1
|
Michael JR, Perry DL, Cummings DP, Walraven JA, Jordan MB. Focused Ion Beam Preparation of Low Melting Point Metals: Lessons Learned From Indium. Microsc Microanal 2022; 28:1-8. [PMID: 35315316 DOI: 10.1017/s1431927622000496] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/14/2023]
Abstract
Indium (In) and other low melting point metals are used as interconnects in a variety of hybridized circuits and a full understanding of the metallurgy of these interconnects is important to the reliability and performance of the devices. This paper shows that room temperature focused ion beam (FIB) preparation of cross-sections, using Ga+ or Xe+ can result in artifacts that obscure the true In microbump structure. The use of modified milling strategies to minimize the increased local sample temperature are shown to produce cross-sections that are representative of the In bump microstructure in some sample configurations. Furthermore, cooling of the sample to cryogenic temperatures is shown to reliably eliminate artifacts in FIB prepared cross-sections of In bumps allowing the true bump microstructure to be observed.
Collapse
Affiliation(s)
- Joseph R Michael
- Material, Physical, and Chemical Sciences Center, Sandia National Laboratory, PO Box 5800, Albuquerque, NM87185-0886, USA
| | - Daniel L Perry
- Material, Physical, and Chemical Sciences Center, Sandia National Laboratory, PO Box 5800, Albuquerque, NM87185-0886, USA
| | - Damion P Cummings
- Material, Physical, and Chemical Sciences Center, Sandia National Laboratory, PO Box 5800, Albuquerque, NM87185-0886, USA
| | - Jeremy A Walraven
- MESA: Microsystem Engineering, Science, and Applications, Sandia National Laboratory, PO Box 5800, Albuquerque, NM87185-1072, USA
| | - Matthew B Jordan
- MESA: Microsystem Engineering, Science, and Applications, Sandia National Laboratory, PO Box 5800, Albuquerque, NM87185-1084, USA
| |
Collapse
|
2
|
Ayari T, Bishop C, Jordan MB, Sundaram S, Li X, Alam S, ElGmili Y, Patriarche G, Voss PL, Salvestrini JP, Ougazzaden A. Gas sensors boosted by two-dimensional h-BN enabled transfer on thin substrate foils: towards wearable and portable applications. Sci Rep 2017; 7:15212. [PMID: 29123115 PMCID: PMC5680310 DOI: 10.1038/s41598-017-15065-6] [Citation(s) in RCA: 43] [Impact Index Per Article: 6.1] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 07/05/2017] [Accepted: 09/27/2017] [Indexed: 11/17/2022] Open
Abstract
The transfer of GaN based gas sensors to foreign substrates provides a pathway to enhance sensor performance, lower the cost and extend the applications to wearable, mobile or disposable systems. The main keys to unlocking this pathway is to grow and fabricate the sensors on large h-BN surface and to transfer them to the flexible substrate without any degradation of the performances. In this work, we develop a new generation of AlGaN/GaN gas sensors with boosted performances on a low cost flexible substrate. We fabricate 2-inch wafer scale AlGaN/GaN gas sensors on sacrificial two-dimensional (2D) nano-layered h-BN without any delamination or cracks and subsequently transfer sensors to an acrylic surface on metallic foil. This technique results in a modification of relevant device properties, leading to a doubling of the sensitivity to NO2 gas and a response time that is more than 6 times faster than before transfer. This new approach for GaN-based sensor design opens new avenues for sensor improvement via transfer to more suitable substrates, and is promising for next-generation wearable and portable opto-electronic devices.
Collapse
Affiliation(s)
- Taha Ayari
- CNRS, UMI 2958, GT - CNRS, 2 rue Marconi, 57070, Metz, France.,Georgia Institute of Technology, School of Electrical and Computer Engineering, GT-Lorraine, 57070, Metz, France
| | | | - Matthew B Jordan
- CNRS, UMI 2958, GT - CNRS, 2 rue Marconi, 57070, Metz, France.,Georgia Institute of Technology, School of Electrical and Computer Engineering, GT-Lorraine, 57070, Metz, France
| | - Suresh Sundaram
- GT Lorraine, UMI 2958, GT - CNRS, 2 rue Marconi, 57070, Metz, France
| | - Xin Li
- CNRS, UMI 2958, GT - CNRS, 2 rue Marconi, 57070, Metz, France
| | - Saiful Alam
- CNRS, UMI 2958, GT - CNRS, 2 rue Marconi, 57070, Metz, France.,Georgia Institute of Technology, School of Electrical and Computer Engineering, GT-Lorraine, 57070, Metz, France
| | - Youssef ElGmili
- CNRS, UMI 2958, GT - CNRS, 2 rue Marconi, 57070, Metz, France
| | - Gilles Patriarche
- Centre de Nanosciences et de Nanotechnologies, CNRS, Univ. Paris-Sud, Université Paris-Saclay, C2N - Marcoussis, 91460, Marcoussis, France
| | - Paul L Voss
- CNRS, UMI 2958, GT - CNRS, 2 rue Marconi, 57070, Metz, France.,Georgia Institute of Technology, School of Electrical and Computer Engineering, GT-Lorraine, 57070, Metz, France
| | - Jean Paul Salvestrini
- CNRS, UMI 2958, GT - CNRS, 2 rue Marconi, 57070, Metz, France.,Georgia Institute of Technology, School of Electrical and Computer Engineering, GT-Lorraine, 57070, Metz, France
| | - Abdallah Ougazzaden
- CNRS, UMI 2958, GT - CNRS, 2 rue Marconi, 57070, Metz, France. .,Georgia Institute of Technology, School of Electrical and Computer Engineering, GT-Lorraine, 57070, Metz, France.
| |
Collapse
|
3
|
Puybaret R, Rogers DJ, Gmili YE, Sundaram S, Jordan MB, Li X, Patriarche G, Teherani FH, Sandana EV, Bove P, Voss PL, McClintock R, Razeghi M, Ferguson I, Salvestrini JP, Ougazzaden A. Nanoselective area growth of defect-free thick indium-rich InGaN nanostructures on sacrificial ZnO templates. Nanotechnology 2017; 28:195304. [PMID: 28358724 DOI: 10.1088/1361-6528/aa6a43] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/07/2023]
Abstract
Nanoselective area growth (NSAG) by metal organic vapor phase epitaxy of high-quality InGaN nanopyramids on GaN-coated ZnO/c-sapphire is reported. Nanopyramids grown on epitaxial low-temperature GaN-on-ZnO are uniform and appear to be single crystalline, as well as free of dislocations and V-pits. They are also indium-rich (with homogeneous 22% indium incorporation) and relatively thick (100 nm). These properties make them comparable to nanostructures grown on GaN and AlN/Si templates, in terms of crystallinity, quality, morphology, chemical composition and thickness. Moreover, the ability to selectively etch away the ZnO allows for the potential lift-off and transfer of the InGaN/GaN nanopyramids onto alternative substrates, e.g. cheaper and/or flexible. This technology offers an attractive alternative to NSAG on AlN/Si as a platform for the fabrication of high quality, thick and indium-rich InGaN monocrystals suitable for cheap, flexible and tunable light-emitting diodes.
Collapse
Affiliation(s)
- Renaud Puybaret
- Georgia Institute of Technology, School of Electrical and Computer Engineering, Atlanta, GA 30332, United States of America. CNRS, GT UMI 2958, Georgia Tech Lorraine, 2 Rue Marconi, F-57070 Metz, France
| | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | |
Collapse
|
5
|
Frizzell RT, Fichtel FM, Jordan MB, Weprin BE, Borchers DJ, Allen EC, Pogue WR, Batjer HH. Effects of etomidate and hypothermia on cerebral metabolism and blood flow in a canine model of hypoperfusion. J Neurosurg Anesthesiol 1993; 5:104-10. [PMID: 8490307 DOI: 10.1097/00008506-199304000-00006] [Citation(s) in RCA: 10] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [MESH Headings] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 01/31/2023]
Abstract
Etomidate is a nonbarbiturate hypnotic agent which, like the barbiturates, decreases the cerebral metabolic rate of oxygen consumption (CMRO2) 35-50%. The present studies assessed whether etomidate decreased CMRO2 through temperature-dependent mechanisms and whether the combination of etomidate and moderate hypothermia (28 degrees C) decreased CMRO2 more than hypothermia alone. Nineteen anesthetized dogs were treated with saline, etomidate (burst-suppressive doses), etomidate with hypothermia, or hypothermia alone. Etomidate did not affect (p > 0.05) the mean arterial pressure (MAP, mm Hg) but modestly lowered the heart rate [HR; 124 +/- 6 to 105 +/- 14, (mean +/- SEM); p < 0.05] whereas hypothermia (without or with etomidate) lowered (p < 0.05) both MAP (141 +/- 4 to 116 +/- 5 and 135 +/- 6 to 81 +/- 7) and HR (135 +/- 14 to 84 +/- 3 and 135 +/- 10 to 69 +/- 5, respectively). Etomidate administration did not result in a change (p > 0.05) in the esophageal, brain parenchymal, or subdural temperature. CMRO2 (ml/100 g/min) decreased (p < 0.05) during etomidate administration (3.2 +/- 0.4 to 1.7 +/- 0.2) and hypothermia (3.5 +/- 0.2 to 1.1 +/- 0.2), but the addition of etomidate to hypothermia did not further reduce CMRO2 in the animals (3.1 +/- 0.5 to 1.3 +/- 0.2) despite decreasing their brain hemispheric electrical activity from 9 +/- 1 Hz to a burst-suppressive state.(ABSTRACT TRUNCATED AT 250 WORDS)
Collapse
Affiliation(s)
- R T Frizzell
- Department of Neurological Surgery, University of Texas Southwestern Medical Center, Dallas 75235-8855
| | | | | | | | | | | | | | | |
Collapse
|
6
|
Lindsay DC, Smith MC, McQuillan PJ, Jordan MB. Laryngeal compression and stridor as the presenting feature of ruptured thoracic aortic aneurysm. Report of two cases. J Cardiovasc Surg (Torino) 1989; 30:864-6. [PMID: 2808511] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [MESH Headings] [Subscribe] [Scholar Register] [Indexed: 01/02/2023]
Abstract
Two patients are reported in whom rupture of a thoracic aortic aneurysm presented with neck swelling and progressive stridor. Stridor occurred due to compression of the larynx by haematoma tracking up from the mediastinum. The presentation of thoracic aortic aneurysms and of rupture of thoracic aortic aneurysms are discussed with particular reference to mechanisms of cardiovascular and respiratory manifestations. The importance of early control of the airway is emphasised if there is to be any hope of survival from acute rupture.
Collapse
Affiliation(s)
- D C Lindsay
- Department of Medicine, Royal Victoria Infirmary, Newcastle upon Tyne, U.K
| | | | | | | |
Collapse
|