High-Performance Potassium-Selective Biosensor Platform Based on Resistive Coupling of a-IGZO Coplanar-Gate Thin-Film Transistor

The potassium (K⁺) ion is an essential mineral for balancing body fluids and electrolytes in biological systems and regulating bodily function. It is associated with various disorders. Given that it exists at a low concentration in the human body and should be maintained at a precisely stable level, the development of highly efficient potassium-selective sensors is attracting considerable interest in the healthcare field. Herein, we developed a high-performance, potassium-selective field-effect transistor-type biosensor platform based on an amorphous indium gallium zinc oxide coplanar-gate thin-film transistor using a resistive coupling effect with an extended gate containing a potassium-selective membrane. The proposed sensor can detect potassium in KCl solutions with a high sensitivity of 51.9 mV/dec while showing a low sensitivity of <6.6 mV/dec for NaCl, CaCl₂, and pH buffer solutions, indicating its high selectivity to potassium. Self-amplification through the resistive-coupling effect enabled an even greater potassium sensitivity of 597.1 mV/dec. Additionally, we ensured the stability and reliability of short- and long-term detection through the assessment of non-ideal behaviors, including hysteresis and drift effects. Therefore, the proposed potassium-sensitive biosensor platform is applicable to high-performance detection in a living body, with high sensitivity and selectivity for potassium.

Highly Sensitive and Transparent Urea-EnFET Based Point-of-Care Diagnostic Test Sensor with a Triple-Gate a-IGZO TFT

In this study, we propose a highly sensitive transparent urea enzymatic field-effect transistor (EnFET) point-of-care (POC) diagnostic test sensor using a triple-gate amorphous indium gallium zinc oxide (a-IGZO) thin-film pH ion-sensitive field-effect transistor (ISFET). The EnFET sensor consists of a urease-immobilized tin-dioxide (SnO₂) sensing membrane extended gate (EG) and an a-IGZO thin film transistor (TFT), which acts as the detector and transducer, respectively. To enhance the urea sensitivity, we designed a triple-gate a-IGZO TFT transducer with a top gate (TG) at the top of the channel, a bottom gate (BG) at the bottom of the channel, and a side gate (SG) on the side of the channel. By using capacitive coupling between these gates, an extremely high urea sensitivity of 3632.1 mV/pUrea was accomplished in the range of pUrea 2 to 3.5; this is 50 times greater than the sensitivities observed in prior works. High urea sensitivity and reliability were even obtained in the low pUrea (0.5 to 2) and high pUrea (3.5 to 5) ranges. The proposed urea-EnFET sensor with a triple-gate a-IGZO TFT is therefore expected to be useful for POC diagnostic tests that require high sensitivity and high reliability.

Fully Transparent and Sensitivity-Programmable Amorphous Indium-Gallium-Zinc-Oxide Thin-Film Transistor-Based Biosensor Platforms with Resistive Switching Memories

This paper presents a fully transparent and sensitivity-programmable biosensor based on an amorphous-indium-gallium-zinc-oxide (a-IGZO) thin-film transistor (TFT) with embedded resistive switching memories (ReRAMs). The sensor comprises a control gate (CG) and a sensing gate (SG), each with a resistive switching (RS) memory connected, and a floating gate (FG) that modulates the channel conductance of the a-IGZO TFT. The resistive coupling between the RS memories connected to the CG and SG produces sensitivity properties that considerably exceed the limit of conventional ion-sensitive field-effect transistor (ISFET)-based sensors. The resistances of the embedded RS memories were determined by applying a voltage to the CG-FG and SG-FG structures independently and adjusting the compliance current. Sensors constructed using RS memories with different resistance ratios yielded a pH sensitivity of 50.5 mV/pH (R_CG:R_SG = 1:1), 105.2 mV/pH (R_CG:R_SG = 2:1), and 161.9 mV/pH (R_CG:R_SG = 3:1). Moreover, when the R_CG:R_SG = 3:1, the hysteresis voltage width (V_H) and drift rate were 54.4 mV and 32.9 mV/h, respectively. As the increases in V_H and drift rate are lower than the amplified sensitivity, the sensor performs capably. The proposed device is viable as a versatile sensing device capable of detecting various substances, such as cells, antigens, DNA, and gases.

Design and Implementation of a pH Sensor for Micro Solution Based on Nanostructured Ion-Sensitive Field-Effect Transistor

pH sensors based on a nanostructured ion-sensitive field-effect transistor have characteristics such as fast response, high sensitivity and miniaturization, and they have been widely used in biomedicine, food detection and disease monitoring. However, their performance is affected by many factors, such as gate dielectric material, channel material and channel thickness. In order to obtain a pH sensor with high sensitivity and fast response, it is necessary to determine the appropriate equipment parameters, which have high processing cost and long production time. In this study, a nanostructured ion-sensitive field-effect transistor was developed based on the SILVACO technology computer-aided design (TCAD) simulator. Through experiments, we analyzed the effects of the gate dielectric material, channel material and channel thickness on the electrical characteristics of the nanostructured field-effect transistor. Based on simulation results, silicon nitride was selected as the gate dielectric layer, while indium oxide was chosen as the channel layer. The structure and parameters of the dual channel ion-sensitive field-effect transistor were determined and discussed in detail. Finally, according to the simulation results, a pH sensor based on the nanostructured ion-sensitive field-effect transistor was fabricated. The accuracy of simulation results was verified by measuring the output, transfer and pH characteristics of the device. The fabricated pH sensor had a subthreshold swing as low as 143.19 mV/dec and obtained an actual sensitivity of 88.125 mV/pH. In addition, we also tested the oxidation reaction of hydrogen peroxide catalyzed by horseradish peroxidase, and the sensitivity was up to 144.26 pA mol⁻¹ L⁻¹, verifying that the ion-sensitive field-effect transistor (ISFET) can be used to detect the pH of micro solution, and then combine the enzyme-linked assay to detect the concentration of protein, DNA, biochemical substances, biomarkers, etc.

Induced Proton Dynamics on Semiconductor Surfaces for Sensing Tight Junction Formation Enhanced by an Extracellular Matrix and Drug

In the fields of tissue engineering and drug discovery, confirming the formation and maturation of epithelial cell tight junctions (TJs), which are necessary for blocking pathogenic invasion and absorption of nutrients and ions, at a high spatiotemporal resolution is essential. We previously developed a system of monitoring pH perturbation induced by weak acid exposure to cells cultured on an ion-sensitive field-effect transistor that enables a sensitive and specific detection of biomembrane injuries and TJ breakdowns caused by external stimuli such as nanomaterials and cytotoxins. In this study, we monitor time-lapse changes in the paracellular diffusion of growing epithelial cell monolayers using the pH perturbation assay as well as conventional permeability and trans-epithelial electrical resistance assays. The effects of the extracellular matrix and a TJ potentiator (KN-93) on epithelial TJ formation are evaluated. TJ formations were promoted on the substrate coated with Matrigel more than on the one coated with poly(l-lysine). KN-93 accelerated TJ formations in a dose-dependent manner. The pH perturbation assay denoted a longer incubation time for the completion of TJ formation compared with the conventional assays under the same conditions. Importantly, the pH perturbation assay is able to rigorously evaluate TJ formation, as the assay uses protons as the smallest indicator for detecting paracellular gaps, and the pH perturbation is specific to TJ alterations. These features for in vitro TJ evaluation using proton dynamics are advantageous for applications in tissue engineering and drug development.

Molecular-Charge-Contact-Based Ion-Sensitive Field-Effect Transistor Sensor in Microfluidic System for Protein Sensing

In this paper, we demonstrate the possibility of direct protein sensing beyond the Debye length limit using a molecular-charge-contact (MCC)-based ion-sensitive field-effect transistor (ISFET) sensor combined with a microfluidic device. Different from the MCC method previously reported, biotin-coated magnetic beads are set on the gate insulator of an ISFET using a button magnet before the injection of target molecules such as streptavidin. Then, the streptavidin—a biotin interaction, used as a model of antigen—antibody reaction is expected at the magnetic beads/gate insulator nanogap interface, changing the pH at the solution/dielectric interface owing to the weak acidity of streptavidin. In addition, the effect of the pH or ionic strength of the measurement solutions on the electrical signals of the MCC-based ISFET sensor is investigated. Furthermore, bound/free (B/F) molecule separation with a microfluidic device is very important to obtain an actual electrical signal based on the streptavidin–biotin interaction. Platforms based on the MCC method are suitable for exploiting the advantages of ISFETs as pH sensors, that is, direct monitoring systems for antigen–antibody reactions in the field of in vitro diagnostics.

Improved sensing characteristics of dual-gate transistor sensor using silicon nanowire arrays defined by nanoimprint lithography

This work describes the construction of a sensitive, stable, and label-free sensor based on a dual-gate field-effect transistor (DG FET), in which uniformly distributed and size-controlled silicon nanowire (SiNW) arrays by nanoimprint lithography act as conductor channels. Compared to previous DG FETs with a planar-type silicon channel layer, the constructed SiNW DG FETs exhibited superior electrical properties including a higher capacitive-coupling ratio of 18.0 and a lower off-state leakage current under high-temperature stress. In addition, while the conventional planar single-gate (SG) FET- and planar DG FET-based pH sensors showed the sensitivities of 56.7 mV/pH and 439.3 mV/pH, respectively, the SiNW DG FET-based pH sensors showed not only a higher sensitivity of 984.1 mV/pH, but also a lower drift rate of 0.8% for pH-sensitivity. This demonstrates that the SiNW DG FETs simultaneously achieve high sensitivity and stability, with significant potential for future biosensing applications.

A new era of semiconductor genetics using ion-sensitive field-effect transistors: the gene-sensitive integrated cell

Semiconductor genetics is now disrupting the field of healthcare owing to the rapid parallelization and scaling of DNA sensing using ion-sensitive field-effect transistors (ISFETs) fabricated using commercial complementary metal -oxide semiconductor technology. The enabling concept of DNA reaction monitoring introduced by Toumazou has made this a reality and we are now seeing relentless scaling with Moore's law ultimately achieving the $100 genome. In this paper, we present the next evolution of this technology through the creation of the gene-sensitive integrated cell (GSIC) for label-free real-time analysis based on ISFETs. This device is derived from the traditional metal-oxide semiconductor field-effect transistor (MOSFET) and has electrical performance identical to that of a MOSFET in a standard semiconductor process, yet is capable of incorporating DNA reaction chemistries for applications in single nucleotide polymorphism microarrays and DNA sequencing. Just as application-specific integrated circuits, which are developed in much the same way, have shaped our consumer electronics industry and modern communications and memory technology, so, too, do GSICs based on a single underlying technology principle have the capacity to transform the life science and healthcare industries.

Ion-sensitive field-effect transistor for biological sensing

In recent years there has been great progress in applying FET-type biosensors for highly sensitive biological detection. Among them, the ISFET (ion-sensitive field-effect transistor) is one of the most intriguing approaches in electrical biosensing technology. Here, we review some of the main advances in this field over the past few years, explore its application prospects, and discuss the main issues, approaches, and challenges, with the aim of stimulating a broader interest in developing ISFET-based biosensors and extending their applications for reliable and sensitive analysis of various biomolecules such as DNA, proteins, enzymes, and cells.