Understanding the Copassivation Effect of Cl and Se for CdTe Grain Boundaries

Chlorine passivation treatment of cadmium telluride (CdTe) solar cells improves device performance by assisting electron-hole carrier separation at CdTe grain boundaries. Further improvement in device efficiency is observed after alloying the CdTe absorber layer with selenium. High-resolution secondary ion mass spectroscopy (NanoSIMS) imaging has been used to determine the distribution of selenium and chlorine at the CdTe grain boundaries in a selenium-graded CdTe device. Atomistic modeling based on density functional theory (DFT-1/2) further reveals that the presence of selenium and chlorine at an exemplar (110)/(100) CdTe grain boundary passivates critical acceptor defects and leads to n-type inversion at the grain boundary. The defect state analysis provides an explanation for the band-bending effects observed in the energy band alignment results, thereby elucidating mechanisms for high efficiencies observed in Se-alloyed and Cl-passivated CdTe solar cells.

Characterization of Sulfur Bonding in CdS:O Buffer Layers for CdTe-based Thin-Film Solar Cells

On the basis of a combination of X-ray photoelectron spectroscopy and synchrotron-based X-ray emission spectroscopy, we present a detailed characterization of the chemical structure of CdS:O thin films that can be employed as a substitute for CdS layers in thin-film solar cells. It is possible to analyze the local chemical environment of the probed elements, in particular sulfur, hence allowing insights into the species-specific composition of the films and their surfaces. A detailed quantification of the observed sulfur environments (i.e., sulfide, sulfate, and an intermediate oxide) as a function of oxygen content is presented, allowing a deliberate optimization of CdS:O thin films for their use as alternative buffer layers in thin-film photovoltaic devices.

Cadmium Chloride Assisted Re-Crystallisation of CdTe: The Effect on the CdS Window Layer

The cadmium chloride annealing treatment is an essential step in the manufacture of efficient thin film CdTe solar cells. In previous work we have shown that the primary effect of the treatment is to remove high densities of stacking faults from the as-deposited material. Use of density functional theory has shown that some of the higher energy stacking faults are hole traps. Removal of these defects dramatically improves cell efficiency. In this study we focus on the effect of the activation treatment on the underlying n-type cadmium sulphide layer. A range of techniques has been used to observe the changes to the microstructure as well as the chemical and crystallographic changes as a function of treatment parameters. Electrical tests that link the device performance with the micro-structural properties of the cells have also been undertaken. Techniques used include High Resolution Transmission Electron Microscopy (HRTEM) for sub-grain analysis, EDX for chemical analysis and XPS and SIMS for composition-depth profiling. By studying the effect of increasing the treatment time and temperature, we will show that the cadmium sulphide layer depletes to the point of complete dissolution into the absorber layer. We will also show that chlorine penetrates and decorates the grain boundaries in the cadmium sulphide. In addition we will show that chlorine builds up at the heterojunction and concentrates in voids at the cadmium telluride/cadmium sulphide interface. A combination of these effects damages the electrical performance of the solar cell.