Improvement in Performance and Stability of PbS QD/IGZO Phototransistors Through the Introduction of Ga2O3 Film for Broadband Sensor Applications

The development of broadband photosensors has become crucial in various fields. Indium-gallium-zinc oxide (IGZO, In:Ga:Zn = 1:1:1) phototransistors with PbS quantum dots (QDs) have shown promising features for such sensors, such as reasonable mobility, low leakage current, good photosensitivity, and low-cost fabrication. However, the instability of PbS QD/IGZO phototransistors under an air atmosphere and prolonged storage remain serious concerns. In this article, two concepts to improve the reliability of PbS QD/IGZO phototransistors were implemented. P-type doping in the PbS QD layer through oxidation allows increasing the built-in potential between IGZO and PbS QDs, leading to enhancement in photoinduced electron-hole pair creation. Second, agglomeration and fusion of a PbS QDs layer were controlled via thermal annealing, which facilitated the transport of photocreated carriers. The p-type doping and interconnection of a PbS QD layer can be achieved by deposition and subsequent thermal annealing of gallium oxide (Ga2O3) on PbS QD/IGZO stacks. The resulting Ga2O3/PbS QD/IGZO phototransistors exhibited high-performance switching characteristics under dark conditions. Notably, they showed a remarkable photoresponsivity of 196.69 ± 4.05 A/W and a detectivity of (5.47 ± 1.4) × 1012 Jones even at a long-wavelength illumination of 1550 nm. While the unpassivated PbS/IGZO phototransistor suffered serious degradation in optical performance after 2 weeks of storage, the Ga2O3/PbS QD/IGZO phototransistor demonstrated enhanced stability, maintaining high performance for over 5 weeks. These findings suggest that Ga2O3/PbS QD/IGZO phototransistors offer a feasible approach for the fabrication of large-scale active matrix broadband photosensor arrays, potentially revolutionizing optical sensing in various cutting-edge applications.

p-Type Schottky Contacts for Graphene Adjustable-Barrier Phototransistors

The graphene adjustable-barriers phototransistor is an attractive novel device for potential high speed and high responsivity dual-band photodetection. In this device, graphene is embedded between the semiconductors silicon and germanium. Both n-type and p-type Schottky contacts between graphene and the semiconductors are required for this device. While n-type Schottky contacts are widely investigated, reports about p-type Schottky contacts between graphene and the two involved semiconductors are scarce. In this study, we demonstrate a p-type Schottky contact between graphene and p-germanium. A clear rectification with on-off ratios of close to 103 (±5 V) and a distinct photoresponse at telecommunication wavelengths in the infrared are achieved. Further, p-type silicon is transferred to or deposited on graphene, and we also observe rectification and photoresponse in the visible range for some of these p-type Schottky junctions. These results are an important step toward the realization of functional graphene adjustable-barrier phototransistors.

Engineering Graphene Phototransistors for High Dynamic Range Applications

Phototransistors are light-sensitive devices featuring a high dynamic range, low-light detection, and mechanisms to adapt to different ambient light conditions. These features are of interest for bioinspired applications such as artificial and restored vision. In this work, we report on a graphene-based phototransistor exploiting the photogating effect that features picowatt- to microwatt-level photodetection, a dynamic range covering six orders of magnitude from 7 to 107 lux, and a responsivity of up to 4.7 × 103 A/W. The proposed device offers the highest dynamic range and lowest optical power detected compared to the state of the art in interfacial photogating and further operates air stably. These results have been achieved by a combination of multiple developments. For example, by optimizing the geometry of our devices with respect to the graphene channel aspect ratio and by introducing a semitransparent top-gate electrode, we report a factor 20-30 improvement in responsivity over unoptimized reference devices. Furthermore, we use a built-in dynamic range compression based on a partial logarithmic optical power dependence in combination with control of responsivity. These features enable adaptation to changing lighting conditions and support high dynamic range operation, similar to what is known in human visual perception. The enhanced performance of our devices therefore holds potential for bioinspired applications, such as retinal implants.

Vanadium Metal Doping of Monolayer MoS2 for p-Type Transistors and Fast-Speed Phototransistors

Modulating the electrical properties of two-dimensional (2D) materials is a fundamental prerequisite for their development to advanced electronic and optoelectronic devices. Substitutional doping has been demonstrated as an effective method for tuning the band structure in monolayer 2D materials. Here, we demonstrate a facile selective-area growth of vanadium-doped molybdenum disulfide (V-doped MoS2) flakes via pre-patterned vanadium-metal-assisted chemical vapor deposition (CVD). Optical microscopy characterization revealed the presence of flake arrays. Transmission electron microscopy, Raman spectroscopy, and X-ray photoelectron spectroscopy were employed to identify the chemical composition and crystalline structure of as-grown flakes. Electrical measurements indicated a light p-type conduction behavior in monolayer V-doped MoS2. Furthermore, the response time of phototransistors based on V-doped MoS2 monolayers exhibited a remarkable capability of 3 ms, representing approximately 3 orders of magnitude faster response than that observed in pure MoS2 phototransistors. This work hereby provides a feasible approach to doping of 2D materials, promising a scalable pathway for the integration of these materials into emerging electronic and optoelectronic devices.

Room-Temperature High-Performance Photodetector and Phototransistor Based on PdSe2/ZnIn2S4 Alloy Heterojunctions

Various semiconductor devices have been developed based on 2D heterojunction materials owing to their distinctive optoelectronic properties. However, to achieve efficient charge transfer at their interface remains a major challenge. Herein, an alloy heterojunction concept is proposed. The sulfur vacancies in ZnIn2S4 are filled with selenium atoms of PdSe2. This chemically bonded heterojunction can significantly enhance the separation of photocarriers, providing notable advantages in the field of photoelectric conversion. As a demonstration, a two-terminal photodetector based on the PdSe2/ZnIn2S4 heterojunction materials is fabricated. The photodetector exhibits stable operation in ambient conditions, showcasing superior performance in terms of large photocurrent, high responsivity (48.8 mA W-1) and detectivity (1.98 × 1011 Jones). To further validate the excellent optoelectronic performance of the heterojunction, a tri-terminal phototransistor is also fabricated. Benefiting from gate voltage modulation, the photocurrent is amplified to milliampere level, and the responsivity is increased to 229.14 mA W-1. These findings collectively demonstrate the significant potential of the chemically bonded PdSe2/ZnIn2S4 alloy heterojunction for future optoelectronic applications.

Imitating Synapse Behavior: Exploiting Off-Current in TPBi-Doped Small Molecule Phototransistors for Broadband Wavelength Recognition

Phototransistors have gained significant attention in diverse applications such as photodetectors, image sensors, and neuromorphic devices due to their ability to control electrical characteristics through photoresponse. The choice of photoactive materials in phototransistor research significantly impacts its development. In this study, we propose a novel device that emulates artificial synaptic behavior by leveraging the off-current of a phototransistor. We utilize a p-type organic semiconductor, dinaphtho[2,3-b:2',3'- f]thieno[3,2-b]thiophene (DNTT), as the channel material and dope it with the organic semiconductor 2,2',2″-(1,3,5-benzinetriyl)-tris(1-phenyl-1-H-benzimidazole) (TPBi) on the DNTT transistor. Under light illumination, the general DNTT transistor shows no change in off-current, except at 400 nm wavelength, whereas the TPBi-doped DNTT phototransistor exhibits increased off-current across all wavelength bands. Notably, DNTT phototransistors demonstrate broad photoresponse characteristics in the wavelength range of 400-1000 nm. We successfully simulate artificial synaptic behavior by differentiating the level of off-current and achieving a recognition rate of over 70% across all wavelength bands.

Organic Phototransistor with Light-Induced Contact Modulation and Sensitivity Enhancement Using a C60/C70:TAPC Hybrid Channel

Organic phototransistors (OPTs) are attracting a significant degree of interest as devices that have the potential to play multiple roles, including light sensing, signal amplification, and switching for addressing when they are used for matrix arrays. However, it has been challenging to realize OPTs that can perform all of these roles simultaneously at a sufficient performance level because the channel materials with high carrier mobility often exhibit relatively low photoabsorption. In this work, we propose OPTs with a hybrid bilayer channel consisting of a neat C60 layer and a bulk-heterojunction layer of C70 and 1,1-bis(4-bis(4-methyl-phenyl)-amino-phenyl)-cyclohexane (TAPC) as a possible solution to this issue. While the C60 layer serves as the main carrier-transporting layer with high mobility, the C70:TAPC layer operates as a photoactive layer wherein the photogenerated carriers provide photoinduced contact modulation that leads to a significant enhancement in photosensitivity. With the optimal design maximizing the absorption, the proposed hybrid-channel OPTs show a responsivity of ca. 180 A/W, which is 4.5 times higher than that of the control OPT with a C70:TAPC single channel. The operation mechanism and the origin for the improvement are verified by an in-depth analysis of the photoinduced modulation of the channel and contact resistances of the OPTs.

Silicon Nanowire Phototransistor Arrays for CMOS Image Sensor Applications

This paper introduces a new design of silicon nanowire (Si NW) phototransistor (PT) arrays conceived explicitly for improved CMOS image sensor performance, and comprehensive numerical investigations clarify the characteristics of the proposed devices. Each unit within this array architecture features a top-layer vertical Si NW optimized for the maximal absorption of incoming light across the visible spectrum. This absorbed light generates carriers, efficiently injected into the emitter-base junction of an underlying npn bipolar junction transistor (BJT). This process induces proficient amplification of the output collector current. By meticulously adjusting the diameters of the NWs, the PTs are tailored to exhibit distinct absorption characteristics, thus delineating the visible spectrum's blue, green, and red regions. This specialization ensures enriched color fidelity, a sought-after trait in imaging devices. Notably, the synergetic combination of the Si NW and the BJT augments the electrical response under illumination, boasting a quantum efficiency exceeding 10. In addition, by refining parameters like the height of the NW and gradient doping depth, the proposed PTs deliver enhanced color purity and amplified output currents.

High photoresponsivity MoS2phototransistor through enhanced hole trapping HfO2gate dielectric

Phototransistor using 2D semiconductor as the channel material has shown promising potential for high sensitivity photo detection. The high photoresponsivity is often attributed to the photogating effect, where photo excited holes are trapped at the gate dielectric interface that provides additional gate electric field to enhance channel charge carrier density. Gate dielectric material and its deposition processing conditions can have great effect on the interface states. Here, we use HfO2gate dielectric with proper thermal annealing to demonstrate a high photoresponsivity MoS2phototransistor. When HfO2is annealed in H2atmosphere, the photoresponsivity is enhanced by an order of magnitude as compared with that of a phototransistor using HfO2without annealing or annealed in Ar atmosphere. The enhancement is attributed to the hole trapping states introduced at HfO2interface through H2annealing process, which greatly enhances photogating effect. The phototransistor exhibits a very large photoresponsivity of 1.1 × 107A W-1and photogain of 3.3 × 107under low light illumination intensity. This study provides a processing technique to fabricate highly sensitive phototransistor for low optical power detection.

Gate Controlled Photocurrent Generation Mechanism in Air-Grown Organic Single Crystals for High-Speed Multiband Imaging

Organic semiconductors herald new opportunities for fabricating high-performance flexible and wearable optoelectronic devices owing to their intrinsic mechanical flexibility, excellent optical absorption, and cool-free operation. The photocurrent generation mechanisms are of multiple physical origins, including photoconductive, photovoltaic, and photogating effects, and the influence of individual effects on the device figures-of-merit is still not well understood. Here we fabricated a high-performance pentacene single-crystal transistor employing graphene electrodes and demonstrated the modulation from the photogating mechanism to the photoconduction effect by controlling gate bias. Control experiments indicate that the calculation based on transfer curves tends to overestimate the responsivity due to nearby trap states. Using a high frequency-modulated light signal to suppress the trapping process, we successfully measured its intrinsic -3 dB bandwidth of 75 kHz. Finally, high-resolution and UV-NIR high-speed imaging capability was demonstrated. Our work provides new guidelines for understanding the photophysical process and intrinsic performances of organic devices and also confirms the potential of organic single crystals in high-speed imaging applications.

Bidirectional Synaptic Phototransistor Based on Two-Dimensional Ferroelectric Semiconductor for Mixed Color Pattern Recognition

Optoelectronic synaptic devices capable of processing multiwavelength inputs are critical for neuromorphic vision hardware, which remains an important challenge. Here, we develop a bidirectional synaptic phototransistor based on a two-dimensional ferroelectric semiconductor of α-In₂Se₃, which exhibits bidirectional potentiated and depressed synaptic weight update under optical pulse stimulation. Importantly, the bidirectional optoelectronic synaptic behavior can be extended to multiwavelengths (blue, green, and red light), which could be used for color recognition. The mechanism underlying the bidirectional synaptic characteristics is attributed to the gate-configurable barrier heights as revealed by the Kelvin probe force microscopy measurement. The α-In₂Se₃ device exhibits versatile synaptic plasticity such as paired-pulse facilitation, short- and long-term potentiation, and long-term depression. The bidirectional optoelectronic synaptic weight updates under multiwavelength inputs enable a high accuracy of 97% for mixed color pattern recognition.

Large-Area GeSe Realized Using Pulsed Laser Deposition for Ultralow-Noise and Ultrafast Broadband Phototransistors

Here, we report on the comprehensive growth, characterization, and optoelectronic application of large-area, two-dimensional germanium selenide (GeSe) layers prepared using the pulsed laser deposition (PLD) technique. Back-gated phototransistors based on few-layered 2D GeSe have been fabricated on a SiO₂/Si substrate for ultrafast, low noise, and broadband light detection, showing spectral functionalities over a broad wavelength range of 0.4-1.5 μm. The broadband detection capabilities of the device have been attributed to the self-assembled GeO_x/GeSe heterostructure and sub-bandgap absorption in GeSe. Besides a high photoresponsivity of 25 AW^-1, the GeSe phototransistor displayed a high external quantum efficiency of the order of 6.14 × 10³%, a maximum specific detectivity of 4.16 × 10¹⁰ Jones, and an ultralow noise equivalent power of 0.09 pW/Hz^1/2. The detector has an ultrafast response/recovery time of 3.2/14.9 μs and can show photoresponse up to a high cut-off frequency of 150 kHz. These promising device parameters exhibited by PLD-grown GeSe layers-based detectors make it a favorable choice against present-day mainstream van der Waals semiconductors with limited scalability and optoelectronic compatibility in the visible-to-infrared spectral range.

Polymer-Gated Transistors with Only One Solution-Processed, Single Crystalline Organic Microwire for Light and Oxygen Detection

Organic semiconductors employed in single crystalline form have several advantages over polycrystalline films, such as higher charge carrier mobility and better environmental stability. Herein, we report the fabrication and characterization of a solution-processed microsized single-crystalline organic wire of n-type N,N'-dipentyl-3,4,9,10-perylene tetracarboxylic diimide (PTCDI-C₅). The crystal was applied as an active layer in polymer-gated organic field-effect transistors (OFETs) and organic complementary inverter circuits. The single crystaiiline nature of PTCDI-C₅ wires were characterized using two-dimensional grazing incidence wide-angle X-ray diffraction (2D-GIXD) and polarized optical microscopy. OFETs with the PTCDI-C₅ crystals exhibited high n-type performance and air stability under ambient conditions. To investigate the electrical properties of the single-crystalline PTCDI-C₅ wire more precisely, OFETs with only one PTCDI-C₅ microwire in the channel were fabricated, and clear n-type characteristics with satisfactory saturation behavior were observed. The device with only one crystal wire exhibited characteristics with significantly lower variation compared to the multicrystal devices, which shows that the density of crystal wires is a critical factor in precisely investigating device performance. The devices exhibited a reversible threshold voltage shift under vacuum and oxygen conditions, without changing the charge carrier mobility. Light-sensitive characteristics were also observed. Additionally, this solution-processed, highly crystalline organic semiconductor can be used in high-performance organic electronic circuits as well as in gas or light sensors.

Fast-Response Micro-Phototransistor Based on MoS2/Organic Molecule Heterojunction

Over the past years, molybdenum disulfide (MoS₂) has been the most extensively studied two-dimensional (2D) semiconductormaterial. With unique electrical and optical properties, 2DMoS₂ is considered to be a promising candidate for future nanoscale electronic and optoelectronic devices. However, charge trapping leads to a persistent photoconductance (PPC), hindering its use for optoelectronic applications. To overcome these drawbacks and improve the optoelectronic performance, organic semiconductors (OSCs) are selected to passivate surface defects, tune the optical characteristics, and modify the doping polarity of 2D MoS₂. Here, we demonstrate a fast photoresponse in multilayer (ML) MoS₂ by addressing a heterojunction interface with vanadylphthalocyanine (VOPc) molecules. The MoS₂/VOPc van der Waals interaction that has been established encourages the PPC effect in MoS₂ by rapidly segregating photo-generated holes, which move away from the traps of MoS₂ toward the VOPc molecules. The MoS₂/VOPc phototransistor exhibits a fast photo response of less than 15 ms for decay and rise, which is enhanced by 3ordersof magnitude in comparison to that of a pristine MoS₂-based phototransistor (seconds to tens of seconds). This work offers a means to realize high-performance transition metal dichalcogenide (TMD)-based photodetection with a fast response speed.

A Fast-Response Ultraviolet Phototransistor with a PVK QDs/ZnO Nanowire Heterostructure and Its Application in Pharmaceutical Solute Detection

The sensitivity and photoelectric noise of UV photodetectors are challenges that need to be overcome in pharmaceutical solute detection applications. This paper presents a new device concept for a CsPbBr3 QDs/ZnO nanowire heterojunction structure for phototransistors. The lattice match of the CsPbBr3 QDs and ZnO nanowire reduces the generation of trap centers and avoids carrier absorption by the composite center, which greatly improves the carrier mobility and high detectivity (8.13 × 10¹⁴ Jones). It is worth noting that by using high-efficiency PVK quantum dots as the intrinsic sensing core, the device has a high responsivity (6381 A/W) and responsivity frequency (300 Hz). Thus, a UV detection system for pharmaceutical solute detection is demonstrated, and the type of solute in the chemical solution is estimated by the waveform and the size of the output 2f signals.

High Performance Graphene-C60 -Bismuth Telluride-C60 -Graphene Nanometer Thin Film Phototransistor with Adjustable Positive and Negative Responses

Graphene is a promising candidate for the next-generation infrared array image sensors at room temperature due to its high mobility, tunable energy band, wide band absorption, and compatibility with complementary metal oxide semiconductor process. However, it is difficult to simultaneously obtain ultrafast response time and ultrahigh responsivity, which limits the further improvement of graphene photoconductive devices. Here, a novel graphene/C₆₀ /bismuth telluride/C₆₀ /graphene vertical heterojunction phototransistor is proposed. The response spectral range covers 400-1800 nm; the responsivity peak is 10⁶ A W^-1 ; and the peak detection rate and peak response speed reach 10¹⁴ Jones and 250 µs, respectively. In addition, the regulation of positive and negative photocurrents at a gate voltage is characterized and the ionization process in impurities of the designed phototransistor at a low temperature is analyzed. Tunable bidirectional response provides a new degree of freedom for phototransistors' signal resolution. The analysis of the dynamic change process of impurity energy level is conducted to improve the device's performance. From the perspective of manufacturing process, the ultrathin phototransistor (20-30 nm) is compatible with functional metasurface to realize wavelength or polarization selection, making it possible to achieve large-scale production of integrated spectrometer or polarization imaging sensor by nanoimprinting process.

2D SiP2/h-BN for a Gate-Controlled Phototransistor with Ultrahigh Sensitivity

Two-dimensional (2D) materials are extremely attractive for the construction of highly sensitive photodetectors due to their unique electronic and optical properties. However, developing 2D photodetectors with ultrahigh sensitivity for extremely low-light-level detection is still a challenge owing to the limitation of high dark current and low detectivity. Herein, a gate-controlled phototransistor based on 2D SiP₂/hexagonal boron nitride (h-BN) was rationally designed and demonstrated ultrahigh sensitivity for the first time. With a back-gate device geometry, the SiP₂/h-BN phototransistor exhibits an ultrahigh detectivity of 3.4 × 10¹³ Jones, which is one of the highest values among 2D material-based photodetectors. In addition, the phototransistor also shows a gate tunable responsivity of ≤43.5 A/W at a gate voltage of 30 V due to the photogating effect. The ultrahigh sensitivity of the SiP₂-based phototransistor is attributed to the extremely low dark current suppressed by the phototransistor configuration and the improved photocurrent by using h-BN as a substrate to reduce charge scattering. This work provides a facile strategy for improving the detectivity of photodetectors and validates the great potential of 2D SiP₂ phototransistors for ultrasensitive optoelectronic applications.

Analytical and Numerical Investigation of Nanowire Transistor X-ray Detector

Recently, nanowire detectors have been attracting increasing interest thanks to their advantages of high resolution and gain. The potential of using nanowire detectors is investigated in this work by developing a physically based model for Indium Phosphide (InP) phototransistor as well as by performing TCAD simulations. The model is based on solving the basic semiconductor equations for bipolar transistors and considering the effects of charge distribution on the bulk and on the surface. The developed model also takes into consideration the impact of surface traps, which are induced by photogenerated carriers situated at the surface of the nanowire. Further, photogating phenomena and photodoping are also included. Moreover, displacement damage (DD) is also investigated; an issue arises when the detector is exposed to repeated doses. The presented analytical model can predict the current produced from the incident X-ray beam at various energies. The calculation of the gain of the presented nanowire carefully considers the different governing effects at several values of energies as well as biasing voltage and doping. The proposed model is built in MATLAB, and the validity check of the model results is achieved using SILVACO TCAD device simulation. Comparisons between the proposed model results and SILVACO TCAD device simulation are provided and show good agreement.

Synthesis and Characterization of Transition Metal Dichalcogenide Nanoribbons Based on a Controllable O2 Etching

Although the synthesis of monolayer transition metal dichalcogenides has been established in the last decade, synthesizing nanoribbons remains challenging. In this study, we have developed a straightforward method to obtain nanoribbons with controllable widths (25-8000 nm) and lengths (1-50 μm) by O₂ etching of the metallic phase in metallic/semiconducting in-plane heterostructures of monolayer MoS₂. We also successfully applied this process for synthesizing WS₂, MoSe₂, and WSe₂ nanoribbons. Furthermore, field-effect transistors of the nanoribbons show an on/off ratio of larger than 1000, photoresponses of 1000%, and time responses of 5 s. The nanoribbons were compared with monolayer MoS₂, highlighting a substantial difference in the photoluminescence emission and photoresponses. Additionally, the nanoribbons were used as a template to build one-dimensional (1D)-1D or 1D-2D heterostructures with various transition metal dichalcogenides. The process developed in this study offers simple production of nanoribbons with applications in several fields of nanotechnology and chemistry.

Dual Light Temporal Coding Modes Enabled by Nanoparticle-Mediated Phototransistors via Gate Bias Modulation for Brain-Inspired Visual Perception

The core integration and cooperation of the retina, neurons, and synapses in the visual systems enable humans to effectively sense and process visual information with low power consumption. To mimic the human visual system, an artificial sensory nerve, along with optical sensing─a paired-pulse ratio (PPR) of the light pulse stimulated currents─and neural coding has been developed. For performing the artificial visual perception functions, we consistently reveal the positive and negative correlations between the PPR index and light pulse time interval by applying two consecutive light stimuli with gate voltages of -10 and 5 V, respectively, to a phototransistor. This phototransistor contains a heterostructured channel layer composed of zinc-oxide nanoparticles (ZnO NPs) interconnected with a solution-processed zinc-tin oxide (ZTO) film. The oxygen adsorption and desorption on the ZnO NP surface under light illumination are responsible for the positive-sloped PPR; the electron trapping effect at the ZnO NP/SiO2 interface is attributed to the negative-sloped PPR. The various accountable light power densities and number of surface trap states are considered to be directly realizing these spike-timing interval-dependent characteristics. The actual benefit of these characteristics is the dual temporal coding modes based on multiplicative operation using a ZTO/ZnO NP phototransistor realized via the active gate voltage modulation. The contrary tendency of the PPR index and temporal coding─a major biological neural coding─is well demonstrated by the potential of ZTO/ZnO NP phototransistors to be implemented in sensor networks for an artificial visual perception.

Boosting the Sensitivity of WSe2 Phototransistor via Janus Interfaces with 2D Perovskite and Ferroelectric Layers

Hybrid systems have recently attracted increasing attention, which combine the special attributes of each constitute and create interesting functionalities through multiple heterointerface interactions. Here, we design a two-dimensional (2D) hybrid phototransistor utilizing Janus-interface engineering, in which the WSe₂ channel combines light-sensitive perovskite and spontaneously polarized ferroelectrics, achieving collective ultrasensitive detection performance. The top perovskite (BA₂(MA)₃Pb₄I₁₃) layer can absorb the light efficiently and provide generous photoexcited holes to WSe₂. WSe₂ exhibit p-type semiconducting states of different degrees due to the selective light-operated doping effect, which also enables the ultrahigh photocurrent of the device. The bottom ferroelectric (Hf_0.5Zr_0.5O₂) layer dramatically decreases the dark current, which should be attributed to the ferroelectric polarization assisted charge trapping effect and improved gate control. As a whole, our phototransistors show excellent photoelectric performances across the ultraviolet to near-infrared range (360-1050 nm), including an ultrahigh ON/OFF current ratio > 10⁹ and low noise-equivalent power of 1.3 fW/Hz^1/2, all of which are highly competitive in 2D semiconductor-based optoelectronic devices. In particular, the devices show excellent weak light detection ability, where the distinguishable photoswitching signal is obtained even under a record-low light intensity down to 1.6 nW/cm², while showing a high responsivity of 2.3 × 10⁵ A/W and a specific detectivity of 4.1 × 10¹⁴ Jones. Our work demonstrates that Janus-interface design makes the upper and lower interfaces complement each other for the joint advancement into high-performance optoelectronic applications, providing a picture to realize the integrated engineering on carrier dynamics by light irradiation, electric field, interfacial trapping, and band alignment.

Bioinspired and Low-Power 2D Machine Vision with Adaptive Machine Learning and Forgetting

Natural intelligence has many dimensions, with some of its most important manifestations being tied to learning about the environment and making behavioral changes. In primates, vision plays a critical role in learning. The underlying biological neural networks contain specialized neurons and synapses which not only sense and process visual stimuli but also learn and adapt with remarkable energy efficiency. Forgetting also plays an active role in learning. Mimicking the adaptive neurobiological mechanisms for seeing, learning, and forgetting can, therefore, accelerate the development of artificial intelligence (AI) and bridge the massive energy gap that exists between AI and biological intelligence. Here, we demonstrate a bioinspired machine vision system based on a 2D phototransistor array fabricated from large-area monolayer molybdenum disulfide (MoS₂) and integrated with an analog, nonvolatile, and programmable memory gate-stack; this architecture not only enables dynamic learning and relearning from visual stimuli but also offers learning adaptability under noisy illumination conditions at miniscule energy expenditure. In short, our demonstrated "all-in-one" hardware vision platform combines "sensing", "computing", and "storage" to not only overcome the von Neumann bottleneck of conventional complementary metal-oxide-semiconductor (CMOS) technology but also to eliminate the need for peripheral circuits and sensors.

Wavelength and Polarization Sensitive Synaptic Phototransistor Based on Organic n-type Semiconductor/Supramolecular J-Aggregate Heterostructure

Human retina- and brain-inspired optoelectronic synapses, which integrate light detection and signal memory functions for data processing, have significant interest because of their potential applications for artificial vision technology. In nature, many animals such as mantis shrimp use polarized light information as well as scalar information including wavelength and intensity; however, a spectropolarimetric organic optoelectronic synapse has been seldom investigated. Herein, we report an organic synaptic phototransistor, consisting of a charge trapping liquid-crystalline perylene bisimide J-aggregate and a charge transporting crystalline dichlorinated naphthalene diimide, that can detect both wavelength and polarization information. The device shows persistent positive and negative photocurrents under low and high voltage conditions, respectively. Furthermore, the aligned organic heterostructure in the thin-film enables linearly polarized light to be absorbed with a dichroic ratio of 1.4 and 3.7 under transverse polarized blue and red light illumination, respectively. These features allow polarized light sensitive postsynaptic functions in the device. Consequently, a simple polarization imaging sensor array is successfully demonstrated using photonic synapses, which suggests that a supramolecular material is an important candidate for the development of spectropolarimetric neuromorphic vision systems.

Optically Programmable Circularly Polarized Photodetector

The detection of circularly polarized light (CPL) has aroused wide attention from both the scientific and industrial communities. However, from the optical activity of the chiral layer in the conventional CPL photodetectors, the sign inversion property is difficult to be achieved. As a result, great challenges arise during the preparation of miniaturized and integrated devices for tunable CPL detection applications. Along these lines, in this work, by taking advantage of the CPL-induced chirality characteristics of the achiral poly(9,9-di-n-hexylfluorene-alt-benzothiadiazole) (F6BT) and the good crystalline and electrical properties of the poly(3-hexylthiophene) (P3HT) film, an optically programmable CPL photodetector was fabricated. Interestingly, the device exhibited excellent discrimination between left- and right-handed CPL, while the maximum anisotropy factor of responsivity was 0.425. On top of that, the rigorously controlled chirality of the F6BT and the capability to be switched by the handedness of CPL was leveraged to realize the switchable detection of both L-CPL and R-CPL. Furthermore, a CPL photodetector array was fabricated, and the image processing and cryptographic characteristics were demonstrated. The proposed device configuration can find application in various scientific fields, including photonics, emission, conversion, or sensing with CPL but also is anticipated to play a key role for imaging and anticounterfeiting applications.

High-Performance Broad-Band Photodetection Based on Graphene-MoS2xSe2(1-x) Alloy Engineered Phototransistors

The concept of alloy engineering has emerged as a viable technique toward tuning the band gap as well as engineering the defect levels in two-dimensional transition-metal dichalcognides (TMDCs). The possibility of synthesizing these ultrathin TMDC materials through a chemical route has opened up realistic possibilities to fabricate hybrid multifunctional devices. By synthesizing nanosheets with different composites of MoS_2xSe_2(1-x) (x = 0 - 1) using simple chemical methods, we systematically investigate the photoresponse properties of three terminal hybrid devices by decorating large-area graphene with these nanosheets (x = 0, 0.5, 1) in 2D-2D configurations. Among them, the graphene-MoSSe hybrid phototransistor exhibits optoelectronic properties superior to those of its binary counterparts. The device exhibits extremely high photoresponsivity (>10⁴ A/W), low noise equivalent power (∼10^-14 W/Hz^0.5), and higher specific detectivity (∼10¹¹ jones) in the wide UV-NIR (365-810 nm) range with excellent gate tunability. The broad-band light absorption of MoSSe, ultrafast charge transport in graphene, and controllable defect engineering in MoSSe makes this device extremely attractive. Our work demonstrates the large-area scalability with the wafer-scale production of MoS_2xSe_2(1-x) alloys, having important implications toward the facile and scalable fabrication of high-performance optoelectronic devices and providing important insights into the fundamental interactions between van der Waals materials.