SET Kinetics of Ag/HfO2-Based Diffusive Memristors under Various Counter-Electrode Materials

The counter-electrode (CE) material in electrochemical metallization memory (ECM) cells plays a crucial role in the switching process by affecting the reactions at the CE/electrolyte interface. This is due to the different electrocatalytic activity of the CE material towards reduction-oxidation reactions, which determines the metal ion concentration in the electrolyte and ultimately impacts the switching kinetics. In this study, the focus is laid on Pt, TiN, and W, which are relevant in standard chip technology. For these, the influence of CE metal on the switching kinetics of Ag/HfO₂-based volatile ECM cells is investigated. Rectangular voltage pulses of different amplitudes were applied, and the SET times were analyzed from the transient curves. The results show that CE material has a significant effect on the SET kinetics, with differences being observed depending on the voltage regime. The formation of interfacial oxides at the CE/electrolyte interface, particularly for non-noble metals, is also discussed in relation to the findings. Overall, this work highlights the important role of the CE material in the switching process of Ag/HfO₂-based diffusive memristors and the importance of considering interfacial oxide formation in the design of these devices.

Electric Control of Exchange Bias at Room Temperature by Resistive Switching via Electrochemical Metallization

Electric field control of exchange bias (EB) plays an important role in spintronics due to its attractive merit of lower energy consumption. Here, we propose a novel method for electrically tunable EB at room temperature in a device with the stack of Si/SiO2/Ta/Pt/Ag/Mn-doped ZnO (MZO)/Pt/FeMn/Co/ITO by resistive switching (RS) via electrochemical metallization (ECM). The device shows enhanced and weakened EB when set at high-resistance state (HRS) and low-resistance state (LRS), respectively. For the device at LRS, the aberration-corrected scanning transmission electron microscopy (STEM) characterizations unambiguously reveal that the Ag filaments grow initially from the Ag anode and then elongate toward the ITO cathode. It is inferred that at LRS, a small portion of Ag filaments have passed through the MZO and the intervening thin Pt layer and extended into the FeMn layer. After applying reverse voltage, these Ag filaments are electrochemically dissolved and ruptured near the MZO/Pt interface. This is considered to be the main mechanism responsible for RS and switchable EB as well. This work presents a new strategy for designing low-power, nonvolatile magnetoelectric random access memory devices.

Voltage-Tunable Ultra-Steep Slope Atomic Switch with Selectivity over 1010

Atomic switch-based selectors, which utilize the formation of conductive filaments by the migration of ions, are researched for cross-point array architecture due to their simple structure and high selectivity. However, the difficulty in controlling the formation of filaments causes uniformity and reliability issues. Here, a multilayer selector with Pt/Ag-doped ZnO/ZnO/Ag-doped ZnO/Pt structure by the sputtering process is presented. A multilayer structure enables control of the filament formation by preventing excessive influx of Ag ions. The multilayer selector device exhibits a high on-current density of 2 MA cm^-2 , which can provide sufficient current for the operation with the memory device. Also, the device exhibits high selectivity of 10¹⁰ and a low off-current of 10^-13 A. The threshold voltage of selector devices can be controlled by modulating the thickness of the ZnO layer. By connecting a multilayer selector device to a resistive switching memory, the leakage current of the memory device can be reduced. These results demonstrate that a multilayer structure can be used in a selector device to improve selectivity and reliability for use in high-density memory devices.

Bipolar Resistive Switching in Junctions of Gallium Oxide and p-type Silicon

In this work, native GaO_x is positioned between bulk gallium and degenerately doped p-type silicon (p⁺-Si) to form Ga/GaO_x/SiO_x/p⁺-Si junctions. These junctions show memristive behavior, exhibiting large current-voltage hysteresis. When cycled between -2.5 and 2.5 V, an abrupt insulator-metal transition is observed that is reversible when the polarity is reversed. The ON/OFF ratio between the high and low resistive states in these junctions can reach values on the order of 10⁸ and retain the ON and OFF resistive states for up to 10⁵ s with an endurance exceeding 100 cycles. The presence of a nanoscale layer of gallium oxide is critical to achieving reversible resistive switching by formation and dissolution of the gallium filament across the switching layer.

A Low-Current and Analog Memristor with Ru as Mobile Species

The switching parameters and device performance of memristors are predominately determined by their mobile species and matrix materials. Devices with oxygen or oxygen vacancies as the mobile species usually exhibit a great retention but also need a relatively high switching current (e.g., >30 µA), while devices with Ag or Cu as cation mobile species do not require a high switching current but usually show a poor retention. Here, Ru is studied as a new type of mobile species for memristors to achieve low switching current, fast speed, good reliability, scalability, and analog switching property simultaneously. An electrochemical metallization-like memristor with a stack of Pt/Ta₂ O₅ /Ru is developed. Migration of Ru ions is revealed by energy-dispersive X-ray spectroscopy mapping and in situ transmission electron microscopy within a sub-10 nm active device area before and after switching. The results open up a new avenue to engineer memristors for desired properties.

Lead-Free All-Inorganic Cesium Tin Iodide Perovskite for Filamentary and Interface-Type Resistive Switching toward Environment-Friendly and Temperature-Tolerant Nonvolatile Memories

Recently, organometallic and all-inorganic halide perovskites (HPs) have become promising materials for resistive switching (RS) nonvolatile memory devices with low power consumption because they show current-voltage hysteresis caused by fast ion migration. However, the toxicity and environmental pollution potential of lead, a common constituent of HPs, has limited the commercial applications of HP-based devices. Here, RS memory devices based on lead-free all-inorganic cesium tin iodide (CsSnI₃) perovskites with temperature tolerance are successfully fabricated. The devices exhibit reproducible and reliable bipolar RS characteristics in both Ag and Au top electrodes (TEs) with different switching mechanisms. The Ag TE devices show filamentary RS behavior with ultralow operating voltages (<0.15 V). In contrast, the Au TE devices have interface-type RS behavior with gradual resistance changes. This suggests that the RS characteristics are attributed to either the formation of metal filaments or the ion migration of defects in HPs under applied electric fields. These distinct mechanisms may permit the opportunity to design devices for specific purposes. This work will pave the way for lead-free all-inorganic HP-based nonvolatile memory for commercial application in HP-based devices.

Soft Ultraviolet (UV) Photopatterning and Metallization of Self-Assembled Monolayers (SAMs) Formed from the Lipoic Acid Ester of α-Hydroxy-1-acetylpyrene: The Generality of Acid-Catalyzed Removal of Thiol-on-Gold SAMs using Soft UV Light

Under a layer of 0.1 M HCl in isopropanol, soft ultraviolet (UV) (365 nm) photolysis of the thiol-on-gold self-assembled monolayer (SAM) derived from the lipoic acid ester of α-hydroxy-1-acetylpyrene results in the expected removal of the acetylpyrene protecting group. When photolyzing through a mask, this can be used to produce a patterned surface and, at a controlled electrochemical potential, it is then possible to selectively and reversibly electrodeposit copper on the photolyzed regions. Rather surprisingly, under these photolysis conditions, there is not only the expected photodeprotection of the ester but also partial removal of the lipoic acid layer which has been formed. In further studies, it is shown that this type of acid-catalyzed photoremoval of SAM layers by soft UV is a rather general phenomenon and results in the partial removal of the thiol-on-gold SAM layers derived from other ω-thiolated carboxylic acids. However, this phenomenon is chain-length dependent. Under conditions in which there is a ∼60% reduction in the thickness of the SAM derived from dithiobutyric acid, the SAM derived from mercaptoundecanoic acid is almost unaffected. The process by which the shorter-chain SAM layers are partially removed is not fully understood because these compounds do not absorb significantly in the 365 nm region of the spectrum! Significantly, this study shows that acid catalysis photolysis of thiol-on-gold SAMs needs to be used with caution.

Interfacial Redox Reactions Associated Ionic Transport in Oxide-Based Memories

As an alternative to transistor-based flash memories, redox reactions mediated resistive switches are considered as the most promising next-generation nonvolatile memories that combine the advantages of a simple metal/solid electrolyte (insulator)/metal structure, high scalability, low power consumption, and fast processing. For cation-based memories, the unavailability of in-built mobile cations in many solid electrolytes/insulators (e.g., Ta₂O₅, SiO₂, etc.) instigates the essential role of absorbed water in films to keep electroneutrality for redox reactions at counter electrodes. Herein, we demonstrate electrochemical characteristics (oxidation/reduction reactions) of active electrodes (Ag and Cu) at the electrode/electrolyte interface and their subsequent ions transportation in Fe₃O₄ film by means of cyclic voltammetry measurements. By posing positive potentials on Ag/Cu active electrodes, Ag preferentially oxidized to Ag⁺, while Cu prefers to oxidize into Cu²⁺ first, followed by Cu/Cu⁺ oxidation. By sweeping the reverse potential, the oxidized ions can be subsequently reduced at the counter electrode. The results presented here provide a detailed understanding of the resistive switching phenomenon in Fe₃O₄-based memory cells. The results were further discussed on the basis of electrochemically assisted cations diffusions in the presence of absorbed surface water molecules in the film.