Evaluation of the X-ray/EUV Nanolithography Facility at AS through wavefront propagation simulations

Synchrotron light sources can provide the required spatial coherence, stability and control to support the development of advanced lithography at the extreme ultraviolet and soft X-ray wavelengths that are relevant to current and future fabricating technologies. Here an evaluation of the optical performance of the soft X-ray (SXR) beamline of the Australian Synchrotron (AS) and its suitability for developing interference lithography using radiation in the 91.8 eV (13.5 nm) to 300 eV (4.13 nm) range are presented. A comprehensive physical optics model of the APPLE-II undulator source and SXR beamline was constructed to simulate the properties of the illumination at the proposed location of a photomask, as a function of photon energy, collimation and monochromator parameters. The model is validated using a combination of experimental measurements of the photon intensity distribution of the undulator harmonics. It is shown that the undulator harmonics intensity ratio can be accurately measured using an imaging detector and controlled using beamline optics. Finally, the photomask geometric constraints and achievable performance for the limiting case of fully spatially coherent illumination are evaluated.

Promotion of Plasma-Induced Deuterium Uptake in Ruthenium Films by Monolayer-Thick Tin Layers

Surface impurities can have a significant influence on hydrogen uptake of materials. Examples such as the hydrogen spillover effect demonstrate that even very small surface impurity quantities can lead to order-of-magnitude changes in the total amount of hydrogen taken up by a material. In this work, we report the first experimental demonstration of promoted deuterium uptake in Ru thin films by Sn. Deuterium plasma exposures were carried out for Ru-capped targets covered by Sn up to a few atoms in thickness. After the exposure, the residual Sn content and the deuterium retention were measured to quantify the Sn etching and the deuterium uptake, respectively. By increasing the amount of Sn from zero to one atomic layer on Ru, we found after the exposure that the Sn content stays unchanged while the deuterium uptake rate severely increases with the Sn content by 2-3 orders of magnitude. These results can be understood by simulations using a reaction-diffusion model with multiple surface species and the lateral surface migration of deuterium. By contrast, as the as-deposited Sn content goes above one atomic layer, Sn removal takes place, and the deuterium uptake rate decreases with the as-deposited Sn content. Possible explanations are proposed by considering the interplay between Sn etching and deuterium uptake. In all, this work provides insights into interactions between multiple surface species in relation to plasma-induced hydrogen uptake. By further development, this could eventually lead to a potential mitigation method to circumvent the promoted hydrogen uptake in Ru-capped films.

Sulfonium-Functionalized Polystyrene-Based Nonchemically Amplified Resists Enabling Sub-13 nm Nanolithography

Nonchemically amplified resists based on triphenyl sulfonium triflate-modified polystyrene (PSTS) were prepared by a facile method of modification of polystyrene with sulfonium groups. The uploading of the sulfonium group can be well-controlled by changing the feed ratio of raw materials, resulting in PSTS_0.5 and PSTS_0.7 resists with sulfonium ratios of 50 and 70%, respectively. The optimum developer (methyl isobutyl ketone/ethanol = 1:7) is obtained by analyzing contrast curves of electron beam lithography (EBL). PSTS_0.7 exhibits a better resolution (18 nm half-pitch (HP)) than the PSTS_0.5 resist (20 nm HP) at the same developing conditions for EBL. This novel resist platform was further evaluated by extreme ultraviolet lithography, and patterning performance down to 13 nm HP at a dose of 186 mJ cm^-2 with a line edge roughness of 2.8 nm was achieved. Our detailed study of the reaction and patterning mechanism suggests that the decomposition of the polar triflate and triphenyl sulfonium groups into nonpolar sulfide or polystyrene plays an important role in the solubility switch.

High-Resolution Lithographic Patterning with Organotin Films: Role of CO2 in Differential Dissolution Rates

Details of the chemistry enabling the patterning of organotin photoresists to single-digit-nm resolution continue to engage study. In this report, we examine the contributions of atmospheric gases to the differential dissolution rates of an n-butyltin oxide hydroxide photoresist. Cryo scanning tunneling electron microscopy (cryo-STEM) produces a micrograph of the latent image of an irradiated resist film, readily distinguishing exposed and unexposed regions. Temperature-programmed desorption mass spectrometry (TPD-MS) and cryo electron energy loss spectroscopy (cryo-EELS) show that irradiated films are depleted in carbon through desorption of butane and butene. Upon aging in air, irradiated films absorb H₂O, as previously established. TPD-MS also reveals a previously unrecognized absorption of CO₂, which correlates to a heightened dissolution contrast. This absorption may play an active role in determining intrinsic patterning performance and its variability based on changes in atmospheric-gas composition.

Depth-resolved compositional analysis of W/B4C multilayers using resonant soft X-ray reflectivity

W/B₄C multilayers (MLs) consisting of ten layer pairs with varying boron carbide layer thicknesses have been investigated. The ML structures were characterized using grazing-incidence hard X-ray reflectivity (GIXR), resonant soft X-ray reflectivity (RSXR), hard X-ray photoelectron spectroscopy (HAXPES) and X-ray absorption near-edge spectroscopy (XANES). Depth-resolved spectroscopic information on the boron carbide layer in W/B₄C MLs was extracted with sub-nanometre resolution using reflectivity performed in the vicinity of the B K-edge. Interestingly, these results show that the composition of boron carbide films is strongly dependent on layer thicknesses. HAXPES measurements suggest that most of the boron is in the chemical state of B₄C in the multilayer structures. XANES measurements suggest an increase in boron content and C-B-C bonding with increase in boron carbide layer thickness.

Effect of Oxygen on Thermal and Radiation-Induced Chemistries in a Model Organotin Photoresist

Organotin photoresists have shown promise for next-generation lithography because of their high extreme ultraviolet (EUV) absorption cross sections, their radiation sensitive chemistries, and their ability to enable high-resolution patterning. To better understand both temperature- and radiation-induced reaction mechanisms, we have studied a model EUV photoresist, which consists of a charge-neutral butyl-tin cluster. Temperature-programmed desorption (TPD) showed very little outgassing of the butyl-tin resist in ultrahigh vacuum and excellent thermal stability of the butyl groups. TPD results indicated that decomposition of the butyl-tin resist was first order with a fairly constant decomposition energy between 2.4 and 3.0 eV, which was determined by butyl group desorption. Electron-stimulated desorption (ESD) showed that butyl groups were the primary decomposition product for electron kinetic energies expected during EUV exposures. X-ray photoelectron spectroscopy was performed before and after low-energy electron exposure to evaluate the compositional and chemical changes in the butyl-tin resists after interaction with radiation. The effect of molecular oxygen during ESD experiments was evaluated, and it was found to enhance butyl group desorption during exposure and resulted in a significant increase in the ESD cross section by over 20%. These results provide mechanistic information that can be applied to organotin EUV photoresists, where a significant increase in photoresist sensitivity may be obtained by varying the ambient conditions during EUV exposures.

Resist Materials for Extreme Ultraviolet Lithography: Toward Low-Cost Single-Digit-Nanometer Patterning

Extreme ultraviolet lithography (EUVL) is the leading technology for enabling miniaturization of computational components over the next decade. Next-generation resists will need to meet demanding performance criteria of 10 nm critical dimension, 1.2 nm line-edge roughness, and 20 mJ cm(-2) exposure dose. Here, the current state of the development of EUV resist materials is reviewed. First, pattern formation in resist materials is described and the Hansen solubility sphere (HSS) is used as a framework for understanding the pattern-development process. Then, recent progress in EUVL resist chemistry and characterization is discussed. Incremental advances are obtained by transferring chemically amplified resist materials developed for 193 nm lithography to EUV wavelengths. Significant advances will result from synthesizing high-absorbance resist materials using heavier atoms. In the framework of the HSS model, these materials have significant room for improvement and thus offer great promise as high-performance EUV resists for patterning of sub-10 nm features.