Resonant Raman scattering of ZnSxSe1−x solid solutions: the role of S and Se electronic states

A combined theoretical and experimental study of the enhancement in the Raman mode intensities of ZnSSe compounds, under various resonant conditions, is presented, leading to more detailed insights into the role of chalcogen electronic states in the photon–matter interaction.

Raman scattering quantitative assessment of the anion composition ratio in Zn(O,S) layers for Cd-free chalcogenide-based solar cells

This work reports the use of Raman scattering for the chemical characterization of Zn(O,S) layers that are being developed as a Cd-free alternative for the buffer layer in advanced chalcogenide solar cells.

Optical phonons in the kesterite Cu2ZnGeS4 semiconductor: polarized Raman spectroscopy and first-principle calculations

A comprehensive vibrational analysis of the kesterite Cu₂ZnGeS₄ is reported, which includes in-plane rotation polarized Raman scattering measurements from the (1 0 1)-single crystal facet as well as first principle lattice dynamic calculations.

Optical properties of quaternary kesterite-type Cu2Zn(Sn1−xGex)S4 crystalline alloys: Raman scattering, photoluminescence and first-principle calculations

The transformation of the vibrational spectrum of Cu₂Zn(Sn_1−xGe_x)S₄ single crystals over the entire composition range (0 ≤ x ≤ 1) is studied experimentally as well as theoretically.

Comprehensive comparison of various techniques for the analysis of elemental distributions in thin films

The present work shows results on elemental distribution analyses in Cu(In,Ga)Se2 thin films for solar cells performed by use of wavelength-dispersive and energy-dispersive X-ray spectrometry (EDX) in a scanning electron microscope, EDX in a transmission electron microscope, X-ray photoelectron, angle-dependent soft X-ray emission, secondary ion-mass (SIMS), time-of-flight SIMS, sputtered neutral mass, glow-discharge optical emission and glow-discharge mass, Auger electron, and Rutherford backscattering spectrometry, by use of scanning Auger electron microscopy, Raman depth profiling, and Raman mapping, as well as by use of elastic recoil detection analysis, grazing-incidence X-ray and electron backscatter diffraction, and grazing-incidence X-ray fluorescence analysis. The Cu(In,Ga)Se2 thin films used for the present comparison were produced during the same identical deposition run and exhibit thicknesses of about 2 μm. The analysis techniques were compared with respect to their spatial and depth resolutions, measuring speeds, availabilities, and detection limits.