Subwavelength-Polarized Quasi-Two-Dimensional Perovskite Single-Mode Nanolaser

When approaching the subwavelength or deep subwavelength scale, there is a fundamental trade-off between the ultimate shrinking size and the performance for miniaturized lasers. Herein, to overcome this trade-off, we investigated the excitonic gain nature of quasi-two-dimensional (quasi-2D) perovskites and revealed that both singlet excitons and polarons would make nearly the entire contribution within ∼50 ps to a high net gain of 558 cm^-1. Inspired by the gain characteristic, we successfully shrank the quasi-2D perovskites laser to the subwavelength scale using only a layer of ultraviolet glue and a glass substrate in the vertical dimension. In spite of the compact and simple cavity structure, single-mode lasing with a highly linear polarization degree of 81% and a quality factor of 1635 was achieved. The extremely short cavity, excellent lasing performance, and simple structure of the quasi-2D perovskite laser are expected to provide insights into next-generation integrated laser sources.

Hemispherical Cesium Lead Bromide Perovskite Single-Mode Microlasers with High-Quality Factors and Strong Purcell Enhancement

We realized a single-mode laser with an ultra-high quality factor in individual cesium lead bromide (CsPbBr₃) perovskite micro-hemispheres fabricated by chemical vapor deposition. A series of lasing property analysis based on cavity size was reported under this material system. Due to good optical confinement capability of the whispering gallery resonant cavity and high optical gain of CsPbBr₃ perovskite micro-hemispheres, single-mode lasing behavior was achieved with an ultra-high quality factor as large as 11,460 at room temperature. To study in detail the physical effects between lasing threshold and cavity, a set of cavity size dependence photoluminescence analyses were performed. We found that the lasing threshold increases while the cavity size decreases. Time-resolved PL analysis was conducted to confirm the relation between cavity size and lasing threshold. The larger cavity stands for longer PL lifetime and indicates easier-to-achieve carrier population inversion. Strong Purcell enhancement could be further investigated by the spontaneous emission coupling factor β and internal quantum efficiency as a function of cavity size. A high β-factor of 0.37 could be obtained from a 2.2 μm diameter hemisphere microcavity and a high Purcell factor of 14 in a 1.9 μm diameter hemisphere microcavity showing strong Purcell enhancement effect in our system.

Virtual FBGs Using Saturable Absorbers for Sensing with Fiber Lasers

The spectral narrowing of Fiber Bragg Gratings (FBGs) introduced by unpumped Er-doped fiber (EDF) was analyzed for fiber lasers (FL). Owing to spatial hole burning (SHB), the spectral response of a virtual FBG can be employed for narrowing the band pass filter employed to determine the lasing wavelength of laser cavities. A common FL was mounted to analyze the spectral stability of the method, and a FL sensor for strain and temperature measurements was experimentally characterized to determine the stability of the narrowing effect achieved by the unpumped EDF, which acts as a virtual FBG. The results exhibited remarkably good narrowing effects of the spectral response of uniform FBGs.

Robust Subwavelength Single-Mode Perovskite Nanocuboid Laser

On-chip photonic information processing systems require great research efforts toward miniaturization of the optical components. However, when approaching the classical diffraction limit, conventional dielectric lasers with all dimensions in nanoscale are difficult to realize due to the ultimate miniaturization limit of the cavity length and the extremely high requirement of optical gain to overcome the cavity loss. Herein, we have succeeded in reducing the laser size to subwavelength scale in three dimensions using an individual CsPbBr₃ perovskite nanocuboid. Even though the side length of the nanocuboid laser is only ∼400 nm, single-mode Fabry-Pérot lasing at room temperature with laser thresholds of 40.2 and 374 μJ/cm² for one- and two-photon excitation has been achieved, respectively, with the corresponding quality factors of 2075 and 1859. In addition, temperature-insensitive properties from 180 to 380 K have been demonstrated. The physical volume of a CsPbBr₃ nanocuboid laser is only ∼0.49λ³ (where λ is the lasing wavelength in air). Its three-dimensional subwavelength size, excellent stable lasing performance at room temperature, frequency up-conversion ability, and temperature-insensitive properties may lead to a miniaturized platform for nanolasers and integrated on-chip photonic devices in nanoscale.

Scalable Top-Down Approach Tailored by Interferometric Lithography to Achieve Large-Area Single-Mode GaN Nanowire Laser Arrays on Sapphire Substrate

GaN nanowires are promising for optical and optoelectronic applications because of their waveguiding properties and large optical band gap. However, developing a precise, scalable, and cost-effective fabrication method with a high degree of controllability to obtain high-aspect-ratio nanowires with high optical properties and minimum crystal defects remains a challenge. Here, we present a scalable two-step top-down approach using interferometric lithography, for which parameters can be controlled precisely to achieve highly ordered arrays of nanowires with excellent quality and desired aspect ratios. The wet-etch mechanism is investigated, and the etch rates of m-planes {11̅00} (sidewalls) were measured to be 2.5 to 70 nm/h depending on the Si doping concentration. Using this method, uniform nanowire arrays were achieved over a large area (>10⁵ μm²) with an spect ratio as large as 50, a radius as small as 17 nm, and atomic-scale sidewall roughness (<1 nm). FDTD modeling demonstrated HE₁₁ is the dominant transverse mode in the nanowires with a radius of sub-100 nm, and single-mode lasing from vertical cavity nanowire arrays with different doping concentrations on a sapphire substrate was interestingly observed in photoluminescence measurements. High Q-factors of ∼1139-2443 were obtained in nanowire array lasers with a radius and length of 65 nm and 2 μm, respectively, corresponding to a line width of 0.32-0.15 nm (minimum threshold of 3.31 MW/cm²). Our results show that fabrication of high-quality GaN nanowire arrays with adaptable aspect ratio and large-area uniformity is feasible through a top-down approach using interferometric lithography and is promising for fabrication of III-nitride-based nanophotonic devices (radial/axial) on the original substrate.

Single-Mode Lasers Based on Cesium Lead Halide Perovskite Submicron Spheres

Single-mode laser is realized in a cesium lead halide perovskite submicron sphere at room temperature. All-inorganic cesium lead halide (CsPbX₃, X = Cl, Br, I) microspheres with tunable sizes (0.2-10 μm) are first fabricated by a dual-source chemical vapor deposition method. Due to smooth surface and regular geometry structure of microspheres, whispering gallery resonant modes make a single-mode laser realized in a submicron sphere. Surprisingly, a single-mode laser with a very narrow line width (∼0.09 nm) was achieved successfully in the CsPbX₃ spherical cavity at low threshold (∼0.42 μJ cm^-2) with a high cavity quality factor (∼6100), which are the best specifications of lasing modes in all natural nano/microcavities ever reported. By modulating the halide composition and sizes of the microspheres, the wavelength of a single-mode laser can be continuously tuned from red to violet (425-715 nm). This work illustrates that the well-controlled synthesis of metal cesium lead halide perovskite nano/microspheres may offer an alternative route to produce a widely tunable and greatly miniaturized single-mode laser.