An on/off Berry phase switch in circular graphene resonators

The phase of a quantum state may not return to its original value after the system's parameters cycle around a closed path; instead, the wave function may acquire a measurable phase difference called the Berry phase. Berry phases typically have been accessed through interference experiments. Here, we demonstrate an unusual Berry phase-induced spectroscopic feature: a sudden and large increase in the energy of angular-momentum states in circular graphene p-n junction resonators when a relatively small critical magnetic field is reached. This behavior results from turning on a π Berry phase associated with the topological properties of Dirac fermions in graphene. The Berry phase can be switched on and off with small magnetic field changes on the order of 10 millitesla, potentially enabling a variety of optoelectronic graphene device applications.

Conductance of small molecular junctions

A new method of fabricating small metal-molecule-metal junctions is developed, approaching the single-molecule limit. The conductance of different conjugated molecules in a broad temperature, source-drain, and gate voltage regime is reported. At low temperature, all investigated molecules display sharp conductance steps periodic in source-drain voltage. The position of these steps can be controlled by a gate potential. The spacing corresponds to the energy of the lowest molecular vibrations. These results show that the low-bias conductance of molecules is dominated by resonant tunneling through coupled electronic and vibration levels.

Localization-delocalization transition in quantum dots

Single-electron capacitance spectroscopy precisely measures the energies required to add individual electrons to a quantum dot. The spatial extent of electronic wave functions is probed by investigating the dependence of these energies on changes in the dot confining potential. For low electron densities, electrons occupy distinct spatial sites localized within the dot. At higher densities, the electrons become delocalized, and all wave functions are spread over the full dot area. Near the delocalization transition, the last remaining localized states exist at the perimeter of the dot. Unexpectedly, these electrons appear to bind with electrons in the dot center.

Interaction-driven quantum Hall wedding cake-like structures in graphene quantum dots

Quantum-relativistic matter is ubiquitous in nature; however, it is notoriously difficult to probe. The ease with which external electric and magnetic fields can be introduced in graphene opens a door to creating a tabletop prototype of strongly confined relativistic matter. Here, through a detailed spectroscopic mapping, we directly visualize the interplay between spatial and magnetic confinement in a circular graphene resonator as atomic-like shell states condense into Landau levels. We directly observe the development of a "wedding cake"-like structure of concentric regions of compressible-incompressible quantum Hall states, a signature of electron interactions in the system. Solid-state experiments can, therefore, yield insights into the behavior of quantum-relativistic matter under extreme conditions.

Paper in Electronic and Optoelectronic Devices

Paper, one of the oldest materials for storage and exchange of human's information, has been reinvented as a building component of electronic and optoelectronic devices over the past decades with successful demonstration of paper-based or paper-using devices. These recent achievements can meet the demand for lightweight, cost-effective, and/or flexible electronic and optoelectronic devices with advanced functionality and reduced manufacturing costs. This article provides a review of electronic and optoelectronic devices relying on or making use of the unique properties achievable with paper-based materials. Basic scientific/technical principles, quantitative comparisons of material, electronic and/or optical properties, and benefits for each paper-based application are given. Application-specific research challenges, future design considerations, and development directions are also discussed.

Chemical modification of the electronic conducting states in polymer nanodevices

Organic materials offer new electronic functionality not available in inorganic devices. However, the integration of organic compounds within nanoscale electronic circuitry poses new challenges for materials physics and chemistry. Typically, the electronic states in organic materials are energetically misaligned with the Fermi level of metal contacts. Here, we study the voltage-induced change in conductivity in nanoscale devices comprising a monolayer of polyelectrolyte macromolecules. The devices are fabricated using integrated shadow masks. Reversible switching is observed between conducting (ON) and non-conducting (OFF) states in the devices. The open design of our devices easily permits chemical modification of the polyelectrolyte, which we show has a pronounced effect on the ON-OFF switching. We suggest that the switching voltage ionizes the polymers, creating a conducting channel of electronic levels aligned with the contact Fermi level.

Enhanced carrier transport along edges of graphene devices

The relation between macroscopic charge transport properties and microscopic carrier distribution is one of the central issues in the physics and future applications of graphene devices (GDs). We find strong conductance enhancement at the edges of GDs using scanning gate microscopy. This result is explained by our theoretical model of the opening of an additional conduction channel localized at the edges by depleting accumulated charge by the tip.

Single- and multigrain nanojunctions with a self-assembled monolayer of conjugated molecules

Systematic conductivity measurements in nanoscale junctions containing a self-assembled monolayer of conjugated molecules are reported. Different conductivity mechanisms are identified depending on the granularity of the metal used as a substrate for assembling the monolayer. Unexpectedly, the energy scale controlling the dominant conductance channels is quite low in comparison with the molecular level spacing. In single-grain junctions, the dominant conductance mechanism is hopping with an energy scale of the order of 10-100 meV determined by the nature of the metal contacts. In the case of multigrain junctions, additional tunnel conductance is observed with low-energy Coulomb-blockade features.

Renormalization of the graphene dispersion velocity determined from scanning tunneling spectroscopy

In graphene, as in most metals, electron-electron interactions renormalize the properties of electrons but leave them behaving like noninteracting quasiparticles. Many measurements probe the renormalized properties of electrons right at the Fermi energy. Uniquely for graphene, the accessibility of the electrons at the surface offers the opportunity to use scanned probe techniques to examine the effect of interactions at energies away from the Fermi energy, over a broad range of densities, and on a local scale. Using scanning tunneling spectroscopy, we show that electron interactions leave the graphene energy dispersion linear as a function of excitation energy for energies within ±200  meV of the Fermi energy. However, the measured dispersion velocity depends on density and increases strongly as the density approaches zero near the charge neutrality point, revealing a squeezing of the Dirac cone due to interactions.

Scanning Tunneling Spectroscopy of Proximity Superconductivity in Epitaxial Multilayer Graphene

We report on spatial measurements of the superconducting proximity effect in epitaxial graphene induced by a graphene-superconductor interface. Superconducting aluminum films were grown on epitaxial multilayer graphene on SiC. The aluminum films were discontinuous with networks of trenches in the film morphology reaching down to exposed graphene terraces. Scanning tunneling spectra measured on the graphene terraces show a clear decay of the superconducting energy gap with increasing separation from the graphene-aluminum edges. The spectra were well described by Bardeen-Cooper-Schrieffer (BCS) theory. The decay length for the superconducting energy gap in graphene was determined to be greater than 400 nm. Deviations in the exponentially decaying energy gap were also observed on a much smaller length scale of tens of nanometers.

Origin of nanoscale variations in photoresponse of an organic solar cell

Photogenerated charge transport in bulk heterojunction (BHJ) solar cells is strongly dependent on the active layer nanomorphology resulting from phase segregation. Here, we systematically study the nanoscale photocurrent response from BHJs based on poly(3-hexylthiophene) and phenyl-C61-butyric acid methyl ester (P3HT-PCBM) with a photoconductive atomic force microscope (PCAFM). The photocurrent is either collected directly by the tip or through nanopatterned metal contacts. The photoresponse measured at the top surface shows significant inhomogeneity on the length scale of 100-500 nm with large low-efficiency regions, consistent with existence of a P3HT-rich skin layer of approximately 10 nm thick. The measurements with the nanocontacts validate the PCAFM results and demonstrate that the inhomogeneity averages to the conventional device result. Additionally, we use an ultralow angle microtomy (ULAM) technique to slice the active layer and create wedges along these cuts for probing of nanomorphology in the bulk. AFM images show a striking contrast between the top surface and the ULAM exposed material, revealing much finer features related to phase segregation below the skin layer and sub-100 nm length scales for charge transport.

Nanoscale Mapping of the Double Layer Potential at the Graphene-Electrolyte Interface

The electrical double layer (EDL) governs the operation of multiple electrochemical devices, determines reaction potentials, and conditions ion transport through cellular membranes in living organisms. The few existing methods of EDL probing have low spatial resolution, usually only providing spatially averaged information. On the other hand, traditional Kelvin probe force microscopy (KPFM) is capable of mapping potential with nanoscale lateral resolution but cannot be used in electrolytes with concentrations higher than several mmol/L. Here, we resolve this experimental impediment by combining KPFM with graphene-capped electrolytic cells to quantitatively measure the potential drop across the EDL in aqueous electrolytes of decimolar and molar concentrations with a high lateral resolution. The surface potential of graphene in contact with deionized water and 0.1 mol/L solutions of CuSO₄ and MgSO₄ as a function of counter electrode voltage is reported. The measurements are supported by numerical modeling to reveal the role of the graphene membrane in potential screening and to determine the EDL potential drop. The proposed approach proves to be especially useful for imaging spatially inhomogeneous systems, such as nanoparticles submerged in an electrolyte solution. It could be suitable for in operando and in vivo measurements of the potential drop in the EDL on the surfaces of nanocatalysts and biological cells in equilibrium with liquid solutions.

Edge channels of broken-symmetry quantum Hall states in graphene visualized by atomic force microscopy

The quantum Hall (QH) effect, a topologically non-trivial quantum phase, expanded the concept of topological order in physics bringing into focus the intimate relation between the "bulk" topology and the edge states. The QH effect in graphene is distinguished by its four-fold degenerate zero energy Landau level (zLL), where the symmetry is broken by electron interactions on top of lattice-scale potentials. However, the broken-symmetry edge states have eluded spatial measurements. In this article, we spatially map the quantum Hall broken-symmetry edge states comprising the graphene zLL at integer filling factors of [Formula: see text] across the quantum Hall edge boundary using high-resolution atomic force microscopy (AFM) and show a gapped ground state proceeding from the bulk through to the QH edge boundary. Measurements of the chemical potential resolve the energies of the four-fold degenerate zLL as a function of magnetic field and show the interplay of the moiré superlattice potential of the graphene/boron nitride system and spin/valley symmetry-breaking effects in large magnetic fields.

Nanoscale imaging of photocurrent and efficiency in CdTe solar cells

The local collection characteristics of grain interiors and grain boundaries in thin-film CdTe polycrystalline solar cells are investigated using scanning photocurrent microscopy. The carriers are locally generated by light injected through a small aperture (50-300 nm) of a near-field scanning optical microscope in an illumination mode. Possible influence of rough surface topography on light coupling is examined and eliminated by sculpting smooth wedges on the granular CdTe surface. By varying the wavelength of light, nanoscale spatial variations in external quantum efficiency are mapped. We find that the grain boundaries (GBs) are better current collectors than the grain interiors (GIs). The increased collection efficiency is caused by two distinct effects associated with the material composition of GBs. First, GBs are charged, and the corresponding built-in field facilitates the separation and the extraction of the photogenerated carriers. Second, the GB regions generate more photocurrent at long wavelength corresponding to the band edge, which can be caused by a smaller local band gap. Resolving carrier collection with nanoscale resolution in solar cell materials is crucial for optimizing the polycrystalline device performance through appropriate thermal processing and passivation of defects and surfaces.

Strain Engineering a 4a×√3a Charge Density Wave Phase in Transition Metal Dichalcogenide 1T-VSe2

We report a rectangular charge density wave (CDW) phase in strained 1T-VSe2 thin films synthesized by molecular beam epitaxy on c-sapphire substrates. The observed CDW structure exhibits an unconventional rectangular 4a×√3a periodicity, as opposed to the previously reported hexagonal 4a×4a structure in bulk crystals and exfoliated thin layered samples. Tunneling spectroscopy shows a strong modulation of the local density of states of the same 4a×√3a CDW periodicity and an energy gap of 2ΔCDW = (9.1 ± 0.1) meV. The CDW energy gap evolves into a full gap at temperatures below 500 mK, indicating a transition to an insulating phase at ultra-low temperatures. First-principles calculations confirm the stability of both 4a×4a and 4a×√3a structures arising from soft modes in the phonon dispersion. The unconventional structure becomes preferred in the presence of strain, in agreement with experimental findings.

Unveiling Defect-Mediated Charge-Carrier Recombination at the Nanometer Scale in Polycrystalline Solar Cells

Solar cells made of polycrystalline thin-films can outperform their single-crystalline counterparts despite the presence of grain boundaries (GBs). To unveil the influence of GBs, high spatial resolution characterization techniques are needed to measure local properties in their vicinity. However, results obtained using single technique may provide limited aspects about the GB effect. Here, we employ two techniques, near-field scanning photocurrent microscopy (NSPM) and scanning transmission electron microscope based cathodoluminescence spectroscopy (STEM-CL), to characterize CdTe solar cells at the nanoscale. The signal contrast from the grain interiors (GIs) to the GBs, for high-efficiency cells where CdTe is deposited at a high substrate temperature (500 °C) and treated by CdCl₂, is found reverse from one technique to another. NSPM reveals increased photocurrents at the GBs, while STEM-CL shows reduced CL intensity and energy redshifts of the spectral peak at the GBs. The results are attributed to the increased nonradiative recombination and the band bending mediated by the surface defects and the shallow-level defects at GBs, respectively. We discuss the advantages of sample geometry for room-temperature STEM-CL and present numerical simulations as well as analytical models to extract the ratio of GB recombination velocity to minority carrier diffusivity that can be used for evaluating the GB effect in other polycrystalline solar cells.

Localization in artificial disorder: two coupled quantum dots

Using single electron capacitance spectroscopy, we study electron additions in quantum dots containing two potential minima separated by a shallow barrier. Analysis of the addition spectra in the magnetic field allows us to distinguish between electrons delocalized over the entire dot and those localized in either of the potential minima. We demonstrate that a high magnetic field abruptly splits up a low-density droplet into two smaller fragments, each residing in a potential minimum. An unexplained cancellation of electron repulsion between electrons in these fragments gives rise to paired electron additions.

Depletion region surface effects in electron beam induced current measurements

Electron beam induced current (EBIC) is a powerful characterization technique which offers the high spatial resolution needed to study polycrystalline solar cells. Current models of EBIC assume that excitations in the p-n junction depletion region result in perfect charge collection efficiency. However we find that in CdTe and Si samples prepared by focused ion beam (FIB) milling, there is a reduced and nonuniform EBIC lineshape for excitations in the depletion region. Motivated by this, we present a model of the EBIC response for excitations in the depletion region which includes the effects of surface recombination from both charge-neutral and charged surfaces. For neutral surfaces we present a simple analytical formula which describes the numerical data well, while the charged surface response depends qualitatively on the location of the surface Fermi level relative to the bulk Fermi level. We find the experimental data on FIB-prepared Si solar cells is most consistent with a charged surface, and discuss the implications for EBIC experiments on polycrystalline materials.

Tomography of a Probe Potential Using Atomic Sensors on Graphene

Our ability to access and explore the quantum world has been greatly advanced by the power of atomic manipulation and local spectroscopy with scanning tunneling and atomic force microscopes, where the key technique is the use of atomically sharp probe tips to interact with an underlying substrate. Here we employ atomic manipulation to modify and quantify the interaction between the probe and the system under study that can strongly affect any measurement in low charge density systems, such as graphene. We transfer Co atoms from a graphene surface onto a probe tip to change and control the probe's physical structure, enabling us to modify the induced potential at a graphene surface. We utilize single Co atoms on a graphene field-effect device as atomic scale sensors to quantitatively map the modified potential exerted by the scanning probe over the whole relevant spatial and energy range.