Thermally induced structural evolution and performance of mesoporous block copolymer-directed alumina perovskite solar cells

Structure control in solution-processed hybrid perovskites is crucial to design and fabricate highly efficient solar cells. Here, we utilize in situ grazing incidence wide-angle X-ray scattering and scanning electron microscopy to investigate the structural evolution and film morphologies of methylammonium lead tri-iodide/chloride (CH3NH3PbI(3-x)Cl(x)) in mesoporous block copolymer derived alumina superstructures during thermal annealing. We show the CH3NH3PbI(3-x)Cl(x) material evolution to be characterized by three distinct structures: a crystalline precursor structure not described previously, a 3D perovskite structure, and a mixture of compounds resulting from degradation. Finally, we demonstrate how understanding the processing parameters provides the foundation needed for optimal perovskite film morphology and coverage, leading to enhanced block copolymer-directed perovskite solar cell performance.

Progress and Perspectives of Thin Film Kesterite Photovoltaic Technology: A Critical Review

The latest progress and future perspectives of thin film photovoltaic kesterite technology are reviewed herein. Kesterite is currently the most promising emerging fully inorganic thin film photovoltaic technology based on critical raw-material-free and sustainable solutions. The positioning of kesterites in the frame of the emerging inorganic solar cells is first addressed, and the recent history of this family of materials briefly described. A review of the fast progress achieved earlier this decade is presented, toward the relative slowdown in the recent years partly explained by the large open-circuit voltage (V_OC ) deficit recurrently observed even in the best solar cell devices in the literature. Then, through a comparison with the close cousin Cu(In,Ga)Se₂ technology, doping and alloying strategies are proposed as critical for enhancing the conversion efficiency of kesterite. In the second section herein, intrinsic and extrinsic doping, as well as alloying strategies are reviewed, presenting the most relevant and recent results, and proposing possible pathways for future implementation. In the last section, a review on technological applications of kesterite is presented, going beyond conventional photovoltaic devices, and demonstrating their suitability as potential candidates in advanced tandem concepts, photocatalysis, thermoelectric, gas sensing, etc.

Historical Analysis of High-Efficiency, Large-Area Solar Cells: Toward Upscaling of Perovskite Solar Cells

The status and problems of upscaling research on perovskite solar cells, which must be addressed for commercialization efforts to be successful, are investigated. An 804 cm² perovskite solar module has been reported with 17.9% efficiency, which is significantly lower than the champion perovskite solar cell efficiency of 25.2% reported for a 0.09 cm² aperture area. For the realization of upscaling high-quality perovskite solar cells, the upscaling and development history of conventional silicon, copper indium gallium sulfur/selenide and CdTe solar cells, which are already commercialized with modules of sizes up to ≈25 000 cm² , are reviewed. GaAs, organic, dye-sensitized solar cells and perovskite/silicon tandem solar cells are also reviewed. The similarities of the operating mechanisms between the various solar cells and the origin of different development pathway are investigated, and the ideal upscaling direction of perovskite solar cells is subsequently proposed. It is believed that lessons learned from the historical analysis of various solar cells provide a fundamental diagnosis of relative and absolute development status of perovskite solar cells. The unique perspective proposed here can pave the way toward the upscaling of perovskite solar cells.

Mixed Valence Perovskite Cs2 Au2 I6 : A Potential Material for Thin-Film Pb-Free Photovoltaic Cells with Ultrahigh Efficiency

New light is shed on the previously known perovskite material, Cs₂ Au₂ I₆ , as a potential active material for high-efficiency thin-film Pb-free photovoltaic cells. First-principles calculations demonstrate that Cs₂ Au₂ I₆ has an optimal band gap that is close to the Shockley-Queisser value. The band gap size is governed by intermediate band formation. Charge disproportionation on Au makes Cs₂ Au₂ I₆ a double-perovskite material, although it is stoichiometrically a single perovskite. In contrast to most previously discussed double perovskites, Cs₂ Au₂ I₆ has a direct-band-gap feature, and optical simulation predicts that a very thin layer of active material is sufficient to achieve a high photoconversion efficiency using a polycrystalline film layer. The already confirmed synthesizability of this material, coupled with the state-of-the-art multiscale simulations connecting from the material to the device, strongly suggests that Cs₂ Au₂ I₆ will serve as the active material in highly efficient, nontoxic, and thin-film perovskite solar cells in the very near future.

Transfer printing methods for flexible thin film solar cells: basic concepts and working principles

Fabricating thin film solar cells (TFSCs) on flexible substrates will not only broaden the applications of solar cells, but also potentially reduce the installation cost. However, a critical challenge for fabricating flexible TFSCs on flexible substrates is the incompatibility issues between the thermal, mechanical, and chemical properties of these substrates and the fabrication conditions. Transfer printing methods, which use conventional substrates for the fabrication and then deliver the TFSCs onto flexible substrates, play a key role to overcome these challenges. In this review, we discuss the basic concepts and working principles of four major transfer printing methods associated with (1) transfer by sacrificial layers, (2) transfer by porous Si layer, (3) transfer by controlled crack, and (4) transfer by water-assisted thin film delamination. We also discuss the challenges and opportunities for implementing these methods for practical solar cell manufacture.

Effect of Magnesium Incorporation on Solution-Processed Kesterite Solar Cells

The introduction of the alkaline-earth element Magnesium (Mg) into Cu₂ZnSn(S,Se)₄ (CTZSSe) is explored in view of potential photovoltaic applications. Cu₂Zn_1−xMg_xSn(S,Se)₄ absorber layers with variable Mg content x = 0…1 are deposited using the solution approach with dimethyl sulfoxide solvent followed by annealing in selenium atmosphere. For heavy Mg alloying with x = 0.55…1 the phase separation into Cu₂SnSe₃, MgSe₂, MgSe and SnSe₂ occurs in agreement with literature predictions. A lower Mg content of x = 0.04 results in the kesterite phase as confirmed by XRD and Raman spectroscopy. A photoluminescence maximum is red-shifted by 0.02 eV as compared to the band-gap and a carrier concentration N_CV of 1 × 10¹⁶ cm⁻³ is measured for a Mg-containing kesterite solar cell device. Raman spectroscopy indicates that structural defects can be reduced in Mg-containing absorbers as compared to the Mg-free reference samples, however the best device efficiency of 7.2% for a Mg-containing cell measured in this study is lower than those frequently reported for the conventional Na doping.

Kirigami-Based Highly Stretchable Thin Film Solar Cells That Are Mechanically Stable for More than 1000 Cycles

Exploiting stretchable solar cells that can accommodate large strain and feature high cyclic mechanical endurance is challenging for wearable and skin-interfaced electronics application. In this work, we demonstrated such solar cells using the kirigami design. Experiments and mechanical simulations showed that the kirigami structure effectively imparted stretchability to perovskite solar cells (PSCs) through out-of-plane deformation, which significantly reduced the stress in devices. The kirigami-based PSCs with optimal geometric parameters exhibited high mechanical deformability, including stretchability (strain up to 200%), twistability (angle up to 450°), and bendability (radius down to 0.5 mm). More importantly, the kirigami PSCs revealed high mechanical endurance with almost unchanged performance even after 1000 repetitive stretching, twisting, and bending cycles. This kirigami design for stretchable PSCs presented here provides a promising strategy to achieve high deformability for solar cells as well as other optoelectronic devices.

Modeling Thin Film Solar Cells: From Organic to Perovskite

Device model simulation is one of the primary tools for modeling thin film solar cells from organic materials to organic-inorganic perovskite materials. By directly connecting the current density-voltage (J-V) curves to the underlying device physics, it is helpful in revealing the working mechanism of the heatedly discussed organic-inorganic hybrid perovskite solar cells. Some distinctive optoelectronic features need more phenomenological models and accurate simulations. Herein, the application of the device model method in the simulation of organic and organic-inorganic perovskite solar cells is reviewed. To this end, the ways of the device model are elucidated by discussing the metal-insulator-metal picture and the equations describing the physics. Next, the simulations on J-V curves of organic solar cells are given in the presence of the space charge, interface, charge injection, traps, or exciton. In the perovskite section, the effects of trap states, direct band recombination, surface recombination, and ion migration on the device performance are systematically discussed from the perspective of the device model simulation. Suggestions for designing perovskite devices with better performance are also given.

Combinatorial Reactive Sputtering of In2S3 as an Alternative Contact Layer for Thin Film Solar Cells

High-throughput computational and experimental techniques have been used in the past to accelerate the discovery of new promising solar cell materials. An important part of the development of novel thin film solar cell technologies, that is still considered a bottleneck for both theory and experiment, is the search for alternative interfacial contact (buffer) layers. The research and development of contact materials is difficult due to the inherent complexity that arises from its interactions at the interface with the absorber. A promising alternative to the commonly used CdS buffer layer in thin film solar cells that contain absorbers with lower electron affinity can be found in β-In2S3. However, the synthesis conditions for the sputter deposition of this material are not well-established. Here, In2S3 is investigated as a solar cell contact material utilizing a high-throughput combinatorial screening of the temperature-flux parameter space, followed by a number of spatially resolved characterization techniques. It is demonstrated that, by tuning the sulfur partial pressure, phase pure β-In2S3 could be deposited using a broad range of substrate temperatures between 500 °C and ambient temperature. Combinatorial photovoltaic device libraries with Al/ZnO/In2S3/Cu2ZnSnS4/Mo/SiO2 structure were built at optimal processing conditions to investigate the feasibility of the sputtered In2S3 buffer layers and of an accelerated optimization of the device structure. The performance of the resulting In2S3/Cu2ZnSnS4 photovoltaic devices is on par with CdS/Cu2ZnSnS4 reference solar cells with similar values for short circuit currents and open circuit voltages, despite the overall quite low efficiency of the devices (∼2%). Overall, these results demonstrate how a high-throughput experimental approach can be used to accelerate the development of contact materials and facilitate the optimization of thin film solar cell devices.

A Facile Process for Partial Ag Substitution in Kesterite Cu2ZnSn(S,Se)4 Solar Cells Enabling a Device Efficiency of over 12

A cation substitution in Cu₂ZnSn(S,Se)₄ (CZTSSe) offers a viable strategy to reduce the open-circuit voltage (V_oc)-deficit by altering the characteristics of band-tail states, antisite defects, and related defect clusters. Herein, we report a facile single process, i.e., simply introducing a thin Ag layer on a metallic precursor, to effectively improve the device characteristics and performances in kesterite (Ag_x,Cu_1-x)₂ZnSn(S_y,Se_1-y)₄ (ACZTSSe) solar cells. Probing into the relationship between the external quantum efficiency derivative (dEQE/dλ) and device performances revealed the V_oc-deficit characteristics in the ACZTSSe solar cells as a function of Cu and Ag contents. The fabricated champion ACZTSSe solar cell device showed an efficiency of 12.07% and a record low V_oc-deficit of 561 mV. Thorough investigations into the mechanism underpinning the improved performance in the ACZTSSe device further revealed the improved band-tailing characteristic, effective minority carrier lifetime, and diode factors as well as reduced antisite defects and related defect clusters as compared to the CZTSSe device. This study demonstrates the feasibility of effectively suppressing antisite defects, related defect clusters, and band-tailing characteristics by simply introducing a thin Ag layer on a metallic precursor in the kesterite solar cells, which in turn effectively reduces the V_oc-deficit.

Current Approach in Surface Plasmons for Thin Film and Wire Array Solar Cell Applications

Surface plasmons, which exist along the interface of a metal and a dielectric, have been proposed as an efficient alternative method for light trapping in solar cells during the past ten years. With unique properties such as superior light scattering, optical trapping, guide mode coupling, near field concentration, and hot-electron generation, metallic nanoparticles or nanostructures can be tailored to a certain geometric design to enhance solar cell conversion efficiency and to reduce the material costs. In this article, we review current approaches on different kinds of solar cells, such as crystalline silicon (c-Si) and amorphous silicon (a-Si) thin film solar cells, organic solar cells, nanowire array solar cells, and single nanowire solar cells.

8% Efficiency Cu2ZnSn(S,Se)4 (CZTSSe) Thin Film Solar Cells on Flexible and Lightweight Molybdenum Foil Substrates

The use of flexible and highly conducting molybdenum (Mo) foil as a substrate offers several advantages such as a high thermal stability, smooth surface, and chemical inertness for the fabrication of high-efficiency thin film solar cells (TFSCs) by lowering the manufacturing costs. Here, we report a record preliminary efficiency of ∼8% for sputtered-grown Cu₂ZnSn(S,Se)₄ (CZTSSe) TFSCs on flexible and lightweight Mo foils. Careful studies were focused on identifying the role of preparative parameters such as annealing temperature, absorber composition, and post-preparative optimization to bridge the obtained record efficiency of ∼8% to a previous record efficiency of 7.04% for Na-incorporated CZTSSe sputter-based TFSCs. Interestingly, the preliminary record efficiency of ∼8% for our CZTSSe device grown via a scalable sputtering method was achieved by optimizing the absorber quality and post-preparative device optimization. While our preliminary results with a record efficiency demonstrate the potential of sputtering method, there is much scope for further improvement in the device efficiency by thoroughly understanding alkali element doping in the absorber layer.

Kesterite Cu2ZnSn(S,Se)4 Solar Cells with beyond 8% Efficiency by a Sol-Gel and Selenization Process

A facile sol-gel and selenization process has been demonstrated to fabricate high-quality single-phase earth abundant kesterite Cu2ZnSn(S,Se)4 (CZTSSe) photovoltaic absorbers. The structure and band gap of the fabricated CZTSSe can be readily tuned by varying the [S]/([S] + [Se]) ratios via selenization condition control. The effects of [S]/([S] + [Se]) ratio on device performance have been presented. The best device shows 8.25% total area efficiency without antireflection coating. Low fill factor is the main limitation for the current device efficiency compared to record efficiency device due to high series resistance and interface recombination. By improving film uniformity, eliminating voids, and reducing the Mo(S,Se)2 interfacial layer, a further boost of the device efficiency is expected, enabling the proposed process for fabricating one of the most promising candidates for kesterite solar cells.

Novel p-Type Conductive Semiconductor Nanocrystalline Film as the Back Electrode for High-Performance Thin Film Solar Cells

Thin film solar cells, due to the low cost, high efficiency, long-term stability, and consumer applications, have been widely applied for harvesting green energy. All of these thin film solar cells generally adopt various metal thin films as the back electrode, like Mo, Au, Ni, Ag, Al, graphite, and so forth. When they contact with p-type layer, it always produces a Schottky contact with a high contact potential barrier, which greatly affects the cell performance. In this work, we report for the first time to find an appropriate p-type conductive semiconductor film, digenite Cu9S5 nanocrystalline film, as the back electrode for CdTe solar cells as the model device. Its low sheet resistance (16.6 Ω/sq) could compare to that of the commercial TCO films (6-30 Ω/sq), like FTO, ITO, and AZO. Different from the traditonal metal back electrode, it produces a successive gradient-doping region by the controllable Cu diffusion, which greatly reduces the contact potential barrier. Remarkably, it achieved a comparable power conversion efficiency (PCE, 11.3%) with the traditional metal back electrode (Cu/Au thin films, 11.4%) in CdTe cells and a higher PCE (13.8%) with the help of the Au assistant film. We believe it could also act as the back electrode for other thin film solar cells (α-Si, CuInS2, CIGSe, CZTS, etc.), for their performance improvement.

Investigation into the Selenization Mechanisms of Wurtzite CZTS Nanorods

Here, we report the first detailed investigation into the selenization mechanism of thin films of wurtzite copper zinc tin sulfide (CZTS) nanorods (NRs), giving particular emphasis to the role of the long-chain organic ligands surrounding each NR. During selenization, the NRs undergo a selenium-mediated phase change from wurtzite to kesterite, concurrent with the replacement of sulfur with selenium in the lattice and in situ grain growth, along with the recrystallization of larger copper zinc tin selenide kesterite grains on top of the existing film. By utilizing a facile ligand removal technique, we demonstrate that the formation of a large-grain overlayer is achievable without the presence of ligands. In addition, we demonstrate an elegant ligand-exchange-based method for controlling the thickness of the fine-grain layer. This report emphasizes the key role played by ligands in determining the structural evolution of CZTS nanocrystal films during selenization, necessitating the identification of optimal ligand chemistries and processing conditions for desirable grain growth.

Enhanced Carrier Collection from CdS Passivated Grains in Solution-Processed Cu2ZnSn(S,Se)4 Solar Cells

Solution processing of Cu2ZnSn(S,Se)4 (CZTSSe)-kesterite solar cells is attractive because of easy manufacturing using readily available metal salts. The solution-processed CZTSSe absorbers, however, often suffer from poor morphology with a bilayer structure, exhibiting a dense top crust and a porous bottom layer, albeit yielding efficiencies of over 10%. To understand whether the cell performance is limited by this porous layer, a systematic compositional study using (scanning) transmission electron microscopy ((S)TEM) and energy-dispersive X-ray spectroscopy of the dimethyl sulfoxide processed CZTSSe absorbers is presented. TEM investigation revealed a thin layer of CdS that is formed around the small CZTSSe grains in the porous bottom layer during the chemical bath deposition step. This CdS passivation is found to be beneficial for the cell performance as it increases the carrier collection and facilitates the electron transport. Electron-beam-induced current measurements reveal an enhanced carrier collection for this buried region as compared to reference cells with evaporated CdS.

Local Cu Component Engineering to Achieve Continuous Carrier Transport for Enhanced Kesterite Solar Cells

Although the traditional Cu-poor architecture addresses many limitations for Cu₂ZnSn(S,Se)₄ solar cells, its further development still encounters a bottleneck in terms of efficiency, primarily arising from the inferior charge transport within the quasineutral region and enlarged recombination at back contact. On the contrary, the electrical benign kesterite compound with higher Cu content may compensate for these shortages, but it will degrade device performance more pronouncedly at front contact because of the Fermi level pinning and more electric shunts. Based on the electric disparities on their independent side, in this work, we propose a new status of Cu component by exploring a large grain/fine grain/large grain trilayer architecture with higher Cu content near back contact and lower Cu content near front contact. The benefits of this bottom Cu-higher strategy are that it imposes a concentration gradient to drive carrier diffusion toward front contact and decreases the valence band edge offset in the rear of the device to aid in hole extraction. Also, it maintains the Cu-poor architecture at the near surface to facilitate hole quasi-Fermi level splitting. In return, the local Cu component engineering-mediated electric advances contribute to the highest efficiency of 12.54% for kesterite solar cells using amine-thiol solution systems so far.

Thin-Film Solar Cells Based on Selenized CuSbS2 Absorber

Copper antimony sulfide (CuSbS₂) has attracted significant interest as an earth-abundant photovoltaic absorber. However, the efficiency of the current CuSbS₂ photovoltaic device is too low to meet the requirement of a large-scale application. In this study, selenylation was introduced to optimize the band structure and improve the device performance. Selenized CuSbS₂ [CuSbS₂(Se)] films were realized using porous CuSbS₂ films prepared by spray deposition with a post-treatment in Se vapor. The as-prepared CuSbS₂(Se) films exhibited a compact structure. X-ray diffraction and elemental analysis confirmed the effective doping of Se into the lattice by substituting a part of S in CuSbS₂. Elemental analysis revealed a gradient distribution for Se from the top surface to the deeper regions, and the substitution rate was very high (>39%). Dark J-V characteristics and AC impedance spectroscopy analysis showed that selenylation significantly reduced the carrier recombination center. As a result, the selenized CuSbS₂ device exhibited a significant efficiency improvement from 0.12% to 0.90%, which is much higher than that of the simply annealed device (0.46%), indicating this technique is a promising approach to improve the performance of CuSbS₂ solar cells.

Surface Passivation for Reliable Measurement of Bulk Electronic Properties of Heterojunction Devices

Quantum efficiency measurements of state of the art Cu(In,Ga)Se₂ (CIGS) thin film solar cells reveal current losses in the near infrared spectral region. These losses can be ascribed to inadequate optical absorption or poor collection of photogenerated charge carriers. Insight on the limiting mechanism is crucial for the development of more efficient devices. The electron beam induced current measurement technique applied on device cross-sections promises an experimental access to depth resolved information about the charge carrier collection probability. Here, this technique is used to show that charge carrier collection in CIGS deposited by multistage co-evaporation at low temperature is efficient over the optically active region and collection losses are minor as compared to the optical ones. Implications on the favorable absorber design are discussed. Furthermore, it is observed that the measurement is strongly affected by cross-section surface recombination and an accurate determination of the collection efficiency is not possible. Therefore it is proposed and shown that the use of an Al₂ O₃ layer deposited onto the cleaved cross-section significantly improves the accuracy of the measurement by reducing the surface recombination. A model for the passivation mechanism is presented and the passivation concept is extended to other solar cell technologies such as CdTe and Cu₂ (Zn,Sn)(S,Se)₄ .

ZnS Ultrathin Interfacial Layers for Optimizing Carrier Management in Sb2S3-based Photovoltaics

Antimony chalcogenides represent a family of materials of low toxicity and relative abundance, with a high potential for future sustainable solar energy conversion technology. However, solar cells based on antimony chalcogenides present open-circuit voltage losses that limit their efficiencies. These losses are attributed to several recombination mechanisms, with interfacial recombination being considered as one of the dominant processes. In this work, we exploit atomic layer deposition (ALD) to grow a series of ultrathin ZnS interfacial layers at the TiO2/Sb2S3 interface to mitigate interfacial recombination and to increase the carrier lifetime. ALD allows for very accurate control over the ZnS interlayer thickness on the ångström scale (0-1.5 nm) and to deposit highly pure Sb2S3. Our systematic study of the photovoltaic and optoelectronic properties of these devices by impedance spectroscopy and transient absorption concludes that the optimum ZnS interlayer thickness of 1.0 nm achieves the best balance between the beneficial effect of an increased recombination resistance at the interface and the deleterious barrier behavior of the wide-bandgap semiconductor ZnS. This optimization allows us to reach an overall power conversion efficiency of 5.09% in planar configuration.

Characterization of doped amorphous silicon thin films through the investigation of dopant elements by glow discharge spectrometry: a correlation of conductivity and bandgap energy measurements

The determination of optical parameters, such as absorption and extinction coefficients, refractive index and the bandgap energy, is crucial to understand the behavior and final efficiency of thin film solar cells based on hydrogenated amorphous silicon (a-Si:H). The influence of small variations of the gas flow rates used for the preparation of the p-a-SiC:H layer on the bandgap energy, as well as on the dopant elements concentration, thickness and conductivity of the p-layer, is investigated in this work using several complementary techniques. UV-NIR spectrophotometry and ellipsometry were used for the determination of bandgap energies of four p-a-SiC:H thin films, prepared by using different B(2)H(6) and SiH(4) fluxes (B(2)H(6) from 12 sccm to 20 sccm and SiH(4) from 6 sccm to 10 sccm). Moreover, radiofrequency glow discharge optical emission spectrometry technique was used for depth profiling characterization of p-a-SiC:H thin films and valuable information about dopant elements concentration and distribution throughout the coating was found. Finally, a direct relationship between the conductivity of p-a-SiC:H thin films and the dopant elements concentration, particularly boron and carbon, was observed for the four selected samples.

Synthesis of indium oxi-sulfide films by atomic layer deposition: The essential role of plasma enhancement

This paper describes the atomic layer deposition of In2(S,O)3 films by using In(acac)3 (acac = acetylacetonate), H2S and either H2O or O2 plasma as oxygen sources. First, the growth of pure In2S3 films was studied in order to better understand the influence of the oxygen pulses. X-Ray diffraction measurements, optical analysis and energy dispersive X-ray spectroscopy were performed to characterize the samples. When H2O was used as the oxygen source, the films have structural and optical properties, and the atomic composition of pure In2S3. No pure In2O3 films could be grown by using H2O or O2 plasma. However, In2(S,O)3 films could be successfully grown by using O2 plasma as oxygen source at a deposition temperature of T = 160 °C, because of an exchange reaction between S and O atoms. By adjusting the number of In2O3 growth cycles in relation to the number of In2S3 growth cycles, the optical band gap of the resulting thin films could be tuned.

Ceramic barrier layers for flexible thin film solar cells on metallic substrates: a laboratory scale study for process optimization and barrier layer properties

Flexible thin film solar cells are an alternative to both utility-scale and building integrated photovoltaic installations. The fabrication of these devices over electrically conducting low-cost foils requires the deposition of dielectric barrier layers to flatten the substrate surface, provide electrical isolation between the substrate and the device, and avoid the diffusion of metal impurities during the relatively high temperatures required to deposit the rest of the solar cell device layers. The typical roughness of low-cost stainless-steel foils is in the hundred-nanometer range, which is comparable or larger than the thin film layers comprising the device and this may result in electrical shunts that decrease solar cell performance. This manuscript assesses the properties of different single-layer and bilayer structures containing ceramics inks formulations based on Al2O3, AlN, or Si3N4 nanoparticles and deposited over stainless-steel foils using a rotogravure printing process. The best control of the substrate roughness was achieved for bilayers of Al2O3 or AlN with mixed particle size, which reduced the roughness and prevented the diffusion of metals impurities but AlN bilayers exhibited as well the best electrical insulation properties.

Surface/Interface Effects by Alkali Postdeposition Treatments of (Ag,Cu)(In,Ga)Se2 Thin Film Solar Cells

Ag alloying and the introduction of alkali elements through a postdeposition treatment are two approaches to improve the performance of Cu(In,Ga)Se2 (CIGS) thin film solar cells. In particular, a postdeposition treatment of an alkali metal fluoride of the absorber has shown a beneficial effect on the solar cells performance due to an increase in the open circuit voltage (V OC) for both (Ag,Cu)(In,Ga)Se2 (ACIGS) and CIGS based solar cells. Several reasons have been suggested for the improved V OC in CIGS solar cells including absorber surface and interface effects. Less works investigated how the applied postdeposition treatment influences the ACIGS absorber surface and interface properties and the subsequent buffer layer growth. In this work we employed hard X-ray photoelectron spectroscopy to study the chemical and electronic properties at the real functional interface between a CdS buffer and ACIGS absorbers that have been exposed to different alkali metal fluoride treatments during preparation. All samples show an enhanced Ag content at the CdS/ACIGS interface as compared to ACIGS bulk-like composition, and it is also shown that this enhanced Ag content anticorrelates with Ga content. The results indicate that the absorber composition at the near-surface region changes depending on the applied alkali postdeposition treatment. The Cu and Ga decrease and the Ag increase are stronger for the RbF treatment as compared to the CsF treatment, which correlates with the observed device characteristics. This suggests that a selective alkali postdeposition treatment could change the ACIGS absorber surface composition, which can influence the solar cell behavior.

Improved Photovoltaic Characteristics and Grain Boundary Potentials of CuIn0.7Ga0.3Se2 Thin Films Spin-Coated by Na-Dissolved Nontoxic Precursor Solution

This work introduces the incorporation of Na into the nontoxic precursor solution of CIGS to improve photovoltaic cell performance with the optimized benefits of Na. The extensive incorporation range of 0.05 to 0.5 mol % Na is used for the simple spin-coating process of high quality absorber thin films. A cell efficiency of ∼8.21%, which corresponds to an improvement of ∼10.2% compared to the reference sample, is achieved for the 0.25 mol % Na sample with enhanced open-circuit voltage and fill factor. The improvement was further analyzed as related to InCu defects and grain boundary potentials.