On the choice of proper average lifetime formula for an ensemble of emitters showing non-single exponential photoluminescence decay

In this paper, we investigate non-single exponential photoluminescence decays in various disordered condensed-matter systems. For such materials, two formulas for the average lifetime of system's excited state are commonly used in the analysis of experimental data. In many cases, the choice of formula is arbitrary and lacks a clear physical justification. For this reason, our main goal is to show that the choice of correct mathematical formula should be based on the interpretation of measured photoluminescence decay curve. It is shown that depending on the investigated system, after appropriate normalization, photoluminescence decay curve can represent either a survival probability function or a probability density function of lifetime and for this reason two different formulas for the average lifetime are required. It is also shown that, depending on luminescence quantum yield, some information on the probability density function of lifetime can be lost in the process of measurement, which results in underestimated values of average lifetime. Finally, we provide an interpretation of total decay rate distributions which are frequently obtained by phenomenological modeling of non-single exponential photoluminescence decays.

Changes of the absorption cross section of Si nanocrystals with temperature and distance

The absorption cross section (ACS) of silicon nanocrystals (Si NCs) in single-layer and multilayer structures with variable thickness of oxide barriers is determined via a photoluminescence (PL) modulation technique that is based on the analysis of excitation intensity-dependent PL kinetics under modulated pumping. We clearly demonstrate that roughly doubling the barrier thickness (from ca. 1 to 2.2 nm) induces a decrease of the ACS by a factor of 1.5. An optimum separation barrier thickness of ca. 1.6 nm is calculated to maximize the PL intensity yield. This large variation of ACS values with barrier thickness is attributed to a modulation of either defect population states or of the efficiency of energy transfer between confined NC layers. An exponential decrease of the ACS with decreasing temperature down to 120 K can be explained by smaller occupation number of phonons and expansion of the band gap of Si NCs at low temperatures. This study clearly shows that the ACS of Si NCs cannot be considered as independent on experimental conditions and sample parameters.

Correlation of Structure, Tunable Colors, and Lifetimes of (Sr, Ca, Ba)Al₂O₄:Eu2+, Dy3+ Phosphors

(Sr, Ca, Ba)Al₂O₄:Eu²⁺, Dy³⁺ phosphors were prepared via a high temperature solid-state reaction method. The correlation of phase structure, optical properties and lifetimes of the phosphors are investigated in this work. For the (Sr, Ca)Al₂O₄:Eu²⁺, Dy³⁺ phosphors, the different phase formation from monoclinic SrAl₂O₄ phase to hexagonal SrAl₂O₄ phase to monoclinic CaAl₂O₄ phase was observed when the Ca content increased. The emission color of SrAl₂O₄:Eu²⁺, Dy³⁺ phosphors varied from green to blue. For the (Sr, Ba)Al₂O₄:Eu²⁺, Dy³⁺ phosphors, different phase formation from the monoclinic SrAl₂O₄ phase to the hexagonal BaAl₂O₄ phase was observed, along with a shift of emission wavelength from 520 nm to 500 nm. More interestingly, the decay time of SrAl₂O₄:Eu²⁺, Dy³⁺ changed due to the different phase formations. Lifetime can be dramatically shortened by the substitution of Sr²⁺ with Ba²⁺ cations, resulting in improving the performance of the alternating current light emitting diode (AC-LED). Finally, intense LEDs are successfully obtained by combining these phosphors with Ga(In)N near UV chips.