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Hou W, Yang M, Guo Y, Ma Y, Guo M, Xiao Y, Han G. Synergistic effects of caesium closo-dodecaborate on buried interface for efficient and stable perovskite solar cells. J Colloid Interface Sci 2023; 645:472-482. [PMID: 37156156 DOI: 10.1016/j.jcis.2023.04.171] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 02/13/2023] [Revised: 04/25/2023] [Accepted: 04/30/2023] [Indexed: 05/10/2023]
Abstract
The defects and strain of the buried SnO2/perovskite interface seriously affects the performances of n-i-p type perovskite solar cells. Herein, caesium closo-dodecaborate (B12H12Cs2) is introduced into buried interface to improve the device performances. B12H12Cs2 can passivate the bilateral defects of the buried interface, including the oxygen vacancy and uncoordinated Sn2+ defects on SnO2 side and the uncoordinated Pb2+ defects on perovskite side. Three-dimensional aromatic B12H12Cs2 can promote the interface charge transfer and extraction. [B12H12]2- can enhance the interface connection of buried interface by forming B-H---H-N dihydrogen bond and coordination bonds with metal ions. Meanwhile, the crystal properties of perovskite films can be improved and the buried tensile strain can be released by B12H12Cs2 due to the matched lattice between B12H12Cs2 and perovskite. In addition, Cs+ can diffuse into perovskite to reduce the hysteresis behavior by inhibiting the I- migration. Arising from the enhanced connection performances, passivated defects, improved perovskite crystallization, enhanced charge extraction, inhibited ions migration, released tensile strain at buried interface by B12H12Cs2, the corresponding devices yield a champion power conversion efficiency of 22.10% with enhanced stability. The stability of devices by B12H12Cs2 modification have been improved, and it can still maintain 72.5% of the original efficiency after 1440 h, while the control devices can only maintain 20% of the original efficiency after aging in air condition of 20-30% RH.
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Affiliation(s)
- Wenjing Hou
- Institute of Molecular Science, Key Laboratory of Chemical Biology and Molecular Engineering of Education Ministry, Key Laboratory of Materials for Energy Conversion and Storage of Shanxi Province, State Key Laboratory of Quantum Optics and Quantum Optics Devices, Shanxi University, Taiyuan 030006, PR China.
| | - Meiling Yang
- Institute of Molecular Science, Key Laboratory of Chemical Biology and Molecular Engineering of Education Ministry, Key Laboratory of Materials for Energy Conversion and Storage of Shanxi Province, State Key Laboratory of Quantum Optics and Quantum Optics Devices, Shanxi University, Taiyuan 030006, PR China
| | - Yao Guo
- School of Materials Science and Engineering, Henan Joint International Research Laboratory of Nanocomposite Sensing Materials, Anyang Institute of Technology, Anyang 455000, PR China.
| | - Yuting Ma
- Institute of Molecular Science, Key Laboratory of Chemical Biology and Molecular Engineering of Education Ministry, Key Laboratory of Materials for Energy Conversion and Storage of Shanxi Province, State Key Laboratory of Quantum Optics and Quantum Optics Devices, Shanxi University, Taiyuan 030006, PR China
| | - Mengna Guo
- Institute of Molecular Science, Key Laboratory of Chemical Biology and Molecular Engineering of Education Ministry, Key Laboratory of Materials for Energy Conversion and Storage of Shanxi Province, State Key Laboratory of Quantum Optics and Quantum Optics Devices, Shanxi University, Taiyuan 030006, PR China
| | - Yaoming Xiao
- College of Chemical Engineering and Materials Science, Quanzhou Normal University, Quanzhou 362000, PR China
| | - Gaoyi Han
- Institute of Molecular Science, Key Laboratory of Chemical Biology and Molecular Engineering of Education Ministry, Key Laboratory of Materials for Energy Conversion and Storage of Shanxi Province, State Key Laboratory of Quantum Optics and Quantum Optics Devices, Shanxi University, Taiyuan 030006, PR China.
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