Unravelling the Role of Free Radicals in Photocatalysis

Free radicals are increasingly recognized as active intermediate reactive species that can participate in various redox processes, significantly influencing the mechanistic pathways of reactions. Numerous researchers have investigated the generation of one or more distinct photogenerated radicals, proposing various hypotheses to explain the reaction mechanisms. Notably, recent research has demonstrated the emergence of photogenerated radicals in innovative processes, including organic chemical reactions and the photocatalytic dissolution of precious metals. To harness the potential of these free radicals more effectively, it is imperative to consolidate and analyze the processes and action modes of these photogenerated radicals. This conceptual paper delves into the latest advancements in understanding the mechanics of photogenerated radicals.

High Thermoelectric Power Factors in Plastic/Ductile Bulk SnSe2 -Based Crystals

The recently discovered plastic/ductile inorganic thermoelectric (TE) materials open a new avenue for the fabrication of high-efficiently flexible TE devices, which can utilize the small temperature difference between human body and environment to generate electricity. However, the maximum power factor (PF) of current plastic/ductile TE materials is usually around or less than 10 µW cm-1 K-2 , much lower than the classic brittle TE materials. In this work, a record-high PF of 18.0 µW cm-1 K-2 at 375 K in plastic/ductile bulk SnSe2 -based crystals is reported, superior to all the plastic inorganic TE materials and flexible organic TE materials reported before. The origin of such high PF is from the modulation of material's stacking forms and polymorph crystal structures via simultaneously doping Cl/Br at Se-site and intercalating Cu inside the van der Waals gap, leading to the significantly enhanced carrier concentrations and mobilities. An in-plane fully flexible TE device made of the plastic/ductile SnSe2 -based crystals is successfully developed to show a record-high normalized maximum power density to 0.18 W m-1 under a temperature difference of 30 K. This work indicates that the plastic/ductile material can realize high TE power factor to achieve large output electric power density in flexible TE technology.

High-Throughput Strategies in the Discovery of Thermoelectric Materials

Searching for new high-performance thermoelectric (TE) materials that are economical and environmentally friendly is an urgent task for TE society, but the advancements are greatly limited by the time-consuming and high cost of the traditional trial-and-error method. The significant progress achieved in the computing hardware, efficient computing methods, advance artificial intelligence algorithms, and rapidly growing material data have brought a paradigm shift in the investigation of TE materials. Many electrical and thermal performance descriptors are proposed and efficient high-throughput (HTP) calculation methods are developed with the purpose to quickly screen new potential TE materials from the material databases. Some HTP experiment methods are also developed which can increase the density of information obtained in a single experiment with less time and lower cost. In addition, machine learning (ML) methods are also introduced in thermoelectrics. In this review, the HTP strategies in the discovery of TE materials are systematically summarized. The applications of performance descriptor, HTP calculation, HTP experiment, and ML in the discovery of new TE materials are reviewed. In addition, the challenges and possible directions in future research are also discussed.

Intrinsically Low Thermal Conductivity in a Novel Cu-S Modified ZrS2 Compound with Asymmetric Bonding

Materials with low thermal conductivity have received significant attention across various research fields, including thermal insulation materials, thermal barrier coatings, and thermoelectric materials. Exploring novel materials with intrinsically low thermal conductivity and investigating their phonon transport properties, chemical bonding, and atomic coordination are crucial. In this study, a novel ternary sulfide is successfully discovered, Cu2 ZrS3 , which is achieved by introducing copper ions into both the interlayer and intralayer of ZrS2 . The resulting structure encompasses various coordination forms within each layer, such as [CuS4 ], [ZrS6 ], and [CuS3 ], leading to pronounced phonon anharmonicity induced by the asymmetric bonding of tri-coordinated Cu atoms within the [ZrS6 ] layer. As a result, Cu2 ZrS3 exhibits intrinsically low lattice thermal conductivity (κL ) of about 0.83 W m-1 K-1 at 300 K and 0.35 W m-1 K-1 at 683 K, which are in the exceptionally low level among sulfides. In comparison to the conventional approach of inserting guests between layers, the substitution of atoms within layers provides a novel and effective strategy for designing low κL materials in transition metal dichalcogenides (TMDCs).

Inhibiting Interfacial Diffusion in Heterojunction Perovskite Solar Cells by Replacing Low-Dimensional Perovskite with Uniformly Anchored Quaternized Polystyrene

Surface heterojunction has been regarded as an effective method to improve the device efficiency of perovskite solar cells. Nevertheless, the durability of different heterojunction under thermal stress is rarely investigated and compared. In this work, benzylammonium chloride and benzyltrimethylammonium chloride are utilized to construct 3D/2D and 3D/1D heterojunctions, respectively. A quaternized polystyrene is synthesized to construct a three-dimensional perovskite/amorphous ionic polymer (3D/AIP) heterojunction. Due to the migration and volatility of organic cations, severe interfacial diffusion is found among 3D/2D and 3D/1D heterojunctions, in which the quaternary ammonium cations in the 1D structure are less volatile and mobile than the primary ammonium cations in the 2D structure. 3D/AIP heterojunction remains intact under thermal stress due to the strong ionic bond anchoring at the interface and the ultra-high molecular weight of AIP. Furthermore, the dipole layer formed by AIP can further reduce the voltage loss caused by nonradiative recombination at the interface by 0.088 V. Therefore, the devices based on the 3D/AIP heterojunction achieve a champion power conversion efficiency of 24.27% and maintain 90% of its initial efficiency after either thermal aging for 400 h or wet aging for 3000 h, showing a great promise for polymer/perovskite heterojunction towards real applications.

Incommensurately Modulated Structure in AgCuSe-Based Thermoelectric Materials for Intriguing Electrical, Thermal, and Mechanical Properties

AgCuSe-based materials have attracted great attentions recently in thermoelectric (TE) field due to their extremely high electron mobility, ultralow lattice thermal conductivity, and abnormal "brittle-ductile" transition at room temperature. However, although the investigation on the crystal structure of AgCuSe low-temperature phase (named as β-AgCuSe) was started more than half a century before, it is still in controversy yet, which greatly limits the understanding of its intriguing electrical, thermal, and mechanical performance. In this work, via adopting the advanced three-dimensional electron diffraction technique, this study finds that the AgCuSe-based materials crystalize in an incommensurately modulated structure with an orthorhombic Pmmn(0β1/2)s00 superspace group. The local lattice distortion in the incommensurately modulated structure has weak effects on the conduction band minimum due to the delocalized and isotropic feature of Ag 5s states, leading to high carrier mobility. Likewise, the inhomogeneous, weak, and anisotropic Ag-Se bonds result in the high degree of anharmonicity and ultralow lattice thermal conductivity. Furthermore, alloying S in AgCuSe reinforces the interaction between the adjacent Ag-Se layers, yielding the "brittle-ductile" transition at room temperature. This work well interprets the structure-performance relationship of AgCuSe-based materials and sheds light on the future investigation of this class of promising TE materials.

Tailoring the Asymmetric Structure of NH2 -UiO-66 Metal-Organic Frameworks for Light-promoted Selective and Efficient Gold Extraction and Separation

Designing adsorption materials with high adsorption capacities and selectivities is highly desirable for precious metal recovery. Desorption performance is also particularly crucial for subsequent precious metal recovery and adsorbent regeneration. Herein, a metal-organic framework (MOF) material (NH₂ -UiO-66) with an asymmetric electronic structure of the central zirconium oxygen cluster has an exceptional gold extraction capacity of 2.04 g g^-1 under light irradiation. The selectivity of NH₂ -UiO-66 for gold ions is up to 98.8 % in the presence of interfering ions. Interestingly, the gold ions adsorbed on the surface of NH₂ -UiO-66 spontaneously reduce in situ, undergo nucleation and growth and finally achieve the phase separation of high-purity gold particles from NH₂ -UiO-66. The desorption and separation efficiency of gold particles from the adsorbent surface reaches 89 %. Theoretical calculations indicate that -NH₂ functions as a dual donor of electrons and protons, and the asymmetric structure of NH₂ -UiO-66 leads to energetically advantageous multinuclear gold capture and desorption. This adsorption material can greatly facilitate the recovery of gold from wastewater and can easily realize the recycling of the adsorbent.

High Performance Full-Inorganic Flexible Memristor with Combined Resistance-Switching

Flexible memristors hold great promise for flexible electronics applications but are still lacking of good electrical performance together with mechanical flexibility. Herein, we demonstrate a full-inorganic nanoscale flexible memristor by using free-standing ductile α-Ag₂S films as both a flexible substrate and a functional electrolyte. The device accesses dense multiple-level nonvolatile states with a record high 10⁶ ON/OFF ratio. This exceptional memristor performance is induced by sequential processes of Schottky barrier modification at the contact interface and filament formation inside the electrolyte. In addition, it is crucial to ensure that the cathode junction, where Ag⁺ is reduced to Ag, dominates the total resistance and takes the most of setting bias before the filament formation. Our study provides a comprehensive insight into the resistance-switching mechanism in conductive-bridging memristors and offers a new strategy toward high performance flexible memristors.