Electrochemically Driven Coordination Tuning of FeOOH Integrated on Carbon Fiber Paper for Enhanced Oxygen Evolution

Coordination tuning of catalysts is a highly effective strategy for activating and improving the intrinsic activity. Herein, a Co-engineered FeOOH catalyst integrated on carbon fiber paper (Co-FeOOH/CFP) is reported, which realized a great improvement of the oxygen evolution activity by tuning the coordination geometry of the Fe species with an electrochemically driven method. Experiments and theoretical calculation demonstrate that the FeO bonds of FeOOH are partially broken, which is rooted in the Co incorporation, thus resulting in unsaturated FeO₆ ligand structures and a relatively narrow bandgap. Consequently, the reorganized Fe sites on the surface show an enhanced capability for adsorbing OH^- species and the Co-FeOOH exhibits an improved conductivity. As expected, the Co-FeOOH/CFP hybrids exhibit an extremely low overpotential of ≈250 mV at 10 mA cm^-2 and a small Tafel slope, which far outperforms that of electrochemically sluggish FeOOH. The present work emphasizes the importance of local Fe coordination in catalysis and provides an in-depth insight into the mechanism of the enhanced catalytic activity.

On-Surface Synthesis of Variable Bandgap Nanoporous Graphene

Tuning the bandgap of nanoporous graphene is desirable for applications such as the charge transport layer in organic-hybrid devices. The holy grail in the field is the ability to synthesize 2D nanoporous graphene with variable pore sizes, and hence tunable band gaps. Herein, the on-surface synthesis of nanoporous graphene with variable bandgaps is demonstrated. Two types of nanoporous graphene are synthesized via hierarchical CC coupling, and are verified by low-temperature scanning tunneling microscopy and non-contact atomic force microscopy. Nanoporous graphene-1 is non-planar, and nanoporous graphene-2 is a single-atom thick planar sheet. Scanning tunneling spectroscopy measurements reveal that nanoporous graphene-2 has a bandgap of 3.8 eV, while nanoporous graphene-1 has a larger bandgap of 5.0 eV. Corroborated by first-principles calculations, it is proposed that the large bandgap opening is governed by the confinement of π-electrons induced by pore generation and the non-planar structure. The finding shows that by introducing nanopores or a twisted structure, semi metallic graphene is converted into semiconducting nanoporous graphene-2 or insulating wide-bandgap nanoporous graphene-1.

First-Principles Study of Mo Segregation in MoNi(111): Effects of Chemisorbed Atomic Oxygen

Segregation at metal alloy surfaces is an important issue because many electrochemical and catalytic properties are directly correlated to the surface composition. We have performed density functional theory calculations for Mo segregation in MoNi(111) in the presence of chemisorbed atomic oxygen. In particular, the coverage dependence and possible adsorption-induced segregation phenomena are addressed by investigating segregation energies of the Mo atom in MoNi(111). The theoretical calculated results show that the Mo atom prefers to be embedded in the bulk for the clean MoNi(111), while it segregates to the top-most layer when the oxygen coverage is thicker than 1/9 monolayer (ML). Furthermore, we analyze the densities of states for the clean and oxygen-chemisorbed MoNi(111), and see a strong covalent bonding between Mo d-band states and O p-states. The present study provides valuable insight for exploring practical applications of Ni-based alloys as hydrogen evolution electrodes.

Self-inhibition effect of metal incorporation in nanoscaled semiconductors

There has been a persistent effort to understand and control the incorporation of metal impurities in semiconductors at nanoscale, as it is important for semiconductor processing from growth, doping to making contact. Previously, the injection of metal atoms into nanoscaled semiconductor, with concentrations orders of magnitude higher than the equilibrium solid solubility, has been reported, which is often deemed to be detrimental. Here our theoretical exploration reveals that this colossal injection is because gold or aluminum atoms tend to substitute Si atoms and thus are not mobile in the lattice of Si. In contrast, the interstitial atoms in the Si lattice such as manganese (Mn) are expected to quickly diffuse out conveniently. Experimentally, we confirm the self-inhibition effect of Mn incorporation in nanoscaled silicon, as no metal atoms can be found in the body of silicon (below 10¹⁷ atoms per cm^-3) by careful three-dimensional atomic mappings using highly focused ultraviolet-laser-assisted atom-probe tomography. As a result of self-inhibition effect of metal incorporation, the corresponding field-effect devices demonstrate superior transport properties. This finding of self-inhibition effect provides a missing piece for understanding the metal incorporation in semiconductor at nanoscale, which is critical not only for growing nanoscale building blocks, but also for designing and processing metal-semiconductor structures and fine-tuning their properties at nanoscale.