Influence of chemistry and topography on the wettability of copper

To understand the complex interplay of topography and surface chemistry in wetting, fundamental studies investigating both parameters are needed. Due to the sensitivity of wetting to miniscule changes in one of the parameters it is imperative to precisely control the experimental approach. A profound understanding of their influence on wetting facilitates a tailored design of surfaces with unique functionality. We present a multi-step study: The influence of surface chemistry is analyzed by determining the adsorption of volatile carbonous species (A) and by sputter deposition of metallic copper and copper oxides on flat copper substrates (B). A precise surface topography is created by laser processing. Isotropic topography is created by ps laser processing (C), and hierarchical anisotropic line patterns are produced by direct laser interference patterning (DLIP) with different pulse durations (D). Our results reveal that the long-term wetting response of polished copper surfaces stabilizes with time despite ongoing accumulation of hydrocarbons and is dominated by this adsorption layer over the oxide state of the substrate (Cu, CuO, Cu2O). The surfaces' wetting response can be precisely tuned by tailoring the topography via laser processing. The sub-pattern morphology of primary line-like patterns showed great impact on the static contact angle, wetting anisotropy, and water adhesion. An increased roughness inside the pattern valleys combined with a minor roughness on pattern peaks favors air-inclusions, isotropic hydrophobicity, and low water adhesion. Increasing depth of the primary topography can also induce air-inclusions despite increasing peak roughness while time dependent wetting transitions were observed.

The Influence of Adventitious Carbon Groups on the Wetting of Copper: A Study on the Effect of Microstructure on the Static Contact Angle

Tuning of the wetting behavior of metallic surfaces by chemical and topographical modification has become popular in recent years. Still, there is a lack in the understanding of fundamental relations between intrinsic properties of the material and its resulting water contact angle. It is widely accepted in the literature that transitions from a hydrophilic to increasingly hydrophobic behavior upon exposure to ambient conditions happen due to the adsorption of adventitious hydrocarbons. In order to investigate the role of metallic bulk microstructure in the wetting behavior and its transition properties, we created three different grain sizes and deformation states on copper by preparation combined with heat treatment. We found that for freshly prepared surfaces, differences in the wetting behavior show a higher static contact angle for mechanically prepared surfaces with a fine-crystalline deformation layer compared to the electropolished cold-rolled copper sheet and the annealed defect-free coarse-grained surface. Already after five days of storage time, most of this difference vanishes, and all surfaces show a wetting behavior with a contact angle in the range of 97-100° after 30 days. Though long-term wetting behavior seems largely independent of microstructure, correlated XPS measurements showed an increased adsorption of organic contaminants of the mechanically polished surface. Preparation-induced near-surface defects seem to accelerate adsorption, while varying grain size and slight bulk deformation from rolling processes did not show significant effects. Complex relations between the amount of adsorbed carbon and the polarity of the adsorption film were found to depend on the sample age and influence the contact angle.

An in-depth evaluation of sample and measurement induced influences on static contact angle measurements

Static contact angle measurements are one of the most popular methods to analyze the wetting behavior of materials of any kind. Although this method is readily applicable without the need of sophisticated machinery, the results obtained for the very same material may vary strongly. The sensitivity of the measurement against environmental conditions, sample preparation and measurement conduction is a main factor for inconsistent results. Since often no detailed measurement protocols exist alongside published data, contact angle values as well as elaborated wetting studies do not allow for any comparison. This paper therefore aims to discuss possible influences on static contact angle measurements and to experimentally demonstrate the extent of these effects. Sample storage conditions, cleaning procedures, droplet volume, water grade and droplet application as well as the influence of evaporation on the static contact angle are investigated in detail. Especially sample storage led to differences in the contact angle up to 60%. Depending on the wetting state, evaporation can reduce the contact angle by 30–50% within 10 min in dry atmospheres. Therefore, this paper reviews an existing approach for a climate chamber and introduces a new measuring setup based on these results. It allows for the observation of the wetting behavior for several minutes by successfully suppressing evaporation without negatively affecting the surface prior to measurement by exposure to high humidity environments.

Janus bifunctional periodic mesoporous organosilica

Synthesis of a Janus periodic mesoporous organosilica material (JPMO) is presented here. In this strategy, the surface of the hollow silica material was selectively functionalized with two different bridged organic-inorganic hybrid groups. It was found that the resulting bifunctional material is able to form a stable Pickering emulsion. This new type of PMO material may be suitable for widespread applications in various fields related to material science and catalysis.

Achieving Ultra-Low Friction with Diamond/Metal Systems in Extreme Environments

In the search for achieving ultra-low friction for applications in extreme environments, we evaluate the interfacial processes of diamond/tungsten sliding contacts using an on-line macro-tribometer and a micro-tribometer in an ultra-high vacuum. The coefficient of friction for the tests with the on-line tribometer remained considerably low for unlubricated sliding of tungsten, which correlated well with the relatively low wear rates and low roughness on the wear track throughout the sliding. Ex situ analysis was performed by means of XPS and SEM-FIB in order to better understand the underlying mechanisms of low friction and low-wear sliding. The analysis did not reveal any evidence of tribofilm or transferfilm formation on the counterface, indicating the absence of significant bonding between the diamond and tungsten surfaces, which correlated well with the low-friction values. The minimal adhesive interaction and material transfer can possibly be explained by the low initial roughness values as well as high cohesive bonding energies of the two materials. The appearance of the wear track as well as the relatively higher roughness perpendicular to the sliding indicated that abrasion was the main wear mechanism. In order to elucidate the low friction of this tribocouple, we performed micro-tribological experiments in ultra-high vacuum conditions. The results show that the friction coefficient was reduced significantly in UHV. In addition, subsequently to baking the chamber, the coefficient of friction approached ultra-low values. Based on the results obtained in this study, the diamond/tungsten tribocouple seems promising for tribological interfaces in spacecraft systems, which can improve the durability of the components.

Absence of free carriers in silicon nanocrystals grown from phosphorus- and boron-doped silicon-rich oxide and oxynitride

Phosphorus- and boron-doped silicon nanocrystals (Si NCs) embedded in silicon oxide matrix can be fabricated by plasma-enhanced chemical vapour deposition (PECVD). Conventionally, SiH4 and N2O are used as precursor gasses, which inevitably leads to the incorporation of ≈10 atom % nitrogen, rendering the matrix a silicon oxynitride. Alternatively, SiH4 and O2 can be used, which allows for completely N-free silicon oxide. In this work, we investigate the properties of B- and P-incorporating Si NCs embedded in pure silicon oxide compared to silicon oxynitride by atom probe tomography (APT), low-temperature photoluminescence (PL), transient transmission (TT), and current-voltage (I-V) measurements. The results clearly show that no free carriers, neither from P- nor from B-doping, exist in the Si NCs, although in some configurations charge carriers can be generated by electric field ionization. The absence of free carriers in Si NCs ≤5 nm in diameter despite the presence of P- or B-atoms has severe implications for future applications of conventional impurity doping of Si in sub-10 nm technology nodes.

Precise in situ etch depth control of multilayered III-V semiconductor samples with reflectance anisotropy spectroscopy (RAS) equipment

Reflectance anisotropy spectroscopy (RAS) equipment is applied to monitor dry-etch processes (here specifically reactive ion etching (RIE)) of monocrystalline multilayered III-V semiconductors in situ. The related accuracy of etch depth control is better than 16 nm. Comparison with results of secondary ion mass spectrometry (SIMS) reveals a deviation of only about 4 nm in optimal cases. To illustrate the applicability of the reported method in every day settings for the first time the highly etch depth sensitive lithographic process to form a film lens on the waveguide ridge of a broad area laser (BAL) is presented. This example elucidates the benefits of the method in semiconductor device fabrication and also suggests how to fulfill design requirements for the sample in order to make RAS control possible.

Location and Electronic Nature of Phosphorus in the Si Nanocrystal--SiO2 System

Up to now, no consensus exists about the electronic nature of phosphorus (P) as donor for SiO₂-embedded silicon nanocrystals (SiNCs). Here, we report on hybrid density functional theory (h-DFT) calculations of P in the SiNC/SiO₂ system matching our experimental findings. Relevant P configurations within SiNCs, at SiNC surfaces, within the sub-oxide interface shell and in the SiO₂ matrix were evaluated. Atom probe tomography (APT) and its statistical evaluation provide detailed spatial P distributions. For the first time, we obtain ionisation states of P atoms in the SiNC/SiO₂ system at room temperature using X-ray absorption near edge structure (XANES) spectroscopy, eliminating structural artefacts due to sputtering as occurring in XPS. K energies of P in SiO₂ and SiNC/SiO₂ superlattices (SLs) were calibrated with non-degenerate P-doped Si wafers. results confirm measured core level energies, connecting and explaining XANES spectra with h-DFT electronic structures. While P can diffuse into SiNCs and predominantly resides on interstitial sites, its ionization probability is extremely low, rendering P unsuitable for introducing electrons into SiNCs embedded in SiO₂. Increased sample conductivity and photoluminescence (PL) quenching previously assigned to ionized P donors originate from deep defect levels due to P.

Surface softening in metal-ceramic sliding contacts: an experimental and numerical investigation

This study investigates the tribolayer properties at the interface of ceramic/metal (i.e., WC/W) sliding contacts using various experimental approaches and classical atomistic simulations. Experimentally, nanoindentation and micropillar compression tests, as well as adhesion mapping by means of atomic force microscopy, are used to evaluate the strength of tungsten-carbon tribolayers. To capture the influence of environmental conditions, a detailed chemical and structural analysis is performed on the worn surfaces by means of XPS mapping and depth profiling along with transmission electron microscopy of the debris particles. Experimentally, the results indicate a decrease in hardness and modulus of the worn surface compared to the unworn one. Atomistic simulations of nanoindentation on deformed and undeformed specimens are used to probe the strength of the WC tribolayer and despite the fact that the simulations do not include oxygen, the simulations correlate well with the experiments on deformed and undeformed surfaces, where the difference in behavior is attributed to the bonding and structural differences of amorphous and crystalline W-C. Adhesion mapping indicates a decrease in surface adhesion, which based on chemical analysis is attributed to surface passivation.

Atom probe tomography study of Mg-doped GaN layers

Atom probe tomography studies on highly Mg-doped homoepitaxial GaN (0001) layers with concentrations of 5 × 10(19) cm(-3) and 1 × 10(20) cm(-3) were performed. Mg cluster formation was observed only in the higher doped sample whereas in the lower doped sample the Mg distribution was homogeneous. CL measurements have shown that the emission normally attributed to stacking faults was only present in the lower doped layers (with Mg concentration of ∼5 × 10(19) cm(-3) or less), but absent in the higher doped layer, where Mg clusters were detected. Mg clusters are proposed to produce a screening effect, thereby destroying the exciton binding on the SFs and thus rendering them optically inactive.

Friction and wear mechanisms of tungsten-carbon systems: a comparison of dry and lubricated conditions

The unfolding of a sheared mechanically mixed third-body (TB) in tungsten/tungsten carbide sliding systems is studied using a combination of experiments and simulations. Experimentally, the topographical evolution and the friction response, for both dry and lubricated sliding, are investigated using an online tribometer. Ex situ X-ray photoelectron spectroscopy, transmission electron microscopy, and cross-sectional focused ion beam analysis of the structural and chemical changes near the surfaces show that dry sliding of tungsten against tungsten carbide results in plastic deformation of the tungsten surface, leading to grain refinement, and the formation of a mechanically mixed layer on the WC counterface. Sliding with hexadecane as a lubricant results in a less pronounced third-body formation due to much lower dissipated frictional power. Molecular dynamics simulations of the sliding couples predict chemical changes near the surface in agreement with the interfacial processes observed experimentally. Finally, online topography measurements demonstrate an excellent correlation between the evolution of the roughness and the frictional resistance during sliding.

Chemical and structural characterisation of DGEBA-based epoxies by time of flight secondary ion mass spectrometry (ToF-SIMS) as a preliminary to polymer interphase characterisation

Time-of-flight secondary ion mass spectrometry (ToF-SIMS) has become a powerful tool in the field of surface analysis since it provides information about the top few monolayers of a sample, i.e. on the chemical composition of the sample surface. Thus, the general question arises whether a surface-sensitive technique like ToF-SIMS would be appropriate to detect systematic chemical and/or structural changes in organic bulk polymers caused by varying a chemical content of the initial components or by tracking, e.g. curing processes in such materials. It is shown that careful sample preparation and the use of multivariate methods permit the quantitative acquisition of chemical and structural information about bulk polymers from the secondary ion signals. The hardener concentration and a cross-linking coefficient in diglycidyl ether of bisphenol A based epoxies were determined by ToF-SIMS measurements on samples with different resin to hardener ratio and varying curing time. In future work, we will use the developed method to investigate the local composition of adhesively bonded joints. In particular, the mapping of the chemical and structural properties in the so-called interphase will then be of interest.