Suppression of Randomness in Electrically Pumped Random Lasing from a ZnO Film-Based Light-Emitting Device on Silicon

We report on the suppressed randomness in electrically pumped random lasing (RL) from a light-emitting device (LED) based on a metal-insulator-semiconductor (MIS) structure of Au/SiOx (x < 2)/ZnO on a silicon substrate, by means of patterning the light-emitting ZnO polycrystalline film into a number of square blocks separated by streets that are filled with the SiOx insulator. It is found that the RL modes can be remarkably reduced by shrinking the blocks in the absence of interblock optical coupling. Meanwhile, with the imposition of interblock optical coupling by shrinking the streets, the RL modes can be further reduced, and more importantly, the strongest mode wavelength is stabilized around 380 nm, where the ZnO film exhibits the largest optical gain.

Theory and Simulation of Metal-Insulator-Semiconductor (MIS) Photoelectrodes

A metal-insulator-semiconductor (MIS) structure is an attractive photoelectrode-catalyst architecture for promoting photoelectrochemical reactions, such as the formation of H₂ by proton reduction. The metal catalyzes the generation of H₂ using electrons generated by photon absorption and charge separation in the semiconductor. The insulator layer between the metal and the semiconductor protects the latter element from photo-corrosion and, also, significantly impacts the photovoltage at the metal surface. Understanding how the insulator layer determines the photovoltage and what properties lead to high photovoltages is critical to the development of MIS structures for solar-to-chemical energy conversion. Herein, we present a continuum model for charge-carrier transport from the semiconductor to the metal with an emphasis on mechanisms of charge transport across the insulator. The polarization curves and photovoltages predicted by this model for a Pt/HfO₂/p-Si MIS structure at different HfO₂ thicknesses agree well with experimentally measured data. The simulations reveal how insulator properties (i.e., thickness and band structure) affect band bending near the semiconductor/insulator interface and how tuning them can lead to operation closer to the maximally attainable photovoltage, the flat-band potential. This phenomenon is understood by considering the change in tunneling resistance with insulator properties. The model shows that the best MIS performance is attained with highly symmetric semiconductor/insulator band offsets (e.g., BeO, MgO, SiO₂, HfO₂, or ZrO₂ deposited on Si) and a low to moderate insulator thickness (e.g., between 0.8 and 1.5 nm). Beyond 1.5 nm, the density of filled interfacial trap sites is high and significantly limits the photovoltage and the solar-to-chemical conversion rate. These conclusions are true for photocathodes and photoanodes. This understanding provides critical insight into the phenomena enhancing and limiting photoelectrode performance and how this phenomenon is influenced by insulator properties. The study gives guidance toward the development of next-generation insulators for MIS structures that achieve high performance.

ALD-Developed Plasmonic Two-Dimensional Au-WO3-TiO2 Heterojunction Architectonics for Design of Photovoltaic Devices

Electrically responsive plasmonic devices, which benefit from the privilege of surface plasmon excited hot carries, have supported fascinating applications in the visible-light-assisted technologies. The properties of plasmonic devices can be tuned by controlling charge transfer. It can be attained by intentional architecturing of the metal-semiconductor (MS) interfaces. In this study, the wafer-scaled fabrication of two-dimensional (2D) TiO₂ semiconductors on the granular Au metal substrate is achieved using the atomic layer deposition (ALD) technique. The ALD-developed 2D MS heterojunctions exhibited substantial enhancement of the photoresponsivity and demonstrated the improvement of response time for 2D Au-TiO₂-based plasmonic devices under visible light illumination. To circumvent the undesired dark current in the plasmonic devices, a 2D WO₃ nanofilm (∼0.7 nm) was employed as the intermediate layer on the MS interface to develop the metal-insulator-semiconductor (MIS) 2D heterostructure. As a result, 13.4% improvement of the external quantum efficiency was obtained for fabricated 2D Au-WO₃-TiO₂ heterojunctions. The impedancometry measurements confirmed the modulation of charge transfer at the 2D MS interface using MIS architectonics. Broadband photoresponsivity from the UV to the visible light region was observed for Au-TiO₂ and Au-WO₃-TiO₂ heterostructures, whereas near-infrared responsivity was not observed. Consequently, considering the versatile nature of the ALD technique, this approach can facilitate the architecturing and design of novel 2D MS and MIS heterojunctions for efficient plasmonic devices.

Transport Across Heterointerfaces of Amorphous Niobium Oxide and Crystallographically Oriented Epitaxial Germanium

Because of the high carrier mobility of germanium (Ge) and high dielectric permittivity of amorphous niobium pentoxide (a-Nb₂O₅), Ge/a-Nb₂O₅ heterostructures offer several advantages for the rapidly developing field of oxide-semiconductor-based multifunctional devices. To this end, we investigate the growth, structural, band alignment, and metal-insulator-semiconductor (MIS) electrical properties of physical vapor-deposited Nb₂O₅ on crystallographically oriented (100), (110), and (111)Ge epilayers. The as-deposited Nb₂O₅ dielectrics were found to be in the amorphous state, demonstrating an abrupt oxide/semiconductor heterointerface with respect to Ge, when examined via low- and high-magnification cross-sectional transmission electron microscopy. Additionally, variable-angle spectroscopic ellipsometry and X-ray photoelectron spectroscopy (XPS) were used to independently determine the a-Nb₂O₅ band gap, yielding a direct gap value of 4.30 eV. Moreover, analysis of the heterointerfacial energy band alignment between a-Nb₂O₅ and epitaxial Ge revealed valance band offsets (ΔE_V) greater than 2.5 eV, following the relation ΔE_V⁽¹¹¹⁾ > ΔE_V⁽¹¹⁰⁾ > ΔE_V⁽¹⁰⁰⁾. Similarly, utilizing the empirically determined a-Nb₂O₅ band gap, conduction band offsets (ΔE_C) greater than 0.75 eV were found, likewise following the relation ΔE_C⁽¹¹⁰⁾ > ΔE_C⁽¹⁰⁰⁾ > ΔE_C⁽¹¹¹⁾. Leveraging the reduced ΔE_C observed at the a-Nb₂O₅/Ge heterointerface, we also perform the first experimental investigation into Schottky barrier height reduction on n-Ge using a 2 nm a-Nb₂O₅ interlayer, resulting in a 20× increase in reverse-bias current density and improved Ohmic behavior.

Electrically Controlled Scattering in a Hybrid Dielectric-Plasmonic Nanoantenna

Electrically tunable devices in nanophotonics offer an exciting opportunity to combine electrical and optical functions, opening up their applications in active photonic devices. Silicon as a kind of high refractive index dielectric material has shown comparable performances with plasmonic nanostructures in tailoring and modulating the electromagnetic waves. However, there are few studies on electrically tunable silicon nanoantennas. Here, for the first time we realize the spectral tailoring of an individual silicon nanoparticle in the visible range through changing the applied voltage. We observe that the plasmon-dielectric hybrid resonant peaks experience blue shift and obvious intensity attenuation with increasing the bias voltages from 0 to 1.5 V. A physical model has been established to explain how the applied voltage influences the carrier concentration and how carrier concentration modifies the permittivity of silicon and then the final scattering spectra. Our findings pave a new approach to build excellent tunable nanoantennas or other nanophotonics devices where the optical responses can be purposely controlled by electrical signals.