Low Hydrogen Content, High Quality Hydrogenated Amorphous Silicon Grown by Hot-Wire CVD

We grow hydrogenated amorphous silicon (a-Si:H) by Hot-Wire Chemical Vapor Deposition (HWCVD). Our early work with this technique has shown that we can grow a-Si:H that is different from typical a-Si:H materials. Specifically, we demonstrated the ability to grow a-Si:H of exceptional quality with very low hydrogen (H) contents (0.01 to 4 at. %). The deposition chambers in which this early work was done have two limitations: they hold only small-area substrates and they are incompatible with a load-lock. In our efforts to scale up to larger area chambers—that have load-lock compatibility—we encountered difficulty in growing high-quality films that also have a low H content. Substrate temperature has a direct effect on the H content of HWCVD grown a-Si:H. We found that making dramatic changes to the other deposition process parameters—at fixed substrate temperature and filament-to-substrate spacing—did not have much effect on the H content of the resulting films in our new chambers. However, these changes did have profound effects on film quality. We can grow high-quality a-Si:H in the new larger area chambers at 4 at. % H. For example, the lowest known stabilized defect density of a-Si:H is approximately 2 × 1016 cm-3, which we have grown in our new chamber at 18 Å/s. Making changes to our original chamber—making it more like our new reactor—did not increase the hydrogen content at a fixed substrate temperature and filament-to-substrate spacing. We continued to grow high quality films with low H content in spite of these changes. An interesting, and very useful, result of these experiments is that the orientation of the filament with respect to silane flow direction had no influence on film quality or the H content of the films. The condition of the filament is much more important to growing quality films than the geometry of the chamber due to tungsten-silicide formation on the filament.

High thermal conductivity of a hydrogenated amorphous silicon film

We measured the thermal conductivity kappa of an 80 microm thick hydrogenated amorphous silicon film prepared by hot-wire chemical-vapor deposition with the 3omega (80-300 K) and the time-domain thermo-reflectance (300 K) methods. The kappa is higher than any of the previous temperature dependent measurements and shows a strong phonon mean free path dependence. We also applied a Kubo based theory using a tight-binding method on three 1000 atom continuous random network models. The theory gives higher kappa for more ordered models, but not high enough to explain our results, even after extrapolating to lower frequencies with a Boltzmann approach. Our results show that this material is more ordered than any amorphous silicon previously studied.

Bistability-mediated carrier recombination at light-induced boron-oxygen complexes in silicon

A first-principles study of the BO2 complex in B-doped Czochralski Si reveals a defect-bistability-mediated carrier recombination mechanism, which contrasts with the standard fixed-level Shockley-Read-Hall model of recombination. An O2 dimer distant from B causes only weak carrier recombination, which nevertheless drives O2 diffusion under light to form the BO2 complex. Although BO2 and O2 produce nearly identical defect levels in the band gap, the recombination at BO2 is substantially faster than at O2 because the charge state of the latter inhibits the hole capture step of recombination.

Labial agglutination secondary to a herpes simplex II infection

A case is described of a young woman with labial agglutination secondary to a herpes simplex II infection that was successfully treated with laser vaporization.

Gravitational Compression of Crystallized Suspensions of Polystyrene Spheres

In a crystallized suspension of polystyrene spheres, the earth's gravitational field, acting on a vertical column of material several centimeters high, produces an elastic deformation that can be readily observed through its effect on the crystal lattice constant. This effect has been used to determine that Young's modulus for the crystalline material ranges from 1 to 3 dynes per square centimeter, depending on the concentration of spheres.