Uncovering the Mechanisms of Triplet-Triplet Annihilation Upconversion Enhancement via Plasmonic Nanocavity Tuning

The nonlinear conversion of photons from lower to higher energy is important for a wide range of applications, from quantum communications and optoelectronics to solar energy conversion and medicine. Triplet-triplet annihilation upconversion (TTA UC), which utilizes an absorber/emitter molecular pair, is a promising tool for upconversion applications requiring low intensity light such as photovoltaics, photocatalysis, and bioimaging. Despite demonstrations of efficient TTA UC in solution, practical applications have proven difficult, as thin films retard the necessary energy transfer steps and result in low emission yields. In this work, TTA UC emission from a thin film is greatly enhanced through integration into plasmonic nanogap cavities consisting of a silver mirror, a nanometer-scale polymer spacer containing a TTA molecular pair, and colloidally synthesized silver nanocubes. Mechanistic studies performed by varying the nanocube side length (45-150 nm) to tune the nanogap cavity resonance paired with simulations reveal absorption rate enhancement to be the primary operative mechanism in overall TTA UC emission enhancement. This absorption enhancement decreases the TTA UC threshold intensity by an order of magnitude and allows TTA UC emission to be excited with light up to 120 nm redder than the usable wavelength range for the control samples. Further, combined nanogap cavities composed of two distinct nanocube sizes result in surfaces which simultaneously enhance the absorption rate and emission rate. These dual-size nanogap cavities result in 45-fold TTA UC emission enhancement. In total, these studies present TTA UC emission enhancement, illustrate how the usable portion of the spectrum can be expanded for a given sensitizer-emitter pair, and develop both mechanistic understanding and design rules for TTA UC emission enhancement by plasmonic nanostructures.

Tracking light-induced charge transport

Precise charge dynamics could help to improve the operation of solar cells and sensors.

Ultrathin Pyroelectric Photodetector with Integrated Polarization-Sensing Metasurface

An abundance of metallic metasurfaces have been realized with miniscule, intricate features capable of tailored scattering, reflection, and absorption; however, high losses through heat limit their use in optoelectronics. Here, codesign of a detector and a polarization-sensing metasurface overcomes this challenge by utilizing the heat generation for integrated pyroelectric detection of the incoming light polarization. Using a nanogap metasurface with asymmetric metallic elements, polarization-sensitive photodetection exhibits high extinction ratios up to 19 for orthogonally polarized light and allows extraction of Stokes parameters with <12% deviation from theoretical values. This polarization-sensitive photodetector is ultrathin, consisting of active layers of only 290 nm, and exhibits fast response times of ∼2 ns. The structure is fully integrated, requiring no external cameras, detectors, or power sources, and points toward the creation of layered, multifunctional devices that utilize exotic metasurface properties for novel and compact sensing and imaging.

Impact of Molecular Orientation on Lateral and Interfacial Electron Transfer at Oxide Interfaces

Molecular dyes, called sensitizers, with a cis-[Ru(LL)(dcb)(NCS)₂] structure, where dcb is 4,4'-(CO₂H)₂-2,2'-bipyridine and LL is dcb or a different diimine ligand, are among the most optimal for application in dye-sensitized solar cells (DSSCs). Herein, a series of five sensitizers, three bearing two dcb ligands and two bearing one dcb ligand, were anchored to mesoporous thin films of conducting tin-doped indium oxide (ITO) or semiconducting TiO₂ nanocrystallites. The number of dcb ligands impacts the surface orientation of the sensitizer; density functional theory (DFT) calculations revealed an ∼1.6 Å smaller distance between the oxide surface and the Ru metal center for sensitizers with two dcb ligands. Interfacial electron transfer kinetics from the oxide material to the oxidized sensitizer were measured as a function of the thermodynamic driving force. Analysis of the kinetic data with Marcus-Gerischer theory indicated that the electron coupling matrix element, H_ab, was sensitive to distance and ranged from H_ab = 0.23 to 0.70 cm^-1, indicative of nonadiabatic electron transfer. The reorganization energies, λ, were also sensitive to the sensitizer location within the electric double layer and were smaller, with one exception, for sensitizers bearing two dcb ligands λ = 0.40-0.55 eV relative to those with one λ = 0.63-0.66 eV, in agreement with dielectric continuum theory. Electron transfer from the oxide to the photoexcited sensitizer was observed when the diimine ligand was more easily reduced than the dcb ligand. Lateral self-exchange "hole hopping" electron transfer between surface-anchored sensitizers was found to be absent for sensitizers with two dcb ligands, while those with only one were found to hop with rates similar to those previously reported in the literature, k_hh = 47-89 μs^-1. Collectively, the kinetic data and analysis reveal that interfacial kinetics are highly sensitive to the surface orientation and sensitizers bearing two dcb ligands are most optimal for practical applications of DSSCs.

Reorganization Energies for Interfacial Electron Transfer across Phenylene Ethynylene Rigid-Rod Bridges

A family of three ruthenium bipyridyl rigid-rod compounds of the general form [Ru(bpy)₂(LL)](PF₆)₂ were anchored to mesoporous thin films of tin-doped indium oxide (ITO) nanocrystals. Here, LL is a 4-substituted 2,2-bipyridine (bpy) ligand with varying numbers of conjugated phenylenethynylene bridge units between the bipyridine ring and anchoring group consisting of a bis-carboxylated isophthalic group. The visible absorption spectra and the formal potentials, E^o(Ru^III/II), of the surface anchored rigid-rods were insensitive to the presence of the phenylene ethynylene bridge units in 0.1 M tetrabutyl ammonium perchlorate acetonitrile solutions (TBAClO₄/CH₃CN). The conductive nature of the ITO enabled potentiostatic control of the Fermi level and hence a means to tune the Gibbs free energy change, -ΔG^°, for electron transfer from the ITO to the rigid-rods. Pseudo-rate constants for this electron transfer reaction increased as the number of bridge units decreased at a fixed -ΔG^°. With the assumption that the reorganization energy, λ, and the electronic coupling matrix element, H_ab, were independent of the applied potential, rate constants measured as a function of -ΔG^° and analyzed through Marcus-Gerischer theory provided estimates of H_ab and λ. In rough accordance with the dielectric continuum theory, λ was found to increase from 0.61 to 0.80 eV as the number of bridge units was increased. In contrast, H_ab decreased markedly with distance from 0.54 to 0.11 cm^-1, consistent with non-adiabatic electron transfer. Comparative analysis with previously published studies of bridges with an sp³-hybridized carbon indicated that the phenylene ethynylene bridge does not enhance electronic coupling between the oxide and the rigid-rod acceptor. The implications of these findings for practical applications in solar energy conversion are specifically discussed.

Accessing Photoredox Transformations with an Iron(III) Photosensitizer and Green Light

Efficient excited-state electron transfer between an iron(III) photosensitizer and organic electron donors was realized with green light irradiation. This advance was enabled by the use of the previously reported iron photosensitizer, [Fe(phtmeimb)₂]⁺ (phtmeimb = {phenyl[tris(3-methyl-imidazolin-2-ylidene)]borate}, that exhibited long-lived and luminescent ligand-to-metal charge-transfer (LMCT) excited states. A benchmark dehalogenation reaction was investigated with yields that exceed 90% and an enhanced stability relative to the prototypical photosensitizer [Ru(bpy)₃]²⁺. The initial catalytic step is electron transfer from an amine to the photoexcited iron sensitizer, which is shown to occur with a large cage-escape yield. For LMCT excited states, this reductive electron transfer is vectorial and may be a general advantage of Fe(III) photosensitizers. In-depth time-resolved spectroscopic methods, including transient absorption characterization from the ultraviolet to the infrared regions, provided a quantitative description of the catalytic mechanism with associated rate constants and yields.

Mechanistic investigation of a visible light mediated dehalogenation/cyclisation reaction using iron(iii), iridium(iii) and ruthenium(ii) photosensitizers

The identification of reaction mechanisms unique to the iron, ruthenium, and iridium PS represents progress towards the long-sought goal of utilizing earth-abundant, first-row transition metals for emerging energy and environmental applications.

Solvent influence on non-adiabatic interfacial electron transfer at conductive oxide electrolyte interfaces

The kinetics for interfacial electron transfer (ET) from a transparent conductive oxide (tin-doped indium oxide, ITO, Sn:In₂O₃) to molecular acceptors 4-[N,N-di(p-tolyl)amino]benzylphosphonic acid, TPA, and [Ru^II(bpy)₂(4,4'-(PO₃H₂)₂-bpy)]²⁺, RuP, positioned at variable distances within and beyond the electric double layer (EDL), were quantified in benzonitrile and methanol by nanosecond absorption spectroscopy as a function of the thermodynamic driving force, -ΔG°. Relevant ET parameters such as the rate constant, k_et, reorganization energy, λ, and electronic coupling, H_ab, were extracted from the kinetic data. Overall, k_et increased as the distance between the molecular acceptor and the conductor decreased. For redox active molecules within the Helmholtz planes of the EDL, k_et was nearly independent of -ΔG°, consistent with a negligibly small λ value. Rips-Jortner analysis revealed a non-adiabatic electron transfer mechanism consistent with H_ab < 1 cm^-1. The data indicate that the barrier for electron transfer is greatly diminished at the conductor-electrolyte interface.

Kinetic Evidence That the Solvent Barrier for Electron Transfer Is Absent in the Electric Double Layer

Classical capacitance studies have revealed that the first layer of water present at an aqueous metal-electrolyte interface has a dielectric constant less than 1/10th of that of bulk water. Modern theory indicates that the barrier for electron transfer will decrease substantially in this layer; yet, this important prediction has not been tested experimentally. Here, we report the interfacial electron transfer kinetics for molecules positioned at variable distances within the electric double layer of a transparent conductive oxide as a function of the Gibbs free energy change. The data indicate that the solvent reorganization is indeed near zero and increases to bulk values only when the molecules are positioned greater than 15 Å from the conductive electrode. Consistent with this conclusion, lateral intermolecular electron transfer, parallel to a semiconducting oxide electrode, was shown to be more rapid when the molecules were within the electric double layer. The results provide much needed feedback for theoretical studies and also indicate a huge kinetic advantage for aqueous electron transfer and redox catalysis that takes place proximate to a solid interface.

Electron Transfer Reorganization Energies in the Electrode-Electrolyte Double Layer

The total reorganization energy, λ, for interfacial electron transfer, ET, from a conductive electrode to redox-active molecules at fixed positions within the electric double layer, EDL, has been determined experimentally. Conductive indium-tin-oxide (ITO, In₂O₃:Sn) mesoporous films were functionalized with 4-[N,N-di(p-tolyl)-amino]benzylphosphonic acid (TPA) and/or [Ru^II(bpy)₂(4,4'-(PO₃H₂)₂-bpy)]²⁺ (RuP), where bpy is 2,2'-bipyridine. The small inner-sphere reorganizations, λ_i, for Ru^III/IIP and TPA^+/0 make them excellent probes of outer-sphere reorganization energy, λ_o, as λ_i ≪ λ_o such that λ = λ_i + λ_o ≈ λ_o. Consecutive layer-by-layer addition of Zr^IV-bridged methylenediphosphonic acid enabled positioning at distances from 4 to 27 Å from the ITO. Excited-state injection into the ITO by RuP* generated ITO(e^-)|Ru^IIIP. For ITO cofunctionalized with TPA and RuP, subnanosecond lateral ET yielded ITO(e^-)|TPA⁺. The kinetics for ET from ITO to Ru^IIIP or TPA⁺ were quantified spectroscopically as a function of applied potential (E_app) and hence driving force, -ΔG°. Marcus-Gerischer analysis of this data provided λ. Significantly, λ_o was near zero at close electrode proximity, λ = 0.11 eV at a distance of ∼4 Å, as manifest by kinetics largely insensitive to E_app. In agreement with dielectric continuum theory, λ increased to values expected in CH₃CN solution when the molecule was positioned at a distance of ∼27 Å (λ = 0.94 eV). The data reveal small intrinsic barriers for electron transfer proximate to conductive interfaces, which is an exploitable behavior in solar energy conversion and other applications that utilize transparent conductive oxides to accept or deliver electrons.

Electron Localization and Transport in SnO2/TiO2 Mesoporous Thin Films: Evidence for a SnO2/SnxTi1-xO2/TiO2 Structure

A study of SnO₂/TiO₂ core/shell films was undertaken to investigate the influences of shell thickness and post deposition sintering on electron localization and transport properties. Electrochemical reduction of the materials resulted in the appearance of a broad visible-near IR absorbance that provided insights into the electronic state(s) within the core/shell structures. As the shell thickness was increased from 0.5 to 5 nm, evidence for the presence of a Sn_xTi_1-xO₂ interfacial state emerged that was physically located between the core and the shell. The lifetime of photoinjected electrons increased with the shell thickness. Electron transport occurred through the SnO₂ core; however, when materials with shell thicknesses ≥2 nm were annealed at 450 °C, a new electron transport pathway through the shell was evident. The data indicate that these materials are best described as SnO₂/Sn_xTi_1-xO₂/TiO₂ where electrons preferentially localize in a Sn_xTi_1-xO₂ interfacial state and transport through SnO₂ and annealed TiO₂ (if present). The implications of these results for applications in solar energy conversion are discussed.