ProLEED Studio: software for modeling low-energy electron diffraction patterns

Low-energy electron diffraction patterns contain precise information about the structure of the surface studied. However, retrieving the real space lattice periodicity from complex diffraction patterns is challenging, especially when the modeled patterns originate from superlattices with large unit cells composed of several symmetry-equivalent domains without a simple relation to the substrate. This work presents ProLEED Studio software, built to provide simple, intuitive and precise modeling of low-energy electron diffraction patterns. The interactive graphical user interface allows real-time modeling of experimental diffraction patterns, change of depicted diffraction spot intensities, visualization of different diffraction domains, and manipulation of any lattice points or diffraction spots. The visualization of unit cells, lattice vectors, grids and scale bars as well as the possibility of exporting ready-to-publish models in bitmap and vector formats significantly simplifies the modeling process and publishing of results.

Evidence of sp2-like Hybridization of Silicon Valence Orbitals in Thin and Thick Si Grown on α-Phase Si(111)√3 × √3R30°-Bi

One-monolayer (ML) (thin) and 5-ML (thick) Si films were grown on the α-phase Si(111)√3 × √3R30°-Bi at a low substrate temperature of 200 °C. Si films have been studied in situ by reflection electron energy loss spectroscopy (REELS) and Auger electron spectroscopy, as a function of the electron beam incidence angle α and low-energy electron diffraction (LEED), as well as ex situ by grazing incidence X-ray diffraction (GIXRD). Scanning tunneling microscopy (STM), and scanning tunneling spectroscopy (STS) were also reported. The REELS spectra, taken at the Si K absorption edge (~1.840 KeV), reveal the presence of two distinct loss structures attributed to transitions 1s→π* and 1s→σ* according to their intensity dependence on α, attesting to the sp²-like hybridization of the silicon valence orbitals in both thin and thick Si films. The synthesis of a silicon allotrope on the α-phase of Si(111)√3 × √3R30°-Bi substrate was demonstrated by LEED patterns and GIXRD that discloses the presence of a Si stack of 3.099 (3) Å and a √3 × √3 unit cell of 6.474 Å, typically seen for multilayer silicene. STM and STS measurements corroborated the findings. These measurements provided a platform for the new √3 × √3R30° Si allotrope on a Si(111)√3 × √3 R30°-Bi template, paving the way for realizing topological insulator heterostructures from different two-dimensional materials, Bi and Si.

Epitaxial Molybdenum Disulfide/Gallium Nitride Junctions: Low-Knee-Voltage Schottky-Diode Behavior at Optimized Interfaces

Low turn-on (knee) voltage (∼0.3 V) Schottky-diode behavior of a four-layer (4L) MoS₂/GaN junction is achieved by optimizing the in situ interface preparation of the GaN substrate prior to MoS₂ overlayer growth in a vacuum system using metallic molybdenum and hydrogen sulfide gas as precursors. The process leads to a clean nitrogen-terminated GaN surface that bonds well to the MoS₂ film revealing a 2 × 2 reconstruction at the interface observed in low-energy electron diffraction (LEED). Atomic force microscopy and X-ray photoelectron spectroscopy provide clear images of the GaN terraces through the MoS₂ overlayer confirming close adhesion and absence of oxygen and other contaminants. Density functional theory calculations predict the formation of the 2 × 2 superstructure at a clean interface. Transport measurements show diode behavior at an on/off ratio of ∼10⁵ for ±1 V with a forward direction for the positive voltage applied to the MoS₂ layer. Combining transport and photoelectron spectroscopy measurements with theory, we deduce a Fermi-level position in the MoS₂ gap consistent with interface charge transfer from MoS₂ to the substrate. The high performance of the MoS₂/Gan diode highlights the technological potential of devices based on GaN/MoS₂ interfaces.

Role of Surface Termination in the Metal-Insulator Transition of V2O3(0001) Ultrathin Films

Surface termination is known to play an important role in determining the physical properties of materials. It is crucial to know how surface termination affects the metal-insulator transition (MIT) of V₂O₃ films for both fundamental understanding and its applications. By changing growth parameters, we achieved a variety of surface terminations in V₂O₃ films that are characterized by low-energy electron diffraction (LEED) and photoemission spectroscopy techniques. Depending upon the terminations, our results show that MIT can be partially or fully suppressed near the surface region due to the different fillings of the electrons at the surface and subsurface layers and the change of screening length compared to the bulk. Across MIT, a strong redistribution of spectral weight and its transfer from a high-to-low-binding energy regime is observed in a wide energy scale. Our results show that the total spectral weight in the low-energy regime is not conserved across MIT, indicating a breakdown of the "sum rules of spectral weight", signature of a strongly correlated system. Such a change in spectral weight is possibly linked to the change in hybridization, lattice volume (i.e., effective carrier density), and the spin degree of freedom in the system that occurs across MIT. We find that MIT in this system is strongly correlation-driven, where the electron-electron interactions play a pivotal role. Moreover, our results provide better insight into the understanding of the electronic structure of strongly correlated systems and highlight the importance of accounting for surface effects during interpretation of the physical property data mainly using surface-sensitive probes, such as surface resistivity.

Exotic Long-Range Surface Reconstruction on La0.7Sr0.3MnO3 Thin Films

Due to an extremely diverse phase space, La_1-xSr_xMnO₃, as with other manganites, offers a wide range of tunability and applications including colossal magnetoresistance and use as spin-polarized electrodes. Here, we study an unprecedented, exotic surface reconstruction (6 × 6) in La_1-xSr_xMnO₃ (x = 0.3) observed via low-energy electron diffraction (LEED). Scanning tunneling microscopy (STM) shows the surface is relatively flat, with unit-cell step heights, and X-ray photoelectron spectroscopy (XPS) reveals a strong degree of Sr segregation at the surface. By combining electron diffraction and first-principles computations, we propose that the long-range surface reconstruction consists of a Sr-segregated surface with La (6 × 6) ordering. This study expands our understanding of manganite systems and underscores their ability to form interesting surface reconstructions, driven largely by cation segregation that can potentially be controlled for tuning surface ordering.

Visualization of the Borazine Core of B3N3-Doped Nanographene by STM

Electronic interface properties and the initial growth of hexa-peri-hexabenzocoronene with a borazine core (BN-HBC) on Au(111) have been studied by using X-ray photoelectron spectroscopy (XPS), low-energy electron diffraction (LEED), and scanning tunneling microscopy (STM). A weak, but non-negligible, interaction between BN-HBC and Au(111) was found at the interface. Both hexa-peri-hexabenzocoronene (HBC) and BN-HBC molecules form well-defined monolayers. The different contrast in STM images of HBC and BN-HBC at different tunneling voltages with submolecular resolution can be ascribed to differences in the local density of states (LDOS). At positive and negative tunneling voltages, STM images reproduce the distribution of the highest occupied and lowest unoccupied molecular orbitals (HOMO and LUMO) as determined by density functional theory (DFT) calculations very well.

Pure and mixed ordered monolayers of tetracyano-2,6-naphthoquinodimethane and hexathiapentacene on the Ag(100) surface

We report on mixed ordered monolayers of the electron acceptor-type molecule tetracyano-2,6-naphthoquinodimethane (TNAP) and the electron donor-type molecule hexathiapentacene (HTPEN). This investigation was motivated by the general question which type of mixed stoichiometric structures are formed on a surface by molecules that are otherwise typically used for the synthesis of bulk charge-transfer materials. The layers were obtained by vacuum deposition on the Ag(100) surface and analyzed by low-energy electron diffraction (LEED) and scanning tunneling microscopy (STM). The formation of the mixed structure occurs spontaneously. An important motif for the structure formation is given by hydrogen bonds between the TNAP molecules. Both molecules, TNAP and HTPEN also form well-ordered monolayers on the Ag(100) surface on their own. In all structures, the molecules are adsorbed in a planar orientation on the surface. We discuss the influence of intermolecular charge transfer on the ordering in the mixed structure.

Structure, Morphology and Reducibility of Epitaxial Cerium Oxide Ultrathin Films and Nanostructures

Cerium oxide is a very interesting material that finds applications in many different fields, such as catalysis, energy conversion, and biomedicine. An interesting approach to unravel the complexity of real systems and obtain an improved understanding of cerium oxide-based materials is represented by the study of model systems in the form of epitaxial ultrathin films or nanostructures supported on single crystalline substrates. These materials often show interesting novel properties, induced by spatial confinement and by the interaction with the supporting substrate, and their understanding requires the use of advanced experimental techniques combined with computational modeling. Recent experimental and theoretical studies performed within this field are examined and discussed here, with emphasis on the new perspectives introduced in view of the optimization of cerium oxide-based materials for application in different fields.

Buckled germanene formation on Pt(111)

Germanene, a 2D honeycomb lattice analogous to graphene, is fabricated on a Pt(111) surface. It exhibits a buckled configuration with a (3 × 3) superlattice coinciding with the substrate's (√19 × √19) superstructure. Covalent bonds exist throughout the germanene layer. The resulting high-quality germanene enables researchers to explore the fundamentals of germanene and its potential applications.

Smooth growth of organic semiconductor films on graphene for high-efficiency electronics

High-quality thin films of conjugated molecules with smooth interfaces are important to assist the advent of organic electronics. Here, we report on the layer-by-layer growth of the organic semiconductor molecule p-sexiphenyl (6P) on the transparent electrode material graphene. Low energy electron microscopy and micro low energy electron diffraction reveal the morphological and structural evolution of the thin film. The layer-by-layer growth of 6P on graphene proceeds by subsequent adding of {111} layers.