Enhancing Photoluminescence and Mobilities in WS2 Monolayers with Oleic Acid Ligands

Many potential applications of monolayer transition metal dichalcogenides (TMDs) require both high photoluminescence (PL) yield and high electrical mobilities. However, the PL yield of as prepared TMD monolayers is low and believed to be limited by defect sites and uncontrolled doping. This has led to a large effort to develop chemical passivation methods to improve PL and mobilities. The most successful of these treatments is based on the nonoxidizing organic "superacid" bis(trifluoromethane)sulfonimide (TFSI) which has been shown to yield bright monolayers of molybdenum disulfide (MoS2) and tungsten disulfide (WS2) but with trap-limited PL dynamics and no significant improvements in field effect mobilities. Here, using steady-state and time-resolved PL microscopy we demonstrate that treatment of WS2 monolayers with oleic acid (OA) can greatly enhance the PL yield, resulting in bright neutral exciton emission comparable to TFSI treated monolayers. At high excitation densities, the OA treatment allows for bright trion emission, which has not been demonstrated with previous chemical treatments. We show that unlike the TFSI treatment, the OA yields PL dynamics that are largely trap free. In addition, field effect transistors show an increase in mobilities with the OA treatment. These results suggest that OA serves to passivate defect sites in the WS2 monolayers in a manner akin to the passivation of colloidal quantum dots with OA ligands. Our results open up a new pathway to passivate and tune defects in monolayer TMDs using simple "wet" chemistry techniques, allowing for trap-free electronic properties and bright neutral exciton and trion emission.

Ultrafast Tracking of Exciton and Charge Carrier Transport in Optoelectronic Materials on the Nanometer Scale

We present a novel optical transient absorption and reflection microscope based on a diffraction-limited pump pulse in combination with a wide-field probe pulse, for the spatiotemporal investigation of ultrafast population transport in thin films. The microscope achieves a temporal resolution down to 12 fs and simultaneously provides sub-10 nm spatial accuracy. We demonstrate the capabilities of the microscope by revealing an ultrafast excited-state exciton population transport of up to 32 nm in a thin film of pentacene and by tracking the carrier motion in p-doped silicon. The use of few-cycle optical excitation pulses enables impulsive stimulated Raman microspectroscopy, which is used for in situ verification of the chemical identity in the 100-2000 cm^-1 spectral window. Our methodology bridges the gap between optical microscopy and spectroscopy, allowing for the study of ultrafast transport properties down to the nanometer length scale.

Room-Temperature Photoluminescence Mediated by Sulfur Vacancies in 2D Molybdenum Disulfide

Atomic defects in monolayer transition metal dichalcogenides (TMDs) such as chalcogen vacancies significantly affect their properties. In this work, we provide a reproducible and facile strategy to rationally induce chalcogen vacancies in monolayer MoS₂ by annealing at 600 °C in an argon/hydrogen (95%/5%) atmosphere. Synchrotron X-ray photoelectron spectroscopy shows that a Mo 3d_5/2 core peak at 230.1 eV emerges in the annealed MoS₂ associated with nonstoichiometric MoS_x (0 < x < 2), and Raman spectroscopy shows an enhancement of the ∼380 cm^-1 peak that is attributed to sulfur vacancies. At sulfur vacancy densities of ∼1.8 × 10¹⁴ cm^-2, we observe a defect peak at ∼1.72 eV (referred to as LX_D) at room temperature in the photoluminescence (PL) spectrum. The LX_D peak is attributed to excitons trapped at defect-induced in-gap states and is typically observed only at low temperatures (≤77 K). Time-resolved PL measurements reveal that the lifetime of defect-mediated LX_D emission is longer than that of band edge excitons, both at room and low temperatures (∼2.44 ns at 8 K). The LX_D peak can be suppressed by annealing the defective MoS₂ in sulfur vapor, which indicates that it is possible to passivate the vacancies. Our results provide insights into how excitonic and defect-mediated PL emissions in MoS₂ are influenced by sulfur vacancies at room and low temperatures.

Long-range corrected exchange-correlation kernels to describe excitons in second-harmonic generation

We investigate the role of excitons in second-harmonic generation (SHG) through the long-range corrected (LRC) exchange-correlation kernels: empirical LRC, Bootstrap, and jellium-with-a-gap model. We calculate the macroscopic second-order frequency-dependent susceptibility χ⁽²⁾. We also present the frequency-dependent macroscopic dielectric function ϵ_M which is a fundamental quantity in the theoretical derivation of χ⁽²⁾. We assess the role of the long-range kernels in describing excitons in materials with different symmetry types: cubic zincblende, hexagonal wurtzite, and tetragonal symmetry. Our studies indicate that excitons play an important role in χ⁽²⁾ bringing a strong enhancement of the SHG signal. Moreover, we found that the SHG enhancement follows a simple trend determined by the magnitude of the long-range corrected α-parameter. This trend is material dependent.

Directed Energy Transfer from Monolayer WS2 to Near-Infrared Emitting PbS-CdS Quantum Dots

Heterostructures of two-dimensional (2D) transition metal dichalcogenides (TMDs) and inorganic semiconducting zero-dimensional (0D) quantum dots (QDs) offer useful charge and energy transfer pathways, which could form the basis of future optoelectronic devices. To date, most have focused on charge transfer and energy transfer from QDs to TMDs, that is, from 0D to 2D. Here, we present a study of the energy transfer process from a 2D to 0D material, specifically exploring energy transfer from monolayer tungsten disulfide (WS₂) to near-infrared emitting lead sulfide-cadmium sulfide (PbS-CdS) QDs. The high absorption cross section of WS₂ in the visible region combined with the potentially high photoluminescence (PL) efficiency of PbS QD systems makes this an interesting donor-acceptor system that can effectively use the WS₂ as an antenna and the QD as a tunable emitter, in this case, downshifting the emission energy over hundreds of millielectron volts. We study the energy transfer process using photoluminescence excitation and PL microscopy and show that 58% of the QD PL arises due to energy transfer from the WS₂. Time-resolved photoluminescence microscopy studies show that the energy transfer process is faster than the intrinsic PL quenching by trap states in the WS₂, thus allowing for efficient energy transfer. Our results establish that QDs could be used as tunable and high PL efficiency emitters to modify the emission properties of TMDs. Such TMD-QD heterostructures could have applications in light-emitting technologies or artificial light-harvesting systems or be used to read out the state of TMD devices optically in various logic and computing applications.

Direct observation of ultrafast singlet exciton fission in three dimensions

We present quantitative ultrafast interferometric pump-probe microscopy capable of tracking of photoexcitations with sub-10 nm spatial precision in three dimensions with 15 fs temporal resolution, through retrieval of the full transient photoinduced complex refractive index. We use this methodology to study the spatiotemporal dynamics of the quantum coherent photophysical process of ultrafast singlet exciton fission. Measurements on microcrystalline pentacene films grown on glass (SiO₂) and boron nitride (hBN) reveal a 25 nm, 70 fs expansion of the joint-density-of-states along the crystal a,c-axes accompanied by a 6 nm, 115 fs change in the exciton density along the crystal b-axis. We propose that photogenerated singlet excitons expand along the direction of maximal orbital π-overlap in the crystal a,c-plane to form correlated triplet pairs, which subsequently electronically decouples into free triplets along the crystal b-axis due to molecular sliding motion of neighbouring pentacene molecules. Our methodology lays the foundation for the study of three dimensional transport on ultrafast timescales.

Optical and Electronic Properties of Colloidal CdSe Quantum Rings

Luminescent colloidal CdSe nanorings are a recently developed type of semiconductor structure that have attracted interest due to the potential for rich physics arising from their nontrivial toroidal shape. However, the exciton properties and dynamics of these materials with complex topology are not yet well understood. Here, we use a combination of femtosecond vibrational spectroscopy, temperature-resolved photoluminescence (PL), and single-particle measurements to study these materials. We find that on transformation of CdSe nanoplatelets to nanorings, by perforating the center of platelets, the emission lifetime decreases and the emission spectrum broadens due to ensemble variations in the ring size and thickness. The reduced PL quantum yield of nanorings (∼10%) compared to platelets (∼30%) is attributed to an enhanced coupling between (i) excitons and CdSe LO-phonons at 200 cm^-1 and (ii) negatively charged selenium-rich traps, which give nanorings a high surface charge (∼-50 mV). Population of these weakly emissive trap sites dominates the emission properties with an increased trap emission at low temperatures relative to excitonic emission. Our results provide a detailed picture of the nature of excitons in nanorings and the influence of phonons and surface charge in explaining the broad shape of the PL spectrum and the origin of PL quantum yield losses. Furthermore, they suggest that the excitonic properties of nanorings are not solely a consequence of the toroidal shape but also a result of traps introduced by puncturing the platelet center.

Isolation and characterisation of monolayer phosphorene analogues

Atomically thin group IV monochalcogenides or phosphorene analogues are a promising family of materials. Theoretical calculations predict that monolayers (MLs) should be semiconducting, ferroelectric and ferroelastic at room temperature, exhibit large charge mobilities and large non-linear optical response. Yet, experimental studies of these systems are scarce because of the difficulty to produce such MLs. Here we focus on two members of this family: GeSe and SnS. We demonstrate a simple mechanical exfoliation method to produce ML samples on gold substrates. We observe the evolution of the Raman scattering as a function of layers and the anisotropic optical response from reflectance contrast measurements. To the best of our knowledge this is the first report of mechanical exfoliation down to the ML of these materials and the first realisation of ML GeSe.

Photoredox phase engineering of transition metal dichalcogenides

Crystallographic phase engineering plays an important part in the precise control of the physical and electronic properties of materials. In two-dimensional transition metal dichalcogenides (2D TMDs), phase engineering using chemical lithiation with the organometallization agent n-butyllithium (n-BuLi), to convert the semiconducting 2H (trigonal) to the metallic 1T (octahedral) phase, has been widely explored for applications in areas such as transistors, catalysis and batteries1-15. Although this chemical phase engineering can be performed at ambient temperatures and pressures, the underlying mechanisms are poorly understood, and the use of n-BuLi raises notable safety concerns. Here we optically visualize the archetypical phase transition from the 2H to the 1T phase in mono- and bilayer 2D TMDs and discover that this reaction can be accelerated by up to six orders of magnitude using low-power illumination at 455 nm. We identify that the above-gap illumination improves the rate-limiting charge-transfer kinetics through a photoredox process. We use this method to achieve rapid and high-quality phase engineering of TMDs and demonstrate that this methodology can be harnessed to inscribe arbitrary phase patterns with diffraction-limited edge resolution into few-layer TMDs. Finally, we replace pyrophoric n-BuLi with safer polycyclic aromatic organolithiation agents and show that their performance exceeds that of n-BuLi as a phase transition agent. Our work opens opportunities for exploring the in situ characterization of electrochemical processes and paves the way for sustainably scaling up materials and devices by photoredox phase engineering.

Correlating activities and defects in (photo)electrocatalysts using in-situ multi-modal microscopic imaging

Photo(electro)catalysts use sunlight to drive chemical reactions such as water splitting. A major factor limiting photocatalyst development is physicochemical heterogeneity which leads to spatially dependent reactivity. To link structure and function in such systems, simultaneous probing of the electrochemical environment at microscopic length scales and a broad range of timescales (ns to s) is required. Here, we address this challenge by developing and applying in-situ (optical) microscopies to map and correlate local electrochemical activity, with hole lifetimes, oxygen vacancy concentrations and photoelectrode crystal structure. Using this multi-modal approach, we study prototypical hematite (α-Fe2O3) photoelectrodes. We demonstrate that regions of α-Fe2O3, adjacent to microstructural cracks have a better photoelectrochemical response and reduced back electron recombination due to an optimal oxygen vacancy concentration, with the film thickness and extended light exposure also influencing local activity. Our work highlights the importance of microscopic mapping to understand activity, in even seemingly homogeneous photoelectrodes.

Direct Imaging of Carrier Funneling in a Dielectric Engineered 2D Semiconductor

In atomically thin transition-metal dichalcogenides (TMDCs), the environmental sensitivity of the strong Coulomb interaction offers promising approaches to create spatially varying potential landscapes in the same continuous material by tuning its dielectric environment. Thus, allowing for control of transport. However, a scalable and CMOS-compatible method for achieving this is required to harness these effects in practical applications. In addition, because of their ultrashort lifetime, observing the spatiotemporal dynamics of carriers in monolayer TMDCs, on the relevant time scale, is challenging. Here, we pattern and deposit a thin film of hafnium oxide (HfO2) via atomic layer deposition (ALD) on top of a monolayer of WSe2. This allows for the engineering of the dielectric environment of the monolayer and design of heterostructures with nanoscale spatial resolution via a highly scalable postsynthesis methodology. We then directly image the transport of photoexcitations in the monolayer with 50 fs time resolution and few-nanometer spatial precision, using a pump probe microscopy technique. We observe the unidirectional funneling of charge carriers, from the unpatterned to the patterned areas, over more than 50 nm in the first 20 ps with velocities of over 2 × 103 m/s at room temperature. These results demonstrate the possibilities offered by dielectric engineering via ALD patterning, allowing for arbitrary spatial patterns that define the potential landscape and allow for control of the transport of excitations in atomically thin materials. This work also shows the power of the transient absorption methodology to image the motion of photoexcited states in complex potential landscapes on ultrafast time scales.