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Barr MKS, Nadiri S, Chen DH, Weidler PG, Bochmann S, Baumgart H, Bachmann J, Redel E. Solution Atomic Layer Deposition of Smooth, Continuous, Crystalline Metal-Organic Framework Thin Films. Chem Mater 2022; 34:9836-9843. [PMID: 36439317 PMCID: PMC9686130 DOI: 10.1021/acs.chemmater.2c01102] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Grants] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 04/11/2022] [Revised: 09/14/2022] [Indexed: 06/16/2023]
Abstract
For the first time, a procedure has been established for the growth of surface-anchored metal-organic framework (SURMOF) copper(II) benzene-1,4-dicarboxylate (Cu-BDC) thin films of thickness control with single molecule accuracy. For this, we exploit the novel method solution atomic layer deposition (sALD). The sALD growth rate has been determined at 4.5 Å per cycle. The compact and dense SURMOF films grown at room temperature by sALD possess a vastly superior film thickness uniformity than those deposited by conventional solution-based techniques, such as dipping and spraying while featuring clear crystallinity from 100 nm thickness. The highly controlled layer-by-layer growth mechanism of sALD proves crucial to prevent unwanted side reactions such as Ostwald ripening or detrimental island growth, ensuring continuous Cu-BDC film coverage. This successful demonstration of sALD-grown compact continuous Cu-BDC SURMOF films is a paradigm change and provides a key advancement enabling a multitude of applications that require continuous and ultrathin coatings while maintaining tight film thickness specifications, which were previously unattainable with conventional solution-based growth methods.
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Affiliation(s)
- Maïssa K. S. Barr
- Friedrich-Alexander-Universität
Erlangen-Nürnberg, Chair Chemistry of Thin Film Materials,
IZNF, Cauerstr. 3, 91058 Erlangen, Germany
| | - Soheila Nadiri
- Friedrich-Alexander-Universität
Erlangen-Nürnberg, Chair Chemistry of Thin Film Materials,
IZNF, Cauerstr. 3, 91058 Erlangen, Germany
| | - Dong-Hui Chen
- Karlsruhe
Institute of Technology, Institute of Functional Interfaces (IFG), Hermann-von-Helmholtz-Platz 1, 76344 Eggenstein-Leopoldshafen, Germany
| | - Peter G. Weidler
- Karlsruhe
Institute of Technology, Institute of Functional Interfaces (IFG), Hermann-von-Helmholtz-Platz 1, 76344 Eggenstein-Leopoldshafen, Germany
| | - Sebastian Bochmann
- Friedrich-Alexander-Universität
Erlangen-Nürnberg, Chair Chemistry of Thin Film Materials,
IZNF, Cauerstr. 3, 91058 Erlangen, Germany
| | - Helmut Baumgart
- Department
of Electrical and Computer Engineering, Old Dominion University, Norfolk, Virginia 23529, United States
- Applied
Research Center at Jefferson Labs, Newport News, Virginia 23606, United States
| | - Julien Bachmann
- Friedrich-Alexander-Universität
Erlangen-Nürnberg, Chair Chemistry of Thin Film Materials,
IZNF, Cauerstr. 3, 91058 Erlangen, Germany
| | - Engelbert Redel
- Karlsruhe
Institute of Technology, Institute of Functional Interfaces (IFG), Hermann-von-Helmholtz-Platz 1, 76344 Eggenstein-Leopoldshafen, Germany
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