Synthesis of CuO and Cu3N Nanoparticles in and on Hollow Silica Spheres

Copper oxide nanoparticles within hollow mesoporous silica spheres were prepared by binding/adsorbing Cu2+ or [Cu(NH3)4(H2O)2]2+ ions on the surface of carbon spheres, followed by formation of a mesoporous silica shell by sol-gel processing and calcination in air. The CuO nanoparticles can subsequently be converted into Cu3N nanoparticles by nitridation with ammonia. The effect of the different copper precursors, i.e. Cu2+ and [Cu(NH3)4(H2O)2]2+, on the nanocomposites was studied. CuO nanoparticles on the outer surface of hollow silica spheres were obtained by thermal treatment of hollow CuSiO3 spheres in air. Nitridation of the CuSiO3 spheres with ammonia resulted in Cu3N@SiO2 composites, with aggregated Cu3N nanoparticles on hollow silica spheres.

The Chemistry of Cu3 N and Cu3 PdN Nanocrystals

The precursor conversion chemistry and surface chemistry of Cu₃ N and Cu₃ PdN nanocrystals are unknown or contested. Here, we first obtain phase-pure, colloidally stable nanocubes. Second, we elucidate the pathway by which copper(II) nitrate and oleylamine form Cu₃ N. We find that oleylamine is both a reductant and a nitrogen source. Oleylamine is oxidized by nitrate to a primary aldimine, which reacts further with excess oleylamine to a secondary aldimine, eliminating ammonia. Ammonia reacts with Cu^I to form Cu₃ N. Third, we investigated the surface chemistry and find a mixed ligand shell of aliphatic amines and carboxylates (formed in situ). While the carboxylates appear tightly bound, the amines are easily desorbed from the surface. Finally, we show that doping with palladium decreases the band gap and the material becomes semi-metallic. These results bring insight into the chemistry of metal nitrides and might help the development of other metal nitride nanocrystals.

Unbiased Screening of Novel Infrared Nonlinear Optical Materials with High Thermal Conductivity: Long-neglected Nitrides and Popular Chalcogenides

Traditional infrared (IR) nonlinear optical (NLO) materials such as AgGaS₂ are crucial to key devices for solid-state lasers, however, low laser damage thresholds intrinsically hinder their practical application. Here, a robust strategy is proposed for unbiased high-throughput screening of more than 140 000 materials to explore novel IR NLO materials with high thermal conductivity and wide band gap which are crucial to intrinsic laser damage threshold. Via our strategy, 106 compounds with desired band gaps, NLO coefficients and thermal conductivity are screened out, including 8 nitrides, 68 chalcogenides, in which Sr₂ SnS₄ is synthesized to verify the reliability of our process. Remarkably, thermal conductivity of nitrides is much higher than that of chalcogenides, e.g., 5×AgGaS₂ (5.13 W/m K) for ZrZnN₂ , indicating that nitrides could be a long-neglected system for IR NLO materials. This strategy provides a powerful tool for searching NLO compounds with high thermal conductivity.

Eutectic Formation, V/III Ratio and Controlled Polarity Inversion in Nitrides on Silicon[1]

The crystallographic polarity of AlN grown on Si(111) by plasma assisted molecular beam epitaxy is intentionally inverted from N-polar to Al-polar at a planar boundary. The position of the inversion boundary is controlled by a two-step growth process that abruptly changes from Al-rich to N-rich growth conditions. The polarity inversion is induced by the presence of Si, which is incorporated from an Al-Si eutectic layer that forms during the initial stages of AlN growth and floats on the AlN surface under Al-rich growth conditions. When the growth conditions change to N-rich the Al and Si in the eutectic react with the additional N-flux and are incorporated into the solid AlN film. Relatively low levels of Al-Si eutectic formation combined with lateral variations in the Si incorporation lead to nonuniformity in the polarity inversion and formation of surprisingly narrow, vertical inversion domains. The results suggest that intentional incorporation of uniform layers of Si may provide a method for producing polarity engineered nitride structures.

Detection of Si doping in the AlN/GaN MQW using Super X - EDS measurements

A multiple-quantum-well structure consisting of 40 periods of AlN/GaN:Si was investigated using a transmission electron microscope equipped with energy-dispersive X-ray spectroscopy. The thicknesses of the AlN barriers and the GaN quantum wells were 4 nm and 6 nm, respectively. The QW layers were doped with Si to a concentration of 1.3×10¹⁹cm^-3 (0.012 % at). The procedure for quantifying such a doping level using AlN as a standard is presented. The EDS results (0.013 % at) are compared with secondary ion mass spectrometry measurements (0.05 % at).

ZnH2P4N8: Case Study on Topochemical Imidonitridophosphate High-Pressure Synthesis

Nitridophosphates are subject of current research, as they have a broad spectrum of properties and potential applications, such as ion conductors or luminescent materials. Yet, the subclass of imidonitridophosphates has been studied less extensively. The primary reason is that the controlled N-H functionalization of nitridophosphates is not straight forward, making targeted synthesis more challenging. Inspired by the high-pressure (HP) post-synthetic modification of nitridophosphates, we present the topochemical HP deprotonation of phosphorus nitride imides using the high-pressure polymorph β-PN(NH) as an example. Additional incorporation of Zn2+ results in the first quaternary transition metal imidonitridophosphate ZnH2P4N8. The crystal structure was elucidated by single-crystal X-ray diffraction (SCXRD), energy-dispersive X-ray spectroscopy (EDX), powder X-ray diffraction (PXRD) and solid-state magic angle spinning nuclear magnetic resonance spectroscopy (MAS NMR). In addition, the presence of H as part of an imide group was confirmed by IR spectroscopy. The potential of this defunctionalization approach for controlling the N-H content is demonstrated by the preparation of partially deprotonated intermediates ZnxH4-2xP4N8 (x≈0.5, 0.85). This topochemical high-pressure reaction represents a promising way to prepare, control and manipulate new imide-based materials without altering their overall anionic framework.

Structural Regulation of a Multi-Component Co2P2O7-MoN/NC Electrocatalyst for Efficient Oxygen Evolution Reaction

Realizing efficient and durable non-precious metal-based electrocatalysts for oxygen evolution reaction (OER) still remains a great challenge. Here, a multi-component composite of Co2P2O7-MoN/NC containing pyrophosphate, nitride, and nitrogen-doped carbon is successfully prepared via a facile two-step synthesis method. Combining the structural regulation between the active metal- and non-metal-based species, Co2P2O7-MoN/NC demonstrates superior activity and durability for OER, requiring an overpotential of 278 mV at a current density of 10 mA cm-2, a Tafel slope of 83.3 mV dec-1, and long-term stability over 100 h in an alkaline solution. Post-characterizations reveal that synergistic effect among stable Co2P2O7, partially dissolved MoN, N-doped carbon, and new-formed CoOOH nanosheets enable structural reconstruction, fast charge transfer, and formation of oxygen-containing intermediates, promoting the OER performance significantly. This work provides a promising pathway to tune multi-components to fabricate efficient transition-metal-based electrocatalysts in energy conversion applications.

Quality Improvement of GaN Epi-layers Grown with a Strain-Releasing Scheme on Suspended Ultrathin Si Nanofilm Substrate

The material quality of III-nitrides is severely limited by the lack of cost-effective substrates with suitable lattice and thermal expansion coefficients. A suspended ultrathin silicon membrane substrate ([Formula: see text]16 nm), fabricated by an easy process on SOI substrates, is thus designed for nitride epitaxial growth, which can effectively release the strain in the epi-layers, and has demonstrated large-area (Al)GaN growth with a smooth surface and greatly reduced defect density. This research provides a promising CMOS-compatible method for growing cost-effectively high-quality III-nitrides that can be used for the development of high-performance devices.

Structural Influence of Lone Pairs in GeP2 N4 , a Germanium(II) Nitridophosphate

Owing to their widespread properties, nitridophosphates are of high interest in current research. Explorative high-pressure high-temperature investigations yielded various compounds with stoichiometry MP₂ N₄ (M=Be, Ca, Sr, Ba, Mn, Cd), which are discussed as ultra-hard or luminescent materials, when doped with Eu²⁺ . Herein, we report the first germanium nitridophosphate, GeP₂ N₄ , synthesized from Ge₃ N₄ and P₃ N₅ at 6 GPa and 800 °C. The structure was determined by single-crystal X-ray diffraction and further characterized by energy-dispersive X-ray spectroscopy, density functional theory calculations, IR and NMR spectroscopy. The highly condensed network of PN₄ -tetrahedra shows a strong structural divergence to other MP₂ N₄ compounds, which is attributed to the stereochemical influence of the lone pair of Ge²⁺ . Thus, the formal exchange of alkaline earth cations with Ge²⁺ may open access to various compounds with literature-known stoichiometry, however, new structures and properties.

Quenching-induced anion defects and precise Ru doping on Co3O4/CoN heterostructures for efficient overall water splitting performance

The difficulty of nitride modification is to develop simple and efficient strategies to induce defects and efficiently capture Ru atoms. With these in mind, this work innovatively constructed a Ru-Co3O4/CoN-L catalyst with abundant anion defects (oxygen vacancies (VO) and nitrogen vacancies (VN)) using the nitridation-quenching-Ru doping strategy. Surprisingly, the porous structure provided more active sites, and the VN and VO were conducive to promoting the anchoring of Ru atoms. These significantly improved the hydrogen evolution reaction (HER) and oxygen evolution reaction (OER) performances of the Ru-Co3O4/CoN/NF-L catalyst. The density functional theory results showed that the anion defects optimized the hydrogen adsorption capacity of the Ru active sites for the HER. Furthermore, Ru dopants and anion defects reduced the OER energy barrier of the Co-active sites, accelerating the HER and OER kinetics. This study proposes a new concept for defect construction and nitride-structure optimization.

Ammonothermal Synthesis and Solid-State NMR Study of the Imidonitridosilicate Rb3Si6N5(NH)6

The imidonitridosilicate Rb3Si6N5(NH)6, being only the second representative of this compound class, was synthesized ammonothermally at 870 K and 230 MPa. Its crystal structure was solved from single-crystal X-ray diffraction data. The imidonitridosilicate crystallizes isotypically with the respective potassium compound in space group P4132 with the lattice parameter a=10.9422(4) Å forming a three-dimensional imidonitridosilicate tetrahedra network with voids for the rubidium ions. The structure model and the presence of the imide groups were verified by Fourier-Transform infrared (FTIR) and magic-angle spinning (MAS) NMR spectroscopy, using cross polarization 15N{1H} and 29Si{1H} MAS NMR experiments. Rb3Si6N5(NH)6 represents a possible intermediate during the ammonothermal synthesis of nitridosilicates. The characterization of such intermediates improves the understanding of the reaction pathway from ammonothermal solutions to nitrides. Thus, the ammonothermal synthesis is an alternative approach to the well-established high-temperature synthesis leading to the compound class of nitridosilicates.

Synthesis and Comprehensive Studies of Be-IV-N2 (IV=Si, Ge): Solving the Mystery of Wurtzite-Type Pmc21 Structures

The research for wurtzite-type ternary nitride semiconductors containing earth abundant elements with a stoichiometry of 1 : 1 : 2 was focused on metals like Mg or Zn, so far. The vast majority of these Grimm-Sommerfeld analogue compounds crystallize in the β-NaFeO2 structure, although a second arrangement in space group Pmc21 is predicted to be a viable alternative. Despite extensive theoretical and experimental studies, this structure has so far remained undiscovered. Herein, we report on BeGeN2 in a Pmc21 structure, synthesized from Be3N2 and Ge3N4 using a high-pressure high-temperature approach at 6 GPa and 800 °C. The compound was characterized by powder X-ray diffraction (PXRD), solid state nuclear magnetic resonance (NMR), Raman and energy dispersive X-ray (EDX) spectroscopy, temperature-dependent PXRD, second harmonic generation (SHG) and UV/Vis measurements and in addition also compared to its lighter homologue BeSiN2 in all mentioned analytic techniques. The synthesis and investigation of both the first beryllium germanium nitride and the first ternary wurtzite-type nitride crystallizing in space group Pmc21 open the door to a new field of research on wurtzite-type related structures.

Combining Nitridoborates, Nitrides and Hydrides-Synthesis and Characterization of the Multianionic Sr6 N[BN2 ]2 H3

Multianionic metal hydrides, which exhibit a wide variety of physical properties and complex structures, have recently attracted growing interest. Here we present Sr6 N[BN2 ]2 H3 , prepared in a solid-state ampoule reaction at 800 °C, as the first combination of nitridoborate, nitride and hydride anions within a single compound. The crystal structure was solved from single-crystal X-ray and neutron powder diffraction data in space group P21 /c (no. 14), revealing a three-dimensional network of undulated layers of nitridoborate units, strontium atoms and hydride together with nitride anions. Magic angle spinning (MAS) NMR and vibrational spectroscopy in combination with quantum chemical calculations further confirm the structure model. Electrochemical measurements suggest the existence of hydride ion conductivity, allowing the hydrides to migrate along the layers.

Nitride Zeolites from Ammonothermal Synthesis

Oxide zeolites are synthesized from aqueous solutions in an established way employing hydrothermal synthesis. Transferring this approach to nitride zeolites requires a solvent providing nitrogen for which ammonia has proven to be particularly suitable. We present the successful ammonothermal synthesis of the (oxo)nitridosilicate compounds Ce3[Si6N11], Li2RE4[Si4N8]O3 (RE=La, Ce) and K1.25Ce7.75[Si11N21O2]O0.75. Within this procedure, the usage of supercritical ammonia as a solvent as well as the utilization of the mineralizers NaN3, Li3N and KN3, respectively, allowed the targeted synthesis of large single crystals. Formation of these (oxo)nitridosilicates depends mainly on the employed mineralizer despite their similar degree of condensation. The three compounds were structurally characterized using X-ray diffraction and their crystal structures contain a wide range of different ring sizes within their tetrahedra networks. The zeolite(-like) crystal structures are elucidated and compared to known nitridosilicate representatives of the respective structure types. Their elemental composition was investigated using energy-dispersive X-ray (EDX) spectroscopy and incorporation of the O rather than N-H functionality was confirmed by Fourier-Transform infrared (FTIR) spectroscopy as well as by charge distribution (CHARDI) and bond valence sum (BVS) calculations. The presented examples demonstrate that ammonothermal synthesis provides a one-step access from elemental starting materials towards nitride zeolites.

Highly Condensed and Super-Incompressible Be2PN3

Although beryllium and its compounds show outstanding properties, owing to its toxic potential and extreme reaction conditions the chemistry of Be under high-pressure conditions has only been investigated sparsely. Herein, we report on the highly condensed wurtzite-type Be2PN3, which was synthesized from Be3N2 and P3N5 in a high-pressure high-temperature approach at 9 GPa and 1500 °C. It is the missing member in the row of formula type M2PN3 (M = Mg, Zn). The structure was elucidated by powder X-ray diffraction (PXRD), revealing that Be2PN3 is a double nitride, rather than a nitridophosphate. The structural model was further corroborated by 9Be and 31P solid-state nuclear magnetic resonance (NMR) spectroscopy. We present 9Be NMR data for tetrahedral nitride coordination for the first time. Infrared and energy-dispersive X-ray spectroscopy (FTIR and EDX), as well as temperature dependent PXRD complement the analytical characterization. Density functional theory (DFT) calculations reveal super-incompressible behavior and the remarkable hardness of this low-density material. The formation of Be2PN3 through a high-pressure high-temperature approach expands the synthetic access to Be-containing compounds and may open access to various multinary beryllium nitrides.