Growth of Au-Pd2Sn Nanorods via Galvanic Replacement and Their Catalytic Performance on Hydrogenation and Sonogashira Coupling Reactions

Colloidal Pd₂Sn and Au-Pd₂Sn nanorods (NRs) with tuned size were produced by the reduction of Pd and Sn salts in the presence of size- and shape-controlling agents and the posterior growth of Au tips through a galvanic replacement reaction. Pd₂Sn and Au-Pd₂Sn NRs exhibited high catalytic activity toward quasi-homogeneous hydrogenation of alkenes (styrene and 1-octene) and alkynes (phenylacetylene and 1-octyne) in dichloromethane. Au-Pd₂Sn NRs showed higher activity than Pd₂Sn for 1-octene, 1-octyne, and phenylacetylene. In Au-Pd₂Sn heterostructures, X-ray photoelectron spectroscopy evidenced an electron donation from the Pd₂Sn NR to the Au tips. Such heterostructures showed distinct catalytic behavior in the hydrogenation of compounds containing a triple bond such as tolan. This can be explained by the aurophilicity of triple bonds. To further study this effect, Pd₂Sn and Au-Pd₂Sn NRs were also tested in the Sonogashira coupling reaction between iodobenzene and phenylacetylene in N, N-dimethylformamide. At low concentration, this reaction provided the expected product, tolan. However, at high concentration, more reduced products such as stilbene and 1,2-diphenylethane were also obtained, even without the addition of H₂. A mechanism for this unexpected reduction is proposed.

Orientationally Ordered Silicon Nanocrystal Cuboctahedra in Superlattices

Uniform silicon nanocrystals were synthesized with cuboctahedral shape and passivated with 1-dodecene capping ligands. Transmission electron microscopy, electron diffraction, and grazing incidence wide-angle and small-angle X-ray scattering show that these soft cuboctahedra assemble into face-centered cubic superlattices with orientational order. The preferred nanocrystal orientation was found to depend on the orientation of the superlattices on the substrate, indicating that the interactions with the substrate and assembly kinetics can influence the orientation of faceted nanocrystals in superlattices.

Fe3O4@NiFexOy Nanoparticles with Enhanced Electrocatalytic Properties for Oxygen Evolution in Carbonate Electrolyte

The design and engineering of earth-abundant catalysts that are both cost-effective and highly active for water splitting are crucial challenges in a number of energy conversion and storage technologies. In this direction, herein we report the synthesis of Fe₃O₄@NiFe_xO_y core-shell nanoheterostructures and the characterization of their electrocatalytic performance toward the oxygen evolution reaction (OER). Such nanoparticles (NPs) were produced by a two-step synthesis procedure involving the colloidal synthesis of Fe₃O₄ nanocubes with a defective shell and the posterior diffusion of nickel cations within this defective shell. Fe₃O₄@NiFe_xO_y NPs were subsequently spin-coated over ITO-covered glass and their electrocatalytic activity toward water oxidation in carbonate electrolyte was characterized. Fe₃O₄@NiFe_xO_y catalysts reached current densities above 1 mA/cm² with a 410 mV overpotential and Tafel slopes of 48 mV/dec, which is among the best electrocatalytic performances reported in carbonate electrolyte.

Mn3O4@CoMn2O4-CoxOy Nanoparticles: Partial Cation Exchange Synthesis and Electrocatalytic Properties toward the Oxygen Reduction and Evolution Reactions

Mn3O4@CoMn2O4 nanoparticles (NPs) were produced at low temperature and ambient atmosphere using a one-pot two-step synthesis protocol involving the cation exchange of Mn by Co in preformed Mn3O4 NPs. Selecting the proper cobalt precursor, the nucleation of CoxOy crystallites at the Mn3O4@CoMn2O4 surface could be simultaneously promoted to form Mn3O4@CoMn2O4-CoxOy NPs. Such heterostructured NPs were investigated for oxygen reduction and evolution reactions (ORR, OER) in alkaline solution. Mn3O4@CoMn2O4-CoxOy NPs with [Co]/[Mn] = 1 showed low overpotentials of 0.31 V at -3 mA·cm(-2) and a small Tafel slope of 52 mV·dec(-1) for ORR, and overpotentials of 0.31 V at 10 mA·cm(-2) and a Tafel slope of 81 mV·dec(-1) for OER, thus outperforming commercial Pt-, IrO2-based and previously reported transition metal oxides. This cation-exchange-based synthesis protocol opens up a new approach to design novel heterostructured NPs as efficient nonprecious metal bifunctional oxygen catalysts.

High Yield of GaAs Nanowire Arrays on Si Mediated by the Pinning and Contact Angle of Ga

GaAs nanowire arrays on silicon offer great perspectives in the optoelectronics and solar cell industry. To fulfill this potential, gold-free growth in predetermined positions should be achieved. Ga-assisted growth of GaAs nanowires in the form of array has been shown to be challenging and difficult to reproduce. In this work, we provide some of the key elements for obtaining a high yield of GaAs nanowires on patterned Si in a reproducible way: contact angle and pinning of the Ga droplet inside the apertures achieved by the modification of the surface properties of the nanoscale areas exposed to growth. As an example, an amorphous silicon layer between the crystalline substrate and the oxide mask results in a contact angle around 90°, leading to a high yield of vertical nanowires. Another example for tuning the contact angle is anticipated, native oxide with controlled thickness. This work opens new perspectives for the rational and reproducible growth of GaAs nanowire arrays on silicon.

Role of silicon nanowire diameter for alkyl (chain lengths C₁-C₁₈) passivation efficiency through Si-C bonds

The effect of silicon nanowire (Si NW) diameter on the functionalization efficiency as given by covalent Si-C bond formation is studied for two distinct examples of 25 ± 5 and 50 ± 5 nm diameters (Si NW25 and Si NW50, respectively). A two-step chlorination/alkylation process is used to connect alkyl chains of various lengths (C1-C18) to thinner and thicker Si NWs. The shorter the alkyl chain lengths, the larger the surface coverage of the two studied Si NWs. Increasing the alkyl chain length (C2-C9) changes the coverage on the NWs: while for Si NW25 90 ± 10% of all surface sites are covered with Si-C bonds, only 50 ± 10% of all surface sites are covered with Si-C bonds for the Si NW50 wires. Increasing the chain length further to C14-C18 decreases the alkyl coverage to 36 ± 6% in thin Si NW25 and to 20 ± 5% in thick Si NW50. These findings can be interpreted as being a result of increased steric hindrance of Si-C bond formation for longer chain lengths and higher surface energy for the thinner Si NWs. As a direct consequence of these findings, Si NW surfaces have different stabilities against oxidation: they are more stable at higher Si-C bond coverage, and the surface stability was found to be dependent on the Si-C binding energy itself. The Si-C binding energy differs according to (C1-9)-Si NW > (C14-18)-Si NW, i.e., the shorter the alkyl chain, the greater the Si-C binding energy. However, the oxidation resistance of the (C2-18)-Si NW25 is lower than for equivalent Si NW50 surfaces as explained and experimentally substantiated based on electronic (XPS and KP) and structure (TEM and HAADF) measurements.

Whispering gallery mode lasing from hexagonal shaped layered lead iodide crystals

We report on the synthesis and optical gain properties of regularly shaped lead iodide (PbI2) platelets with thickness ranging from 10-500 nm synthesized by chemical vapor deposition methods. The as-prepared single crystalline platelets exhibit a near band edge emission of ∼ 500 nm. Whispering gallery mode (WGM) lasing from individual hexagonal shaped PbI2 platelets is demonstrated in the temperature-range of 77-210 K, where the lasing modes are supported by platelets as thin as 45 nm. The finite-difference time-domain simulation and the edge-length dependent threshold confirm the planar WGM lasing mechanism in such hexagonal shaped PbI2 platelet. Through a comprehensive study of power-dependent photoluminescence (PL) and time-resolved PL spectroscopy, we ascribe the WGM lasing to be biexcitonic in nature. Moreover, for different thicknesses of platelet, the lowest lasing threshold occurs in platelets of ∼ 120 nm, which attributes to the formation of a good Fabry-Pérot resonance cavity in the vertical direction between the top and bottom platelet surfaces that enhances the reflection. Our present study demonstrates the feasibility of planar light sources based on layered semiconductor materials and that their thickness-dependent threshold characteristic is beneficial for the optimization of layered material based optoelectronic devices.

Probing the internal electric field in GaN/AlGaN nanowire heterostructures

We demonstrate the direct analysis of polarization-induced internal electric fields in single GaN/Al0.3Ga0.7N nanodiscs embedded in GaN/AlN nanowire heterostructures. Superposition of an external electric field with different polarity results in compensation or enhancement of the quantum-confined Stark effect in the nanodiscs. By field-dependent analysis of the low temperature photoluminescence energy and intensity, we prove the [0001̅]-polarity of the nanowires and determine the internal electric field strength to 1.5 MV/cm.

Polarity assignment in ZnTe, GaAs, ZnO, and GaN-AlN nanowires from direct dumbbell analysis

Aberration corrected scanning transmission electron microscopy (STEM) with high angle annular dark field (HAADF) imaging and the newly developed annular bright field (ABF) imaging are used to define a new guideline for the polarity determination of semiconductor nanowires (NWs) from binary compounds in two extreme cases: (i) when the dumbbell is formed with atoms of similar mass (GaAs) and (ii) in the case where one of the atoms is extremely light (N or O: ZnO and GaN/AlN). The theoretical fundaments of these procedures allow us to overcome the main challenge in the identification of dumbbell polarity. It resides in the separation and identification of the constituent atoms in the dumbbells. The proposed experimental via opens new routes for the fine characterization of nanostructures, e.g., in electronic and optoelectronic fields, where the polarity is crucial for the understanding of their physical properties (optical and electronic) as well as their growth mechanisms.