Femtosecond Laser-Induced Anisotropic Structure and Nonlinear Optical Response of Yttria-Stabilized Zirconia Single Crystals with Different Planes

Nonlinear optical properties have been extensively studied due to their promising nonlinear effects and various applications. With ultrashort duration and ultrahigh intensity, a femtosecond laser can fabricate various superior-quality micro-/nanostructures to improve the nonlinearity of materials, which are promising for stable and high-performance nonlinear devices. In this contribution, yttria-stabilized zirconia (YSZ) with fs laser-induced micro-/nanostructures is demonstrated to exhibit unique anisotropic light-material interaction and nonlinear optical response on [100], [110], and [111] planes. Time-resolved reflectivity of YSZ after fs laser excitation is investigated by a pump-probe experiment, which is consistent with simulations through the plasma model combined with a two-temperature model. These results indicate two early ablation mechanisms: Coulomb explosion and melting. Anisotropic crack structures are formed due to thermal stress, which is always ignored in fs laser fabrication and is verified by Raman mapping and analysis of slip systems on different crystal planes. Through the z-scan measurement, the nonlinear absorption (NLA) of crack structures is effectively improved, and a nearly 18 times enhancement of the NLA coefficient is acquired in [100] samples, while a 2 times enhancement in [110] and [111] samples. Such great enhancement of NLA is mainly due to the abundant presence of crack structures and the increase of fs laser-induced oxygen vacancies in [100] YSZ. These results provide a potential way of utilizing fs laser to improve the nonlinearity for the technological development in nonlinear devices.

Mechanisms of Pulse Modulated Holmium:YAG Lithotripsy

Introduction: This study aimed at answering three research questions: (1) Under the experimental conditions studied, what is the dominant mechanism of Holmium:YAG lithotripsy with or without pulse modulation? (2) Under what circumstances can laser pulse modulation increase crater volume of stone ablation per joule of emitted radiant energy? (3) Are BegoStone phantoms a suitable model for laser lithotripsy studies? Materials and Methods: The research questions were addressed by ablation experiments with BegoStone phantoms and native stones. Experiments were performed under three stone conditions: dry stones in air, hydrated stones in air, and hydrated stones in water. Single pulses with and without pulse modulation were applied. For each pulse mode, temporal profile, transmission through 1 mm water, and cavitation bubble collapse pressures were measured and compared. For each stone condition and pulse mode, stones were ablated with a fiber separation distance of 1 mm and crater volumes were measured using optical coherence tomography. Results: Pulses with and without pulse modulation had high (>80%) transmission through 1 mm of water. Pulses without pulse modulation generated much higher peak pressures than those with pulse modulation (62.3 vs 11.4 bar). Pulse modulation resulted in similar or larger craters than without pulse modulation. Trends in BegoStone crater volumes differed from trends in native stones. Conclusions: This results of this study suggest that the dominant mechanism is photothermal with possible photoacoustic contributions for some stone compositions. Pulse modulation can increase ablation volume per joule of emitted radiant energy, but the effect may be composition specific. BegoStones showed unique infrared ablation characteristics compared with native stones and are not a suitable model for laser lithotripsy studies.

One-Step Fabrication Method of GaN Films for Internal Quantum Efficiency Enhancement and Their Ultrafast Mechanism Investigation

The third-generation semiconductors are the cornerstone of the power semiconductor leap forward and have attracted much attention because of their excellent properties and wide applications. Meanwhile, femtosecond laser processing as a convenient method further improves the performance of the related devices and expands the application prospect. In this work, an approximate 3 times improvement of the internal quantum efficiency (IQE) and a 5.5 times enhancement of the photoluminescence (PL) intensity were achieved in the GaN film prepared using a one-step femtosecond laser fabrication method. Three types of final micro/nanostructures were found with different femtosecond laser fluences, which could be attributed to the decomposition, melting, bubble nucleation, and phase explosion of GaN. The mechanisms of the microbump structure formation and enhancement of IQE were studied experimentally by the time-resolved reflection pump-probe technique, X-ray photoelectron spectroscopy (XPS), and Raman spectroscopy. Simulations for the laser-GaN interaction have also been performed to ascertain the micro/nanostructure formation principle. These results promote the potential applications of femtosecond lasers on GaN and other wide band gap semiconductors, such as UV-light-emitting diodes (LEDs), photodetectors, and random lasers for use in sensing and full-field imaging.