175 nm period grating fabricated by i-line proximity mask-aligner lithography

We report the fabrication of periodic structures with a critical dimension of 90 nm on a fused silica substrate by i-line (λ=365  nm) proximity mask-aligner lithography. This realization results from the combination of the improvements of the optical system in the mask aligner (known as MO exposure optics), short-period phase-mask optimization, and the implementation of self-aligned double patterning (SADP). A 350 nm period grating is transferred into a sacrificial polymer layer and coated with an aluminum layer. The removal of the metal initially present on the horizontal surfaces and on top of the polymer grating leaves a 175 nm period grating on the wafer, which can be used as a wire grid polarizer. A computation of the efficiency is performed from the measured profile and confirms the deep-blue visible to infra-red operation range.

Mask aligner lithography using laser illumination for versatile pattern generation

Mask aligner lithography is a well-established back-end fabrication process in microlithography. Within the last few years, resolution enhancement techniques have been transferred and adapted from projection lithography to further develop mask aligner lithography, especially concerning achievable resolution. Nonetheless, current technology using a mercury vapor lamp as a light source has reached its limits, e.g. for high-resolution pattering. Within this paper, we present the extension of the existing mask aligner illumination system by replacing the mercury vapor lamp with a solid-state laser. Full-field mask aligner lithography is guaranteed by a rotating diffuser expanding the laser beam and minimizing undesired speckle effects. An additional integrated galvanometer scanner allows a flexible choice of arbitrary angular spectrum distributions of the photomask illumination. We show versatile results like simple binary patterns of squares and triangles, as well as a more complex lateral shape like a blazed grating.

Double-sided structured mask for sub-micron resolution proximity i-line mask-aligner lithography

Diffractive mask-aligner lithography allows printing structures that have a sub-micrometer resolution by using non-contact mode. For such a purpose, masks are often designed to operate with monochromatic linearly polarized light, which is obtained by placing a spectral filter and a polarizer in the beam path. We propose here a mask design that includes a wire-grid polarizer (WGP) on the top side of a photo-mask and a diffractive element on the bottom one to print a 350 nm period grating by using a classical mask-aligner in proximity exposure mode. Linearly polarizing locally an unpolarized incident beam is only possible by using a WGP on the top side of the mask. This configuration opens the possibility to use different linear polarization orientation on a single mask and allows to print high resolution structures with different orientation within one exposure.

250 nm period grating transferred by proximity i-line mask-aligner lithography

This Letter, describes a fabrication method based on a high refractive index binary phase mask combined with a suitable illumination setup, which produces a close to normal incidence illumination, to fabricate sub-micrometer diffraction gratings. The method uses the i-line (365 nm) of a mercury lamp spectrum in a mask-aligner in proximity mode, to avoid any contact between the mask and the wafer, which is normally used to produce high resolution structures. The transfer of the structure in a fused silica wafer demonstrates that mask-aligner lithography can produce high aspect ratio sub-wavelength structures without resorting to any contact between mask and wafer.

Direct nanopatterning of 100 nm metal oxide periodic structures by Deep-UV immersion lithography

Deep-UV lithography using high-efficiency phase mask has been developed to print 100 nm period grating on sol-gel based thin layer. High efficiency phase mask has been designed to produce a high-contrast interferogram (periodic fringes) under water immersion conditions for 244 nm laser. The demonstration has been applied to a new developed immersion-compatible sol-gel layer. A sol-gel photoresist prepared from zirconium alkoxides caped with methacrylic acids was developed to achieve 50 nm resolution in a single step exposure. The nanostructures can be thermally annealed into ZrO(2). Such route considerably simplifies the process for elaborating nanopatterned surfaces of transition metal oxides, and opens new routes for integrating materials of interest for applications in the field of photocatalysis, photovoltaic, optics, photonics or microelectronics.

100 nm period grating by high-index phase-mask immersion lithography

The interferogram of a high index phase mask of 200 nm period under normal incidence of a collimated beam at 244 nm wavelength with substantially suppressed zeroth order produces a 100 nm period grating in a resist film under immersion. The paper describes the phase mask design, its fabrication, the effect of electron-beam lithographic stitching errors and optical assessment of the fabricated sub-cutoff grating.

Monolithic double-grating phase mask for large-period highly coherent grating printing

A monolithic double-grating phase mask comprising three short-pitch grating sections of spatial frequencies k(1) and k(2) collocated at one side of a substrate produces a large-period interferogram without higher harmonics to print in a photoresist film a latent grating of small spatial frequency equal to twice k(2)-k(1). When incorporated in a write-on-the-fly scheme, the elements permit the fabrication of unlimitedly long gratings.

[Chronic venous insufficiency 7 to 10 years after partial vena cava interruption with a clip]

In order to test the responsibility of inferior vena cava clips in post thrombotic venous disease, we performed a comparative retrospective study 7 to 10 years after vena cava interruption by clip. Patients were compared with patients matched for sex, age, and prior deep vein thrombosis (same period and same localisation) but without inferior vena cava partial interruption. The results show that 1) functional complaints were significantly higher in the vena cava clip group; 2) valvular incompetency, in the initially thrombosed leg, (tested by scanning duplex) was not different in the two groups: 3) inversely, on the other leg, valvular incompetency was greater in the vena cava clip group. Furthermore this valvular incompetency was principally located at a femoral level, suggesting that the vena cava clip may induce backward thrombosis; 4) complications were independent of vena cava thrombosis.