Zn(O,S) Buffer Layer for in Situ Hydrothermal Sb2S3 Planar Solar Cells

Hydrothermal deposition is emerging as a highly potential route for antimony-based solar cells, in which the Sb₂(S,Se)₃ is typically in situ grown on a common toxic CdS buffer layer. The narrow band gap of CdS causes a considerable absorption in the short-wavelength region and then lowers the current density of the device. Herein, TiO₂ is first evaluated as an alternative Cd-free buffer layer for hydrothermally derived Sb₂S₃ solar cells. But it suffers from a severely inhomogeneous Sb₂S₃ coverage, which is effectively eliminated by inserting a Zn(O,S) layer. The surface atom of sulfur in Zn(O,S) uniquely provides a chemical bridge to enable the quasi-epitaxial deposition of Sb₂S₃ thin film, confirming by both morphology and binding energy analysis using DFT. Then the results of the first-principles calculations also show that Zn(O,S)/Sb₂S₃ has a more stable structure than TiO₂/Sb₂S₃. The resultant perfect Zn(O,S)/Sb₂S₃ junction, with a suitable band alignment and excellent interface contact, delivers a remarkably enhanced J_SC and V_OC for Sb₂S₃ solar cells. The device efficiency with the TiO₂/Zn(O,S) buffer layer boosts from 0.54% to 3.70% compared with the counterpart of TiO₂, which has a champion efficiency of Cd-free Sb₂S₃ solar cells with a structure of ITO/TiO₂/Zn(O,S)/Sb₂S₃/Carbon/Ag by in situ hydrothermal deposition. This work provides a guideline for the hydrothermal deposition of antimony-based films upon a nontoxic buffer layer.

Mechanistic study of the gas-phase chemistry during the spray deposition of Zn(O,S) films by mass spectrometry

The mass spectrometer, is a powerful tool to identify species and investigate reactions in the gas phase. In this work, the mechanism of aerosol assisted chemical vapor deposition (AACVD) of Zn(O,S) films prepared from H₂S and zinc acetylacetonate (Zn(acac)₂) precursor solutions is elucidated by mass spectrometry. The thermochemical behavior of Zn(acac)₂ is investigated by characterizing the influence of the solvent (H₂O or ethanol), the pH value of the precursor solution and the effect of the reactant H₂S, and by tracking gaseous intermediate products using mass spectrometry. Based on these results, a proton-promoted thermolysis mechanism for the AACVD Zn(O,S) film formation is then proposed, which is initiated by the hydrolysis with H₂O as the first stage, followed either by the rearrangement with an intramolecular proton or by the reaction with an extramolecular proton to produce ZnO or Zn(O,S). A real time mass tracking of the AACVD process reveals that only an adequate amount of H₂S promotes the chemical gas-phase decomposition and sulfurization process, while an excess of H₂S depletes the gaseous Zn(acac)₂ concentration and consequently reduces the film growth rate. The knowledge of the thermal decomposition process helps to optimize synthesis conditions and to adjust film properties to meet the requirement of the application in chalcopyrite or kesterite thin film solar cells.

Revealing the Bonding Environment of Zn in ALD Zn(O,S) Buffer Layers through X-ray Absorption Spectroscopy

Zn(O,S) buffer layer electronic configuration is determined by its composition and thickness, tunable through atomic layer deposition. The Zn K and L-edges in the X-ray absorption near edge structure verify ionicity and covalency changes with S content. A high intensity shoulder in the Zn K-edge indicates strong Zn 4s hybridized states and a preferred c-axis orientation. 2-3 nm thick films with low S content show a subdued shoulder showing less contribution from Zn 4s hybridization. A lower energy shift with film thickness suggests a decreasing bandgap. Further, ZnSO₄ forms at substrate interfaces, which may be detrimental for device performance.

Soft X-ray Spectroscopy of a Complex Heterojunction in High-Efficiency Thin-Film Photovoltaics: Intermixing and Zn Speciation at the Zn(O,S)/Cu(In,Ga)Se2 Interface

The chemical structure of the Zn(O,S)/Cu(In,Ga)Se₂ interface in high-efficiency photovoltaic devices is investigated using X-ray photoelectron and Auger electron spectroscopy, as well as soft X-ray emission spectroscopy. We find that the Ga/(Ga+In) ratio at the absorber surface does not change with the formation of the Zn(O,S)/Cu(In,Ga)Se₂ interface. Furthermore, we find evidence for Zn in multiple bonding environments, including ZnS, ZnO, Zn(OH)₂, and ZnSe. We also observe dehydrogenation of the Zn(O,S) buffer layer after Ar⁺ ion treatment. Similar to high-efficiency CdS/Cu(In,Ga)Se₂ devices, intermixing occurs at the interface, with diffusion of Se into the buffer, and the formation of S-In and/or S-Ga bonds at or close to the interface.

ALD Zn(O,S) Thin Films' Interfacial Chemical and Structural Configuration Probed by XAS

The ability to precisely control interfaces of atomic layer deposited (ALD) zinc oxysulfide (Zn(O,S)) buffer layers to other layers allows precise tuning of solar cell performance. The O K- and S K-edge X-ray absorption near edge structure (XANES) of ∼2-4 nm thin Zn(O,S) films reveals the chemical and structural influences of their interface with ZnO, a common electrode material and diffusion barrier in solar cells. We observe that sulfate formation at oxide/sulfide interfaces is independent of film composition, a result of sulfur diffusion toward interfaces. Leveraging sulfur's diffusivity, we propose an alternative ALD process in which the zinc precursor pulse is bypassed during H2S exposure. Such a process yields similar results to the nanolaminate deposition method and highlights mechanistic differences between ALD sulfides and oxides. By identifying chemical species and structural evolution at sulfide/oxide interfaces, this work provides insights into increasing thin film solar cell efficiencies.

Photovoltaic Performance and Interface Behaviors of Cu(In,Ga)Se2 Solar Cells with a Sputtered-Zn(O,S) Buffer Layer by High-Temperature Annealing

We selected a sputtered-Zn(O,S) film as a buffer material and fabricated a Cu(In,Ga)Se2 (CIGS) solar cell for use in monolithic tandem solar cells. A thermally stable buffer layer was required because it should withstand heat treatment during processing of top cell. Postannealing treatment was performed on a CIGS solar cell in vacuum at temperatures from 300-500 °C to examine its thermal stability. Serious device degradation particularly in VOC was observed, which was due to the diffusion of thermally activated constituent elements. The elements In and Ga tend to out-diffuse to the top surface of the CIGS, while Zn diffuses into the interface of Zn(O,S)/CIGS. Such rearrangement of atomic fractions modifies the local energy band gap and band alignment at the interface. The notch-shape induced at the interface after postannealing could function as an electrical trap during electron transport, which would result in the reduction of solar cell efficiency.