Predicting the timing properties of phosphor-coated scintillators using Monte Carlo light transport simulation

Current developments in positron emission tomography focus on improving timing performance for scanners with time-of-flight (TOF) capability, and incorporating depth-of-interaction (DOI) information. Recent studies have shown that incorporating DOI correction in TOF detectors can improve timing resolution, and that DOI also becomes more important in long axial field-of-view scanners. We have previously reported the development of DOI-encoding detectors using phosphor-coated scintillation crystals; here we study the timing properties of those crystals to assess the feasibility of providing some level of DOI information without significantly degrading the timing performance. We used Monte Carlo simulations to provide a detailed understanding of light transport in phosphor-coated crystals which cannot be fully characterized experimentally. Our simulations used a custom reflectance model based on 3D crystal surface measurements. Lutetium oxyorthosilicate crystals were simulated with a phosphor coating in contact with the scintillator surfaces and an external diffuse reflector (teflon). Light output, energy resolution, and pulse shape showed excellent agreement with experimental data obtained on 3 × 3 × 10 mm³ crystals coupled to a photomultiplier tube. Scintillator intrinsic timing resolution was simulated with head-on and side-on configurations, confirming the trends observed experimentally. These results indicate that the model may be used to predict timing properties in phosphor-coated crystals and guide the coating for optimal DOI resolution/timing performance trade-off for a given crystal geometry. Simulation data suggested that a time stamp generated from early photoelectrons minimizes degradation of the timing resolution, thus making this method potentially more useful for TOF-DOI detectors than our initial experiments suggested. Finally, this approach could easily be extended to the study of timing properties in other scintillation crystals, with a range of treatments and materials attached to the surface.

Timing in thick silicon detectors - an update

Thick silicon detectors are becoming widely used with reliable detectors available. They are often considered as a part of coincidence setup, where the timing resolution is of a crucial importance. Since over-biasing of thick detectors is sometimes unpractical, the timing resolution can be compromised in thick detectors. For this article the electric and Ramo fields in a 1.4 by 1.4 mm(2) pad size and 1 mm thick pad detector were calculated. GEANT4 was used to determine the tracks of the interaction electron produced in photon interactions, and the drift of ionized carriers in the detector was simulated. The signals were processed using a virtual preamplifier, a CR-RC shaper with a shaping time of 200 ns and a leading edge discriminator. The distributions of delay of the trigger after the event were compared to the measurements and a good agreement was found, allowing for additional noise in experimental setup. We proposed and evaluated an alternative readout strategy reading signals from 9 nearest pads which greatly reduces the effects of inhomogeneous Ramo field on the timing resolution.