Apoplast utilisation of nanohaematite initiates parallel suppression of RIBA1 and FRO1&3 in Cucumis sativus

Nanoscale Fe containing particles can penetrate the root apoplast. Nevertheless, cell wall size exclusion questions that for Fe mobilisation, a close contact between the membrane integrating FERRIC REDUCTASE OXIDASE (FRO) enzymes and Fe containing particles is required. Haematite nanoparticle suspension, size of 10-20 nm, characterized by ⁵⁷Fe Mössbauer spectroscopy, TEM, ICP and SAED was subjected to Fe utilisation by the flavin secreting model plant cucumber (Cucumis sativus). Alterations in the structure and distribution of the particles were revealed by ⁵⁷Fe Mössbauer spectroscopy, HRTEM and EDS element mapping. Biological utilisation of Fe resulted in a suppression of Fe deficiency responses (expression of CsFRO 1, 2 & 3 and RIBOFLAVIN A1; CsRIBA1 genes and root ferric chelate reductase activity). Haematite nanoparticles were stacked in the middle lamella of the apoplast. Fe mobilisation is evidenced by the reduction in the particle size. Fe release from nanoparticles does not require a contact with the plasma membrane. Parallel suppression in the CsFRO 1&3 and CsRIBA1 transcript amounts support that flavin biosynthesis is an inclusive Fe deficiency response involved in the reduction-based Fe utilisation of Cucumis sativus roots. CsFRO2 is suggested to play a role in the intracellular Fe homeostasis.

Lattice contrast in the core-loss EFTEM signal of graphene

The realization of chromatic aberration correction enables energy-filtered transmission electron microscopy (EFTEM) at atomic resolution even for large energy windows. Previous works have demonstrated lattice contrast from ionization-edge signals such as the L_2,3 edges of silicon or titanium. However, the direct interpretation as chemical information was found to be hampered by contributions from elastic contrast with dynamic scattering, especially for thick samples. Here we demonstrate that even for thin samples with light atoms, the interpretation of the ionization-edge signal is complicated by inversions from bright-atom to dark-atom contrast. Our EFTEM experiments for graphene show lattice contrast in the carbon K-edge signal, and we find bright-atom and dark-atom contrast for different defoci.

Element Mapping in Single-Atom-Width Platinum-Iridium Wires

Single-atom-width wires (SAWWs) of platinum-iridium (PtIr) alloy were produced by mechanical breaking inside a transmission electron microscope. The formation dynamics, the atomic configuration, and the conductance were observed in situ. From the observed lattice images of the SAWWs and image simulation, the structure models, i.e., the configurations of atom position and element allocation, were constructed. Using the experiment-based structural models, the first-principle calculation of the conductance was performed. The atomic configuration and element allocation of the observed SAWWs were identified via the combination of the lattice imaging and calculation. The conductance of PtIr SAWWs changed in complexity for different element allocation in addition to the wire length and the configuration of the constituent atoms, which was difficult to presage from the conductance features of pure metal SAWWs. The present study revealed that the conductance of alloy SAWWs can be controlled by element allocation.

Transmission electron microscopy investigations of the microstructures in rapidly solidified Mg-Sn ribbons

Ribbons of an Mg-9.76 wt.%Sn alloy have been fabricated using rapid solidification technology. X-ray diffraction and transmission electron microscopy confirm that the rapidly solidified ribbons consist of α-Mg, β-Mg₂Sn and β^″-Mg₃Sn phases. The α-Mg grains are refined in the ribbons. The predominant fraction of the β-Mg₂Sn phase distributes at the grain boundaries of the α-Mg grains. The minor fraction of the β-Mg₂Sn phase reveals a spherical morphology with a typical grain size of 170 nm. The orientation relationship between the β^″-Mg₃Sn particles and α -Mg matrix is identified in the ribbons and an atomic structure model of the β^″-Mg₃Sn phase is proposed.

Determination of atomic-scale chemical composition at semiconductor heteroepitaxial interfaces by high-resolution transmission electron microscopy

The determination of atomic structures and further quantitative information such as chemical compositions at atomic scale for semiconductor defects or heteroepitaxial interfaces can provide direct evidence to understand their formation, modification, and/or effects on the properties of semiconductor films. The commonly used method, high-resolution transmission electron microscopy (HRTEM), suffers from difficulty in acquiring images that correctly show the crystal structure at atomic resolution, because of the limitation in microscope resolution or deviation from the Scherzer-defocus conditions. In this study, an image processing method, image deconvolution, was used to achieve atomic-resolution (∼1.0 Å) structure images of small lattice-mismatch (∼1.0%) AlN/6H-SiC (0001) and large lattice-mismatch (∼8.5%) AlSb/GaAs (001) heteroepitaxial interfaces using simulated HRTEM images of a conventional 300-kV field-emission-gun transmission electron microscope under non-Scherzer-defocus conditions. Then, atomic-scale chemical compositions at the interface were determined for the atomic intermixing and Lomer dislocation with an atomic step by analyzing the deconvoluted image contrast. Furthermore, the effect of dynamical scattering on contrast analysis was also evaluated for differently weighted atomic columns in the compositions.

Applicability of non-linear imaging in high-resolution transmission electron microscopy

According to transmission cross-coefficient theory, the information limit of non-linear imaging in high-resolution transmission electron microscopy is, under certain conditions, far beyond that of linear imaging, which suggests the possibility of using high-frequency information for structural determination. In this article, we studied the information beyond the linear information limit by means of multislice method simulation, with AlN as an example, and more structural information was obtained by using part of the high-frequency information.

Bismuth Quantum Dots in Annealed GaAsBi/AlAs Quantum Wells

Formation of bismuth nanocrystals in GaAsBi layers grown by molecular beam epitaxy at 330 °C substrate temperature and post-growth annealed at 750 °C is reported. Superlattices containing alternating 10 nm-thick GaAsBi and AlAs layers were grown on semi-insulating GaAs substrate. AlAs layers have served as diffusion barriers for Bi atoms, and the size of the nanoclusters which nucleated after sample annealing was correlating with the thickness of the bismide layers. Energy-dispersive spectroscopy and Raman scattering measurements have evidenced that the nanoparticles predominantly constituted from Bi atoms. Strong photoluminescence signal with photon wavelengths ranging from 1.3 to 1.7 μm was observed after annealing; its amplitude was scaling-up with the increased number of the GaAsBi layers. The observed photoluminescence band can be due to emission from Bi nanocrystals. The carried out theoretical estimates support the assumption. They show that due to the quantum size effect, the Bi nanoparticles experience a transition to the direct-bandgap semiconducting state.

Accuracy of surface strain measurements from transmission electron microscopy images of nanoparticles

Strain analysis from high-resolution transmission electron microscopy (HRTEM) images offers a convenient tool for measuring strain in materials at the atomic scale. In this paper we present a theoretical study of the precision and accuracy of surface strain measurements directly from aberration-corrected HRTEM images. We examine the influence of defocus, crystal tilt and noise, and find that absolute errors of at least 1–2% strain should be expected. The model structures include surface relaxations determined using molecular dynamics, and we show that this is important for correctly evaluating the errors introduced by image aberrations.

Atomic resolution imaging of YAlO3: Ce in the chromatic and spherical aberration corrected PICO electron microscope

The application of combined chromatic and spherical aberration correction in high-resolution transmission electron microscopy enables a significant improvement of the spatial resolution down to 50 pm. We demonstrate that such a resolution can be achieved in practice at 200kV. Diffractograms of images of gold nanoparticles on amorphous carbon demonstrate corresponding information transfer. The Y atom pairs in [010] oriented yttrium orthoaluminate are successfully imaged together with the Al and the O atoms. Although the 57 pm pair separation is well demonstrated separations between 55 pm and 80 pm are measured. This observation is tentatively attributed to structural relaxations and surface reconstruction in the very thin samples used. Quantification of the resolution limiting effective image spread is achieved based on an absolute match between experimental and simulated image intensity distributions.

Atomic resolution imaging of oxygen atoms close to heavy atoms by HRTEM and ED, using the superconductor SmFeAsO0.85F0.15 as an example

Imaging of light atoms has always been a challenge in high-resolution electron microscopy. Image resolution is mainly limited by lens aberrations, especially the spherical aberration of the objective lens. Image deconvolution could correct for the image distortion by lens aberrations and restore the structure projection, the resolution of which is limited by the information limit of the microscope. Electron diffraction unrestricted by lens aberrations could overcome this resolution limit. Here we show a combination of electron diffraction and image deconvolution to reveal simultaneously the atomic columns of O and considerably heavier Sm at a very close distance (1.17 Å) in iron-based superconductor SmFeAsO0.85F0.15 using a conventional 200 kV electron microscope. The approach used here, starting from an image and an electron diffraction pattern, has an advantage for those radiation-sensitive samples. Besides, it can be applied to simultaneously imaging light and heavy atoms, even though they have a big difference in atomic number and a much smaller atomic distance than the microscope resolution.