In Situ Monitoring of Pulsed Laser Annealing of Eu-Doped Oxide Thin Films

Eu³⁺-doped oxide thin films possess a great potential for several emerging applications in optics, optoelectronics, and sensors. The applications demand maximizing Eu³⁺ photoluminescence response. Eu-doped ZnO, TiO_2, and Lu₂O₃ thin films were deposited by Pulsed Laser Deposition (PLD). Pulsed UV Laser Annealing (PLA) was utilized to modify the properties of the films. In situ monitoring of the evolution of optical properties (photoluminescence and transmittance) at PLA was realized to optimize efficiently PLA conditions. The changes in optical properties were related to structural, microstructural, and surface properties characterized by X-ray diffraction (XRD) and atomic force microscopy (AFM). The substantial increase of Eu³⁺ emission was observed for all annealed materials. PLA induces crystallization of TiO₂ and Lu₂O₃ amorphous matrix, while in the case of already nanocrystalline ZnO, rather surface smoothening0related grains’ coalescence was observed.

Surface-Enhanced Raman Spectroscopy (SERS) of Neonicotinoid Insecticide Thiacloprid Assisted by Silver and Gold Nanostructures

This study expresses our results on surface-enhanced Raman spectroscopy (SERS) analyses of neonicotinoid insecticide thiacloprid, i.e., Calypso 480 SC, in quantities much smaller than usually applied in the agricultural medicine. Advanced Ag and Au nanostructures created by the thermal deposition technique on Al₂O₃ ceramic were applied as active substrates for SERS analyses. The minimum concentration of thiacloprid detected was 380 µM and the enhancement factor was estimated to be about 3 × 10³. The intensity of the SERS peaks increased by an order of magnitude after pulsed laser annealing of the films and formation of nanoparticle arrays and the enhancement factor reached ≈10⁴, respectively. The proposed study has direct bearing on the environment and human health by detection of small amounts or residue of harmful pollutants using a relatively cheap and easy method to produce active SERS substrates.

Steep-Slope Threshold Switch Enabled by Pulsed-Laser-Induced Phase Transformation

Super-steep two-terminal electronic devices using NbO₂, which abruptly switch from insulator to metal at a threshold voltage (V_th), offer diverse strategies for energy-efficient and high-density device architecture to overcome fundamental limitation in current electronics. However, the tight control of stoichiometry and high-temperature processing limit practical implementation of NbO₂ as a component of device integration. Here, we demonstrate a facile room-temperature process that uses solid-solid phase transformation induced by pulsed laser to fabricate NbO₂-based threshold switches. Interestingly, pulsed laser annealing under a reducing environment facilitates a two-step nucleation pathway (a-Nb₂O₅ → o-Nb₂O_5-δ → t-NbO₂) of the threshold-enabled NbO₂ phase mediated by oxygen vacancies in o-Nb₂O_5-δ. The laser-annealed devices with embedded NbO₂ crystallites exhibit excellent threshold device performance with low off-current and high on/off current ratio. Our strategy that exploits the interactions of pulsed lasers with multivalent metal oxides can guide the development of a rational route to achieve NbO₂-based threshold switches that are compatible with current semiconductor fabrication technology.

Ferromagnetic Mn-Implanted GaP: Microstructures vs Magnetic Properties

Ferromagnetic GaMnP layers were prepared by ion implantation and pulsed laser annealing (PLA). We present a systematic investigation on the evolution of microstructure and magnetic properties depending on the pulsed laser annealing energy. The sample microstructure was analyzed by high-resolution X-ray diffraction (HR-XRD), transmission electron microscopy (TEM), Rutherford backscattering spectrometry (RBS), ultraviolet Raman spectroscopy (UV-RS), and extended X-ray absorption fine structure (EXAFS) spectroscopy. The presence of X-ray Pendellösung fringes around GaP (004) and RBS channeling prove the epitaxial structure of the GaMnP layer annealed at the optimized laser energy density (0.40 J/cm(2)). However, a forbidden TO vibrational mode of GaP appears and increases with annealing energy, suggesting the formation of defective domains inside the layer. These domains mainly appear in the sample surface region and extend to almost the whole layer with increasing annealing energy. The reduction of the Curie temperature (TC) and of the uniaxial magnetic anisotropy gradually happens when more defects and the domains appear as increasing the annealing energy density. This fact univocally points to the decisive role of the PLA parameters on the resulting magnetic characteristics in the processed layers, which eventually determine the magnetic (or spintronics) figure of merit.

Single-Layer Graphene as a Barrier Layer for Intense UV Laser-Induced Damages for Silver Nanowire Network

Single-layer graphene (SLG) has been proposed as the thinnest protective/barrier layer for wide applications involving resistance to oxidation, corrosion, atomic/molecular diffusion, electromagnetic interference, and bacterial contamination. Functional metallic nanostructures have lower thermal stability than their bulk forms and are therefore susceptible to high energy photons. Here, we demonstrate that SLG can shield metallic nanostructures from intense laser radiation that would otherwise ablate them. By irradiation via a UV laser beam with nanosecond pulse width and a range of laser intensities (in millions of watt per cm(2)) onto a silver nanowire network, and conformally wrapping SLG on top of the nanowire network, we demonstrate that graphene "extracts and spreads" most of the thermal energy away from nanowire, thereby keeping it damage-free. Without graphene wrapping, the radiation would fragment the wires into smaller pieces and even decompose them into droplets. A systematic molecular dynamics simulation confirms the mechanism of SLG shielding. Consequently, particular damage-free and ablation-free laser-based nanomanufacturing of hybrid nanostructures might be sparked off by application of SLG on functional surfaces and nanofeatures.

Nanostructuring of GeTiO amorphous films by pulsed laser irradiation

Laser pulse processing of surfaces and thin films is a useful tool for amorphous thin films crystallization, surface nanostructuring, phase transformation and modification of physical properties of thin films. Here we show the effects of nanostructuring produced at the surface and under the surface of amorphous GeTiO films through laser pulses using fluences of 10-30 mJ/cm(2). The GeTiO films were obtained by RF magnetron sputtering with 50:50 initial atomic ratio of Ge:TiO2. Laser irradiation was performed by using the fourth harmonic (266 nm) of a Nd:YAG laser. The laser-induced nanostructuring results in two effects, the first one is the appearance of a wave-like topography at the film surface, with a periodicity of 200 nm and the second one is the structure modification of a layer under the film surface, at a depth that is related to the absorption length of the laser radiation. The periodicity of the wave-like relief is smaller than the laser wavelength. In the modified layer, the Ge atoms are segregated in spherical amorphous nanoparticles as a result of the fast diffusion of Ge atoms in the amorphous GeTiO matrix. The temperature estimation of the film surface during the laser pulses shows a maximum of about 500 °C, which is much lower than the melting temperature of the GeTiO matrix. GeO gas is formed at laser fluences higher than 20 mJ/cm(2) and produces nanovoids in the laser-modified layer at the film surface. A glass transition at low temperatures could happen in the amorphous GeTiO film, which explains the formation of the wave-like topography. The very high Ge diffusivity during the laser pulse action, which is characteristic for liquids, cannot be reached in a viscous matrix. Our experiments show that the diffusivity of atomic and molecular species such as Ge and GeO is very much enhanced in the presence of the laser pulse field. Consequently, the fast diffusion drives the formation of amorphous Ge nanoparticles through the segregation of Ge atoms in the GeTiO matrix. The nanostructuring effects induced by the laser irradiation can be used in functionalizing the surface of the films.