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Gao W, Liu S, Chen Y, Niu K, Lu Z, Li Z, Zeng Z, Xiao Y, Zhai Y, Liu Y, Wang Y. Solid-State Anion Exchange Enabled by Pluggable vdW Assembly for In Situ Halide Manipulation in Perovskite Monocrystalline Film. Small 2024:e2402159. [PMID: 38678535 DOI: 10.1002/smll.202402159] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/19/2024] [Revised: 04/13/2024] [Indexed: 05/01/2024]
Abstract
The fabrication of perovskite single crystal-based optoelectronics with improved performance is largely hindered by limited processing techniques. Particularly, the local halide composition manipulation, which dominates the bandgap and thus the formation of heterostructures and emission of multiple-wavelength light, is realized via prevalent liquid- or gas-phase anion exchange with the utilization of lithography, while the monocrystalline nature is sacrificed due to polycrystalline transition in exchange with massive defects emerging, impeding carrier separation and transportation. Thus, a damage-free and lithography-free solid-state anion exchange strategy, aiming at in situ halide manipulation in perovskite monocrystalline film, is developed. Typically, CsPbCl3 working as medium to deliver halide is van der Waals (vdW) assembled to specific spots of CsPbBr3, followed by the removal of CsPbCl3 after anion exchange, with the halide composition in contact area modulated and monocrystalline nature of CsPbBr3 preserved. CsPbBr3-CsPbBrxCl3-x monocrystalline heterostructure has been achieved without lithography. Device based on the heterostructure shows apparent rectification behavior and improved photo-response rate. Heterostructure arrays can also be constructed with customized medium crystal. Furthermore, the halide composition can be accurately tuned to enable full coverage of visible spectra. The solid-state exchange enriches the toolbox for processing vulnerable perovskite and paves the way for the integration of monocrystalline perovskite optoelectronics.
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Affiliation(s)
- Weiqi Gao
- Key Laboratory for Micro-Nano Optoelectronic Devices of Ministry of Education, School of Physics and Electronics, Hunan University, Changsha, 410082, China
| | - Songlong Liu
- Key Laboratory for Micro-Nano Optoelectronic Devices of Ministry of Education, School of Physics and Electronics, Hunan University, Changsha, 410082, China
| | - Yang Chen
- Key Laboratory for Micro-Nano Optoelectronic Devices of Ministry of Education, School of Physics and Electronics, Hunan University, Changsha, 410082, China
| | - Kaixin Niu
- Key Laboratory for Micro-Nano Optoelectronic Devices of Ministry of Education, School of Physics and Electronics, Hunan University, Changsha, 410082, China
| | - Zheyi Lu
- Key Laboratory for Micro-Nano Optoelectronic Devices of Ministry of Education, School of Physics and Electronics, Hunan University, Changsha, 410082, China
| | - Zhiwei Li
- Key Laboratory for Micro-Nano Optoelectronic Devices of Ministry of Education, School of Physics and Electronics, Hunan University, Changsha, 410082, China
| | - Zhiyao Zeng
- Key Laboratory of Low-Dimensional Quantum Structures and Quantum Control of Ministry of Education, Department of Physics, Hunan Normal University, Changsha, 410081, China
| | - Yulong Xiao
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, College of Materials Science and Engineering and Hunan Institute of Optoelectronic Integration, Hunan University, Changsha, 410082, P. R. China
| | - Yaxin Zhai
- Key Laboratory of Low-Dimensional Quantum Structures and Quantum Control of Ministry of Education, Department of Physics, Hunan Normal University, Changsha, 410081, China
| | - Yuan Liu
- Key Laboratory for Micro-Nano Optoelectronic Devices of Ministry of Education, School of Physics and Electronics, Hunan University, Changsha, 410082, China
| | - Yiliu Wang
- Key Laboratory for Micro-Nano Optoelectronic Devices of Ministry of Education, School of Physics and Electronics, Hunan University, Changsha, 410082, China
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