Vibrational Changes Induced by Electron Transfer in Surface Bound Azurin Metalloprotein Studied by Tip-Enhanced Raman Spectroscopy and Scanning Tunneling Microscopy

The copper protein azurin, due to the peculiar coupling of its optical and vibronic properties with electron transfer (ET) and its biorecognition capabilities, is a very promising candidate for bioelectronic, bio-optoelectronic and biosensor applications. However, a complete understanding of the fundamental processes relating azurin ET and its optical and vibronic characteristics with the charge transport mechanisms occurring in proteins bound to a conductive surface, the typical scenario for a biosensor or bioelectronic component, is still lacking. We studied azurin proteins bound to a gold electrode surface by scanning tunneling microscopy combined with tip-enhanced Raman spectroscopy (STM-TERS). Robust TER spectra were obtained, and the protein's vibronic response under optical excitation in resonance with its ligand-to-metal charge transfer band was found to be affected by the tunneling parameters, indicating a direct involvement of the active site vibrations in the electron transport process.

Electrical and Thermal Transport through Silver Nanowires and Their Contacts: Effects of Elastic Stiffening

Silver nanowires have been widely adopted as nanofillers in composite materials used for various applications. Electrical and thermal properties of these composites are critical for proper device operation, and highly depend on transport through the nanowires and their contacts, yet studies on silver nanowires have been limited to one or two samples and no solid data have been reported for individual contacts. Through systematic measurements of silver nanowires of different sizes, we show that the Lorenz number increases with decreasing wire diameter and has a higher value at wire contacts. Examination of the corresponding electrical and thermal conductivities indicates that these changes are due to contributions of phonons that become more important as a result of elastic stiffening. The derived contact thermal conductance per unit area between silver nanowires is ∼10 times that between carbon nanotubes. This helps to explain the more significant thermal conductivity enhancement of silver nanowires-based composites.

Quantum Interference Effects in Resonant Raman Spectroscopy of Single- and Triple-Layer MoTe2 from First-Principles

We present a combined experimental and theoretical study of resonant Raman spectroscopy in single- and triple-layer MoTe₂. Raman intensities are computed entirely from first-principles by calculating finite differences of the dielectric susceptibility. In our analysis, we investigate the role of quantum interference effects and the electron-phonon coupling. With this method, we explain the experimentally observed intensity inversion of the A₁^' vibrational modes in triple-layer MoTe₂ with increasing laser photon energy. Finally, we show that a quantitative comparison with experimental data requires the proper inclusion of excitonic effects.

Upconversion of Light into Bright Intravalley Excitons via Dark Intervalley Excitons in hBN-Encapsulated WSe2 Monolayers

Semiconducting monolayers of transition-metal dichalcogenides are outstanding platforms to study both electronic and phononic interactions as well as intra- and intervalley excitons and trions. These excitonic complexes are optically either active (bright) or inactive (dark) due to selection rules from spin or momentum conservation. Exploring ways of brightening dark excitons and trions has strongly been pursued in semiconductor physics. Here, we report on a mechanism in which a dark intervalley exciton upconverts light into a bright intravalley exciton in hBN-encapsulated WSe₂ monolayers. Excitation spectra of upconverted photoluminescence reveals resonances at energies 34.5 and 46.0 meV below the neutral exciton in the nominal WSe₂ transparency range. The required energy gains are theoretically explained by cooling of resident electrons or by exciton scattering with Λ- or K-valley phonons. Accordingly, an elevated temperature and a moderate concentration of resident electrons are necessary for observing the upconversion resonances. The interaction process observed between the inter- and intravalley excitons elucidates the importance of dark excitons for the optics of two-dimensional materials.

Highly efficient photothermal effect by atomic-thickness confinement in two-dimensional ZrNCl nanosheets

We report a giant photothermal effect arising from quantum confinement in two-dimensional nanomaterials. ZrNCl ultrathin nanosheets with less than four monolayers of graphene-like nanomaterial successfully generated synergetic effects of larger relaxation energy of photon-generated electrons and intensified vibration of surface bonds, offering predominantly an enhancement of the electron-phonon interaction to a maximized extent. As a result, they could generate heat flow reaching an ultrahigh value of 5.25 W/g under UV illumination with conversion efficiency up to 72%. We anticipate that enhanced electron-phonon coupling in a quantum confinement system will be a powerful tool for optimizing photothermal conversion of inorganic semiconductors.

A phonon scattering bottleneck for carrier cooling in lead chalcogenide nanocrystals

The cooling dynamics of hot charge carriers in colloidal lead chalcogenide nanocrystals is studied by hyperspectral transient absorption spectroscopy. We demonstrate a transient accumulation of charge carriers at a high energy critical point in the Brillouin zone. Using a theoretical study of the cooling rate in lead chalcogenides, we attribute this slowing down of charge carrier cooling to a phonon scattering bottleneck around this critical point. The relevance of this observation for the possible harvesting of the excess energy of hot carriers by schemes such as multiexciton generation is discussed.

Hot-Carrier Seebeck Effect: Diffusion and Remote Detection of Hot Carriers in Graphene

We investigate hot carrier propagation across graphene using an electrical nonlocal injection/detection method. The device consists of a monolayer graphene flake contacted by multiple metal leads. Using two remote leads for electrical heating, we generate a carrier temperature gradient that results in a measurable thermoelectric voltage V(NL) across the remaining (detector) leads. Due to the nonlocal character of the measurement, V(NL) is exclusively due to the Seebeck effect. Remarkably, a departure from the ordinary relationship between Joule power P and V(NL), V(NL) ∼ P, becomes readily apparent at low temperatures, representing a fingerprint of hot-carrier dominated thermoelectricity. By studying V(NL) as a function of bias, we directly determine the carrier temperature and the characteristic cooling length for hot-carrier propagation, which are key parameters for a variety of new applications that rely on hot-carrier transport.

Fano-Type Wavelength-Dependent Asymmetric Raman Line Shapes from MoS2 Nanoflakes

Excitation wavelength-dependent Raman spectroscopy has been carried out to study electron-phonon interaction (Fano resonance) in multi-layered bulk 2H-MoS2 nano-flakes. The electron-phonon coupling is proposed to be caused due to interaction between energy of an excitonic quasi-electronic continuum and the discrete one phonon, first-order Raman modes of MoS2. It is proposed that an asymmetrically broadened Raman line shape obtained by 633 nm laser excitation is due to electron-phonon interaction whose electronic continuum is provided by the well-known A and B excitons. Typical wavelength-dependent Raman line shape has been observed, which validates and quantifies the Fano interaction present in the samples. The experimentally obtained Raman scattering data show very good agreement with the theoretical Fano-Raman line-shape functions and help in estimating the coupling strength. Values of the electron-phonon interaction parameter obtained, through line-shape fitting, for the two excitation wavelengths have been compared and shown to have generic Fano-type dependence on the excitation wavelength.

Importance of Polaronic Effects for Charge Transport in CdSe Quantum Dot Solids

We developed an accurate model accounting for electron-phonon interaction in colloidal quantum dot supercrystals that allowed us to identify the nature of charge carriers and the electrical transport regime. We find that in experimentally analyzed CdSe nanocrystal solids, the electron-phonon interaction is sufficiently strong that small polarons localized to single dots are formed. Charge-carrier transport occurs by small polaron hopping between the dots, with mobility that decreases with increasing temperature. While such a temperature dependence of mobility is usually considered as a proof of band transport, we show that the same type of dependence occurs in the system where transport is dominated by small polaron hopping.

Anatase TiO2-A Model System for Large Polaron Transport

Large polarons have been of significant recent technological interest as they screen and protect electrons from point-scattering centers. Anatase TiO₂ is a model system for studying large polarons as they can be studied systematically over a wide range of temperature and carrier density. The electronic and magneto transport properties of reduced anatase TiO₂ epitaxial thin films are analyzed considering various polaronic effects. Unexpectedly, with increasing carrier concentration, the mobility increases, which rarely happens in common metallic systems. We find that the screening of the electron-phonon (e-ph) coupling by excess carriers is necessary to explain this unusual dependence. We also find that the magnetoresistance could be decomposed into a linear and a quadratic component, separately characterizing the carrier transport and trapping as a function of temperature, respectively. The various transport behaviors could be organized into a single phase diagram, which clarifies the evolution of large polaron in this material.

Self-Trapping of Charge Carriers in Semiconducting Carbon Nanotubes: Structural Analysis

The spatial extent of charged electronic states in semiconducting carbon nanotubes with indices (6,5) and (7,6) was evaluated using density functional theory. It was observed that electrons and holes self-trap along the nanotube axis on length scales of about 4 and 8 nm, respectively, which localize cations and anions on comparable length scales. Self-trapping is accompanied by local structural distortions showing periodic bond-length alternation. The average lengthening (shortening) of the bonds for anions (cations) is expected to shift the G-mode frequency to lower (higher) values. The smaller-diameter nanotube has reduced structural relaxation due to higher carbon-carbon bond strain. The reorganization energy due to charge-induced deformations in both nanotubes is found to be in the 30-60 meV range. Our results represent the first theoretical simulation of self-trapping of charge carriers in semiconducting nanotubes, and agree with available experimental data.

Electrostatically Enhanced Electron-Phonon Interaction in Monolayer 2H-MoSe2 Grown by Molecular Beam Epitaxy

The enhancement of electron-phonon interaction provides a reasonable explanation for gate-tunable phonon properties in some semiconductors where multiple inequivalent valleys are simultaneously occupied upon charge doping, especially in few-layer transition metal dichalcogenides (TMDs). In this work, we report var der Waals epitaxy of 2H-MoSe₂ by molecular beam epitaxy (MBE) and gate-tunable phonon properties in monolayer and bilayer MoSe₂. In monolayer MoSe₂, we find that out-of-plane phonon mode A_1g exhibits a strong softening and shifting toward lower wavenumbers at a high electron doping level, while in-plane phonon mode E_2g¹ remains unchanged. The softening and shifting of the out-of-plane phonon mode could be attributed to the increase of electron-phonon interaction and the simultaneous occupation of electrons in multiple inequivalent valleys. In bilayer MoSe₂, no corresponding changes of phonon modes are detected at the same doping level, which could originate from the occupation of electrons only in single valleys upon high electron doping. This study demonstrates electrostatically enhanced electron-phonon interaction in monolayer MoSe₂ and clarifies the relevance between occupation of multiple valleys and phonon properties by comparing Raman spectra of monolayer and bilayer MoSe₂ at different doping levels.

Far-from-Equilibrium Electron-Phonon Interactions in Optically Excited Graphene

Comprehending far-from-equilibrium many-body interactions is one of the major goals of current ultrafast condensed matter physics research. Here, a particularly interesting but barely understood situation occurs during a strong optical excitation, where the electron and phonon systems can be significantly perturbed and the quasiparticle distributions cannot be described with equilibrium functions. In this work, we use time- and angle-resolved photoelectron spectroscopy to study such far-from-equilibrium many-body interactions for the prototypical material graphene. In accordance with theoretical simulations, we find remarkable transient renormalizations of the quasiparticle self-energy caused by the photoinduced nonequilibrium conditions. These observations can be understood by ultrafast scatterings between nonequilibrium electrons and strongly coupled optical phonons, which signify the crucial role of ultrafast nonequilibrium dynamics on many-body interactions. Our results advance the understanding of many-body physics in extreme conditions, which is important for any endeavor to optically manipulate or create non-equilibrium states of matter.

Significant Phonon Drag Enables High Power Factor in the AlGaN/GaN Two-Dimensional Electron Gas

In typical thermoelectric energy harvesters and sensors, the Seebeck effect is caused by diffusion of electrons or holes in a temperature gradient. However, the Seebeck effect can also have a phonon drag component, due to momentum exchange between charge carriers and lattice phonons, which is more difficult to quantify. Here, we present the first study of phonon drag in the AlGaN/GaN two-dimensional electron gas (2DEG). We find that phonon drag does not contribute significantly to the thermoelectric behavior of devices with ∼100 nm GaN thickness, which suppresses the phonon mean free path. However, when the thickness is increased to ∼1.2 μm, up to 32% (88%) of the Seebeck coefficient at 300 K (50 K) can be attributed to the drag component. In turn, the phonon drag enables state-of-the-art thermoelectric power factor in the thicker GaN film, up to ∼40 mW m^-1 K^-2 at 50 K. By measuring the thermal conductivity of these AlGaN/GaN films, we show that the magnitude of the phonon drag can increase even when the thermal conductivity decreases. Decoupling of thermal conductivity and Seebeck coefficient could enable important advancements in thermoelectric power conversion with devices based on 2DEGs.

Electron-Phonon and Spin-Lattice Coupling in Atomically Thin Layers of MnBi2Te4

MnBi₂Te₄ represents a new class of magnetic topological insulators in which novel quantum phases emerge at temperatures higher than those found in magnetically doped thin films. Here, we investigate how couplings between electron, spin, and lattice are manifested in the phonon spectra of few-septuple-layer thick MnBi₂Te₄. After categorizing phonon modes by their symmetries, we study the systematic changes in frequency, line width, and line shape of a spectrally isolated A_1g mode. The electron-phonon coupling increases in thinner flakes as manifested in a broader phonon line width, which is likely due to changes of the electron density of states. In 4- and 5-septuple thick samples, the onset of magnetic order below the Néel temperature is concurrent with a transition to an insulating state. We observe signatures of a reduced electron-phonon scattering across this transition as reflected in the reduced Fano parameter. Finally, spin-lattice coupling is measured and modeled from temperature-dependent phonon frequency.

Electron-Phonon Coupling in a Magic-Angle Twisted-Bilayer Graphene Device from Gate-Dependent Raman Spectroscopy and Atomistic Modeling

The importance of phonons in the strong correlation phenomena observed in twisted-bilayer graphene (TBG) at the so-called magic-angle is under debate. Here we apply gate-dependent micro-Raman spectroscopy to monitor the G band line width in TBG devices of twist angles θ = 0° (Bernal), ∼1.1° (magic-angle), and ∼7° (large-angle). The results show a broad and p-/n-asymmetric doping behavior at the magic angle, in clear contrast to the behavior observed in twist angles above and below this point. Atomistic modeling reproduces the experimental observations in close connection with the joint density of electronic states in the electron-phonon scattering process, revealing how the unique electronic structure of magic-angle TBGs influences the electron-phonon coupling and, consequently, the G band line width. Overall, the value of the G band line width in magic-angle TBG is larger when compared to that of the other samples, in qualitative agreement with our calculations.

Strong Electron-Phonon Interaction in 2D Vertical Homovalent III-V Singularities

Highly polar materials are usually preferred over weakly polar ones to study strong electron-phonon interactions and its fascinating properties. Here, we report on the achievement of simultaneous confinement of charge carriers and phonons at the vicinity of a 2D vertical homovalent singularity (antiphase boundary, APB) in an (In,Ga)P/SiGe/Si sample. The impact of the electron-phonon interaction on the photoluminescence processes is then clarified by combining transmission electron microscopy, X-ray diffraction, ab initio calculations, Raman spectroscopy, and photoluminescence experiments. 2D localization and layer group symmetry properties of homovalent electronic states and phonons are studied by first-principles methods, leading to the prediction of a type-II band alignment between the APB and the surrounding semiconductor matrix. A Huang-Rhys factor of 8 is finally experimentally determined for the APB emission line, underlining that a large and unusually strong electron-phonon coupling can be achieved by 2D vertical quantum confinement in an undoped III-V semiconductor. This work extends the concept of an electron-phonon interaction to 2D vertically buried III-V homovalent nano-objects and therefore provides different approaches for material designs, vertical carrier transport, heterostructure design on silicon, and device applications with weakly polar semiconductors.

Resolving voltage-time dilemma using an atomic-scale lever of subpicosecond electron-phonon interaction

Nanoelectronic memory based on trapped charge need to be small and fast, but fundamentally it faces a voltage-time dilemma because the requirement of a high-energy barrier for data retention under zero/low electrical stimuli is incompatible with the demand of a low-energy barrier for fast switching under a modest programming voltage. One solution is to embed an atomic-level lever of localized electron-phonon interaction to autonomously reconfigure trap-site's barrier in accordance to the electron-occupancy of the site. Here we demonstrate an atomically levered resistance-switching memory built on locally flexible amorphous nanometallic thin films: charge detrapping can be triggered by a mechanical force, the fastest one being a plasmonic Lorentz force induced by a nearby electron or positron bunch passing in 10(-13) s. The observation provided the first real-time evidence of an electron-phonon interaction in action, which enables nanometallic memory to turn on at a subpicosecond speed yet retain long-term memory, thus suitable for universal memory and other nanoelectron applications.

Entangled States Induced by Electron-Phonon Interaction in Two-Dimensional Materials

We report on the effects of electron-phonon interaction in materials such as graphene, showing that it enables the formation of a gap bridged by unique edge states. These states exhibit a distinctive locking among propagation direction, valley, and phonon mode, allowing for the generation of electron-phonon entangled states whose parts can be easily split. We discuss the effect of the chiral atomic motion in the zone boundary phonons leading to this effect. Our findings shed light on how to harness these unconventional states in quantum research.

Phase Transition-Induced Temperature-Dependent Phonon Shifts in Molybdenum Disulfide Monolayers Interfaced with a Vanadium Dioxide Film

We report the optical phonon shifts induced by phase transition effects of vanadium dioxide (VO₂) in monolayer molybdenum disulfide (MoS₂) when interfacing with a VO₂ film showing a metal-insulator transition coupled with structural phase transition (SPT). To this end, the monolayer MoS₂ directly synthesized on a SiO₂/Si substrate by chemical vapor deposition was first transferred onto a VO₂/c-Al₂O₃ substrate in which the VO₂ film was prepared by a sputtering method. We compared the MoS₂ interfaced with the VO₂ film with the as-synthesized MoS₂ by using Raman spectroscopy. The temperature-dependent Raman scattering characteristics exhibited the distinct phonon behaviors of the E_2g¹ and A_1g modes in the monolayer MoS₂. Specifically, for the as-synthesized MoS₂, there were no Raman shifts for each mode, but the enhancement in the Raman intensities of E_2g¹ and A_1g modes was clearly observed with increasing temperature, which could be interpreted by the significant contribution of the interface optical interference effect. In contrast, the red-shifts of both the E_2g¹ and A_1g modes for the MoS₂ transferred onto VO₂ were clearly observed across the phase transition of VO₂, which could be explained in terms of the in-plane tensile strain effect induced by the SPT and the enhancement of electron-phonon interactions due to an increased electron density at the MoS₂/VO₂ interface through the electronic phase transition. This study provides further insights into the influence of interfacial hybridization for the heterogeneous integration of 2D transition-metal dichalcogenides and strongly correlated materials.

Coherent Phonon Manipulation via Electron-Phonon Interaction for Facilitated Relaxation of Metastable Centers in ZnO

Methods that allow versatile manipulation of metastable centers in semiconductors are highly important owing to their potential for quantum information processing and computations. In this study, we demonstrate that the electron-phonon interaction enables phonon participation to promote relaxation of metastable centers in ZnO, which is known for its persistent photoconductivity (PPC) effect. Experimentally, we show that continuous infrared (IR) radiation (1064 nm, ∼30 mW/cm2) promotes longitudinal optical phonons via the Fröhlich interaction and increases the PPC relaxation rate by ∼4 folds. More importantly, we discover that coherent phonons activated by an ultrashort pulse IR laser of the same power increased the relaxation rate by ∼1200-fold, as confirmed by ultrafast transient spectroscopy to be correlated to the excitation of coherent acoustic phonons via the inverse piezoelectric effect. We expect this study to provide valuable guidance for the development of novel quantum and photoactive devices.

Robust Electronic Structure of Manganite-Buffered Oxide Interfaces with Extreme Mobility Enhancement

The electronic structure as well as the mechanism underlying the high-mobility two-dimensional electron gases (2DEGs) at complex oxide interfaces remain elusive. Herein, using soft X-ray angle-resolved photoemission spectroscopy (ARPES), we present the band dispersion of metallic states at buffered LaAlO₃/SrTiO₃ (LAO/STO) heterointerfaces where a single-unit-cell LaMnO₃ (LMO) spacer not only enhances the electron mobility but also renders the electronic structure robust toward X-ray radiation. By tracing the evolution of band dispersion, orbital occupation, and electron-phonon interaction of the interfacial 2DEG, we find unambiguous evidence that the insertion of the LMO buffer strongly suppresses both the formation of oxygen vacancies as well as the electron-phonon interaction on the STO side. The latter effect makes the buffered sample different from any other STO-based interfaces and may explain the maximum mobility enhancement achieved at buffered oxide interfaces.

Strong Intervalley Scattering-Induced Renormalization of Electronic and Thermal Transport Properties and Selection Rule Analysis in 2D Tellurium

The electron-phonon interaction (EPI) and phonon-phonon interactions are ubiquitous in promising two-dimensional (2D) semiconductors, determining both electronic and thermal transport properties. In this work, based on ab initio calculations, the effects of intervalley scattering on EPI and higher-order four-phonon interactions of α-Te and β-Te are investigated. Through the proposed selection rules for scattering channels and calculations of full electron-phonon scattering rates, we demonstrate that multiple nearly degenerate local valleys/peaks produce more scattering channels, resulting in stronger intervalley scattering over intravalley scattering. The lattice thermal conductivities of α-Te and β-Te are decreased by as much as 10.9% and 30.8% by considering EPI under the carrier concentration of 2 × 1013 cm-2 (n-type) at 300 K compared to those limited by three-phonon scattering, respectively. However, when further considering four-phonon scattering, EPI reduces the lattice thermal conductivities by 2.6% and 19.4% for α-Te and β-Te, respectively. Furthermore, it is revealed that the four-phonon interaction is more dominant in phonon transport for α-Te than that for β-Te due to the presence of an acoustic-optical phonon gap in α-Te. Finally, we demonstrate strong intervalley scattering induces significant renormalization effects from EPI on all the constituent parameters of thermoelectric performance. Our results show the contributions of intervalley scattering to the electronic properties as well as thermal transport properties in band-convergent thermoelectric materials are essential and highlight the potential of monolayer tellurium as a promising candidate for advanced thermoelectric applications.

Phonon State Tomography of Electron Correlation Dynamics in Optically Excited Solids

We introduce phonon state tomography (PST) as a diagnostic probe of electron dynamics in solids whose phonons are optically excited by a laser pulse at initial time. Using a projected-purified matrix-product states algorithm, PST decomposes the exact correlated electron-phonon wavefunction into contributions from purely electronic states corresponding to statistically typical configurations of the optically accessible phononic response, enabling a "tomographic" reconstruction of the electronic dynamics generated by the phonons. Thus, PST may be used to diagnose electronic behavior in experiments that access only the phonon response, such as thermal diffuse X-ray and electron scattering. We study the dynamics of a metal whose infrared phonons are excited by an optical pulse at initial time and use it to simulate the sample-averaged momentum-resolved phonon occupancy and accurately reconstruct the electronic correlations. We also use PST to analyze the influence of different pulse shapes on the light-induced enhancement and suppression of electronic correlations.

Photoinduced Fröhlich Interaction-Driven Distinct Electron- and Hole-Polaron Behaviors in Hybrid Organic-Inorganic Perovskites by Ultrafast Terahertz Probes

The formation of large polarons resulting from the Fröhlich coupling of photogenerated carriers with the polarized crystal lattice is considered crucial in shaping the outstanding optoelectronic properties in hybrid organic-inorganic perovskite crystals. Until now, the initial polaron dynamics after photoexcitation have remained elusive in the hybrid perovskite system. Here, based on the terahertz time-domain spectroscopy and optical-pump terahertz probe, we access the nature of interplay between photoexcited unbound charge carriers and optical phonons in MAPbBr3 within the initial 5 ps after excitation and have demonstrated the simultaneous existence of both electron- and hole-polarons, together with the photogenerated carrier dynamic process. Two resonant peaks in the frequency-dependent photoconductivity are interpreted by the Drude-Smith-Lorentz model along with the ab initio excitation calculation, revealing that the electron-/hole-polaron is related to the vibration modes of the stretched/contracted Pb-Br bond. The red /blue shift of the corresponding peaks as the fingerprints of electron-/hole-polaron provides a channel for observing their dynamic behavior. Different from polarons with long lifetime (>300 ps) in single-crystalline grains, we observed in thin films the transient process from the formation to the dissociation of polarons occurring at timescales within ∼5 ps, resulting from the Mott phase transition for carriers at high concentrations. Moreover, the observation of the polaron dynamic process of the virtual state-assisted band gap transition (800 nm excitation) further reveals the competition of carriers cooling and polaron formation with photocarrier density. Our observations demonstrate a strategy for direct observation and manipulation of bipolar polaron transport in hybrid perovskites.