Structural Phase Transition and Material Properties of Few-Layer Monochalcogenides

GeSe and SnSe monochalcogenide monolayers and bilayers undergo a two-dimensional phase transition from a rectangular unit cell to a square unit cell at a critical temperature T_{c} well below the melting point. Its consequences on material properties are studied within the framework of Car-Parrinello molecular dynamics and density-functional theory. No in-gap states develop as the structural transition takes place, so that these phase-change materials remain semiconducting below and above T_{c}. As the in-plane lattice transforms from a rectangle into a square at T_{c}, the electronic, spin, optical, and piezoelectric properties dramatically depart from earlier predictions. Indeed, the Y and X points in the Brillouin zone become effectively equivalent at T_{c}, leading to a symmetric electronic structure. The spin polarization at the conduction valley edge vanishes, and the hole conductivity must display an anomalous thermal increase at T_{c}. The linear optical absorption band edge must change its polarization as well, making this structural and electronic evolution verifiable by optical means. Much excitement is drawn by theoretical predictions of giant piezoelectricity and ferroelectricity in these materials, and we estimate a pyroelectric response of about 3×10^{-12}  C/K m here. These results uncover the fundamental role of temperature as a control knob for the physical properties of few-layer group-IV monochalcogenides.

Simulating the Radio-Frequency Dielectric Response of Relaxor Ferroelectrics: Combination of Coarse-Grained Hamiltonians and Kinetic Monte Carlo Simulations

The radio-frequency dielectric response of the lead-free Ba(Zr_{0.5}Ti_{0.5})O_{3} relaxor ferroelectric is simulated using a coarse-grained Hamiltonian. This concept, taken from real-space renormalization group theories, allows us to depict the collective behavior of correlated local modes gathered in blocks. Free-energy barriers for their thermally activated collective hopping are deduced from this ab initio-based approach, and used as input data for kinetic Monte Carlo simulations. The resulting numerical scheme allows us to simulate the dielectric response for external field frequencies ranging from kHz up to a few tens of MHz for the first time and to demonstrate, e.g., that local (electric or elastic) random fields lead to the dielectric relaxation in the radio-frequency range that has been observed in relaxors.

Photostriction in Ferroelectrics from Density Functional Theory

An ab initio procedure allowing the computation of the deformation of ferroelectric-based materials under light is presented. This numerical scheme consists in structurally relaxing the system under the constraint of a fixed n_{e} concentration of electrons photoexcited into a specific conduction band edge state from a chosen valence band state, via the use of a constrained density functional theory method. The resulting change in lattice constant along a selected crystallographic direction is then calculated for a reasonable estimate of n_{e}. This method is applied to bulk multiferroic BiFeO_{3} and predicts a photostriction effect of the same order of magnitude than the ones recently observed. A strong dependence of photostrictive response on both the reached conduction state and the crystallographic direction (along which this effect is determined) is also revealed. Furthermore, analysis of the results demonstrates that the photostriction mechanism mostly originates from the screening of the spontaneous polarization by the photoexcited electrons in combination with the inverse piezoelectric effect.

Subterahertz dielectric relaxation in lead-free Ba(Zr,Ti)O3 relaxor ferroelectrics

Relaxors are complex materials with unusual properties that have been puzzling the scientific community since their discovery. The main characteristic of relaxors, that is, their dielectric relaxation, remains unclear and is still under debate. The difficulty to conduct measurements at frequencies ranging from ≃1 GHz to ≃1 THz and the challenge of developing models to capture their complex dynamical responses are among the reasons for such a situation. Here, we report first-principles-based molecular dynamic simulations of lead-free Ba(Zr0.5Ti0.5)O3, which allows us to obtain its subterahertz dynamics. This approach reproduces the striking characteristics of relaxors including the dielectric relaxation, the constant-loss behaviour, the diffuse maximum in the temperature dependence of susceptibility, the substantial widening of dielectric spectrum on cooling and the resulting Vogel-Fulcher law. The simulations further relate such features to the decomposed dielectric responses, each associated with its own polarization mechanism, therefore, enhancing the current understanding of relaxor behaviour.

Topological Point Defects in Relaxor Ferroelectrics

First-principles-based effective Hamiltonian simulations are used to reveal the hidden connection between topological defects (hedgehogs and antihedgehogs) and relaxor behavior. Such defects are discovered to predominantly lie at the border of polar nanoregions in both Ba(Zr_{0.5}Ti_{0.5})O_{3} (BZT) and Pb(Sc_{0.5}Nb_{0.5})O_{3} (PSN) systems, and the temperature dependency of their density allows us to distinguish between noncanonical (PSN) and canonical (BZT) relaxor behaviors (via the presence or absence of a crossing of a percolation threshold). This density also possesses an inflection point at precisely the temperature for which the dielectric response peaks. Moreover, hedgehogs and antihedgehogs are found to be mobile excitations, and the dynamical nature of their annihilation is demonstrated (using simple hydrodynamical arguments) to follows laws, such as those of Vogel-Fulcher and Arrhenius, that are characteristic of dipolar relaxation kinetics of relaxor ferroelectrics.

Frustration and Self-Ordering of Topological Defects in Ferroelectrics

A first-principles-based effective Hamiltonian technique is used to investigate the interplay between geometrical frustration and the ordering of topological defects in a ferroelectric nanocomposite consisting of a square array of BaTiO_{3} nanowires embedded in a Ba_{0.15}Sr_{0.85}TiO_{3} matrix. Different arrangements of the wires' chiralities geometrically frustrate the matrix, which in response exhibits point topological defects featuring self-assembled ordered structures spatially fluctuating down to the lowest temperatures. These fluctuations thereby endow the system with residual configurational entropy from which many properties characteristic of geometric frustration, such as the ground state degeneracy and the broadness of the dielectric response, are further found to originate.

Large elasto-optic effect and reversible electrochromism in multiferroic BiFeO3

The control of optical fields is usually achieved through the electro-optic or acousto-optic effect in single-crystal ferroelectric or polar compounds such as LiNbO₃ or quartz. In recent years, tremendous progress has been made in ferroelectric oxide thin film technology—a field which is now a strong driving force in areas such as electronics, spintronics and photovoltaics. Here, we apply epitaxial strain engineering to tune the optical response of BiFeO₃ thin films, and find a very large variation of the optical index with strain, corresponding to an effective elasto-optic coefficient larger than that of quartz. We observe a concomitant strain-driven variation in light absorption—reminiscent of piezochromism—which we show can be manipulated by an electric field. This constitutes an electrochromic effect that is reversible, remanent and not driven by defects. These findings broaden the potential of multiferroics towards photonics and thin film acousto-optic devices, and suggest exciting device opportunities arising from the coupling of ferroic, piezoelectric and optical responses.

Modern technology such as electronics and photovoltaics requires careful control of optical responses of electronic properties. Here, Sando et al. demonstrate a large variation of optical index and light absorption in multiferroic material BiFeO₃ thin films, tunable by in-film strain or electric field.

Driving Spin Excitations by Hydrostatic Pressure in BiFeO(3)

Optical spectroscopy has been combined with computational and theoretical techniques to show how the spin dynamics in the model multiferroic BiFeO(3) responds to the application of hydrostatic pressure and its corresponding series of structural phase transitions from R3c to the Pnma phases. As pressure increases, multiple spin excitations associated with noncollinear cycloidal magnetism collapse into two excitations, which show jump discontinuities at some of the ensuing crystal phase transitions. The effective Hamiltonian approach provides information on the electrical polarization and structural changes of the oxygen octahedra through the successive structural phases. The extracted parameters are then used in a Ginzburg-Landau model to reproduce the evolution with pressure of the spin wave excitations observed at low energy, and we demonstrate that the structural phases and the magnetic anisotropy drive and control the spin excitations.

Large Elasto-Optic Effect in Epitaxial PbTiO(3) Films

First-principles calculations are performed to investigate the elasto-optic properties of four different structural phases in (001) epitaxial PbTiO(3) films under tensile strain: a tetragonal (T) phase and an orthorhombic (O) phase, which are the ground states for small and large strain, respectively, and two low-symmetry, monoclinic phases of Cm and Pm symmetries that have low total energy in the intermediate strain range. It is found that the refractive indices of the T and O phases respond differently to epitaxial strain, evidenced by a change of sign of their effective elasto-optic coefficients, and as a result of presently discovered correlations between refractive index, axial ratio, and magnitude of the ferroelectric polarization. The difference in refractive indices between T and O and the existence of such correlations naturally lead to large elasto-optic coefficients in the Cm and Pm states in the intermediate strain range, because Cm structurally bridges the T and O phases (via polarization rotation and a rapid change of its axial ratio) and Pm adopts a similar axial ratio and polarization magnitude to Cm. The present results therefore broaden the palette of functionalities of ferroelectric materials, and suggest new routes to generate systems with unprecedentedly large elasto-optic conversion.

Predicted energetics and properties of rare-earth ferrites films grown on cubic (111)- and hexagonal (0001)-oriented substrates

First-principles calculations are performed to compare the energetics of several phases, including hexagonal polar P6(3)cm and perovskite non-polar Pbnm-like states, of epitaxial RFeO3 films (with R  =  Ce, Pr, Nd, Sm, Gd, Tb, Dy, Ho, Er and Lu) grown on different cubic (1 1 1)- and hexagonal (0 0 0 1)-oriented substrates. The P63cm phase is found to be the ground state for large enough in-plane lattice parameters in all investigated RFeO3 films, and its polarization is tunable by the amount of epitaxial strain. Series of available substrates allowing the growth of hexagonal polar RFeO3 films, as well as other phenomena of fundamental and technological importance (e.g. different ground states and coexistence between several phases) are also predicted.

First-principles-based effective Hamiltonian simulations of bulks and films made of lead-free Ba(Zr,Ti)O3 relaxor ferroelectrics

A review of the recent development and application of a first-principles-derived effective Hamiltonian technique to the study of lead-free Ba(Zr,Ti)O3 (BZT) relaxor ferroelectrics is provided. In addition to the computation and analysis of macroscopic properties (such as different types of dielectric responses and electric polarization) and their connections to previous published works, particular emphasis is given to microscopic insights arising from this atomistic technique. These include (i) the numerically-found determination of the physical origin of the relaxor behavior in BZT; and (ii) the prediction of polar nanoregions and the evolution of their morphology as a response to temperature, electric fields and epitaxial misfit strain. Other striking phenomena that were predicted in BZT compounds, such as Fano resonance and field-driven percolation, are also documented and discussed. Finally, a brief perspective of possible remaining computational studies to be conducted in relaxor ferroelectrics, in order to further understand them, is attempted.

Predicted pressure-induced spin and electronic transition in double perovskite R2CoMnO6 (R = rare-earth ion)

Specific first-principles calculations are performed to predict structural, magnetic and electronic properties of seven double perovskite R2CoMnO6 materials, with R being a rare-earth ion, under hydrostatic pressure. All these compounds are found to undergo a first-order transition from a high spin (HS) to low spin (LS) state at a critical pressure (whose value is dependent on the R ion). Such transition not only results in a significant volume collapse but also yields a dramatic change in electronic structure. More precisely, the HS-to-LS transition is accompanied by a transition from an insulator to a half-metallic state in the R2CoMnO6 compounds having the largest rare-earth ionic radius (i.e., Nd, Sm, Gd and Tb) while it induces a change from an insulator to a semiconductor having a narrow band gap for the smallest rare-earth ions (i.e., R = Dy, Ho and Er). Experiments are called for to confirm these predictions.

Electronic properties of electrical vortices in ferroelectric nanocomposites from large-scale ab initio computations

An original ab initio procedure is developed and applied to a ferroelectric nanocomposite, in order to reveal the effect of electrical vortices on electronic properties. Such procedure involves the combination of two large-scale numerical schemes, namely, the effective Hamiltonian (to incorporate ionic degrees of freedom) and the linear-scaling three-dimensional fragment method (to treat electronic degrees of freedom). The use of such procedure sheds some light into the origin of the recently observed current that is activated at rather low voltages in systems possessing electrical vortices. It also reveals a novel electronic phenomena that is a systematic control of the type of the band-alignment (i.e., type I versus type II) within the same material via the temperature-driven annihilation/formation of electrical topological defects.

Predicting a ferrimagnetic phase of Zn(2)FeOsO(6) with strong magnetoelectric coupling

Multiferroic materials, in which ferroelectric and magnetic ordering coexist, are of practical interest for the development of novel memory devices that allow for electrical writing and nondestructive magnetic readout operation. The great challenge is to create room temperature multiferroic materials with strongly coupled ferroelectric and ferromagnetic (or ferrimagnetic) orderings. BiFeO_{3} is the most heavily investigated single-phase multiferroic to date due to the coexistence of its magnetic order and ferroelectric order at room temperature. However, there is no net magnetic moment in the cycloidal (antiferromagneticlike) magnetic state of bulk BiFeO_{3}, which severely limits its realistic applications in electric field controlled memory devices. Here, we predict that LiNbO_{3}-type Zn_{2}FeOsO_{6} is a new multiferroic with properties superior to BiFeO_{3}. First, there are strong ferroelectricity and strong ferrimagnetism at room temperature in Zn_{2}FeOsO_{6}. Second, the easy plane of the spontaneous magnetization can be switched by an external electric field, evidencing the strong magnetoelectric coupling existing in this system. Our results suggest that ferrimagnetic 3d-5d LiNbO_{3}-type material may therefore be used to achieve voltage control of magnetism in future memory devices.

Revisiting galvanomagnetic effects in conducting ferromagnets

The recently proposed coupling between the angular momentum density and magnetic moments is shown to provide a straightforward alternative explanation for galvanomagnetic effects, i.e. for both anisotropic magnetoresistance (AMR) and planar Hall effect (PHE). Such coupling naturally reproduces the general formula associated with AMR and PHE and allows for the occurrence of so-called 'negative AMR'. This coupling also provides a unifying link between AMR, PHE and the anomalous Hall effect (AHE) since this same coupling was previously found to give rise to AHE (Bellaiche et al 2013 Phys. Rev. B 88 161102).

Prediction of novel interface-driven spintronic effects

The recently proposed coupling between the angular momentum density and magnetic moment (Raeliarijaona et al 2013 Phys. Rev. Lett. 110 137205) is shown here to result in the prediction of (i) novel spin currents generated by an electrical current and (ii) new electrical currents induced by a spin current in systems possessing specific interfaces between two different materials. Some of these spin (electrical) currents can be reversed near the interface by reversing the applied electrical (spin) current. Similarities and differences between these novel spintronic effects and the well-known spin Hall and inverse spin Hall effects are also discussed.

Strain engineering of perovskite thin films using a single substrate

Combining temperature-dependent x-ray diffraction, Raman spectroscopy and first-principles-based effective Hamiltonian calculations, we show that varying the thickness of (Ba0.8Sr0.2)TiO3 (BST) thin films deposited on the same single substrate (namely, MgO) enables us to change not only the magnitude but also the sign of the misfit strain. Such previously overlooked control of the strain allows several properties of these films (e.g. Curie temperature, symmetry of ferroelectric phases, dielectric response) to be tuned and even optimized. Surprisingly, such desired control of the strain (and of the resulting properties) originates from an effect that is commonly believed to be detrimental to functionalities of films, namely the existence of misfit dislocations. The present study therefore provides a novel route to strain engineering, as well as leading us to revisit common beliefs.

Ultrafast switching of the electric polarization and magnetic chirality in BiFeO3 by an electric field

Using a first-principles-based effective Hamiltonian within molecular dynamics simulations, we discover that applying an electric field that is opposite to the initial direction of the polarization results in a switching of both the polarization and the magnetic chirality vector of multiferroic BiFeO3 at an ultrafast pace (namely, of the order of picoseconds). We discuss the origin of such a double ultrafast switching, which is found to involve original intermediate magnetic states and may hold promise for designing various devices.

The stabilization of a single domain in free-standing ferroelectric nanocrystals

High resolution electron microscopy, electron diffraction and electron holography were used to study individual free-standing ∼ 30 nm barium titanate nanocrystals. Large unidirectional variations in the tetragonal distortion were mapped across the smaller nanocrystals, peaking to anomalously large values of up to 4% at the centers of the nanocrystals. This indicated that the nanocrystals consist of highly strained single ferroelectric domains. Simulations using an effective Hamiltonian for modeling a nanocrystal under a small depolarizing field and negative pressure qualitatively confirm this picture. These simulations, along with the development of a phenomenological model, show that the tetragonal distortion variation is a combined effect of: (i) electrostrictive coupling between the spontaneous polarization and strain inside the nanocrystal, and (ii) a surface-induced effective stress existing inside the nanodot. As a result, a 'strain skin layer', having a smaller tetragonal distortion relative to the core of the nanocrystal, is created.

Quantum anomalous Hall effect in graphene proximity coupled to an antiferromagnetic insulator

We propose realizing the quantum anomalous Hall effect by proximity coupling graphene to an antiferromagnetic insulator that provides both broken time-reversal symmetry and spin-orbit coupling. We illustrate our idea by performing ab initio calculations for graphene adsorbed on the (111) surface of BiFeO3. In this case, we find that the proximity-induced exchange field in graphene is about 70 meV, and that a topologically nontrivial band gap is opened by Rashba spin-orbit coupling. The size of the gap depends on the separation between the graphene and the thin film substrate, which can be tuned experimentally by applying external pressure.

Control of ferroelectricity and magnetism in multi-ferroic BiFeO3 by epitaxial strain

Recently, strain engineering has been shown to be a powerful and flexible means of tailoring the properties of ABO3 perovskite thin films. The effect of epitaxial strain on the structure of the perovskite unit cell can induce a host of interesting effects, these arising from either polar cation shifts or rotation of the oxygen octahedra, or both. In the multi-ferroic perovskite bismuth ferrite (BiFeO3-BFO), both degrees of freedom exist, and thus a complex behaviour may be expected as one plays with epitaxial strain. In this paper, we review our results on the role of strain on the ferroic transition temperatures and ferroic order parameters. We find that, while the Néel temperature is almost unchanged by strain, the ferroelectric Curie temperature strongly decreases as strain increases in both the tensile and compressive ranges. Also unexpected is the very weak influence of strain on the ferroelectric polarization value. Using effective Hamiltonian calculations, we show that these peculiar behaviours arise from the competition between antiferrodistortive and polar instabilities. Finally, we present results on the magnetic order: while the cycloidal spin modulation present in the bulk survives in weakly strained films, it is destroyed at large strain and replaced by pseudo-collinear antiferromagnetic ordering. We discuss the origin of this effect and give perspectives for devices based on strain-engineered BiFeO3.

Prediction of a novel magnetoelectric switching mechanism in multiferroics

We report a first-principles study of the recently predicted Pmc21 phase of the multiferroic BiFeO3 material, revealing a novel magnetoelectric effect that makes it possible to control magnetism with an electric field. The effect can be viewed as a two-step process: Switching the polarization first results in the change of the sense of the rotation of the oxygen octahedra, which in turn induces the switching of the secondary magnetic order parameter. The first step is governed by an original trilinear-coupling energy between polarization, octahedral tilting, and an antiferroelectric distortion. The second step is controlled by another trilinear coupling, this one involving the predominant and secondary magnetic orders as well as the oxygen octahedral tilting. In contrast with other trilinear-coupling effects in the literature, the present ones occur in a simple ABO3 perovskite and involve a large polarization.

Effects of a rotating electric field on the properties of epitaxial (001) Pb(Zr,Ti)O3 ultrathin film: a first-principles-based study

Pb(Zr,Ti)O3 ultrathin films under open-circuit electrical boundary conditions and subjected to an electric field rotating in the (1¯10) plane are investigated via the use of an effective Hamiltonian, for different magnitudes of this field. Varying the direction and magnitude of the electric field leads to specific reorganization of dipoles into original configuration states, whose microstructures and macroscopic properties are revealed. In particular, a novel (direction of the electric field-versus-magnitude of the electric field) phase diagram is reported here. The field-induced correlation between the polar distortions and the oxygen octahedral tilting is also discussed.

Properties of epitaxial films made of relaxor ferroelectrics

Finite-temperature properties of epitaxial films made of Ba(Zr,Ti)O3 relaxor ferroelectrics are determined as a function of misfit strain, via the use of a first-principles-based effective Hamiltonian. These films are macroscopically paraelectric at any temperature, for any strain ranging between ≃-3% and ≃+3%. However, original temperature-versus-misfit strain phase diagrams are obtained for the Burns temperature (Tb) and for the critical temperatures (Tm,z and Tm,IP) at which the out-of-plane and in-plane dielectric response peak, respectively, which allow the identification of three different regions. These latter differ from their evolution of Tb, Tm,z, and/or Tm,IP with strain, which are the fingerprints of a remarkable strain-induced microscopic change: each of these regions is associated with its own characteristic behavior of polar nanoregions at low temperature, such as strain-induced rotation or strain-driven elongation of their dipoles or even increase in the average size of the polar nanoregions when the strength of the strain grows.

Effect of chemical and hydrostatic pressures on structural and magnetic properties of rare-earth orthoferrites: a first-principles study

The dependence of structural and magnetic properties of rare-earth orthoferrites (in their Pbnm ground state) on the rare-earth ionic radius is systematically investigated from first principles. The effects of this 'chemical pressure' on lattice constants, Fe-O bond lengths, Fe-O-Fe bond angles and Fe-O bond length splittings are all well reproduced by these ab initio calculations. The simulations also offer novel predictions (on tiltings of FeO6 octahedra, cation antipolar displacements and weak magnetization) to be experimentally checked. In particular, the weak ferromagnetic moment of rare-earth orthoferrites is predicted to be a linear function of the rare-earth ionic radius. Finally, the effects of applying hydrostatic pressure on structural and magnetic behavior of SmFeO3 is also studied. It is found that, unlike previously assumed, hydrostatic pressure typically generates changes in physical properties that are quantitatively and even qualitatively different from those associated with the chemical pressure.