Near-Infrared Annihilation of Conductive Filaments in Quasiplane MoSe
2 /Bi
2 Se
3 Nanosheets for Mimicking Heterosynaptic Plasticity.
SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2019;
15:e1805431. [PMID:
30653280 DOI:
10.1002/smll.201805431]
[Citation(s) in RCA: 12] [Impact Index Per Article: 2.4] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/20/2018] [Indexed: 06/09/2023]
Abstract
It is desirable to imitate synaptic functionality to break through the memory wall in traditional von Neumann architecture. Modulating heterosynaptic plasticity between pre- and postneurons by another modulatory interneuron ensures the computing system to display more complicated functions. Optoelectronic devices facilitate the inspiration for high-performance artificial heterosynaptic systems. Nevertheless, the utilization of near-infrared (NIR) irradiation to act as a modulatory terminal for heterosynaptic plasticity emulation has not yet been realized. Here, an NIR resistive random access memory (RRAM) is reported, based on quasiplane MoSe2 /Bi2 Se3 heterostructure in which the anomalous NIR threshold switching and NIR reset operation are realized. Furthermore, it is shown that such an NIR irradiation can be employed as a modulatory terminal to emulate heterosynaptic plasticity. The reconfigurable 2D image recognition is also demonstrated by an RRAM crossbar array. NIR annihilation effect in quasiplane MoSe2 /Bi2 Se3 nanosheets may open a path toward optical-modulated in-memory computing and artificial retinal prostheses.
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