Sub-single exciton optical gain threshold in colloidal semiconductor quantum wells with gradient alloy shelling.
Nat Commun 2020;
11:3305. [PMID:
32620749 PMCID:
PMC7335098 DOI:
10.1038/s41467-020-17032-8]
[Citation(s) in RCA: 18] [Impact Index Per Article: 4.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 06/06/2019] [Accepted: 05/28/2020] [Indexed: 11/29/2022] Open
Abstract
Colloidal semiconductor quantum wells have emerged as a promising material platform for use in solution-processable lasers. However, applications relying on their optical gain suffer from nonradiative Auger decay due to multi-excitonic nature of light amplification in II-VI semiconductor nanocrystals. Here, we show sub-single exciton level of optical gain threshold in specially engineered CdSe/CdS@CdZnS core/crown@gradient-alloyed shell quantum wells. This sub-single exciton ensemble-averaged gain threshold of (Ng)≈ 0.84 (per particle) resulting from impeded Auger recombination, along with a large absorption cross-section of quantum wells, enables us to observe the amplified spontaneous emission starting at an ultralow pump fluence of ~ 800 nJ cm−2, at least three-folds better than previously reported values among all colloidal nanocrystals. Finally, using these gradient shelled quantum wells, we demonstrate a vertical cavity surface-emitting laser operating at a low lasing threshold of 7.5 μJ cm−2. These results represent a significant step towards the realization of solution-processable electrically-driven colloidal lasers.
Colloidal quantum wells are highly promising for applications of solution-processed lasers, but their performance is limited by multi-excitonic nature of the materials. Here, the authors demonstrate optical gain in graded alloy core/shell CdSe/CdS@CdZnS quantum wells at less than one exciton per particle resulting in ultralow thresholds.
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