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Morgan TA, Rudie J, Zamani-Alavijeh M, Kuchuk AV, Orishchin N, Alema F, Osinsky A, Sleezer R, Salamo G, Ware ME. Band Offsets of the MOCVD-Grown β-(Al 0.21Ga 0.79) 2O 3/β-Ga 2O 3 (010) Heterojunction. ACS Appl Mater Interfaces 2022; 14:33944-33951. [PMID: 35848769 DOI: 10.1021/acsami.2c04177] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/15/2023]
Abstract
The band offsets for the β-(Al0.21Ga0.79)2O3/β-Ga2O3 (010) heterojunction have been experimentally measured by X-ray photoelectron spectroscopy. High-quality β-(Al0.21Ga0.79)2O3 films were grown by metal-organic chemical vapor deposition for characterization. The indirect band gap of β-(Al0.21Ga0.79)2O3 was determined by optical transmission to be 4.69 ± 0.03 eV with a direct transition of 5.37 ± 0.03 eV, while β-Ga2O3 was confirmed to have an indirect band gap of 4.52 ± 0.03 eV with a direct transition of 4.94 ± 0.03 eV. The resulting band alignment at the heterojunction was determined to be of type II with the valence and conduction band edges of β-(Al0.21Ga0.79)2O3 being -0.26 ± 0.08 and 0.43 ± 0.08 eV, respectively, above those of β-Ga2O3 (010). These values can now be used to help better design and predict the performance of β-(AlxGa1-x)2O3 heterojunction-based devices.
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Affiliation(s)
- Timothy A Morgan
- Institute for Nanoscience and Engineering, University of Arkansas, 731 W Dickson Street, Fayetteville, Arkansas 72701, United States
- Naval Surface Warfare Center Crane, 300 HWY 361, Crane, Indiana 47522, United States
| | - Justin Rudie
- Institute for Nanoscience and Engineering, University of Arkansas, 731 W Dickson Street, Fayetteville, Arkansas 72701, United States
| | - Mohammad Zamani-Alavijeh
- Institute for Nanoscience and Engineering, University of Arkansas, 731 W Dickson Street, Fayetteville, Arkansas 72701, United States
- Physics Department, University of Arkansas, 835 W Dickson Street, Fayetteville, Arkansas 72701, United States
| | - Andrian V Kuchuk
- Institute for Nanoscience and Engineering, University of Arkansas, 731 W Dickson Street, Fayetteville, Arkansas 72701, United States
| | - Nazar Orishchin
- Agnitron Technology Incorporated, Chanhassen, Minnesota 55317, United States
| | - Fikadu Alema
- Agnitron Technology Incorporated, Chanhassen, Minnesota 55317, United States
| | - Andrei Osinsky
- Agnitron Technology Incorporated, Chanhassen, Minnesota 55317, United States
| | - Robert Sleezer
- Twin Cities Engineering, Minnesota State University, Mankato, 9700 France Avenue, Suite P0820, Bloomington, Minnesota 55431, United States
| | - Gregory Salamo
- Institute for Nanoscience and Engineering, University of Arkansas, 731 W Dickson Street, Fayetteville, Arkansas 72701, United States
| | - Morgan E Ware
- Institute for Nanoscience and Engineering, University of Arkansas, 731 W Dickson Street, Fayetteville, Arkansas 72701, United States
- Department of Electrical Engineering, University of Arkansas, 4183 Bell Engineering Center, Fayetteville, Arkansas 72701, United States
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