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Wu H, Meng W, Zhu C, Tian Z, Ma F, Jiao Y. Two-dimensional monolayer BiSnO 3: A novel wide-band-gap semiconductor with high stability and strong ultraviolet absorption. J Phys Condens Matter 2024. [PMID: 38604165 DOI: 10.1088/1361-648x/ad3da5] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/13/2024]
Abstract
The exploration of two-dimensional wide-band-gap semiconductors (WBGSs) holds significant scientific and technological importance in the field of condensed matter physics and is actively being pursued in optoelectronic research. In this study, we present the discovery of a novel WBGS, namely monolayer BiSnO3, using first-principles calculations in conjunction with the quasi-particle G0W0 approximation. Our calculations confirm that monolayer BiSnO3exhibits moderate cleavage energy, positive phonon modes, mechanical resilience, and high temperature resistance (up to 1000 K), which demonstrate its structural stability, flexibility, and potential for experimental realization. Furthermore, band-structure calculations reveal that monolayer BiSnO3is a typical WBGS material with a band-gap energy (Eg) of 3.61 eV and possesses a unique quasi-direct electronic feature due to its quasi-flat valence band. The highest occupied valence flat-band originates from the electronic hybridization between Bi-6pand O-2pstates, which are in close proximity to the Fermi level. Remarkably, monolayer BiSnO3 exhibits a high absorption capacity for ultraviolet (UV) light spanning the UVA to UVC regions, displaying optical isotropy absorption and an unusual excitonic effect. These intriguing structural and electronic properties establish monolayer BiSnO3as a promising candidate for the development of new multi-function-integrated electronic and optoelectronic devices in the emerging field of two-dimensional WBGSs.
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Affiliation(s)
- Hongbo Wu
- Hebei Normal University, 20 South Second Ring Road East, Shijiazhuang City, Hebei Province, Shijiazhuang, 050024, CHINA
| | - Weizhen Meng
- Physics, Hebei Normal University, 20 South Second Ring Road East, Shijiazhuang City, Hebei Province, Shijiazhuang, 050024, CHINA
| | - Chunhui Zhu
- Physics, Hebei Normal University, 20 South Second Ring Road East, Shijiazhuang City, Hebei Province, Shijiazhuang, 050024, CHINA
| | - Zhixue Tian
- Physics, Hebei Normal University, 20 South Second Ring Road East, Shijiazhuang City, Hebei Province, Shijiazhuang, 050024, CHINA
| | - Fengxian Ma
- Physics, Hebei Normal University, 20 South Second Ring Road East, Shijiazhuang City, Hebei Province, Shijiazhuang, 050024, CHINA
| | - Yalong Jiao
- Physics, Hebei Normal University, 20 South Second Ring Road East, Shijiazhuang City, Hebei Province, Shijiazhuang, 050024, CHINA
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