Stepwise Aggregation Control of PEDOT:PSS Enabled High-Conductivity, High-Resolution Printing of Polymer Electrodes for Transparent Organic Phototransistors

Electrohydrodynamic (EHD) jet printing is a widely employed technology to create high-resolution patterns and thus has enormous potential for circuit production. However, achieving both high conductivity and high resolution in printed polymer electrodes is a challenging task. Here, by modulating the aggregation state of the conducting polymer in the solution and solid phases, a stable and continuous jetting of PEDOT:PSS is realized, and high-conductivity electrode arrays are prepared. The line width reaches less than 5 μm with a record-high conductivity of 1250 S/cm. Organic field-effect transistors (OFETs) are further developed by combining printed source/drain electrodes with ultrathin organic semiconductor crystals. These OFETs show great light sensitivity, with a specific detectivity (D*) value of 2.86 × 1014 Jones. In addition, a proof-of-concept fully transparent phototransistor is demonstrated, which opens up new pathways to multidimensional optical imaging.

Facile Blending Strategy for Boosting the Conjugated Polymer Semiconductor Transistor's Mobility

The optimization of field-effect mobility in polymer field-effect transistors (FETs) is a critical parameter for advancing organic electronics. Today, many challenges still persist in understanding the roles of the design and processing of semiconducting polymers toward electronic performance. To address this, a facile approach to solution processing using blends of PDPP-TVT and PTPA-3CN is developed, resulting in a 3.5-fold increase in hole mobility and retained stability in electrical performance over 3 cm2 V-1 s-1 after 20 weeks. The amorphous D-A conjugated structure and strong intramolecular polarity of PTPA-3CN are identified as major contributors to the observed improvements in mobility. Additionally, the composite analysis by X-ray photoelectron spectroscopy (XPS) and the flash differential scanning calorimetry (DSC) technique showed a uniform distribution and was well mixed in binary polymer systems. This mobility enhancement technique has also been successfully applied to other polymer semiconductor systems, offering a new design strategy for blending-type organic transistor systems. This blending methodology holds great promise for the practical applications of OFETs.

Dissecting the Interplay between Organic Charge-Modulated Field-Effect Transistors and Field-Effect Transistors through Interface Control Engineering

Organic charge-modulated field-effect transistors (OCMFETs) have garnered significant interest as sensing platforms for diverse applications that include biomaterials and chemical sensors owing to their distinct operational principles. This study aims to improve the understanding of driving mechanisms in OCMFETs and optimize their device performance by investigating the correlation between organic field-effect transistors (OFETs) and OCMFETs. By introducing self-assembled monolayers (SAMs) with different functional groups on the AlOx gate dielectric surface, we explored the impact of the surface characteristics on the electrical behavior of both devices. Our results indicate that the dipole moment of the dielectric surface is a critical control variable in the performance correlation between OFET and OCMFET devices, as it directly impacts the generation of the induced floating gate voltage through the control gate voltage. The insights obtained from this study contribute to the understanding of the factors affecting OCMFET performance and emphasize their potential as platforms for diverse sensing systems.

Unraveling the Effect of Stereoisomerism on Mobility-Stretchability Properties of n-Type Semiconducting Polymers with Biobased Epimers as Conjugation Break Spacers

The development of intrinsically stretchable n-type semiconducting polymers has garnered much interest in recent years. In this study, three biobased dianhydrohexitol epimers of isosorbide (ISB), isomannide (IMN), and isoidide (IID), derived from cellulose, were incorporated into the backbone of a naphthalenediimide (NDI)-based n-type semiconducting polymer as conjugation break spacers (CBSs). Accordingly, three polymers were synthesized through the Migita-Kosugi-Stille coupling polymerization with NDI, bithiophene, and CBSs, and the mobility-stretchability properties of these polymers were investigated and compared with those of their analogues with conventional alkyl-based CBSs. Experimental results showed that the different configurations of these epimers in CBSs sufficiently modulate the melt entropies, surface aggregation, crystallographic parameters, chain entanglements, and mobility-stretchability properties. Comparable ductility and edge-on preferred stacking were observed in polymers with endo- or exo-configurations in IMN- and IID-based polymers. By contrast, ISB with endo-/exo-configurations exhibits an excellent chain-realigning capability, a reduced crack density, and a proceeding bimodal orientation under tensile strain. Therefore, the ISB-based polymer exhibits high orthogonal electron mobility retention of (53 and 56)% at 100% strain. This study is one of the few examples where biobased moieties are incorporated into semiconducting polymers as stress-relaxation units. Additionally, this is the first study to report on the effect of stereoisomerism of epimers on the morphology and mobility-stretchability properties of semiconducting polymers.

Chalcogenopheno[3,2-b]pyrrole-Containing Donor-Acceptor-Donor Organic Semiconducting Small Molecules for Organic Field-Effect Transistors

A group of chalcogenopheno[3,2-b]pyrroles, including thieno[3,2-b]pyrrole (TP), furo[3,2-b]pyrrole (FP), and selenopheno[3,2-b]pyrrole (SeP), and thieno[3,2-b]thiophene (TT) electron-donating units were coupled with a thiophene-flanked diketopyrrolo[3,4-c]pyrrole (ThDPP) acceptor to generate four donor-acceptor-donor (D-A-D) semiconducting small molecules (ThDPP-TT, ThDPP-FP, ThDPP-TP, and ThDPP-SeP). This study systematically investigated the differences between chalcogenopheno[3,2-b]pyrroles and TT. From the characterizations, chalcogenopheno[3,2-b]pyrrole-containing molecules showed lower band gaps and binding-energy cold crystallization behavior. The enthalpies of cold crystallization were correlated with the weight of the chalcogen in ThDPP-FP, ThDPP-TP, and ThDPP-SeP, which were evaluated as intermolecular chalcogen-bond interactions between chalcogen and pyrrole nitrogen in chalcogenopheno[3,2-b]pyrroles. A stronger chalcogen bond interaction resulted in stronger self-aggregation in thin films with thermal treatment, which resulted in a polycrystalline structure in chalcogenopheno[3,2-b]pyrrole-containing molecules. For the application in an organic field-effect transistor, all four molecules showed good performance with the highest hole mobilities as 6.33 × 10-3 cm2 V-1 s-1 for ThDPP-TT, 2.08 × 10-2 cm2 V-1 s-1 for ThDPP-FP, 1.87 × 10-2 cm2 V-1 s-1 for ThDPP-TP, and 6.32 × 10-3 cm2 V-1 s-1 for ThDPP-SeP, and the change of mobility is well correlated to the root-mean-square roughness of the thin films. Overall, all the chalcogenopheno[3,2-b]pyrrole-containing molecules showed lower band gaps, polymorphism, and better charge transport properties compared to TT-containing molecules, which motivates replacing TT with chalcogenopheno[3,2-b]pyrroles in conjugated polymers, non-fullerene small molecular acceptors, and narrow-band-gap donors.

Solution-Processable Indenofluorenes on Polymer Brush Interlayer: Remarkable N-Channel Field-Effect Transistor Characteristics under Ambient Conditions

The development of solution-processable n-type molecular semiconductors that exhibit high electron mobility (μe ≥ 0.5 cm2/(V·s)) under ambient conditions, along with high current modulation (Ion/Ioff ≥ 106-107) and near-zero turn on voltage (Von) characteristics, has lagged behind that of other semiconductors in organic field-effect transistors (OFETs). Here, we report the design, synthesis, physicochemical and optoelectronic characterizations, and OFET performances of a library of solution-processable, low-LUMO (-4.20 eV) 2,2'-(2,8-bis(3-alkylthiophen-2-yl)indeno[1,2-b]fluorene-6,12-diylidene)dimalononitrile small molecules, β,β'-Cn-TIFDMTs, having varied alkyl chain lengths (n = 8, 12, 16). An intriguing correlation is identified between the solid-isotropic liquid transition enthalpies and the solubilities, indicating that cohesive energetics, which are tuned by alkyl chains, play a pivotal role in determining solubility. The semiconductors were spin-coated under ambient conditions on densely packed (grafting densities of 0.19-0.45 chains/nm2) ultrathin (∼3.6-6.6 nm) polystyrene-brush surfaces. It is demonstrated that, on this polymer interlayer, thermally induced dispersive interactions occurring over a large number of methylene units between flexible alkyl chains (i.e., zipper effect) are critical to achieve a favorable thin-film crystallization with a proper microstructure and morphology for efficient charge transport. While C8 and C16 chains show a minimal zipper effect upon thermal annealing, C12 chains undergo an extended interdigitation involving ∼6 methylene units. This results in the formation of large crystallites having lamellar stacking ((100) coherence length ∼30 nm) in the out-of-plane direction and highly favorable in-plane π-interactions in a slipped-stacked arrangement. Uninterrupted microstructural integrity (i.e., no face-on (010)-oriented crystallites) was found to be critical to achieving high mobilities. The excellent crystallinity of the C12-substituted semiconductor thin film was also evident in the observed crystal lattice vibrations (phonons) at 58 cm-1 in low-frequency Raman scattering. Two-dimensional micrometer-sized (∼1-3 μm), sharp-edged plate-like grains lying parallel with the substrate plane were observed. OFETs fabricated by the current small molecules showed excellent n-channel behavior in ambient with μe values reaching ∼0.9 cm2/(V·s), Ion/Ioff ∼ 107-108, and Von ≈ 0 V. Our study not only demonstrates one of the highest performing n-channel OFET devices reported under ambient conditions via solution processing but also elucidates significant relationships among chemical structures, molecular properties, self-assembly from solution into a thin film, and semiconducting thin-film properties. The design rationales presented herein may open up new avenues for the development of high-electron-mobility novel electron-deficient indenofluorene and short-axis substituted donor-acceptor π-architectures via alkyl chain engineering and interface engineering.

Optimization of Gas-Sensing Properties in Poly(triarylamine) Field-Effect Transistors by Device and Interface Engineering

In this study, we investigated the gas-sensing mechanism in bottom-gate organic field-effect transistors (OFETs) using poly(triarylamine) (PTAA). A comparison of different device architectures revealed that the top-contact structure exhibited superior gas-sensing performance in terms of field-effect mobility and sensitivity. The thickness of the active layer played a critical role in enhancing these parameters in the top-contact structure. Moreover, the distance and pathway for charge carriers to reach the active channel were found to significantly influence the gas response. Additionally, the surface treatment of the SiO2 dielectric with hydrophobic self-assembled mono-layers led to further improvement in the performance of the OFETs and gas sensors by effectively passivating the silanol groups. Under optimal conditions, our PTAA-based gas sensors achieved an exceptionally high response (>200%/ppm) towards NO2. These findings highlight the importance of device and interface engineering for optimizing gas-sensing properties in amorphous polymer semiconductors, offering valuable insights for the design of advanced gas sensors.

Strain-Balanced Organic Semiconductor Film for Improving the Stability of Organic Field-Effect Transistors

Strain-induced aggregate state instability in organic semiconductor (OSC) films is a critical and bottleneck issue in the practicalization process of organic field-effect transistors (OFETs), but this issue lacks deep insight and effective solutions for a long time. Herein, we developed a novel and general strain balance strategy for stabilizing the aggregate state of OSC films and enhancing the robustness of OFETs. The charge transport zone in OSC films located at the OSC/dielectric interface always suffers from the intrinsic tensile strain induced by substrates and tends to dewet. By introducing a compressive strain layer, the tensile strain can be well balanced and OSC films attain a highly stable aggregate state. Consequently, the OFETs based on strain-balanced OSC heterojunction films exhibit excellent operational and storage stability. This work provides an effective and general strategy to stabilize OSC films and gives guidance in constructing highly stable organic heterojunction devices.

Polymer-Gated Transistors with Only One Solution-Processed, Single Crystalline Organic Microwire for Light and Oxygen Detection

Organic semiconductors employed in single crystalline form have several advantages over polycrystalline films, such as higher charge carrier mobility and better environmental stability. Herein, we report the fabrication and characterization of a solution-processed microsized single-crystalline organic wire of n-type N,N'-dipentyl-3,4,9,10-perylene tetracarboxylic diimide (PTCDI-C₅). The crystal was applied as an active layer in polymer-gated organic field-effect transistors (OFETs) and organic complementary inverter circuits. The single crystaiiline nature of PTCDI-C₅ wires were characterized using two-dimensional grazing incidence wide-angle X-ray diffraction (2D-GIXD) and polarized optical microscopy. OFETs with the PTCDI-C₅ crystals exhibited high n-type performance and air stability under ambient conditions. To investigate the electrical properties of the single-crystalline PTCDI-C₅ wire more precisely, OFETs with only one PTCDI-C₅ microwire in the channel were fabricated, and clear n-type characteristics with satisfactory saturation behavior were observed. The device with only one crystal wire exhibited characteristics with significantly lower variation compared to the multicrystal devices, which shows that the density of crystal wires is a critical factor in precisely investigating device performance. The devices exhibited a reversible threshold voltage shift under vacuum and oxygen conditions, without changing the charge carrier mobility. Light-sensitive characteristics were also observed. Additionally, this solution-processed, highly crystalline organic semiconductor can be used in high-performance organic electronic circuits as well as in gas or light sensors.

Enhancing the Elasticity of Conjugated Polymers through Precise Control of the Spacing between the Backbone and Siloxane Side-Chains

Intrinsically stretchable conjugated polymers (CPs) have extensively been studied for the development of novel flexible electronic devices. In this work, a method to control the elastic properties of CPs has been proposed via regulation of spacer length between the siloxane side-chain and the backbone. The target polymers were CP films with the structure P(mC-Si) for four different numbers of the spacer methylene groups, namely, m = 5, 6, 7, and 8. The effect of spacer length on the aggregation state as well as on electrical and elastic properties of the prepared films was then investigated. An adjustable lamellar spacing (d_L-L), in addition to improved elastic properties, was achieved as the spacer length was changed in the prepared polymer films. Moreover, P(7C-Si) has a sufficient d_L-L value of 35.77 Å, which provides enough space for inter-chain sliding to dissipate stress. This facilitated the dissipation of stress during the straining process. At a strain value of 100% in the vertical direction, the mobility of the P(7C-Si) film was 0.79 cm² V^-1 s^-1 and reduced to 84.0% of the initial value without any applied strain. The study provides clear evidence that tuning the spacer length between the silicone endgroup and backbone is an effective way to improve the intrinsic stretchability of CPs with siloxane side chains.

High-Performance Nitric Oxide Gas Sensors Based on an Ultrathin Nanoporous Poly(3-hexylthiophene) Film

Conjugated polymer (CP)-based organic field-effect transistors (OFETs) have been considered a potential sensor platform for detecting gas molecules because they can amplify sensing signals by controlling the gate voltage. However, these sensors exhibit significantly poorer oxidizing gas sensing performance than their inorganic counterparts. This paper presents a high-performance nitric oxide (NO) OFET sensor consisting of a poly(3-hexylthiophene) (P3HT) film with an ultrathin nanoporous structure. The ultrathin nonporous structure of the P3HT film was created via deposition through the shear-coating-assisted phase separation of polymer blends and selective solvent etching. The ultrathin nonporous structure of the P3HT film enhanced NO gas diffusion, adsorption, and desorption, resulting in the ultrathin nanoporous P3HT-film-based OFET gas sensor exhibiting significantly better sensing performance than pristine P3HT-film-based OFET sensors. Additionally, upon exposure to 10 ppm NO at room temperature, the nanoporous P3HT-film-based OFET gas sensor exhibited significantly better sensing performance (i.e., responsivity ≈ 42%, sensitivity ≈ 4.7% ppm^-1, limit of detection ≈ 0.5 ppm, and response/recovery times ≈ 6.6/8.0 min) than the pristine P3HT-film-based OFET sensors.

Hyperbranched Diketopyrrolopyrrole-based Polymers Constructed via Linear Side-Chains towards Organic Field-Effect Transistors

Conjugated polymers with high charge mobilities have drawn increasing attention in organic field-effect transistors (OFETs) in recent years. However, OFETs of conjugated polymers with high mobility and good device stability remain a challenge. In this article, we report a hyperbranched polymer approach to improve the charge mobility and device stability. Three hyperbranched diketopyrrolopyrrole-based polymers were designed and synthesized via linear alkyl side-chain linkers. The results show that 2D topological hyperbranched polymers form stable thin film microstructures, and thus improve the device stability, since the conjugated moiety is interconnected by linear alkyl chain. Besides, the incorporation of linear alkyl chain instead of branching alkyl one reduce steric hindrance, and improve the microstructure ordering as well as the charge mobility. Bar-coated OFETs result demonstrates that the devices mobilities and operational stabilities (bias stability and bending resistance) are both improved. All these indicate that hyperbranched polymer is a potential candidate for future application.

Heat Transfer Enhancement of n-Type Organic Semiconductors by an Insulator Blend Approach

The transfer of heat energy in organic semiconductors (OSCs) plays an important role in advancing the applications of organic electronics, especially for lifetime issues. However, compared with crystalline inorganic semiconductors, the thermal transport of OSCs is less efficient and a relevant understanding is very limited. In this contribution, we show that the heat conduction of OSCs can be enhanced by blending with a "commodity" insulator (both thermal and electrical). PC₇₁BM, a well-known electron transporter but poor thermal conductor, was selected as the host OSC material. The blending of a small amount of polystyrene (PS), a commonly used insulating polymer, can facilitate the heat transfer of PC₇₁BM films, as substantiated by the scanning photothermal deflection technique and an infrared thermal camera. The phase thermodynamics of PC₇₁BM/PS blends indicates that the efficient heat transfer preferably occurs in the OSC/insulator blends with better intimate mixing, where isolated PC₇₁BM domains can be effectively bridged by PS that thread through the regions. The applicability of this approach can be observed in blends with another host material─ITIC. This work provides a facile strategy for designing thermally durable organic electronic devices.

Electrohydrodynamic-Jet-Printed Phthalimide-Derived Conjugated Polymers for Organic Field-Effect Transistors and Logic Gates

A π-conjugated polymer semiconductor, PBDTTTffPI, was synthesized for use as an organic semiconductor suitable for electrohydrodynamic (EHD) jet printing technology. Bulky alkylation of the polymer gave PBDTTTffPI good solubility in several organic solvents. EHD jet printing using PBDTTTffPI ink produced direct patterns of polymer semiconductors while maintaining smooth surface morphologies and crystal structures similar to those of spin-coated PBDTTTffPI films. EHD-jet-printed PBDTTTffPI was appropriate for use as a semiconductor layer in organic field-effect transistors (OFETs) and logic gates. OFETs that used EHD-jet-printed PBDTTTffPI had better electrical characteristics than devices that used spin-coated semiconductor films. When a dielectric material (Al₂O₃) with a high dielectric constant was introduced, the jet-printed PBDTTTffPI operated well at low voltages. Integrated devices such as inverters, NAND gates, and NOR gates were fabricated by printing PBDTTTffPI patterns and showed good switching behaviors. Therefore, the use of printable PBDTTTffPI provides an advance toward fabrication of practical integrated arrays in next-generation devices.

Multi-Oxyanion Detection by an Organic Field-Effect Transistor with Pattern Recognition Techniques and Its Application to Quantitative Phosphate Sensing in Human Blood Serum

We herein report an organic field-effect transistor (OFET) based chemical sensor for multi-oxyanion detection with pattern recognition techniques. The oxyanions ubiquitously play versatile roles in biological systems, and accessing the chemical information they provide would potentially facilitate fundamental research in diagnosis and pharmacology. In this regard, phosphates in human blood serum would be a promising indicator for early case detection of significant diseases. Thus, the development of an easy-to-use chemical sensor for qualitative and quantitative detection of oxyanions is required in real-world scenarios. To this end, an extended-gate-type OFET has been functionalized with a metal complex consisting of 2,2'-dipicolylamine and a copper(II) ion (CuII-dpa), allowing a compact chemical sensor for oxyanion detection. The OFET combined with a uniform CuII-dpa-based self-assembled monolayer (SAM) on the extended-gate gold electrode shows a cross-reactive response, which suggests a discriminatory power for pattern recognition. Indeed, the qualitative detection of 13 oxyanions (i.e., hydrogen monophosphate, pyrophosphate, adenosine monophosphate, adenosine diphosphate, adenosine triphosphate, terephthalate, phthalate, isophthalate, malonate, oxalate, lactate, benzoate, and acetate) has been demonstrated by only using a single OFET-based sensor with linear discriminant analysis, which has shown 100% correct classification. The OFET has been further applied to the quantification of hydrogen monophosphate in human blood serum using a support vector machine (SVM). The multiple predictions of hydrogen monophosphate at 49 and 89 μM have been successfully realized with low errors, which indicates that the OFET-based sensor with pattern recognition techniques would be a practical sensing platform for medical assays. We believe that a combination of the OFET functionalized with the SAM-based recognition scaffold and powerful pattern recognition methods can achieve multi-analyte detection from just a single sensor.

Photoresponse Dimensionality of Organic Field-Effect Transistor

Organic field-effect transistors have been envisioned for advanced photodetectors because the organic semiconductors provide unique absorption characteristics, low-cost fabrication, or compatibility with flexible substrates. However, the response time of organic phototransistors still does not reach the required application level. Here, we report the photoresponse of copper phthalocyanine phototransistor in a steady state and under pulsed illumination. The detailed analysis based on the random walk among a field of traps was used to evaluate the dimensionality of electron transport in a device.

Mass-Synthesized Solution-Processable Polyimide Gate Dielectrics for Electrically Stable Operating OFETs and Integrated Circuits

Polyimides (PIs) are widely utilized polymeric materials for high-temperature plastics, adhesives, dielectrics, nonlinear optical materials, flexible hard-coating films, and substrates for flexible electronics. PIs can be facilely mass-produced through factory methods, so the industrial application value is limitless. Herein, we synthesized a typical poly(amic acid) (PAA) precursor-based solution through an industrialized reactor for mass production and applied the prepared solution to form thin films of PI using thermal imidization. The deposited PI thin films were successfully applied as gate dielectrics for organic field-effect transistors (OFETs). The PI layers showed suitable characteristics for dielectrics, such as a smooth surface, low leakage current density, uniform dielectric constant (k) values regardless of frequency, and compatibility with organic semiconductors. Utilizing this PI layer, we were able to fabricate electrically stable operated OFETs, which exhibited a threshold voltage shift lower than 1 V under bias-stress conditions and a field-effect mobility of 4.29 cm² V^-1 s^-1. Moreover, integrated logic gates were manufactured using these well-operated OFETs and displayed suitable operation behavior.

Controlled Synthesis of Poly[(3-alkylthio)thiophene]s and Their Application to Organic Field-Effect Transistors

Regioregular polythiophenes have been widely used in organic electronic applications due to their solution processability with chemical modification through side chain engineering, as well as their microstructural organization and good hole transport properties. Here, we introduce alkylthio side chains, (poly[(3-alkylthio)thiophene]s; P3ATTs), with strong noncovalent sulfur molecular interactions, to main chain thienyl backbones. These P3ATTs were compared with alkyl-substituted polythiophene (poly(3-alkylthiophene); P3AT) variants such that the effects of straight (hexyl and decyl) and branched (2-ethylhexyl) side chains (with and without S atoms) on their thin-film morphologies and crystalline states could be investigated. P3ATTs with linear alkylthio side chains (P3HTT, hexylthio; P3DTT, decylthio) did not attain the expected higher organic field-effect transistor (OFET) mobilities with respect to P3HT (hexyl) and P3DT (decyl) mainly due to their lower regioregularity (76-78%), although P3ATTs exhibit an enhanced tendency for aggregation and compact molecular packing, as indicated by the red-shifting of the absorption spectra and the shortening of the π-π stacking distance, respectively. Moreover, the loss of regioregularity issue can be solved by introducing more soluble 2-ethylhexylthio branched side chains to form poly[3-(2-ethylhexylthio)thiophene] (P3EHTT), which provides enhanced crystallinity and efficient charge mobility (increased by up to a factor of 3) with respect to the poly(2-ethylhexylthiophene) (P3EHT) without S atoms in the side moieties. This study demonstrates that the presence of side chain alkylthio structural motifs with nonbonded interactions in polythiophene semiconductors has a beneficial impact on the molecular conformation, morphologies, structural packing, and charge transport in OFET devices.

Tailored Polymer Gate Dielectric Engineering to Optimize Flexible Organic Field-Effect Transistors and Complementary Integrated Circuits

The increasing demand for solution-processed and flexible organic electronics has promoted the fabrication of integrated logic circuits using organic field-effect transistors (OFETs) instead of fundamental unit devices. This has been made possible through the rapid development of materials and processes in the past few decades. It is important for the p- and n-type OFETs using different organic semiconductors (OSCs) to have complementarily matched electrical characteristics, which significantly improve the performance of organic logic circuits. In this study, an efficient strategy to optimize the performance of flexible organic electronics, such as OFETs and complementary inverters, is proposed using a combination of polymer insulators tailored to each OSC type. Photopatternable soluble copolyimides (ScoPIs), which exhibit excellent insulating properties and chemical resistance, are synthesized and applied as gate dielectric layers in the OFETs. The material and electrical properties are systematically investigated by varying the molecular ratio of ScoPIs to determine the optimal conditions for each OFET type. As a result, complementary inverters report 1.67 times higher integration density compared to the conventional ones while maintaining gain, switching threshold, and static noise margin of 23.7 V/V, 22.1 V, and 12.1 V, respectively, at a supply voltage of 40 V. The flexible complementary inverters are successfully demonstrated by fully exploiting the advantages of ScoPIs.

Switching from Electron to Hole Transport in Solution-Processed Organic Blend Field-Effect Transistors

Organic electronics became an attractive alternative for practical applications in complementary logic circuits due to the unique features of organic semiconductors such as solution processability and ease of large-area manufacturing. Bulk heterojunctions (BHJ), consisting of a blend of two organic semiconductors of different electronic affinities, allow fabrication of a broad range of devices such as light-emitting transistors, light-emitting diodes, photovoltaics, photodetectors, ambipolar transistors and sensors. In this work, the charge carrier transport of BHJ films in field-effect transistors is switched from electron to hole domination upon processing and post-treatment. Low molecular weight n-type N,N'-bis(n-octyl)-(1,7&1,6)-dicyanoperylene-3,4:9,10-bis(dicarboximide) (PDI8-CN₂) was blended with p-type poly[2,5-bis(3-tetradecylthiophene-2-yl)thieno[3,2-b]thiophene] (PBTTT-C₁₄) and deposited by spin-coating to form BHJ films. Systematic investigation of the role of rotation speed, solution temperature, and thermal annealing on thin film morphology was performed using atomic force microscopy, scanning electron microscopy, and grazing incidence wide-angle X-ray scattering. It has been determined that upon thermal annealing the BHJ morphology is modified from small interconnected PDI8-CN₂ crystals uniformly distributed in the polymer fraction to large planar PDI8-CN2 crystal domains on top of the blend film, leading to the switch from electron to hole transport in field-effect transistors.

Nonvolatile Multilevel Photomemory Based on Lead-Free Double Perovskite Cs2AgBiBr6 Nanocrystals Wrapped Within SiO2 as a Charge Trapping Layer

Floating gate transistor photomemory (FGTPM) has been regarded as one of the most prospective nonvolatile photomemory devices because of its compatibility with transistor-based circuits, nondestructive reading, and multilevel storage. Until now, owing to the excellent photoelectric properties, lead-based perovskite nanocrystals (PNCs) have been applied in most of the perovskite-based FGTPM devices and embedded in the polymer matrix as the charge trapping layer. However, the polymer matrix and its solvent would degrade the structure of the PNCs, resulting in the loss of their unique photoresponse ability. In addition, lead-based perovskites have environmental unfriendliness and poor stability. Hence, a novel nonvolatile FGTPM based on oligomeric silica (OS) wrapped lead-free double perovskite Cs₂AgBiBr₆ NCs was demonstrated for the first time. Acting synchronously as the protection layer for the discrete Cs₂AgBiBr₆ NCs and charge tunneling layer for the FGTPM device, the OS layer can achieve controllable thickness by adjusting the process parameters, leading to an adjustment of storage properties with a larger memory window (58 V). Owing to the excellent photoresponse ability of the Cs₂AgBiBr₆@OS composite layer, the FGTPM device exhibited high-performance with repeatable multilevel nonvolatile photomemory and precise photoresponse ability of wavelength/time/power-dependent photoirradiation without extra gate biasing.

A-D-A Type Semiconducting Small Molecules with Bis(alkylsulfanyl)methylene Substituents and Control of Charge Polarity for Organic Field-Effect Transistors

In this study, we synthesize four different kinds of bis(alkylsulfanyl)methylene-substituted 4,9-dihydro-s-indaceno[1,2-b:5,6-b']dithiophene (IDT)-based acceptor-donor-acceptor (A-D-A) type small molecules (IDSIC, IDSIC-4F, IDSIC-4Cl, and IDSTIC) by incorporating electron-withdrawing halogen atoms or electron-releasing thiophene spacers. Herein, enhanced structural planarity and crystalline intermolecular packing are induced by the sp²-hybridized C═C double bond side chains and sulfur-sulfur chalcogen interactions. The fine control of intramolecular charge transfer modulates the electrochemical characteristics and the resulting carrier polarity in organic field-effect transistors (OFETs). Well-balanced ambipolar, n-dominant, and p-dominant charge transport properties are successfully demonstrated in OFETs by modulating the electron-donating or withdrawing strength based on the A-D-A structural motif, resulting in hole/electron mobilities of 0.599/0.553, 0.003/0.019, 0.092/0.897, and 0.683/0.103 cm²/V·s for IDSIC, IDSIC-4F, IDSIC-4Cl, and IDSTIC respectively, after thermal annealing at 200 °C. Thermal annealing of the as-cast films improves the intermolecular packing in an edge-on fashion, which is investigated in detail by grazing incidence X-ray scattering. Finally, complementary logic circuits, i.e., NOT, NAND, and NOR, are fabricated by assembling p-dominant IDSTIC and n-dominant IDSIC-4Cl OFETs. Therefore, a simple and efficient molecular design strategy for fine tuning the charge polarity and charge transport properties of OFET devices is presented.

Influence of Molecular Symmetry and Terminal Substituents on the Morphology and OFET Characteristics of S,N-Heteropentacenes

Many heteroacenes have been extensively studied to improve device performances; however, the morphological effects stemmed from the chemical modification on a multiscale remain less explored. In this research, five axisymmetric S,N-heteropentacenes (DTPT, DTPT-Ph, DTPT-CN, DTPT-PYCN, and DTPT-BTCN) are studied to reveal the influences of molecular symmetry and end-capping substituents on the structure-property relationship, the thermal stability, crystallization behavior, film morphology, and OFET performance. Phase behavior was probed by differential scanning calorimetry (DSC), while the quality of the crystal array and structural details was investigated by optical microscopy (OM) and grazing-incidence wide-angle X-ray scattering (GIWAXS). The analytic results reveal that (1) the parent axisymmetric S,N-heteropentacene, DTPT, is hard to crystallize, which hinders the preparation of high-quality crystal arrays for the OFET application. (2) The incorporation of π-conjugated electron-withdrawing (π-EW) endcaps that provide extended conjugation length and enhanced molecular polarity is required to form oriented crystal arrays to deliver reasonable OFET characteristics. (3) The π-EW endcaps with conformational freedom, such as -BTCN, due to the asymmetric feature of benzothiadiazole (BT), can hinder bulk phase crystallization and cause conformational disorder in the crystal array. Hence, the tradeoff of introducing the end-substituents to reinforce the poor crystalline nature of S,N-heteroacenes should be carefully considered.

Configurationally Random Polythiophene for Improved Polymer Ordering and Charge-Transporting Ability

Random polythiophene polymers are characterized by the arbitrary sequences of monomeric units along polymer backbones. These untailored orientations generally result in the twisting of thiophene rings out of the conjugation planarity in addition to steric repulsions experienced among substituted alkyl chains. These tendencies have limited close polymer packing, which has been detrimental to charge transport in these moieties. To ameliorate charge transport in these classes of polymers, we make use of simple Stille coupling polymerization to synthesize highly random polythiophene polymers. We induced a positive microstructural change between polymer chains by attuning the ratio between alkyl-substituted and nonalkyl-substituted monomer units along the backbones. The optimized random polythiophene was found to have enhanced intermolecular interaction, increased size of crystallites, and stronger tendency to take edge orientation compared with both regiorandom and regioregular poly(3-hexylthiophene) polymers. Incorporation of the optimized random polythiophene as an active material in solid-state electrolyte-gated organic field-effect transistors exhibited better performance than the control device using regioregular poly(3-hexylthiophene), with a high hole mobility up to 4.52 cm² V^-1 s^-1 in ambient conditions.

Systematic Study on the Morphological Development of Blade-Coated Conjugated Polymer Thin Films via In Situ Measurements

The morphology of conjugated polymer thin films, determined by the kinetics of film drying, is closely correlated with their electrical properties. Herein, we focused on dramatic changes in the thin-film morphology of blade-coated poly{[N,N'-bis(2-octyldodecyl)-naphthalene-1,4,5,8-bis(dicarboximide)-2,6-diyl]-alt-5,5'-(2,2'-bithiophene)} caused by the effect of solvent and coating temperature. Through in situ measurements, the evolution of polymer aggregates and crystallites, which plays a decisive role in the formation of the charge-transport pathway, was observed in real time. By combining in situ ultraviolet-visible spectroscopy and in situ grazing-incidence wide-angle X-ray scattering analysis, we could identify five distinct stages during the blade-coating process; these stages were observed irrespective of the solvent and coating temperature used. The five stages are described in detail with a proposed model of film formation. This insight is an important step in understanding the relationship between the morphology of thin polymer films and their charge-transport properties as well as in optimizing the structural evolution of thin films.

Carbonyl-Terminated Quinoidal Oligothiophenes as p-Type Organic Semiconductors

A series of quinoidal oligothiophenes terminated with carbonyl groups (nTDs, n = 2–4) are studied as p-type organic semiconductors for the active materials in organic field-effect transistors (OFETs) both by the theoretical and experimental approaches. The theoretical calculations clearly show their high-lying highest occupied molecular orbital (HOMO) energy levels (E_HOMOs), small reorganization energies for hole transport (λ_holes), and large contribution of sulfur atoms to HOMOs, all of which are desirable for p-type organic semiconductors. Thus, we synthesized nTDs from the corresponding aromatic oligothiophene precursors and then evaluated their physicochemical properties and structural properties. These experimental evaluations of nTDs nicely proved the theoretical predictions, and the largest 4TDs in the series (4,4′′′-dihexyl- and 3′,4,4″,4′′′-tetrahexyl-5H,5′′′H-[2,2′:5′,2″:5″,2′′′-quaterthiophene]-5,5′′′-dione) can afford solution-processed OFETs showing unipolar p-type behaviors and hole mobility as high as 0.026 cm² V⁻¹ s⁻¹.

Flexible Bottom-Gated Organic Field-Effect Transistors Utilizing Stamped Polymer Layers from the Surface of Water

The facile sequential deposition of functional organic thin films by solution processes is critical for the development of a variety of high-performance organic devices without restriction in terms of materials and processes. Herein, we propose a simple fabrication process that entails stacking multiple layers of functional polymers to fabricate organic field-effect transistors (OFETs). The process involves stamping organic semiconducting layers formed on the surface of water onto a commonly used polymeric dielectric layer. Our scheme makes it possible to independently optimize organic semiconductor films by controlling the solvent evaporation time during the process of film formation on the surface of water. This approach eliminates the need to be concerned about any interference with adjacent layers. Utilizing this process, the fabrication of high-performance bottom-gated OFETs is demonstrated on a glass and a flexible substrate. The OFETs consist of a vertically stacked diketopyrrolopyrrole-based polymer semiconducting layer on the poly(methyl methacrylate) film with a maximum hole mobility of 0.85 cm²/V s.

Anthracene-Pentacene Dyads: Synthesis and OFET Characterization

The synthesis of a series of unsymmetrical derivatives of pentacene appended with functionalized anthracene moieties is reported. These anthracene-pentacene dyads have been characterized by UV-vis spectroscopy and cyclic voltammetry to examine their electronic properties. X-ray crystallographic analysis was used to examine the solid-state features of anthracene-pentacene dyads 1 a-d with H-, F-, Cl-, and Br- substituents on the 9-position of anthracene, and shows that the packing arrangement of anthracene-pentacene derivatives 1 b,d,e are remarkably similar irrespective of the presence of fluoride, bromide or methyl substituents. The pentacene-anthracene dyads have been incorporated into OTFTs to evaluate their semiconducting properties. The pentacene derivative 1 b shows ambipolar behavior using AlO_x C₁₄ PA as the gate dielectric (electron and hole mobilities of 7.6 ⋅ 10^-3 and 1.6 ⋅ 10^-1  cm²  V^-1  s^-1 ), while performance of all derivatives was poor using p-doped Silicon as the substrate. These studies highlight the importance of thin-film formation over molecular structure.

Preparation of Nanocomposite-based High Performance Organic Field Effect Transistor via Solution Floating Method and Mechanical Property Evaluation

We demonstrate that using nanocomposite thin films consisting of semiconducting polymer, poly(3-hexylthiophene) (P3HT), and electrochemically exfoliated graphene (EEG) for the active channel layer of organic field-effect transistors (OFETs) improves both device performances and mechanical properties. The nanocomposite film was developed by directly blending P3HT solution with a dispersion of EEG at various weight proportions and simply transferring to an Si/SiO2 substrate by the solution floating method. The OFET based on P3HT/EEG nanocomposite film showed approximately twice higher field-effect mobility of 0.0391 cm²·V⁻¹·s⁻¹ and one order of magnitude greater on/off ratio of ~10⁴ compared with the OFET based on pristine P3HT. We also measured the mechanical properties of P3HT/EEG nanocomposite film via film-on-elastomer methods, which confirms that the P3HT/EEG nanocomposite film exhibited approximately 2.4 times higher modulus (3.29 GPa) than that of the P3HT film (1.38 GPa), while maintaining the good bending flexibility and durability over 10.0% of bending strain and bending cycles (1000 cycles). It was proved that the polymer hybridization technique, which involves adding EEG to a conjugated polymer, is a powerful route for enhancing both device performances and mechanical properties while maintaining the flexible characteristics of OFET devices.

Realization of an Ultrasensitive and Highly Selective OFET NO2 Sensor: The Synergistic Combination of PDVT-10 Polymer and Porphyrin-MOF

Organic field-effect transistors (OFETs) are emerging as competitive candidates for gas sensing applications due to the ease of their fabrication process combined with the ability to readily fine-tune the properties of organic semiconductors. Nevertheless, some key challenges remain to be addressed, such as material degradation, low sensitivity, and poor selectivity toward toxic gases. Appropriately, a heterojunction combination of different sensing layers with multifunctional capabilities offers great potential to overcome these problems. Here, a novel and highly sensitive receptor layer is proposed encompassing a porous 3D metal-organic framework (MOF) based on isostructural-fluorinated MOFs acting as an NO₂ specific preconcentrator, on the surface of a stable and ultrathin PDVT-10 organic semiconductor on an OFET platform. Here, with this proposed combination we have unveiled an unprecedented 700% increase in sensitivity toward NO₂ analyte in contrast to the pristine PDVT-10. The resultant combination for this OFET device exhibits a remarkable lowest detection limit of 8.25 ppb, a sensitivity of 680 nA/ppb, and good stability over a period of 6 months under normal laboratory conditions. Further, a negligible response (4.232 nA/%RH) toward humidity in the range of 5%-90% relative humidity was demonstrated using this combination. Markedly, the obtained results support the use of the proposed novel strategy to achieve an excellent sensing performance with an OFET platform.

Realization of an Ultrasensitive and Highly Selective OFET NO2 Sensor: The Synergistic Combination of PDVT-10 Polymer and Porphyrin-MOF

Organic field-effect transistors (OFETs) are emerging as competitive candidates for gas sensing applications due to the ease of their fabrication process combined with the ability to readily fine-tune the properties of organic semiconductors. Nevertheless, some key challenges remain to be addressed, such as material degradation, low sensitivity, and poor selectivity toward toxic gases. Appropriately, a heterojunction combination of different sensing layers with multifunctional capabilities offers great potential to overcome these problems. Here, a novel and highly sensitive receptor layer is proposed encompassing a porous 3D metal-organic framework (MOF) based on isostructural-fluorinated MOFs acting as an NO₂ specific preconcentrator, on the surface of a stable and ultrathin PDVT-10 organic semiconductor on an OFET platform. Here, with this proposed combination we have unveiled an unprecedented 700% increase in sensitivity toward NO₂ analyte in contrast to the pristine PDVT-10. The resultant combination for this OFET device exhibits a remarkable lowest detection limit of 8.25 ppb, a sensitivity of 680 nA/ppb, and good stability over a period of 6 months under normal laboratory conditions. Further, a negligible response (4.232 nA/%RH) toward humidity in the range of 5%-90% relative humidity was demonstrated using this combination. Markedly, the obtained results support the use of the proposed novel strategy to achieve an excellent sensing performance with an OFET platform.

Air-Stable and High-Performance Unipolar n-Type Conjugated Semiconducting Polymers Prepared by a "Strong Acceptor-Weak Donor" Strategy

Unipolar n-type conjugated polymer materials with long-term stable electron transport upon direct exposure to the air atmosphere are very challenging to prepare. In this study, three unipolar n-type donor-acceptor (D-A) conjugated polymer semiconductors (abbreviated as PNVB, PBABDFV, and PBAIDV) were successfully developed through a "strong acceptor-weak donor" strategy. The weak electron donation of the donor units in all three polymers successfully lowered the molecular energy levels by the acceptor units that strongly attracted electrons. Cyclic voltammetry demonstrated that all three polymers had low highest occupied molecular orbital and lowest unoccupied molecular orbital energy levels near -6.0 and -4.0 eV, respectively. These results were consistent with the density functional theory calculations. The as-prepared polymers were then used to manufacture organic field-effect transistor (OFET) devices in bottom-gate/top-contact (BG/TC) configuration without any packaging protection. As expected, all devices exhibited unipolar electron transport properties. PBABDFV-based devices showed excellent field-effect performance and air stability, beneficial for straight-line molecular chain and closest π-π stacking distance to prevent water vapor and oxygen from diffusion into the active layer. This led to a maximum electron mobility (μ_e,max) of 0.79 cm² V^-1 s^-1 under air conditions. In addition, 0.50 cm² V^-1 s^-1 was still maintained after 27 days of storage in ambient environment. The near-ideal transfer curve of the PBABDFV-based OFET device in BG/TC configuration under vacuum was obtained with average mobility reliability factor (r_ave) reaching 88%.

Exploring the Critical Thickness of Organic Semiconductor Layer for Enhanced Piezoresistive Sensitivity in Field-Effect Transistor Sensors

Organic semiconductors (OSCs) are promising transducer materials when applied in organic field-effect transistors (OFETs) taking advantage of their electrical properties which highly depend on the morphology of the semiconducting film. In this work, the effects of OSC thickness (ranging from 5 to 15 nm) on the piezoresistive sensitivity of a high-performance p-type organic semiconductor, namely dinaphtho [2,3-b:2,3-f] thieno [3,2–b] thiophene (DNTT), were investigated. Critical thickness of 6 nm thin film DNTT, thickness corresponding to the appearance of charge carrier percolation paths in the material, was demonstrated to be highly sensitive to mechanical strain. Gauge factors (GFs) of 42 ± 5 and −31 ± 6 were measured from the variation of output currents of 6 nm thick DNTT-based OFETs engineered on top of polymer cantilevers in response to compressive and tensile strain, respectively. The relationship between the morphologies of the different thin films and their corresponding piezoresistive sensitivities was discussed.

Selective Ammonia-Sensing Platforms Based on a Solution-Processed Film of Poly(3-Hexylthiophene) and p-Doping Tris(Pentafluorophenyl)Borane

Here, we fabricate ammonia sensors based on organic transistors by using poly(3-hexylthiophene) (P3HT) blended with tris(pentafluorophenyl)borane (TPFB) as an active layer. As TPFB is an efficient p-type dopant for P3HT, the current level of the blend films can be easily modulated by controlling the blend ratio. The devices exhibit significantly increased on-state and off-state current levels owing to the ohmic current originated from the large number of charge carriers when the active polymer layer contains TPFB with concentrations up to 20 wt % (P3HT:TPFB = 8:2). The current is decreased at 40 wt % of TPFB (P3HT:TPFB = 6:4). The P3HT:TPFB blend with a weight ratio of 9:1 exhibits the highest sensing performances for various concentrations of ammonia. The device exhibits an increased percentage current response compared to that of a pristine P3HT device. The current response of the P3HT:TPFB (9:1) device at 100 ppm of ammonia is as high as 65.8%, 3.2 times that of the pristine P3HT (20.3%). Furthermore, the sensor based on the blend exhibits a remarkable selectivity to ammonia with respect to acetone, methanol, and dichloromethane, owing to the strong interaction between the Lewis acid (TPFB) and Lewis base (ammonia).

A Humid-Air-Operable, NO2-Responsive Polymer Transistor Series Circuit with Improved Signal-to-Drift Ratio Based on Polymer Semiconductor Oxidation

A subparts per million-sensitive nitrogen dioxide (NO₂) sensing circuit with improved humid air stability was realized incorporating UV-ozone treatment on a poly(bisdodecylquaterthiophene)/polystyrene blend film. The circuit consisted of a pair of organic field-effect transistors (OFETs) in series, one OFET with and one without this treatment. In contrast to most previous OFET sensors, the readout was obtained from the voltage V_out at a point between the OFETs. The circuit showed a low detection limit (200 ppb) toward NO₂ and greatly reduced the voltage drift in the humid environment compared to the current drift of the circuit or the individual OFETs because of the balance of conductance drifts on either side of the readout point, which differs from the existing OFET-based sensors. By using V_out as the detection parameter, the sensitivity of the circuit approaches 25 and 400% for NO₂ concentrations of 200 ppb and 20 ppm, respectively. Moreover, the V_out is substantial enough to be easily measured by a voltmeter, which could remove the need for complex equipment (semiconductor analyzer system) for the sensing test. We thus demonstrate a simplified approach to stabilized OFET circuits that could be used in printable, flexible, or wearable sensors.

Low-Temperature Solution-Processed Soluble Polyimide Gate Dielectrics: From Molecular-Level Design to Electrically Stable and Flexible Organic Transistors

Aromatic soluble polyimides (PIs) have been widely used in organic field-effect transistors (OFETs) as gate dielectric layers due to their promising features such as outstanding chemical resistance, thermal stability, low-temperature processability, and mechanical flexibility. However, the molecular structures of soluble PIs on the electrical characteristics of OFETs are not yet fully understood. In this work, the material, dielectric, and electrical properties are evaluated to systematically investigate the chemical structure effect of aromatic dianhydride and diamine monomers on the device performance. Four soluble PIs based on 4,4'-(Hexafluoroisopropylidene)diphthalic anhydride (6FDA) and 5-(2,5-Dioxotetrahydrofuryl)-3-methyl-3-cyclohexene-1,2-dicarboxylic anhydride, in which the monomeric precursors contain different backbones, side groups, and linkages, were employed to compare the chemical structure impact. The dielectric properties, which significantly affect the charge transport and crystallinity of OSC thin films, clearly depended on the soluble PI types as well as the surface energy and the thermal stability. Furthermore, the electrical characteristic measurement and parameter extraction of OFETs based on TIPS-pentacene revealed that the 6FDA-based soluble PIs, which lead to high field-effect mobility, near-zero threshold electric field, and outstanding electrical stability under bias stress, are the most promising gate dielectric candidates. Finally, low-temperature solution-processed OFETs are successfully integrated with ultrathin flexible substrates, and they exhibit no significant electrical performance loss after mechanical flexibility tests. This work presents a step forward in the development of soluble PI gate dielectrics for flexible electronic devices with high device performance.

Large-Area MXene Electrode Array for Flexible Electronics

MXenes, an emerging class of two-dimensional (2D) transition metal carbides and nitrides, have potential for application as high-performance, low-cost electrodes in organic field-effect transistors (OFETs) because of their water dispersibility, high conductivity, and work-function tunability. In this study, we successfully fabricated a large-scale, uniform Ti₃C₂T_x MXene electrode array on a flexible plastic substrate for application in high-performance OFETs. The work function of the Ti₃C₂T_x MXene electrodes was also effectively modulated via chemical doping with NH₃. The fabricated OFETs with Ti₃C₂T_x MXene electrodes exhibited excellent device performance, such as a maximum carrier mobility of ∼1 cm²·V^-1·s^-1 and an on-off current ratio of ∼10⁷ for both p-type and n-type OFETs, even though all the electrode and dielectric layers were fabricated on the plastic substrate by solution processing. Furthermore, MXene-electrode-based complementary logic circuits, such as NOT, NAND, and NOR, were fabricated via integration of p-type and n-type OFETs. The proposed approach is expected to expand the application range of MXenes to other OFET-based electronic devices, such as organic light-emitting displays and electronic skins.

Gas-Induced Ion-Free Stable Radical Anion Formation of Organic Semiconducting Solids as Highly Gas-Selective Probes

The formation of stabilized radical anions on organic materials in the solid state is an important issue in radical-based fundamental research and various applications. Herein, for the first time, we report on gas-induced ion-free stable radical anion formation (SRAF) of organic semiconducting solids with high gas selectivities through the use of organic field-effect transistor (OFET) gas sensors and electron spin resonance spectroscopy. In contrast to the previously reported SRAF, which requires either anionic analytes in solution and/or cationic substituents on π-electron-deficient aromatic cores, NDI-EWGs consist of an n-type semiconducting naphthalene diimide (NDI) and various electron-withdrawing groups (EWGs) that exhibit non-ion-involved, gas-selective SRAF in the solid state. In the presence of hard Lewis base gases, NDI-EWG-based OFETs exhibit enhanced conductivity (Current-ON mode) through the formation of an SRAF NDI/gas complex, while in the presence of borderline and soft Lewis base gases, NDI-EWG-based OFETs show decreased conductivity (Current-OFF mode) by the formation of a resistive NDI/gas complex. Organic semiconducting solids with EWGs exhibiting highly gas-selective solid-SRAF constitute a very promising platform for radical-based chemistry and can be used in various applications, such as highly gas-selective probes.

Solvent Effects on Morphology and Electrical Properties of Poly(3-hexylthiophene) Electrospun Nanofibers

Herein, poly(3-hexylthiophene-2,5-diyl) (P3HT) nanofiber-based organic field-effect transistors were successfully prepared by coaxial electrospinning technique with P3HT as the core polymer and poly(methyl methacrylate) (PMMA) as the shell polymer, followed by extraction of PMMA. Three different solvents for the core polymer, including chloroform, chlorobenzene and 1,2,4-trichlorobenzene, were employed to manipulate the morphologies and electrical properties of P3HT electrospun nanofibers. Through the analyses from dynamic light scattering of P3HT solutions, polarized photoluminescence and X-ray diffraction pattern of P3HT electrospun nanofibers, it is revealed that the P3HT electrospun nanofiber prepared from the chloroform system displays a low crystallinity but highly oriented crystalline grains due to the dominant population of isolated-chain species in solution that greatly facilitates P3HT chain stretching during electrospinning. The resulting high charge-carrier mobility of 3.57 × 10⁻¹ cm²·V⁻¹·s⁻¹ and decent mechanical deformation up to a strain of 80% make the P3HT electrospun nanofiber a promising means for fabricating stretchable optoelectronic devices.

Two-in-One Device with Versatile Compatible Electrical Switching or Data Storage Functions Controlled by the Ferroelectricity of P(VDF-TrFE) via Photocrosslinking

Organic electronics demand new platforms that can make integrated circuits and undergo mass production while maintaining diverse functions with high performance. The field-effect transistor has great potential to be a multifunctional device capable of sensing, data processing, data storage, and display. Currently, transistor-based devices cannot be considered intrinsic multifunctional devices because all installed functions are mutually coupled. Such incompatibilities are a crucial barrier to developing an all-in-one multifunctional device capable of driving each function individually. In this study, we focus on the decoupling of electric switching and data storage functions in an organic ferroelectric memory transistor. To overcome the incompatibility of each function, the high permittivity needed for electrical switching and the ferroelectricity needed for data storage become compatible by restricting the motion of poly(vinylidene fluoride-trifluoroethylene) via photocrosslinking with bis-perfluorobenzoazide. The two-in-one device consisting of a photocrosslinked ferroelectric layer exhibits reversible and individual dual-functional operation as a typical transistor with nonvolatile memory. Moreover, a p-MOS depletion load inverter composed of the two transistors with different threshold voltages is also demonstrated by simply changing only one of the threshold voltages by polarization switching. We believe that the two-in-one device will be considered a potential component of integrated organic logic circuits, including memory, in the future.

Low-Voltage Organic Transistor Memory Fiber with a Nanograined Organic Ferroelectric Film

Wearable technology offers new ways to be more proactive about our health and surroundings in real time. For next-generation wearable systems, robust storage and recording media are required to monitor and process the essential electrical signals generated under various unpredictable strain conditions. Here, we report the first fibriform organic transistor memory integrated on a thin and flexible metal wire. A capillary tube coating system allows the formation of a thin and nanograined organic ferroelectric film on the wire. The uniform morphology imparts excellent switching stability (∼100 cycles), quasi-permanent retention (over 5 × 10⁴ s), and low-voltage operation (below 5 V) to the fiber-shaped memory devices. When sewn in a stretchable textile fabric, the memory fiber achieves long retention time of more than 10⁴ s with negligible degradation of memory window even under a constant diagonal strain of 100% that exhibits reliable data storage under tough environments. These results illustrate the possibility of the practical, wearable fiber memory for recording electronic signals in smart garment applications.

Influences of Structural Modification of S, N-Hexacenes on the Morphology and OFET Characteristics

Although chemical modifications on conjugated molecules are widely applied for the purpose of improving processability and device performances, the effect of the modification was far less investigated. Here, five S, N-hexacenes are studied to reveal the influences of (1) the lateral alkyl chain, (2) the terminal group (thiophene vs benzene), and (3) the end-capping phenyl group of the hexacenes on the morphology and organic field-effect transistor (OFET) performances. Crystal arrays of the hexacenes were prepared via polydimethylsiloxane (PDMS)-assisted crystallization (PAC) prior to morphological and OFET characterizations. The lattice structures and crystal quality of the hexacenes were evaluated by microscopy and diffraction techniques including single-crystal diffractometer, electron diffraction, and grazing incidence wide-angle X-ray scattering. The systematic analyses led to the following conclusions: (1) the bulkier alkyl side chain assists to form more densely packed crystals with less structural defects; (2) the terminal thiophene rings bring about higher-lying E_HOMO, more ordered phase, and crystal orientation, whereas the terminal benzene rings deteriorate the structural order of the active layer and result in the liquid crystal phase; and (3) the phenyl end caps ameliorate the morphological order, intermolecular overlapping, thermal stability and elevate E_HOMO. Thus, EH-DTPTt-Ph delivers the highest μ_h, contributing to high-lying E_HOMO, well-oriented crystal array with a longer correlation length, and suitable lattice orientation. This systematic research provides the aspects about the effects of the functionalized S, N-hexacenes on the morphology and OFET characteristics, which is anticipated to be useful for the molecular design of heteroacenes.

Pristine Poly( para-phenylene): Relating Semiconducting Behavior to Kinetics of Precursor Conversion

We investigated unsubstituted poly( para-phenylene) (PPP), a long-desired prototype of a conjugated polymer semiconductor. PPP was accessed via thermal aromatization of a precursor polymer bearing kinked, solubility-inducing dimethoxycyclohexadienylene moieties. IR spectroscopy and Vis ellipsometry studies revealed that the rate of conversion of the precursor to PPP increases with temperature and decreases with film density, indicating a process with high activation volume. The obtained PPP films were analyzed in thin-film transistors to gain insights into the interplay between the degree of conversion and the resulting p-type semiconducting properties. The semiconducting behavior of PPP was further unambiguously proven through IR and transistor measurements of molybdenum trioxide p-doped films.

Influence of Backbone Chlorination on the Electronic Properties of Diketopyrrolopyrrole (DPP)-Based Dimers

Chlorination of π-conjugated backbones is garnering great interest because of fine-tuning electronic properties of conjugated materials for organic devices. Herein we report a synthesis of thiophene-based diketopyrrolopyrrole (DPP) dimers and their chlorinated counterparts by introducing a chlorine atom in the outer thiophene ring to investigate the influence of the chlorination on charge transport. The backbone chlorination lowers both the HOMO and the LUMO of the dimers and leads to a blue-shift of maximum absorption in compared to unsubstituted counterparts. X-ray analysis reveals that the chlorine atom prompts the outer thiophene ring out of the planarity of the backbone with a relatively large torsional angle. The chlorinated dimers exhibit slipped one-dimensional packing decorated with multiple intermolecular interactions, because of a combination of a negative inductive effect and a positive mesomeric effect of the halogen atom, which might facilitate charge transport within the oligomeric backbones. The mobility in the single-crystal OFET devices of the chlorinated dimers is up to 1.5 cm²  V^-1  s^-1 , which is two times higher than that of the non-chlorinated DPP dimers. Our results indicate that the chlorine atom plays a key role in directing non-covalent interactions to lock the slipped stacks, enabling electronic coupling between adjacent molecules for efficient charge transport. In addition, our results also demonstrate that these DPP dimers with straight n-octyl chains exhibit higher mobilities than the dimers with branched 2-ethylhexyl chains.

Solution-Processed Nonvolatile Organic Transistor Memory Based on Semiconductor Blends

Solution-processed nonvolatile organic transistor memory devices are fabricated by employing semiconductor blends of p-channel 6,13-bis(triisopropylsilylethynyl)pentacene and n-channel poly{[ N, N'-bis(2-octyldodecyl)-naphthalene-1,4,5,8-bis(dicarboximide)-2,6-diyl]- alt-5,5'-(2,2'-bithiophene)} (P(NDI2OD-2T); N2200) on polystyrene-brush as a polymer electret. Electret-based memory characteristics are significantly changed depending on the frontier molecular orbitals of the active semiconductors because the charge-trapping efficiency is mainly determined by the energy barrier to transfer electrons and holes from the active channel to the electret layer. A semiconductor mixture with an optimized blending ratio results in an efficient programming and erasing process. Thus, we obtained a remarkably high ratio of ON/OFF current (memory ratio) about 10⁷ and a large amount of shifts in the threshold voltage (memory window) between the programmed and erased states of 55 V, while single-component N2200 showed only writing-once-read-many (WORM)-type memory. Especially, the programmed data can be stably retained more than 10 years with a sufficient memory ratio of 10³. Furthermore, our semiconductor blend system leads to preferable vertical phase separation, which affords good reliability under a sequential memory operation condition as well as stability in ambient air. It is expected that our memory devices can be applied for versatile data storage in printed and flexible electronic applications.

Large-Size Single-Crystal Oligothiophene-Based Monolayers for Field-Effect Transistors

High structural quality of crystalline organic semiconductors is the basis of their superior electrical performance. Recent progress in quasi two-dimensional (2D) organic semiconductor films challenges bulk single crystals because both demonstrate competing charge-carrier mobilities. As the thinnest molecular semiconductors, monolayers offer numerous advantages such as unmatched flexibility and light transparency as well  they are an excellent platform for sensing. Oligothiophene-based materials are among the most promising ones for light-emitting applications because of the combination of efficient luminescence and decent charge-carrier mobility. Here, we demonstrate single-crystal monolayers of unprecedented structural order grown from four alkyl-substituted thiophene and thiophene-phenylene oligomers. The monolayer crystals with lateral dimensions up to 3 mm were grown from the solution on substrates with various surface energies and roughness by drop or spin-casting with subsequent slow solvent evaporation. Our data indicate that 2D crystallization resulting in single-crystal monolayers occurs at the receding gas-solution-substrate contact line. The structural properties of the monolayers were studied by grazing-incidence X-ray diffraction/reflectivity, atomic force and differential interference contrast microscopies, and imaging spectroscopic ellipsometry. These highly ordered monolayers demonstrated an excellent performance in organic field-effect transistors approaching the best values reported for the thiophene or thiophene-phenylene oligomers. Our findings pave the way for efficient monolayer organic electronics highlighting the high potential of simple solution-processing techniques for the growth of large-size single-crystal monolayers with excellent structural order and electrical performance competing against bulk single crystals.

Nanocomposite-parylene C thin films with high dielectric constant and low losses for future organic electronic devices

Nanocomposite-parylene C (NCPC) thin films were deposited with a new technique based on the combination of chemical vapor deposition (CVD) for parylene C deposition and RF-magnetron sputtering for silver deposition. This method yields good dispersion of Ag-containing nanoparticles inside the parylene C polymer matrix. Film composition and structure were studied by using several techniques. It was found that the plasma generated by the RF-magnetron reactor modifies the film density as well as the degree of crystallinity and the size of parylene C crystallites. Moreover, silver is incorporated in the parylene matrix as an oxide phase. The average size of the Ag oxide nanoparticles is lower than 20 nm and influences the roughness of the NCPC films. Samples with various contents and sizes of silver-oxide nanoparticles were investigated by broadband dielectric spectroscopy (BDS) in view of their final application. It was found that both the content and the size of the nanoparticles influence the value of the dielectric constant and the frequency-dependence of the permittivity. In particular, β-relaxation is affected by the addition of nanoparticles as well as the dissipation factor, which is even improved. A dielectric constant of 5 ± 1 with a dissipation factor of less than 0.045 in the range from 0.1 Hz to 1 MHz is obtained for a 2.7 µm thick NCPC with 3.8% Ag content. This study provides guidance for future NCPC materials for insulating gates in organic field-effect transistors (OFETs) and advanced electronic applications.

Synergistic Effects of Processing Additives and Thermal Annealing on Nanomorphology and Hole Mobility of Poly(3-hexylthiophene) Thin Films

Control of the nanoscale molecular ordering and charge-carrier mobility of poly(3-hexylthiophene-2,5-diyl) (P3HT) was achieved by the combined use of processing additives and thermal annealing. Evaluation of four processing additives (1,8-octanedithiol (ODT), diphenyl ether (DPE), 1-chloronaphthalene (CN), and 1,8-diiodooctane (DIO), which are commonly used for the fabrication of organic solar cells, revealed that the nanoscale molecular ordering and, therefore, the charge-carrier mobility, are largely affected by the additives, as demonstrated by spectral absorption, X-ray diffraction, and atomic force microscopy. Thermal annealing selectively influenced the morphological changes, depending on the solubility of P3HT in the additive at high temperature. In the case of CN, in which P3HT can be dissolved at moderate temperature, significant molecular ordering was observed even without thermal annealing. For DIO, in which P3HT is only soluble at elevated temperature, the mobility reached 1.14 × 10^-1 cm² V^-1 s^-1 only after annealing. ODT and DPE were not effective as processing additives in a single-component P3HT. This study provides insight for designing the processing conditions to control the morphology and charge-transport properties of polymers.

Inch-Scale Grain Boundary Free Organic Crystals Developed by Nucleation Seed-Controlled Shearing Method

Crystals of organic semiconductors are excellent candidates for flexible and array-based electronics. Large-scale synthesis of organic crystals in a controllable way while maintaining homogeneous single-crystal property has been a great challenge. The existence of grain boundaries and small crystal domains, however, restrict the device performance and limit the access to commercially viable organic electronics in the industry. Herein, we report the inch-scale synthesis of highly oriented 2,7-dioctyl[1]benzothieno[3,2- b][1]benzothiophene (C₈-BTBT) organic single crystal by nucleation seed-controlled shearing method. The organic field-effect transistors developed from such single crystal have excellent carrier mobility as high as 14.9 cm² V^-1 s^-1 and uniformity (standard deviation is 1.3 cm² V^-1 s^-1) of 225 devices. We also found that the rotation of the principal axis in the crystal is governed by the orientations of seeds and the possible mechanism behind this phenomenon is proposed based on the density functional theory calculations. We anticipate that this proposed approach will have great potential to be developed as a platform for the growth of organic crystals with high crystallinity on a large scale.

Low-Voltage Organic Single-Crystal Field-Effect Transistor with Steep Subthreshold Slope

Anodization is a promising technique to form high- k dielectrics for low-power organic field-effect transistor (OFET) applications. However, the surface quality of the dielectric, which is mainly inherited from the metal electrode, can be improved further than other fabrication techniques, such as sol-gel. In this study, we applied the template stripping method to fabricate a low-power single-crystalline OFET based on the anodized AlO _x dielectric. We found that the template stripping method largely improves the surface roughness of the deposited Al and allows for the formation of a high-quality AlO _x high- k dielectric by anodization. The ultraflat AlO _x/SAM dielectric combined with a single-crystal 2,6-diphenylanthracene (DPA) semiconductor produced a nearly defect-free interface with a steep subthreshold swing (SS) of 66 mV/decade. The current device is a promising candidate for future ultralow-power applications. Other than metal deposition, template stripping could provide a general approach to improve thin-film quality for many other types of materials and processes.