Tuning the length/width aspect ratio of epitaxial unidirectional silicide nanowires on Si(110)-16 × 2 surfaces

The reactive deposition epitaxy growth of self-organized cobalt silicide nanowires (NWs) on clean Si(110) surfaces has been investigated by in situ scanning tunneling microscopy (STM) and scanning tunneling spectroscopy (STS) as well as by scanning electron microscopy (SEM). Half a monolayer of cobalt was deposited on the Si(110) surfaces at ∼600 °C substrate temperature. Following cobalt deposition, the substrates have been annealed for different durations. Cobalt forms aligned cobalt disilicide nanowires upon reaction with the silicon substrate, following the twofold substrate symmetry. With increasing duration of annealing, the NWs have been found to grow with larger aspect ratio (length/width), eventually producing narrower NWs. These self-organized unidirectional NWs of sub-hundred nanometer width and ∼4–7 nm height produce a Schottky barrier with the silicon substrate and are expected to find applications in nanoelectronic devices.

White-light emission by phonon assisted coherent mixing of excitons in Au8-CdS hybrid nanorods

Gold cluster (Au₈) coated CdS hybrid nanorods (HNRs), synthesized using a sonication assisted assembly route, exhibit phonon assisted coherent mixing of excitons. As observed from optical absorption, Raman scattering, x-ray diffraction and transmission electron microscopic studies, the Au₈ modulates the crystal-and electronic-structure of the CdS nanorods, effecting enhancement of exciton-phonon (e-p) interactions. The e-p interaction and entropy effect mediated phase matching of the excitonic transitions, leading-via cooperative and coherent mixing of the excitons' color-to the emission of white light, has been confirmed from room temperature and time resolved photoluminescence measurements.