Key Roles of Interfaces in Inverted Metal-Halide Perovskite Solar Cells

Metal-halide perovskite solar cells (PSCs), an emerging technology for transforming solar energy into a clean source of electricity, have reached efficiency levels comparable to those of commercial silicon cells. Compared with other types of PSCs, inverted perovskite solar cells (IPSCs) have shown promise with regard to commercialization due to their facile fabrication and excellent optoelectronic properties. The interlayer interfaces play an important role in the performance of perovskite cells, not only affecting charge transfer and transport, but also acting as a barrier against oxygen and moisture permeation. Herein, we describe and summarize the last three years of studies that summarize the advantages of interface engineering-based advances for the commercialization of IPSCs. This review includes a brief introduction of the structure and working principle of IPSCs, and analyzes how interfaces affect the performance of IPSC devices from the perspective of photovoltaic performance and device lifetime. In addition, a comprehensive summary of various interface engineering approaches to solving these problems and challenges in IPSCs, including the use of interlayers, interface modification, defect passivation, and others, is summarized. Moreover, based upon current developments and breakthroughs, fundamental and engineering perspectives on future commercialization pathways are provided for the innovation and design of next-generation IPSCs.

Effects of thermal annealing on the distribution of boron and phosphorus in p-i-n structured silicon nanocrystals embedded in silicon dioxide

Thermal annealing temperature and time dictate the microstructure of semiconductor materials such as silicon nanocrystals (Si NCs). Herein, atom probe tomography (APT) and density functional theory (DFT) calculations are used to understand the thermal annealing temperature effects on Si NCs grown in a SiO₂matrix and the distribution behaviour of boron (B) and phosphorus (P) dopant atoms. The APT results demonstrate that raising the annealing temperature promotes growth and increased P concentration of the Si NCs. The data also shows that the thermal annealing does not promote the incorporation of B atoms into Si NCs. Instead, B atoms tend to locate at the interface between the Si NCs and SiO₂matrix. The DFT calculations support the APT data and reveal that oxygen vacancies regulate Si NC growth and dopant distribution. This study provides the detailed microstructure of p-type, intrinsic, and n-type Si NCs with changing annealing temperature and highlights how B and P dopants preferentially locate with respect to the Si NCs embedded in the SiO₂matrix with the aid of oxygen vacancies. These findings will be useful towards future optoelectronic applications.