination. On the basis of the small polaron theory, we propose that the photogenerated electron-hole pair along with its induced lattice deformation in hematite could be treated as a pseudocoordination-complex (PCC) dispersed in a solid medium. We demonstrate that the nonradiative recombination rate at different temperatures determined from the transient absorption spectroscopy can be excellently described by the nonradiative transition theory developed previously for parallels of the PCC model. Our finding suggests that at room temperature the nonradiative recombination in hematite substantially depends on the probability of quantum tunneling of the nuclear configuration.

Optimizing the Electronic Structure of In2O3 through Mg Doping for NiO/In2O3 p-n Heterojunction Diodes

In₂O₃ is a wide bandgap oxide semiconductor, which has the potential to be used as an active material for transparent flexible electronics and UV photodetectors. However, the high concentration of unintentional background electrons existing in In₂O₃ makes it hard to be modulated by the electric field or form p-n heterojunctions with a sufficient band-bending width at the interface. In this work, we report the reduction of the background electrons in In₂O₃ by Mg doping (Mg-In₂O₃) and thereby improve the device performance of p-n diodes based on the NiO/Mg-In₂O₃ heterojunction. In particular, Mg doping compensates the free electrons in In₂O₃ and reduces the electron concentration from 1.7 × 10¹⁹ cm^-3 without doping to 1.8 × 10¹⁷ cm^-3 with 5% Mg doping. Transparent p-n heterojunction diodes were fabricated based on p-type NiO and n-type Mg-In₂O₃. The device performance was considerably enhanced by Mg doping with a high rectification ratio of 3 × 10⁴ and a remarkable high breakdown voltage of >20 V. High-resolution X-ray photoelectron spectroscopy was used to investigate the interfacial electronic structure between NiO and Mg-In₂O₃, revealing a type II band alignment with a valence band offset of 1.35 eV and a conduction band offset of 2.15 eV. A large built-in potential of 0.98 eV was found for the undoped In₂O₃ but decreased to 0.51 eV for 5% Mg doping of In₂O₃. The NiO/Mg-In₂O₃ diodes with an improved rectification ratio and wider depletion region provide the possibility of achieving photodetectors with rapid photoresponse.

Electronic Structure and Interface Energetics of CuBi2O4 Photoelectrodes

CuBi₂O₄ exhibits significant potential for the photoelectrochemical (PEC) conversion of solar energy into chemical fuels, owing to its extended visible-light absorption and positive flat band potential vs the reversible hydrogen electrode. A detailed understanding of the fundamental electronic structure and its correlation with PEC activity is of significant importance to address limiting factors, such as poor charge carrier mobility and stability under PEC conditions. In this study, the electronic structure of CuBi₂O₄ has been studied by a combination of hard X-ray photoemission spectroscopy, resonant photoemission spectroscopy, and X-ray absorption spectroscopy (XAS) and compared with density functional theory (DFT) calculations. The photoemission study indicates that there is a strong Bi 6s-O 2p hybrid electronic state at 2.3 eV below the Fermi level, whereas the valence band maximum (VBM) has a predominant Cu 3d-O 2p hybrid character. XAS at the O K-edge supported by DFT calculations provides a good description of the conduction band, indicating that the conduction band minimum is composed of unoccupied Cu 3d-O 2p states. The combined experimental and theoretical results suggest that the low charge carrier mobility for CuBi₂O₄ derives from an intrinsic charge localization at the VBM. Also, the low-energy visible-light absorption in CuBi₂O₄ may result from a direct but forbidden Cu d-d electronic transition, leading to a low absorption coefficient. Additionally, the ionization potential of CuBi₂O₄ is higher than that of the related binary oxide CuO or that of NiO, which is commonly used as a hole transport/extraction layer in photoelectrodes. This work provides a solid electronic basis for topical materials science approaches to increase the charge transport and improve the photoelectrochemical properties of CuBi₂O₄-based photoelectrodes.

Micro-Heterogeneous Annihilation Dynamics of Self-Trapped Excitons in Hematite Single Crystals

The Auger recombination in bulk semiconductors can quickly depopulate the charge carriers in a nonradiative way, which, fortunately, only has a detrimental impact on optoelectronic device performance under the condition of high carrier density because the restriction arising from concurrent momentum and energy conservation limits the Auger rate. Here, we surprisingly observed enhanced Auger recombination in an α-Fe₂O₃ single crystal, a wide bandgap semiconductor with low carrier mobility. The Auger process was ascribed to the Coulombically coupled self-trapped excitons (STEs), and the relaxation of momentum conservation due to the strong spatial localization of these STEs should account for the enhancement. The STE-density dependent kinetics suggested that the strong polaronic effect could cause a micro-heterogeneous distribution of STEs in a high-quality bulk single crystal, which also gave rise to the micro-heterogeneous annihilation dynamics, and a stochastic recombination model was developed and successfully described the STE annihilation dynamics.

Hot-carrier transfer at photocatalytic silicon/platinum interfaces

Interfacial charge transfer from silicon to heterogeneous catalysts plays a key role in silicon-based photoelectrochemical systems. In general, prior to interfacial charge transfer, carriers that are generated by photons with energies above the bandgap dissipate the excess kinetic energy via hot-carrier cooling, and such energy loss limits the maximum power conversion efficiency. The excess energy of hot-carriers, however, could be utilized through hot-carrier transfer from silicon to the catalysts, but such hot-carrier extraction has not yet been demonstrated. Here, we exploit transient reflection spectroscopy to interrogate charge transfer at the interface between silicon and platinum. Quantitative modeling of the surface carrier kinetics indicates that the velocity of charge transfer from silicon to platinum exceeds 2.6 × 10⁷ cm s^-1, corresponding to an average carrier temperature of extracted carriers of ∼600 K, two times higher than the lattice temperature. The charge transfer velocity can be controllably reduced by inserting silica spacing layers between silicon and platinum.

Interface Engineered Room-Temperature Ferromagnetic Insulating State in Ultrathin Manganite Films

Ultrathin epitaxial films of ferromagnetic insulators (FMIs) with Curie temperatures near room temperature are critically needed for use in dissipationless quantum computation and spintronic devices. However, such materials are extremely rare. Here, a room-temperature FMI is achieved in ultrathin La0.9Ba0.1MnO3 films grown on SrTiO3 substrates via an interface proximity effect. Detailed scanning transmission electron microscopy images clearly demonstrate that MnO6 octahedral rotations in La0.9Ba0.1MnO3 close to the interface are strongly suppressed. As determined from in situ X-ray photoemission spectroscopy, O K-edge X-ray absorption spectroscopy, and density functional theory, the realization of the FMI state arises from a reduction of Mn eg bandwidth caused by the quenched MnO6 octahedral rotations. The emerging FMI state in La0.9Ba0.1MnO3 together with necessary coherent interface achieved with the perovskite substrate gives very high potential for future high performance electronic devices.

An Fe stabilized metallic phase of NiS2 for the highly efficient oxygen evolution reaction

This work reports a fundamental study on the relationship of the electronic structure, catalytic activity and surface reconstruction process of Fe doped NiS₂ (Fe_xNi_1-xS₂) for the oxygen evolution reaction (OER). A combined photoemission and X-ray absorption spectroscopic study reveals that Fe doping introduces more occupied Fe 3d⁶ states at the top of the valence band and thereby induces a metallic phase. Meanwhile, Fe doping also significantly increases the OER activity and results in much better stability with the optimum found for Fe_0.1Ni_0.9S₂. More importantly, we performed detailed characterization to track the evolution of the structure and composition of the catalysts after different cycles of OER testing. Our results further confirmed that the catalysts gradually transform into amorphous (oxy)hydroxides which are the actual active species for the OER. However, a fast phase transformation in NiS₂ is accompanied by a decrease of OER activity, because of the formation of a thick insulating NiOOH layer limiting electron transfer. On the other hand, Fe doping retards the process of transformation, because of a shorter Fe-S bond length (2.259 Å) than Ni-S (2.400 Å), explaining the better electrochemical stability of Fe_0.1Ni_0.9S₂. These results suggest that the formation of a thin surface layer of NiFe (oxy)hydroxide as an active OER catalyst and the remaining Fe_0.1Ni_0.9S₂ as a conductive core for fast electron transfer is the base for the high OER activity of Fe_xNi_1-xS₂. Our work provides important insight and design principle for metal chalcogenides as highly active OER catalysts.

3D strain-induced superconductivity in La2CuO4+δ using a simple vertically aligned nanocomposite approach

A long-term goal for superconductors is to increase the superconducting transition temperature, T _C. In cuprates, T _C depends strongly on the out-of-plane Cu-apical oxygen distance and the in-plane Cu-O distance, but there has been little attention paid to tuning them independently. Here, in simply grown, self-assembled, vertically aligned nanocomposite thin films of La₂CuO_4+δ + LaCuO₃, by strongly increasing out-of-plane distances without reducing in-plane distances (three-dimensional strain engineering), we achieve superconductivity up to 50 K in the vertical interface regions, spaced ~50 nm apart. No additional process to supply excess oxygen, e.g., by ozone or high-pressure oxygen annealing, was required, as is normally the case for plain La₂CuO_4+δ films. Our proof-of-concept work represents an entirely new approach to increasing T _C in cuprates or other superconductors.

In Situ Atmospheric Deposition of Ultrasmooth Nickel Oxide for Efficient Perovskite Solar Cells

Organic-inorganic perovskite solar cells have attracted significant attention due to their remarkable performance. The use of alternative metal-oxide charge-transport layers is a strategy to improving device reliability for large-scale fabrication and long-term applications. Here, we report solution-processed perovskite solar cells employing nickel oxide hole-extraction layers produced in situ using an atmospheric pressure spatial atomic-layer deposition system, which is compatible with high-throughput processing of electronic devices from solution. Our sub-nanometer smooth (average roughness of ≤0.6 nm) oxide films enable the efficient collection of holes and the formation of perovskite absorbers with high electronic quality. Initial solar-cell experiments show a power-conversion efficiency of 17.1%, near-unity ideality factors, and a fill factor of >80% with negligible hysteresis. Transient measurements reveal that a key contributor to this performance is the reduced luminescence quenching trap density in the perovskite/nickel oxide structure.

Creation and Ordering of Oxygen Vacancies at WO3-δ and Perovskite Interfaces

Changes in the structure and composition resulting from oxygen deficiency can strongly impact the physical and chemical properties of transition-metal oxides, which may lead to new functionalities for novel electronic devices. Oxygen vacancies (V_O) can be readily formed to accommodate the lattice mismatch during epitaxial thin film growth. In this paper, the effects of substrate strain and oxidizing power on the creation and distribution of V_O in WO_3-δ thin films are investigated in detail. An ¹⁸O₂ isotope-labeled time-of-flight secondary-ion mass spectrometry study reveals that WO_3-δ films grown on SrTiO₃ substrates display a significantly larger oxygen vacancy gradient along the growth direction compared to those grown on LaAlO₃ substrates. This result is corroborated by scanning transmission electron microscopy imaging, which reveals a large number of defects close to the interface to accommodate interfacial tensile strain, leading to the ordering of V_O and the formation of semi-aligned Magnéli phases. The strain is gradually released and a tetragonal phase with much better crystallinity is observed at the film/vacuum interface. The changes in the structure resulting from oxygen defect creation are shown to have a direct impact on the electronic and optical properties of the films.

A Single-Step Hydrothermal Route to 3D Hierarchical Cu2 O/CuO/rGO Nanosheets as High-Performance Anode of Lithium-Ion Batteries

As anodes of Li-ion batteries, copper oxides (CuO) have a high theoretical specific capacity (674 mA h g^-1 ) but own poor cyclic stability owing to the large volume expansion and low conductivity in charges/discharges. Incorporating reduced graphene oxide (rGO) into CuO anodes with conventional methods fails to build robust interaction between rGO and CuO to efficiently improve the overall anode performance. Here, Cu₂ O/CuO/reduced graphene oxides (Cu₂ O/CuO/rGO) with a 3D hierarchical nanostructure are synthesized with a facile, single-step hydrothermal method. The Cu₂ O/CuO/rGO anode exhibits remarkable cyclic and high-rate performances, and particularly the anode with 25 wt% rGO owns the best performance among all samples, delivering a record capacity of 550 mA h g^-1 at 0.5 C after 100 cycles. The pronounced performances are attributed to the highly efficient charge transfer in CuO nanosheets encapsulated in rGO network and the mitigated volume expansion of the anode owing to its robust 3D hierarchical nanostructure.

Strongly Enhanced Photovoltaic Performance and Defect Physics of Air-Stable Bismuth Oxyiodide (BiOI)

Bismuth-based compounds have recently gained increasing attention as potentially nontoxic and defect-tolerant solar absorbers. However, many of the new materials recently investigated show limited photovoltaic performance. Herein, one such compound is explored in detail through theory and experiment: bismuth oxyiodide (BiOI). BiOI thin films are grown by chemical vapor transport and found to maintain the same tetragonal phase in ambient air for at least 197 d. The computations suggest BiOI to be tolerant to antisite and vacancy defects. All-inorganic solar cells (ITO|NiO_x |BiOI|ZnO|Al) with negligible hysteresis and up to 80% external quantum efficiency under select monochromatic excitation are demonstrated. The short-circuit current densities and power conversion efficiencies under AM 1.5G illumination are nearly double those of previously reported BiOI solar cells, as well as other bismuth halide and chalcohalide photovoltaics recently explored by many groups. Through a detailed loss analysis using optical characterization, photoemission spectroscopy, and device modeling, direction for future improvements in efficiency is provided. This work demonstrates that BiOI, previously considered to be a poor photocatalyst, is promising for photovoltaics.

Electronic Structure and Band Alignment at the NiO and SrTiO3 p-n Heterojunctions

Understanding the energetics at the interface, including the alignment of valence and conduction bands, built-in potentials, and ionic and electronic reconstructions, is an important challenge in designing oxide interfaces that have controllable multifunctionalities for novel (opto-)electronic devices. In this work, we report detailed investigations on the heterointerface of wide-band-gap p-type NiO and n-type SrTiO₃ (STO). We show that despite a large lattice mismatch (∼7%) and dissimilar crystal structure, high-quality NiO and Li-doped NiO (LNO) thin films can be epitaxially grown on STO(001) substrates through a domain-matching epitaxy mechanism. X-ray photoelectron spectroscopy studies indicate that NiO/STO heterojunctions form a type II "staggered" band alignment. In addition, a large built-in potential of up to 0.97 eV was observed at the interface of LNO and Nb-doped STO (NbSTO). The LNO/NbSTO p-n heterojunctions exhibit not only a large rectification ratio of 2 × 10³ but also a large ideality factor of 4.3. The NiO/STO p-n heterojunctions have important implications for applications in photocatalysis and photodetectors as the interface provides favorable energetics for facile separation and transport of photogenerated electrons and holes.

P-type transparent conducting oxides

Transparent conducting oxides constitute a unique class of materials combining properties of electrical conductivity and optical transparency in a single material. They are needed for a wide range of applications including solar cells, flat panel displays, touch screens, light emitting diodes and transparent electronics. Most of the commercially available TCOs are n-type, such as Sn doped In2O3, Al doped ZnO, and F doped SnO2. However, the development of efficient p-type TCOs remains an outstanding challenge. This challenge is thought to be due to the localized nature of the O 2p derived valence band which leads to difficulty in introducing shallow acceptors and large hole effective masses. In 1997 Hosono and co-workers (1997 Nature 389 939) proposed the concept of 'chemical modulation of the valence band' to mitigate this problem using hybridization of O 2p orbitals with close-shell Cu 3d (10) orbitals. This work has sparked tremendous interest in designing p-TCO materials together with deep understanding the underlying materials physics. In this article, we will provide a comprehensive review on traditional and recently emergent p-TCOs, including Cu(+)-based delafossites, layered oxychalcogenides, nd (6) spinel oxides, Cr(3+)-based oxides (3d (3)) and post-transition metal oxides with lone pair state (ns (2)). We will focus our discussions on the basic materials physics of these materials in terms of electronic structures, doping and defect properties for p-type conductivity and optical properties. Device applications based on p-TCOs for transparent p-n junctions will also be briefly discussed.

Size- and dimensionality-dependent optical, magnetic and magneto-optical properties of binary europium-based nanocrystals: EuX (X = O, S, Se, Te)

Europium chalcogenides (EuX, X = O, S, Se, Te), a class of prototypical Heisenberg magnetic semiconductors, exhibit intriguing properties in optics, magnetism, and magneto-optics at the nanoscale, and have broad application potential in optical/magnetic sensors, spintronics, optical isolators, etc. EuX nanocrystals (NCs) exhibit enhanced properties, such as high saturation magnetization, a strong magneto-optic effect (Faraday rotation), and high magneto resistance, which are all unanimously dependent on the NC's size, shape, and surface information. In this report, we give an overview of the fundamental properties of bulk EuX, and illustrate the quantum confinement effects on the optical, magnetic and magneto-optical properties of EuX nanostructures. We then focus on doping and self-assembly-two efficient methods that enhance magnetic properties by manipulating magnetic coupling in EuX nanostructures. In particular, we look towards future research on Eu(2+) NCs, which along with the overview provides an up-to-date platform for evaluating the fundamental properties and application potential of Eu-based semiconductors.

Perovskite Sr-Doped LaCrO3 as a New p-Type Transparent Conducting Oxide

Epitaxial La1-x Srx CrO3 deposited on SrTiO3 (001) is shown to be a p-type transparent conducting oxide with competitive figures of merit and a cubic perovskite structure, facilitating integration into oxide electronics. Holes in the Cr 3d t2g bands play a critical role in enhancing p-type conductivity, while transparency to visible light is maintained because low-lying d-d transitions arising from hole doping are dipole forbidden.

Argon Cluster Sputtering Source for ToF-SIMS Depth Profiling of Insulating Materials: High Sputter Rate and Accurate Interfacial Information

The use of an argon cluster ion sputtering source has been demonstrated to perform superiorly relative to traditional oxygen and cesium ion sputtering sources for ToF-SIMS depth profiling of insulating materials. The superior performance has been attributed to effective alleviation of surface charging. A simulated nuclear waste glass (SON68) and layered hole-perovskite oxide thin films were selected as model systems because of their fundamental and practical significance. Our results show that high sputter rates and accurate interfacial information can be achieved simultaneously for argon cluster sputtering, whereas this is not the case for cesium and oxygen sputtering. Therefore, the implementation of an argon cluster sputtering source can significantly improve the analysis efficiency of insulating materials and, thus, can expand its applications to the study of glass corrosion, perovskite oxide thin film characterization, and many other systems of interest.

Electronic and magnetic properties of epitaxial perovskite SrCrO₃(0 0 1)

We have investigated the intrinsic properties of SrCrO3 epitaxial thin films synthesized by molecular beam epitaxy. We find compelling evidence that SrCrO3 is a correlated metal. X-ray photoemission valence band and O K-edge x-ray absorption spectra indicate a strongly hybridized Cr3d-O2p state crossing the Fermi level, leading to metallic behavior. Comparison between valence band spectra near the Fermi level and the densities of states calculated using density functional theory (DFT) suggests the presence of coherent and incoherent states and points to strong electron correlation effects. The magnetic susceptibility can be described by Pauli paramagnetism at temperatures above 100 K, but reveals antiferromagnetic behavior at lower temperatures, possibly resulting from orbital ordering.

Initial-stage oriented-attachment one-dimensional assembly of nanocrystals: fundamental insight with a collision–recrystallization model

Inter-particle interactions at the initial oriented attachment growth of nanorods are investigated analytically based on a collision–recrystallization model.

Strain and tilt during epitaxial growth of highly ordered In2O3 nanorods

Precise control over the morphology of one-dimensional (1D) nanostructures is an essential step in the effort to develop nano-devices with exotic properties. Here we demonstrate the formation of highly aligned In2O3 nanorod arrays on Y-stabilised ZrO2(110) grown by oxygen plasma assisted molecular beam epitaxy. The evolution of morphologies, strain and tilt in the In2O3 nanorods are studied by atomic force microscopy and high resolution synchrotron-based X-ray diffraction. It is shown that the preferential 1D growth is driven by minimization of the total surface and interface energies. The mismatch of ca. 1.7% between the substrate and the epilayer is accommodated by strain along the [110] direction coupled with tilting of the rods along [001] and [001] directions and contraction in the [110] direction. The present highly ordered In2O3 nanorod arrays supported on an insulating substrate are of potential interest for large-scale fabrication of nano-devices.

Microscopic origin of electron accumulation in In2O3

Angle-resolved photoemission spectroscopy reveals the presence of a two-dimensional electron gas at the surface of In(2)O(3)(111). Quantized subband states arise within a confining potential well associated with surface electron accumulation. Coupled Poisson-Schrödinger calculations suggest that downward band bending for the conduction band must be much bigger than band bending in the valence band. Surface oxygen vacancies acting as doubly ionized shallow donors are shown to provide the free electrons within this accumulation layer. Identification of the origin of electron accumulation in transparent conducting oxides has significant implications in the realization of devices based on these compounds.

The evolution of the electronic structure at the Bi/Ag(111) interface studied using photoemission spectroscopy

The growth of Bi on Ag(111) induces different surface structures, including (√3 × √3)R30° surface alloy, Bi-(p × √3) overlayer and Bi(110) thin film, as a function of increasing Bi coverage. Here we report the study of electronic states of these structures using core level and valence band photoemission spectroscopy at room temperature. The sp-derived Shockley surface state on Ag(111) is rapidly quenched upon deposition of Bi, due to the strong variation of the in-plane surface potential in the Ag(2)Bi surface alloy. The Bi 4f core levels of the (√3 × √3)R30° alloy and Bi(110) thin film are shifted to lower binding energy by ~0.6 eV and ~0.3 eV compared with the Bi bulk value, respectively. Mechanisms inducing the core level shifts are discussed as due to a complex superposition of several factors. As Bi coverage increases and a Bi(110) overlayer forms on Ag(111), a new state is observed at ~0.9 ML arising from electronic states localized at the Ag-Bi interface. Finally the change of work function as a function of coverage is discussed on the basis of a charge transfer model.

The evaluation of Coulombic interaction in the oriented-attachment growth of colloidal nanorods

An analytical expression of Coulomb interaction between a sphere and a cylindrical rod was derived. Along with a recently reported van der Waals interaction expression, the derived Coulomb interaction expression, for the first time, allows one to quantitatively evaluate the activation energy in the oriented attachment growth of colloidal nanorods.

Size-dependent shape and tilt transitions in In2O3 nanoislands grown on cubic Y-stabilized ZrO2(001) by molecular beam epitaxy

The growth of In(2)O(3) on cubic Y-stabilized ZrO(2)(001) by molecular beam epitaxy leads to formation of nanoscale islands which may tilt relative to the substrate in order to help accommodate the 1.7% tensile mismatch between the epilayer and the substrate. High-resolution synchrotron-based X-ray diffraction has been used in combination with atomic force microscopy to probe the evolution in island morphology, orientation, and tilt with island size. Very small islands formed at low substrate coverage are highly strained but exhibit no tilt, while intermediate islands are tilted randomly in all directions, giving rise to distinctive doughnut-shaped structure in three-dimensional reciprocal space isosurfaces. The largest islands with lateral sizes on the order of 1 μm tilt away from the four equivalent in-plane <110> directions, giving three-dimensional scattering isosurfaces dominated by structure at the four corners of a square. Spatially resolved reciprocal space mapping using an X-ray beam with dimensions on the order of 1 μm suggests that the four-fold symmetry observed using a larger beam arises from averaging over an ensemble of islands, each with an individual tilt down one direction, rather than from the coexistence of differently tilted domains within a given island.

Thickness dependence of the strain, band gap and transport properties of epitaxial In2O3 thin films grown on Y-stabilised ZrO2(111)

Epitaxial films of In(2)O(3) have been grown on Y-stabilised ZrO(2)(111) substrates by molecular beam epitaxy over a range of thicknesses between 35 and 420 nm. The thinnest films are strained, but display a 'cross-hatch' morphology associated with a network of misfit dislocations which allow partial accommodation of the lattice mismatch. With increasing thickness a 'dewetting' process occurs and the films break up into micron sized mesas, which coalesce into continuous films at the highest coverages. The changes in morphology are accompanied by a progressive release of strain and an increase in carrier mobility to a maximum value of 73 cm(2) V(-1) s(-1). The optical band gap in strained ultrathin films is found to be smaller than for thicker films. Modelling of the system, using a combination of classical pair-wise potentials and ab initio density functional theory, provides a microscopic description of the elastic contributions to the strained epitaxial growth, as well as the electronic effects that give rise to the observed band gap changes. The band gap increase induced by the uniaxial compression is offset by the band gap reduction associated with the epitaxial tensile strain.

LEED I-V and DFT structure determination of the (√3 × √3)R30° Pb-Ag(111) surface alloy

The deposition of 1/3 of a monolayer of Pb on Ag(111) leads to the formation of PbAg(2) surface alloy with a long range ordered (√3 × √3)R30° superstructure. A detailed analysis of this structure using low-energy electron diffraction (LEED) I-V measurements together with density functional theory (DFT) calculations is presented. We find strong correlation between experimental and calculated LEED I-V data, with the fit between the two data sets having a Pendry's reliability factor of 0.21. The Pb atom is found to replace one top layer Ag atom in each unit cell, forming a substitutional PbAg(2) surface alloy, as expected, with the Pb atoms residing approximately 0.4 Å above the Ag atoms due to their size difference. DFT calculations are in good agreement with the LEED results.

Surface energies control the self-organization of oriented In2O3 nanostructures on cubic zirconia

Highly aligned one-dimensional (1D) nanorods of the transparent conducting oxide In(2)O(3) have been grown on (110)-oriented Y-stabilized ZrO(2) substrates, whereas growth on (100) and (111) substrates leads respectively to blocklike 3D islands and continuous films. It is shown that the striking influence of substrate orientation on the growth morphology is controlled by differences in energies between the low index surfaces of In(2)O(3) and that spontaneous self-organization is driven by minimization of surface energies.