Gamma radiation-induced nanodefects in diffusive memristors and artificial neurons

Gamma photons with an average energy of 1.25 MeV are well-known to generate large amounts of defects in semiconductor electronic devices. Here we investigate the novel effect of gamma radiation on diffusive memristors based on metallic silver nanoparticles dispersed in a dielectric matrix of silica. Our experimental findings show that after exposure to radiation, the memristors and artificial neurons made of them demonstrate much better performance in terms of stable volatile resistive switching and higher spiking frequencies, respectively, compared to the pristine samples. At the same time we observe partial oxidation of silver and reduction of silicon within the switching silica layer. We propose nanoinclusions of reduced silicon distributed across the silica layer to be the backbone for metallic nanoparticles to form conductive filaments, as supported by our theoretical simulations of radiation-induced changes in the diffusion process. Our findings propose a new opportunity to engineer the required characteristics of diffusive memristors in order to emulate biological neurons and develop bio-inspired computational technology.

Engineered spatial inversion symmetry breaking in an oxide heterostructure built from isosymmetric room-temperature magnetically ordered components

Weak ferromagnetism and piezoelectricity are combined in an oxide heterostructure at room temperature.

Coexistence of antiferromagnetic and spin cluster glass order in the magnetoelectric relaxor multiferroic PbFe 0.5 Nb 0.5 O3

The coexistence of cluster glass with long-range antiferromagnetic order in the relaxor ferroelectric PbFe 0.5 Nb 0.5 O3 is elucidated. While the transition at T(N) = 153 K on the infinite antiferromagnetic cluster induces 3m symmetry with large EH2 magnetoelectric response, the disconnected subspace of isolated Fe3+ ions and finite clusters accommodates the cluster glass below T(g) = 10.6 K with field-induced m' symmetry and EH-type magnetoelectric response. Critical slowing-down, memory and rejuvenation after aging, occurrence of a de Almeida-Thouless phase line, and stretched exponential relaxation of remanence corroborate the glass nature.

(Sr,Mn)TiO3: a magnetoelectric multiglass

By close analogy with multiferroic materials with coexisting long-range electric and magnetic orders a "multiglass" scenario of two different glassy states is observed in Sr(0.98)Mn(0.02)TiO(3) ceramics. Sr-site substituted Mn2+ ions are at the origin of both a polar and a spin glass with glass temperatures T(g) approximately equal to 38 K and < or =34 K, respectively. The structural freezing triggers that of the spins, and both glassy systems show individual memory effects. Thanks to strong spin-phonon interaction within the incipient ferroelectric host crystal SrTiO3, large higher order magnetoelectric coupling occurs between both glass systems.

Superconducting quantum interference device setup for magnetoelectric measurements

A commercial superconducting quantum interference device (SQUID) setup (MPMS 5S from Quantum Design), equipped with a magnetic ac susceptibility option, is modified for measurements of the linear magnetoelectric (ME) effect, i.e., of the magnetic moment induced by an applied external electric field in a ME sample. Test measurements on a Cr(2)O(3) (111) single crystal are in excellent agreement with previously reported data of its ME susceptibility. The main advantages of the proposed setup are the improved precision due to the high sensitivity of the SQUID magnetometer in combination with the lock-in technique and a relatively simple experimental realization.