Khvostikov V, Khvostikova O, Potapovich N, Vlasov A, Salii R. Estimation of interaction parameters in the Al-Ga-As-Sn-Bi system.
Heliyon 2023;
9:e18063. [PMID:
37483788 PMCID:
PMC10362131 DOI:
10.1016/j.heliyon.2023.e18063]
[Citation(s) in RCA: 1] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 03/20/2023] [Revised: 07/05/2023] [Accepted: 07/05/2023] [Indexed: 07/25/2023] Open
Abstract
The development of GaAs based high power side-input photovoltaic converters requires thick (50-100 μm) transparent gradient refraction layers that can be grown by liquid phase epitaxy. Such thick layers can also be used in LED structures. To solve the problem of AlxGa1-xAs conductivity reduction at the x∼40% point a five-component, Al-Ga-As-Sn-Bi system is proposed. The interaction parameters in the liquid phase (αij) in the Al-Ga-As-Sn-Bi system are determined within the framework of a quasi-regular solutions model. For an AlxGa1-xAs solid solution growing from a Ga-melt containing 10 at.% of Bi (as a neutral solvent) and 15 at.% of Sn (as an n-type dopant), liquidus and solidus isotherms for 900 °C are modeled based on the calculated αij. Satisfactory agreement between calculated and experimental data has been obtained. Hall data show that AlGaAs layers grown from Bi-containing melts have n-type conductivity. Doping by tin during growth from mixed Ga-Bi melts makes it possible to increase the electron concentration in the AlGaAs layer.
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