Mesoporous Gold: Substrate-Dependent Growth Dynamics, Strain Accumulation, and Electrocatalytic Activity for Biosensing

Understanding the growth of mesoporous crystalline materials, such as mesoporous metals, on different substrates can provide valuable insights into the crystal growth dynamics and the redox reactions that influence their electrochemical sensing performance. Herein, it is demonstrated how the amorphous nature of the glass substrate can suppress the typical <111> oriented growth in mesoporous Au (mAu) films. The suppressed <111> growth is manifested as an accumulation of strain, leading to the generation of abundant surface defects, which are beneficial for enhancing the electrochemical activity. The fine structuring attained enables dramatically accelerated diffusion and enhances the electrochemical sensing performance for disease-specific biomolecules. As a proof-of-concept, the as-fabricated glass-grown mAu film demonstrates high sensitivity in electrochemical detection of SARS-CoV-2-specific RNA with a limit of detection (LoD) as low as 1 attomolar (aM).

Ultralow Strain-Induced Emergent Polarization Structures in a Flexible Freestanding BaTiO3 Membrane

The engineering of ferroic orders, which involves the evolution of atomic structure and local ferroic configuration in the development of next-generation electronic devices. Until now, diverse polarization structures and topological domains are obtained in ferroelectric thin films or heterostructures, and the polarization switching and subsequent domain nucleation are found to be more conducive to building energy-efficient and multifunctional polarization structures. In this work, a continuous and periodic strain in a flexible freestanding BaTiO3 membrane to achieve a zigzag morphology is introduced. The polar head/tail boundaries and vortex/anti-vortex domains are constructed by a compressive strain as low as ≈0.5%, which is extremely lower than that used in epitaxial rigid ferroelectrics. Overall, this study c efficient polarization structures, which is of both theoretical value and practical significance for the development of next-generation flexible multifunctional devices.

Strain Engineering of Twisted Bilayer Graphene: The Rise of Strain-Twistronics

The layer-by-layer stacked van der Waals structures (termed vdW hetero/homostructures) offer a new paradigm for materials design-their physical properties can be tuned by the vertical stacking sequence as well as by adding a mechanical twist, stretch, and hydrostatic pressure to the atomic structure. In particular, simple twisting and stacking of two layers of graphene can form a uniform and ordered Moiré superlattice, which can effectively modulate the electrons of graphene layers and lead to the discovery of unconventional superconductivity and strong correlations. However, the twist angle of twisted bilayer graphene (tBLG) is almost unchangeable once the interlayer stacking is determined, while applying mechanical elastic strain provides an alternative way to deeply regulate the electronic structure by controlling the lattice spacing and symmetry. In this review, diverse experimental advances are introduced in straining tBLG by in-plane and out-of-plane modes, followed by the characterizations and calculations toward quantitatively tuning the strain-engineered electronic structures. It is further discussed that the structural relaxation in strained Moiré superlattice and its influence on electronic structures. Finally, the conclusion entails prospects for opportunities of strained twisted 2D materials, discussions on existing challenges, and an outlook on the intriguing emerging field, namely "strain-twistronics".

Large Polarization Near 50 μC/cm2 in a Single Unit Cell Layer SrTiO3

The generally nonpolar SrTiO3 has attracted more attention recently because of its possibly induced novel polar states and related paraelectric-ferroelectric phase transitions. By using controlled pulsed laser deposition, high-quality, ultrathin, and strained SrTiO3 layers were obtained. Here, transmission electron microscopy and theoretical simulations have unveiled highly polar states in SrTiO3 films even down to one unit cell at room temperature, which were stabilized in the PbTiO3/SrTiO3/PbTiO3 sandwich structures by in-plane tensile strain and interfacial coupling, as evidenced by large tetragonality (∼1.05), notable polar ion displacement (0.019 nm), and thus ultrahigh spontaneous polarization (up to ∼50 μC/cm2). These values are nearly comparable to those of the strong ferroelectrics as the PbZrxTi1-xO3 family. Our findings provide an effective and practical approach for integrating large strain states into oxide films and inducing polarization in nonpolar materials, which may broaden the functionality of nonpolar oxides and pave the way for the discovery of new electronic materials.

Codon-tRNA Coadaptation Bias for Identifying Strong Native Promoters in Komagataella phaffii

Promoters are crucial elements for engineering microbial production strains used in bioprocesses. For the increasingly popular chassis Komagataella phaffii (formerly Pichia pastoris), a limited number of well-characterized promoters constrain the data-driven engineering of production strains. Here, we present an in silico approach for condition-independent de novo identification of strong native promoters. The method relies on tRNA-codon coadaptation of coding sequences in the K. phaffii genome and is based on two complementary scores: the number of effective codons and the tRNA adaptation index. Genes with high codon bias are expected to be translated efficiently and, thus, also be under control of strong promoters. Using this approach, we identified promising strong promoter candidates and experimentally assessed their activity using fluorescent reporter assays characterizing 50 promoters spanning a 76-fold difference in expression levels in a glucose medium. Overall, we report several promoters that should be added to the molecular toolbox for engineering of K. phaffii and present an approach for identifying promoters in microbial genomes.

Self-Assembly of Organic Semiconductors on Strained Graphene under Strain-Induced Pseudo-Electric Fields

Graphene is used as a growth template for van der Waals epitaxy of organic semiconductor (OSC) thin films. During the synthesis and transfer of chemical-vapor-deposited graphene on a target substrate, local inhomogeneities in the graphene-in particular, a nonuniform strain field in the graphene template-can easily form, causing poor morphology and crystallinity of the OSC thin films. Moreover, a strain field in graphene introduces a pseudo-electric field in the graphene. Here, the study investigates how the strain and strain-induced pseudo-electric field of a graphene template affect the self-assembly of π-conjugated organic molecules on it. Periodically strained graphene templates are fabricated by transferring graphene onto an array of nanospheres and then analyzed the growth and nucleation behavior of C60 thin films on the strained graphene templates. Both experiments and a numerical simulation demonstrated that strained graphene reduced the desorption energy between the graphene and the C60 molecules and thereby suppressed both nucleation and growth of the C60 . A mechanism is proposed in which the strain-induced pseudo-electric field in graphene modulates the binding energy of organic molecules on the graphene.

Improved Alcohol Oxidation through Combined Effects of Tensile Lattice Strain and Twin Defects in Core-Shell Electrocatalysts

The direct alcohol fuel cells (DAFCs) rely on alcohol oxidation reactions (AORs) to produce electricity, which require catalysts with optimized electronic structure to accelerate the sluggish AORs. Herein, an epitaxial growth of Pd layer onto the pentatwinned Au@Ag core-shell nanorods (NRs) is reported to synthesize highly strained Au@AgPd core-shell NRs. The tensile strain in the AgPd shell of the Au@AgPd nanorods (NRs) arises not only from the core-shell lattice mismatch but also from twinning and lattice distortion occurring at the five twinned boundaries present in the structure. Theoretical simulations prove that the presence of tensile strains in the AgPd layer leads to a significant upward shift of the d-band center of the Pd site toward the Fermi level which remarkably changes the adsorption energy of alcohols on the surface. Highly strained Au@AgPd NRs show exceptional mass activities in electrochemical oxidation of biomass-derived alcohols (ethylene glycol, ethanol, and glycerol) reaching up to 18.66, 15.6, and 7.90 A mgpd -1 , respectively. These values are 23.3, 23.6, and 23.2 times higher than commercial Pd/C catalysts. This strain engineering strategy set the platform for the design and synthesis of highly efficient and versatile catalysts for the construction of high-performance DAFCs.

Unique insights into the design of low-strain single-crystalline Ni-rich cathodes with superior cycling stability

Micro-sized single-crystalline Ni-rich cathodes are emerging as prominent candidates owing to their larger compact density and higher safety compared with poly-crystalline counterparts, yet the uneven stress distribution and lattice oxygen loss result in the intragranular crack generation and planar gliding. Herein, taking LiNi0.83Co0.12Mn0.05O2 as an example, an optimal particle size of 3.7 µm is predicted by simulating the stress distributions at various states of charge and their relationship with fracture free-energy, and then, the fitted curves of particle size with calcination temperature and time are further built, which guides the successful synthesis of target-sized particles (m-NCM83) with highly ordered layered structure by a unique high-temperature short-duration pulse lithiation strategy. The m-NCM83 significantly reduces strain energy, Li/O loss, and cationic mixing, thereby inhibiting crack formation, planar gliding, and surface degradation. Accordingly, the m-NCM83 exhibits superior cycling stability with highly structural integrity and dual-doped m-NCM83 further shows excellent 88.1% capacity retention.

Strain Engineering in Perovskites: Mutual Insight on Oxides and Halides

Perovskite materials have garnered significant attention over the past decades due to their applications, not only in electronic materials, such as dielectrics, piezoelectrics, ferroelectrics, and superconductors but also in optoelectronic devices like solar cells and light emitting diodes. This interest arises from their versatile combinations and physiochemical tunability. While strain engineering is a recognized powerful tool for tailoring material properties, its collaborative impact on both oxides and halides remains understudied. Herein, strain engineering in perovskites for energy conversion devices, providing mutual insight into both oxides and halides is discussed. The various experimental methods are presented for applying strain by using thermal mismatch, lattice mismatch, defects, doping, light illumination, and flexible substrates. In addition, the main factors that are influenced by strain, categorized as structure (e.g., symmetry breaking, octahedral distortion), bandgap, chemical reactivity, and defect formation energy are described. After that, recent progress in strain engineering for perovskite oxides and halides for energy conversion devices is introduced. Promising methods for enhancing the performance of energy conversion devices using perovskites through strain engineering are suggested.

Sub-Diffraction Correlation of Quantum Emitters and Local Strain Fields in Strain-Engineered WSe2 Monolayers

Strain-engineering in atomically thin metal dichalcogenides is a useful method for realizing single-photon emitters (SPEs) for quantum technologies. Correlating SPE position with local strain topography is challenging due to localization inaccuracies from the diffraction limit. Currently, SPEs are assumed to be positioned at the highest strained location and are typically identified by randomly screening narrow-linewidth emitters, of which only a few are spectrally pure. In this work, hyperspectral quantum emitter localization microscopy is used to locate 33 SPEs in nanoparticle-strained WSe2 monolayers with sub-diffraction-limit resolution (≈30 nm) and correlate their positions with the underlying strain field via image registration. In this system, spectrally pure emitters are not concentrated at the highest strain location due to spectral contamination; instead, isolable SPEs are distributed away from points of peak strain with an average displacement of 240 nm. These observations point toward a need for a change in the design rules for strain-engineered SPEs and constitute a key step toward realizing next-generation quantum optical architectures.

Locally Strained 2D Materials: Preparation, Properties, and Applications

2D materials are promising for strain engineering due to their atomic thickness and exceptional mechanical properties. In particular, non-uniform and localized strain can be induced in 2D materials by generating out-of-plane deformations, resulting in novel phenomena and properties, as witnessed in recent years. Therefore, the locally strained 2D materials are of great value for both fundamental studies and practical applications. This review discusses techniques for introducing local strains to 2D materials, and their feasibility, advantages, and challenges. Then, the unique effects and properties that arise from local strain are explored. The representative applications based on locally strained 2D materials are illustrated, including memristor, single photon emitter, and photodetector. Finally, concluding remarks on the challenges and opportunities in the emerging field of locally strained 2D materials are provided.

Unraveling the strain tuning mechanism of interlayer excitons in WSe2/MoSe2heterostructure

Atomically thin transition metal dichalcogenides (TMDs) exhibit rich excitonic physics, due to reduced dielectric screening and strong Coulomb interactions. Especially, some attractive topics in modern condensed matter physics, such as correlated insulator, superconductivity, topological excitons bands, are recently reported in stacking two monolayer (ML) TMDs. Here, we clearly reveal the tuning mechanism of tensile strain on interlayer excitons (IEXs) and intralayer excitons (IAXs) in WSe2/MoSe2heterostructure (HS) at low temperature. We utilize the cryogenic tensile strain platform to stretch the HS, and measure by micro-photoluminescence (μ-PL). The PL peaks redshifts of IEXs and IAXs in WSe2/MoSe2HS under tensile strain are well observed. The first-principles calculations by using density functional theory reveals the PL peaks redshifts of IEXs and IAXs origin from bandgap shrinkage. The calculation results also show the Mo-4d states dominating conduction band minimum shifts of the ML MoSe2plays a dominant role in the redshifts of IEXs. This work provides new insights into understanding the tuning mechanism of tensile strain on IEXs and IAXs in two-dimensional (2D) HS, and paves a way to the development of flexible optoelectronic devices based on 2D materials.

Tunable electronic properties and optoelectronic characteristics of MoGe2N4/SiC van der Waals heterostructure

The assembly of van der Waals (vdW) heterostructure with easily regulated electronic properties provides a new way for the expansion of two-dimensional materials and promotes the development of optoelectronics, sensors, switching devices and other fields. In this work, a systematic investigation of the electronic properties of MoGe2N4/SiC heterostructures using density functional theory has been conducted, along with the modulation of electronic properties by vertical strain and the potential application prospects in optoelectronic devices. The results show that MoGe2N4/SiC heterostructure has excellent dynamic and thermal stability and belongs to type-II band alignment semiconductors. This is extremely beneficial for the separation of photo-generating electron-hole pairs, so it has important significance for the development of photovoltaic materials. In addition, under the control of vertical strain, the semiconductor-metal transition occurs in the MoGe2N4/SiC heterostructure when the compressive strain reaches 6%. In the case of compressive strain less than 6% and tensile strain, the MoGe2N4/SiC heterostructure maintains the type-II band alignment semiconductor characteristics. Meanwhile, we find that the MoGe2N4/SiC heterostructure has optical absorption coefficients of up to 105in the visible and ultraviolet light ranges, which can improve the absorption coefficients of the MoGe2N4and SiC monolayer in some visible light regions. Finally, the optical conductivity of the MoGe2N4/SiC heterostructure exhibits significant anisotropy, with the armchair direction displaying higher conductivity within the orange light range. In conclusion, the formation of vdW heterostructure by vertically stacking MoGe2N4and SiC monolayers can effectively improve their electronic and optical properties, which provides a valuable reference for the future development of electronic devices and photovoltaic materials.

Patternable Process-Induced Strain in 2D Monolayers and Heterobilayers

Strain engineering in two-dimensional (2D) materials is a powerful but difficult to control approach to tailor material properties. Across applications, there is a need for device-compatible techniques to design strain within 2D materials. This work explores how process-induced strain engineering, commonly used by the semiconductor industry to enhance transistor performance, can be used to pattern complex strain profiles in monolayer MoS2 and 2D heterostructures. A traction-separation model is identified to predict strain profiles and extract the interfacial traction coefficient of 1.3 ± 0.7 MPa/μm and the damage initiation threshold of 16 ± 5 nm. This work demonstrates the utility to (1) spatially pattern the optical band gap with a tuning rate of 91 ± 1 meV/% strain and (2) induce interlayer heterostrain in MoS2-WSe2 heterobilayers. These results provide a CMOS-compatible approach to design complex strain patterns in 2D materials with important applications in 2D heterogeneous integration into CMOS technologies, moiré engineering, and confining quantum systems.

Nonconventional Strain Engineering for Uniform Biaxial Tensile Strain in MoS2 Thin Film Transistors

Strain engineering has been employed as a crucial technique to enhance the electrical properties of semiconductors, especially in Si transistor technologies. Recent theoretical investigations have suggested that strain engineering can also markedly enhance the carrier mobility of two-dimensional (2D) transition-metal dichalcogenides (TMDs). The conventional methods used in strain engineering for Si and other bulk semiconductors are difficult to adapt to ultrathin 2D TMDs. Here, we report a strain engineering approach to apply the biaxial tensile strain to MoS2. Metal-organic chemical vapour deposition (MOCVD)-grown large-area MoS2 films were transferred onto SiO2/Si substrate, followed by the selective removal of the underneath Si. The release of compressive residual stress in the oxide layer induces strain in MoS2 on top of the SiO2 layer. The amount of strain can be precisely controlled by the thickness of oxide stressors. After the transistors were fabricated with strained MoS2 films, the array of strained transistors was transferred onto plastic substrates. This process ensured that the MoS2 channels maintained a consistent tensile strain value across a large area.

Strain Effects in Ru-Au Bimetallic Aerogels Boost Electrocatalytic Hydrogen Evolution

To improve the sluggish kinetics of the hydrogen evolution reaction (HER), a key component in water-splitting applications, there is an urgent desire to develop efficient, cost-effective, and stable electrocatalysts. Strain engineering is proving an efficient strategy for increasing the catalytic activity of electrocatalysts. This work presents the development of Ru-Au bimetallic aerogels by a simple one-step in situ reduction-gelation approach, which exhibits strain effects and electron transfer to create a remarkable HER activity and stability in an alkaline environment. The surface strain induced by the bimetallic segregated structure shifts the d-band center downward, enhancing catalysis by balancing the processes of water dissociation, OH* adsorption, and H* adsorption. Specifically, the optimized catalyst shows low overpotentials of only 24.1 mV at a current density of 10 mA cm-2 in alkaline electrolytes, surpassing commercial Pt/C. This study can contribute to the understanding of strain engineering in bimetallic electrocatalysts for HER at the atomic scale.

An atypical two-component system, AtcR/AtcK, simultaneously regulates the biosynthesis of multiple secondary metabolites in Streptomyces bingchenggensis

Streptomyces bingchenggensis is an industrial producer of milbemycins, which are important anthelmintic and insecticidal agents. Two-component systems (TCSs), which are typically situated in the same operon and are composed of a histidine kinase and a response regulator, are the predominant signal transduction pathways involved in the regulation of secondary metabolism in Streptomyces. Here, an atypical TCS, AtcR/AtcK, in which the encoding genes (sbi_06838/sbi_06839) are organized in a head-to-head pair, was demonstrated to be indispensable for the biosynthesis of multiple secondary metabolites in S. bingchenggensis. With the null TCS mutants, the production of milbemycin and yellow compound was abolished but nanchangmycin was overproduced. Transcriptional analysis and electrophoretic mobility shift assays showed that AtcR regulated the biosynthesis of these three secondary metabolites by a MilR3-mediated cascade. First, AtcR was activated by phosphorylation from signal-triggered AtcK. Second, the activated AtcR promoted the transcription of milR3. Third, MilR3 specifically activated the transcription of downstream genes from milbemycin and yellow compound biosynthetic gene clusters (BGCs) and nanR4 from the nanchangmycin BGC. Finally, because NanR4 is a specific repressor in the nanchangmycin BGC, activation of MilR3 downstream genes led to the production of yellow compound and milbemycin but inhibited nanchangmycin production. By rewiring the regulatory cascade, two strains were obtained, the yield of nanchangmycin was improved by 45-fold to 6.08 g/L and the production of milbemycin was increased twofold to 1.34 g/L. This work has broadened our knowledge on atypical TCSs and provided practical strategies to engineer strains for the production of secondary metabolites in Streptomyces.IMPORTANCEStreptomyces bingchenggensis is an important industrial strain that produces milbemycins. Two-component systems (TCSs), which consist of a histidine kinase and a response regulator, are the predominant signal transduction pathways involved in the regulation of secondary metabolism in Streptomyces. Coupled encoding genes of TCSs are typically situated in the same operon. Here, TCSs with encoding genes situated in separate head-to-head neighbor operons were labeled atypical TCSs. It was found that the atypical TCS AtcR/AtcK played an indispensable role in the biosynthesis of milbemycin, yellow compound, and nanchangmycin in S. bingchenggensis. This atypical TCS regulated the biosynthesis of specialized metabolites in a cascade mediated via a cluster-situated regulator, MilR3. Through rewiring the regulatory pathways, strains were successfully engineered to overproduce milbemycin and nanchangmycin. To the best of our knowledge, this is the first report on atypical TCS, in which the encoding genes of RR and HK were situated in separate head-to-head neighbor operons, involved in secondary metabolism. In addition, data mining showed that atypical TCSs were widely distributed in actinobacteria.

Boosting the Output Performance of the MoS2 Monolayer-Based Piezoelectric Nanogenerator by Artificial Dual Strain Concentration

Piezoelectric nanogenerators (PENGs) with molybdenum disulfide (MoS2) monolayers have been intensively studied owing to their superior mechanical durability and stability. However, the limited output performance resulting from a small active area and low strain levels continues to pose a significant challenge that should be overcome. Herein, we report a novel strategy for the epoch-making output performance of a PENG with a MoS2 monolayer by adopting the additive strain concentration concept. The simulation study indicates that strain in the MoS2 monolayer can be initially augmented by the wavy structure resulting from the prestretched poly(dimethylsiloxane) (PDMS) and is further increased through flexural deformation (i.e., bending). Based on these studies, we have developed concentrated strain-applied PENGs with MoS2 monolayers. The wavy structures effectively applied strain to the MoS2 monolayer and generated a piezoelectric output voltage and current of around 580 mV and 47.5 nA, respectively. Our innovative approach to enhancing the performance of PENGs with MoS2 monolayers through the artificial dual strain concept has led to groundbreaking results, achieving the highest recorded output voltage and current for PENGs based on two-dimensional (2D) materials, which provides unique opportunities for the 2D-based energy harvesting field and structural insight into how to improve the net strain on 2D materials.

Perovskite Oxides Alleviate Microstrain and Anion Loss of Radially-Aligned Ni-Rich Ncm811 Cathodes under High-Voltage Operations

The energy density of Ni-rich cathodes is expected to be further unlocked by increasing the cut-off voltage to above 4.3 V, which nevertheless come with significantly increased irreversible phase transition and abundant side reactions. In this study, the perovskite oxides enhanced radial-aligned LiNi0.8 Co0.1 Mn0.1 O2 (NCM811) cathodes are reported, in which the coherent-growth La2 [LiTM]O4 clusters are evenly riveted into the crystals and the stable Lax Ca1- x [TM]O3- x protective layer is concurrently formed on the surface. The reciprocal interactions greatly reduce the lattice strain during de-/lithiation. Meantime, the abundant oxygen vacancies of the coating layer are proved to reversibly capture (state of charge) and re-release (state of discharge) the oxygen radicals, fully avoiding their correlative side reactions. The resultant NCM811 displays negligible O2 and CO2 emissions when charging to 4.5 V as well as a thinner CEI film, therefore delivering a large capacity of 225 mAh g-1 at 0.1C in coin-type half-cells and a high retention of 88.3% after 1000 cycles at 1C in pouch-type full-cells within 2.7-4.5 V. The development of high-voltage Ni-rich cathodes exhibits a highly effective pathway to further increase their energy density.

Directionally-Resolved Phononic Properties of Monolayer 2D Molybdenum Ditelluride (MoTe2) under Uniaxial Elastic Strain

Understanding the phonon characteristics of two-dimensional (2D) molybdenum ditelluride (MoTe2) under strain is critical to manipulating its multiphysical properties. Although there have been numerous computational efforts to elucidate the strain-coupled phonon properties of monolayer MoTe2, empirical validation is still lacking. In this work, monolayer 1H-MoTe2 under uniaxial strain is studied via in situ micro-Raman spectroscopy. Directionally dependent monotonic softening of the doubly degenerate in-plane E2g1 phonon mode is observed with increasing uniaxial strain, where the E2g1 peak red-shifts -1.66 ± 0.04 cm-1/% along the armchair direction and -0.80 ± 0.07 cm-1/% along the zigzag direction. The corresponding Grüneisen parameters are calculated to be 1.09 and 0.52 along the armchair and zigzag directions, respectively. This work provides the first empirical quantification and validation of the orientation-dependent strain-coupled phonon response in monolayer 1H-MoTe2 and serves as a benchmark for other prototypical 2D transition-metal tellurides.

Non-Noble Metal Incorporated Transition Metal Dichalcogenide Monolayers for Electrochemical CO2 Reduction: A First-Principles Study

Using non-noble metal atoms as catalysts is attractive for decreasing the cost of the CO2 reduction reaction (CO2RR). By screening first-row transition metals and noble metals through extensive first-principles calculations, non-noble Sc and Ti single atoms binding on vacancy-defected transition metal dichalcogenide (TMD) monolayers exhibit better catalytic performance and selectivity for electrochemical CO2RR than noble metal single atoms. The overpotentials of Sc and Ti atoms for the CO2RR can be reduced lower than 0.09 V after applying suitable biaxial tensile strains on vacancy-defected TMDs, which are approximately 1 order of magnitude lower than that of most reported metal atom catalysts. The vacancy defects of TMDs and charge transfer to metal atoms induced by tensile strain play a key role in improving the catalytic activity of non-noble metal single atoms. These results highlight a possible way to design new single atom catalysts for electrochemical CO2RR by utilizing the combination of non-noble metal atoms, defected TMDs, and strain engineering.

Probing the Strain Direction-Dependent Nonmonotonic Optical Bandgap Modulation of Layered Violet Phosphorus

Recent theoretical investigations have well-predicted strain-induced nonmonotonic optical band gap variations in low-dimensional materials. However, few two-dimensional (2D) materials are experimentally confirmed to exhibit nonmonotonic optical band gap variation under varying strain. Here, a strain-induced nonmonotonic optical bandgap variation in violet phosphorus (VP) nanosheets is observed, as evidenced by photoluminescence spectroscopy, which is reported in a few other 2D materials in knowledge. The optical bandgap variations are characterized to show the modulation rates of 41 and -24 meV/% with compression and tensile strains, respectively. Remarkably, first-principle calculations predict and clarify the nonmonotonic modulation accurately, highlighting its relationship with the strain direction-dependent asymmetric distribution of conduction band minimum wavefunctions, demonstrating that this unique nonmonotonic optical bandgap modulation is determined by the distinctive crystal structure of VP. This work provides a deep insight into the design of 2D materials toward optoelectronic and photoelectrochemical applications via strain engineering.

Enhanced HER Efficiency of Monolayer MoS2 via S Vacancies and Nano-Cones Array Induced Strain Engineering

Molybdenum disulfide (MoS2 ) has gained significant attention as a promising catalyst for hydrogen evolution reaction (HER). The catalytic performance of MoS2 can be enhanced by either altering its structure or regulating external conditions. In this study, a novel approach combining the introduction of sulfur vacancy (VS ) and biaxial tensile strain to create more active sites and modulate the band structure of monolayer MoS2 is proposed. To achieve the desired strain level, nano-cones (NCs) array substrates facilely fabricated by dip-pen nanolithography (DPN) are employed. The magnitude of the applied tensile strain can be finely tuned via adjusting the height of the NCs. Furthermore, on-chip electrochemical devices are constructed based on artificial structures, enabling precise optimization of HER performance of MoS2 through the synergistic effect of VS and strain. Combined with the d-band theory, it reveals that the HER properties of VS -MoS2 are highly dependent on the degree of tensile strain. This study presents a promising avenue for the design and preparation of high-performance 2D catalysts for energy conversion and storage applications.

Imaging Strain-Localized Single-Photon Emitters in Layered GaSe below the Diffraction Limit

Nanoscale strain control of exciton funneling is an increasingly critical tool for the scalable production of single photon emitters (SPEs) in two-dimensional materials. However, conventional far-field optical microscopies remain constrained in spatial resolution by the diffraction limit and thus can provide only a limited description of nanoscale strain localization of SPEs. Here, we quantify the effects of nanoscale heterogeneous strain on the energy and brightness of GaSe SPEs on nanopillars with correlative cathodoluminescence, photoluminescence, and atomic force microscopy, supported by density functional theory simulations. We report the strain-localized SPEs have a broad range of emission wavelengths from 620 to 900 nm. We reveal substantial strain-controlled SPE wavelength tunability over a ∼100 nm spectral range and 2 orders of magnitude enhancement in the SPE brightness at the pillar center due to Type-I exciton funneling. In addition, we show that radiative biexciton cascade processes contribute to observed CL photon superbunching. Also, the GaSe SPEs show excellent stability, where their properties remain unchanged after electron beam exposure. We anticipate that this comprehensive study on the nanoscale strain control of two-dimensional SPEs will provide key insights to guide the development of truly deterministic quantum photonics.

Biotransformation Of l-Tryptophan To Produce Arcyriaflavin A With Pseudomonas putida KT2440

Natural products such as indolocarbazoles are a valuable source of highly bioactive compounds with numerous potential applications in the pharmaceutical industry. Arcyriaflavin A, isolated from marine invertebrates and slime molds, is one representative of this group and acts as a cyclin D1-cyclin-dependent kinase 4 inhibitor. To date, access to this compound has mostly relied on multi-step total synthesis. In this study, biosynthetic access to arcyriaflavin A was explored using recombinant Pseudomonas putida KT2440 based on a previously generated producer strain. We used a Design of Experiment approach to analyze four key parameters, which led to the optimization of the bioprocess. By engineering the formation of outer membrane vesicles and using an adsorbent in the culture broth, we succeeded to increase the yield of arcyriaflavin A in the cell-free supernatant, resulting in a nearly eight-fold increase in the overall production titers. Finally, we managed to scale up the bioprocess leading to a final yield of 4.7 mg arcyriaflavin A product isolated from 1 L of bacterial culture. Thus, this study showcases an integrative approach to improve biotransformation and moreover also provides starting points for further optimization of indolocarbazole production in P. putida.

Manipulation of Spin-Orbit Torque in Tungsten Oxide/Manganite Heterostructure by Ionic Liquid Gating and Orbit Engineering

Spin-orbit coupling (SOC) is the interaction between electron's spin and orbital motion, which could realize a charge-to-spin current conversion and enable an innovative method to switch the magnetization by spin-orbit torque (SOT). Varied techniques have been developed to manipulate and improve the SOT, but the role of the orbit degree of freedom, which should have a crucial bearing on the SOC and SOT, is still confusing. Here, we find that the charge-to-spin current conversion and SOT in W3O8-δ/(La, Sr)MnO3 could be produced or eliminated by ionic liquid gating. Through tuning the preferential occupancy of Mn/W-d electrons from the in-plane (dx2-y2) to out-of-plane (d3z2-r2) orbit, the SOT damping-like field efficiency is nearly doubled due to the enhanced spin Hall effect and interfacial Rashba-Edelstein effect. These findings not only offer intriguing opportunities to control the SOT for high-efficient spintronic devices but also could be a fundamental step toward spin-orbitronics in the future.

Ferroelectric Domain and Switching Dynamics in Curved In2Se3: First-Principles and Deep Learning Molecular Dynamics Simulations

Despite its prevalence in experiments, the influence of complex strain on material properties remains understudied due to the lack of effective simulation methods. Here, the effects of bending, rippling, and bubbling on the ferroelectric domains are investigated in an In2Se3 monolayer by density functional theory and deep learning molecular dynamics simulations. Since the ferroelectric switching barrier can be increased (decreased) by tensile (compressive) strain, automatic polarization reversal occurs in α-In2Se3 with a strain gradient when it is subjected to bending, rippling, or bubbling deformations to create localized ferroelectric domains with varying sizes. The switching dynamics depends on the magnitude of curvature and temperature, following an Arrhenius-style relationship. This study not only provides a promising solution for cross-scale studies using deep learning but also reveals the potential to manipulate local polarization in ferroelectric materials through strain engineering.

Improving Strain-localized GaSe Single Photon Emitters with Electrical Doping

Exciton localization through nanoscale strain has been used to create highly efficient single-photon emitters (SPEs) in 2D materials. However, the strong Coulomb interactions between excitons can lead to nonradiative recombination through exciton-exciton annihilation, negatively impacting SPE performance. Here, we investigate the effect of Coulomb interactions on the brightness, single photon purity, and operating temperatures of strain-localized GaSe SPEs by using electrostatic doping. By gating GaSe to the charge neutrality point, the exciton-exciton annihilation nonradiative pathway is suppressed, leading to ∼60% improvement of emission intensity and an enhancement of the single photon purity g(2)(0) from 0.55 to 0.28. The operating temperature also increased from 4.5 K to 85 K consequently. This research provides insight into many-body interactions in excitons confined by nanoscale strain and lays the groundwork for the optimization of SPEs for optoelectronics and quantum photonics.

Axially Encoded Mechano-Metafiber Electronics by Local Strain Engineering

Multimaterial integration, such as soft elastic and stiff components, exhibits rich deformation and functional behaviors to meet complex needs. Integrating multimaterials in the level of individual fiber is poised to maximize the functional design capacity of smart wearable electronic textiles, but remains unfulfilled. Here, this work continuously integrates stiff and soft elastic components into single fiber to fabricate encoded mechano-metafiber by programmable microfluidic sequence spinning (MSS). The sequences with programmable modulus feature the controllable localization of strain along metafiber length. The mechano-metafibers feature two essential nonlinear deformation modes, which are local strain amplification and retardation. This work extends the sequence-encoded metafiber into fiber networks to exhibit greatly enhanced strain amplification and retardation capability in cascades. Local strain engineering enables the design of highly sensitive strain sensors, stretchable fiber devices to protect brittle components and the fabrication of high-voltage supercapacitors as well as axial electroluminescent arrays. The approach allows the scalably design of multimaterial metafibers with programmable localized mechanical properties for woven metamaterials, smart textiles, and wearable electronics.

Milligrams to kilograms: making microbes work at scale

If biomanufacturing can become a sustainable route for producing chemicals, it will provide a critical step in reducing greenhouse gas emissions to fight climate change. However, efforts to industrialize microbial synthesis of chemicals have met with varied success, due, in part, to challenges in translating laboratory successes to industrial scale. With a particular focus on Escherichia coli, this review examines the lessons learned when studying microbial physiology and metabolism under conditions that simulate large-scale bioreactors and methods to minimize cellular waste through reduction of maintenance energy, optimizing the stress response and minimizing culture heterogeneity. With general strategies to overcome these challenges, biomanufacturing process scale-up could be de-risked and the time and cost of bringing promising syntheses to market could be reduced.

Spatial Tuning of Light-Matter Interaction via Strain-Gradient-Induced Polarization in Freestanding Wrinkled 2D Materials

To date, controlled deformation of two-dimensional (2D) materials has been extensively demonstrated with substrate-supported structures. However, interfacial effects arising from these supporting materials may suppress or alter the unique behavior of the deformed 2D materials. To address interfacial effects, we report, for the first time, the formation of a micrometer-scale freestanding wrinkled structure of 2D material without any encapsulation layers where we observed the enhanced light-matter interactions with a spatial modulation. Freestanding wrinkled monolayer WSe2 exhibited about a 330% enhancement relative to supported wrinkled WSe2 quantified through photoinduced force microscopy. Spatial modulation and enhancement of light interaction in the freestanding wrinkled structures are attributed to the enhanced strain-gradient effect (i.e., out-of-plane polarization) enabled by removing the constraining support and proximate dielectrics. Our findings offer an additional degree of freedom to modulate the out-of-plane polarization and enhance the out-of-plane light-matter interaction in 2D materials.

Nonlinear Optical Responses of Janus MoSSe/MoS2 Heterobilayers Optimized by Stacking Order and Strain

Nonlinear optical responses in second harmonic generation (SHG) of van der Waals heterobilayers, Janus MoSSe/MoS2, are theoretically optimized as a function of strain and stacking order by adopting an exchange-correlation hybrid functional and a real-time approach in first-principles calculation. We find that the calculated nonlinear susceptibility, χ(2), in AA stacking (550 pm/V) becomes three times as large as AB stacking (170 pm/V) due to the broken inversion symmetry in the AA stacking. The present theoretical prediction is compared with the observed SHG spectra of Janus MoSSe/MoS2 heterobilayers, in which the peak SHG intensity of AA stacking becomes four times as large as AB stacking. Furthermore, a relatively large, two-dimensional strain (4%) that breaks the C3v point group symmetry of the MoSSe/MoS2, enhances calculated χ(2) values for both AA (900 pm/V) and AB (300 pm/V) stackings 1.6 times as large as that without strain.

Realization of high-order topological phase transition in 2D metal-organic frameworks

In two-dimensional (2D) scale, controllable topological phase transition between a conventional topological quantum state and a higher-order one has been a challenge currently. Herein, based on first-principles, we report 2D metal-organic frameworks (MOFs) are ideal choice for realizing such topological phase transition. Taking MOF candidate Pd3(C6S6)2as an example, a semimetallic band structure is present at the equilibrium state. Under moderate compressive strain, it features a nontrivial energy gap and corner states, which is evidenced as a second-order topological insulator (SOTI). In addition, the band order for its low-energy bands switches at moderate tensile strain, during which topological phase transition from SOTI and topological semimetal to double Weyl semimetal (DWSM) happens, accompanied by the change in real Chern number formνR=1toνR=0. At the critical point for the phase transition, the system can be characterized as a 2D pseudospin-1 fermion. Beside Pd3(C6S6)2, we further identify the ferromagnetic monolayer Fe3(C6S6)2can also take the DWSM-to-SOTI phase transition, where the topological fermions and corresponding edge/corner states could be fully spin-polarized. This work has for the first time realized topological transition between conventional topological quantum state and a higher-order one in both nonmagnetic and magnetic MOFs.

Latest Innovations in 2D Flexible Nanoelectronics

2D materials with dangling-bond-free surfaces and atomically thin layers have been shown to be capable of being incorporated into flexible electronic devices. The electronic and optical properties of 2D materials can be tuned or controlled in other ways by using the intriguing strain engineering method. The latest and encouraging techniques in regard to creating flexible 2D nanoelectronics are condensed in this review. These techniques have the potential to be used in a wider range of applications in the near and long term. It is possible to use ultrathin 2D materials (graphene, BP, WTe2 , VSe2 etc.) and 2D transition metal dichalcogenides (2D TMDs) in order to enable the electrical behavior of the devices to be studied. A category of materials is produced on smaller scales by exfoliating bulk materials, whereas chemical vapor deposition (CVD) and epitaxial growth are employed on larger scales. This overview highlights two distinct requirements, which include from a single semiconductor or with van der Waals heterostructures of various nanomaterials. They include where strain must be avoided and where it is required, such as solutions to produce strain-insensitive devices, and such as pressure-sensitive outcomes, respectively. Finally, points-of-view about the current difficulties and possibilities in regard to using 2D materials in flexible electronics are provided.

Single-Layer GaInSe3: Promising Water-Splitting Photocatalyst with Solar Conversion Efficiency over 30% from Theoretical Calculations

Hydrogen energy from solar water-splitting is known as an ideal method with which to address the energy crisis and global environmental pollution. Herein, the first-principles calculations are carried out to study the photocatalytic water-splitting performance of single-layer GaInSe3 under biaxial strains from -2% to +2%. Calculations reveal that single-layer GaInSe3 under various biaxial strains has electronic bandgaps ranging from 1.11 to 1.28 eV under biaxial strain from -2% to +2%, as well as a completely separated valence band maximum and conduction band minimum. Meanwhile, the appropriate band edges for water-splitting and visible optical absorption up to ~3 × 105 cm-1 are obtained under biaxial strains from -2% to 0%. More impressively, the solar conversion efficiency of single-layer GaInSe3 under biaxial strains from -2% to 0% reaches over 30%. The OER of unstrained single-layer GaInSe3 can proceed without co-catalysts. These demonstrate that single-layer GaInSe3 is a viable material for solar water-splitting.

Maximizing microbial bioproduction from sustainable carbon sources using iterative systems engineering

Maximizing the production of heterologous biomolecules is a complex problem that can be addressed with a systems-level understanding of cellular metabolism and regulation. Specifically, growth-coupling approaches can increase product titers and yields and also enhance production rates. However, implementing these methods for non-canonical carbon streams is challenging due to gaps in metabolic models. Over four design-build-test-learn cycles, we rewire Pseudomonas putida KT2440 for growth-coupled production of indigoidine from para-coumarate. We explore 4,114 potential growth-coupling solutions and refine one design through laboratory evolution and ensemble data-driven methods. The final growth-coupled strain produces 7.3 g/L indigoidine at 77% maximum theoretical yield in para-coumarate minimal medium. The iterative use of growth-coupling designs and functional genomics with experimental validation was highly effective and agnostic to specific hosts, carbon streams, and final products and thus generalizable across many systems.

Tuning Electrical and Mechanical Properties of Metal-Organic Frameworks by Metal Substitution

Metal-organic frameworks (MOFs), synthesized by the self-assembly of organic ligands and metal centers, are structurally designable materials. In the current study, first-principles calculation based on density functional theory (DFT) was performed to investigate the intrinsic mechanical and electrical properties and mechanical-electrical coupling behavior of MOF-5. To improve the conductivity of MOF-5, homologous elements of Cu, Ag, and Au were adopted to replace the Zn atom in MOF-5, reducing the band gap and improving its electrical performance. Cu-MOF-5 and Au-MOF-5, with stable structures, exhibit better conductivity. The intrinsic mechanical properties such as independent elastic constants of MOF-5 and M-MOF-5 (M = Cu, Ag, Au) were obtained. MOF-5 and Cu-MOF-5 were experimentally synthesized to demonstrate the reduction in the band gap after metal substitution. The study of the strain effect of MOF-5 and Cu-MOF-5 proves that strain engineering is an effective method to regulate the band gap and this modulation is repeatable. This study clarifies the tunability of the band gap of MOF-5 with metal substituents and provides an efficient strategy for the development of new types of MOFs with desired physical properties using the combination of theoretical prediction and experimental synthesis and validation.

Ultrafast Electronic Relaxation Dynamics of Atomically Thin MoS2 Is Accelerated by Wrinkling

Strain engineering is an attractive approach for tuning the local optoelectronic properties of transition metal dichalcogenides (TMDs). While strain has been shown to affect the nanosecond carrier recombination dynamics of TMDs, its influence on the sub-picosecond electronic relaxation dynamics is still unexplored. Here, we employ a combination of time-resolved photoemission electron microscopy (TR-PEEM) and nonadiabatic ab initio molecular dynamics (NAMD) to investigate the ultrafast dynamics of wrinkled multilayer (ML) MoS2 comprising 17 layers. Following 2.41 eV photoexcitation, electronic relaxation at the Γ valley occurs with a time constant of 97 ± 2 fs for wrinkled ML-MoS2 and 120 ± 2 fs for flat ML-MoS2. NAMD shows that wrinkling permits larger amplitude motions of MoS2 layers, relaxes electron-phonon coupling selection rules, perturbs chemical bonding, and increases the electronic density of states. As a result, the nonadiabatic coupling grows and electronic relaxation becomes faster compared to flat ML-MoS2. Our study suggests that the sub-picosecond electronic relaxation dynamics of TMDs is amenable to strain engineering and that applications which require long-lived hot carriers, such as hot-electron-driven light harvesting and photocatalysis, should employ wrinkle-free TMDs.

Product-driven high-throughput screening of industrial filamentous actinomycetes

Traditional strain breeding of industrial filamentous actinomycetes has long been hampered by insufficient screening throughput. From microtiter plate based methods to droplet-based microfluidic screening, various novel product-driven high-throughput screening (HTS) methods have pushed the screening speed limit towards a minimum of hundreds of strains per second with single cell resolution.

Strain Engineering of the NiTe/Ni2P Heterostructure to Boost the Oxygen Evolution Reaction

Discovering highly efficient and stable non-precious metal catalysts for the oxygen evolution reaction (OER) is crucial for energy conversion in water splitting. However, preparing high-performance OER catalysts and elucidating the structural changes in the process are still challenging. Herein, we synthesize the NiTe/Ni2P heterostructure and demonstrate the strain engineering of NiTe/Ni2P via the lattice incompatibility between the phosphide and the telluride. The strain engineering of the NiTe/Ni2P heterostructure not only significantly boosts the OER activity but also effectively stabilizes the intrinsic structure of the catalyst after the OER process by using the in situ-produced metal salt as a protection layer. After the OER stability test, no oxyhydroxide phase is observed, and in situ Raman spectroscopy reveals that a voltage-dependent phase transition appears during the OER, which is different from most previously reported Ni-based catalysts, for which the generation of irreversible NiOOH occurs after the OER. Density functional theory calculations further reveal that the tensile strain of Ni2P will inhibit the presence of irreversible phase transitions of Ni2P into NiOOH due to the weak adsorption ability of the oxygen species caused by strain engineering. In short, this work opens a new gate for using strain nanotechnology to design high-performance OER catalysts.

Strain Engineering of Intrinsic Ferromagnetism in 2D van der Waals Materials

Since the discovery of the low-temperature, long-range ferromagnetic order in monolayers Cr2Ge2Te6 and CrI3, many efforts have been made to achieve a room temperature (RT) ferromagnet. The outstanding deformation ability of two-dimensional (2D) materials provides an exciting way to mediate their intrinsic ferromagnetism (FM) with strain engineering. Here, we summarize the recent progress of strain engineering of intrinsic FM in 2D van der Waals materials. First, we introduce how to explain the strain-mediated intrinsic FM on Cr-based and Fe-based 2D van der Waals materials through ab initio Density functional theory (DFT), and how to calculate magnetic anisotropy energy (MAE) and Curie temperature (TC) from the interlayer exchange coupling J. Subsequently, we focus on numerous attempts to apply strain to 2D materials in experiments, including wrinkle-induced strain, flexible substrate bending or stretching, lattice mismatch, electrostatic force and field-cooling. Last, we emphasize that this field is still in early stages, and there are many challenges that need to be overcome. More importantly, strengthening the guideline of strain-mediated FM in 2D van der Waals materials will promote the development of spintronics and straintronics.

Engineering the Strain and Interlayer Excitons of 2D Materials via Lithographically Engraved Hexagonal Boron Nitride

Strain engineering has quickly emerged as a viable option to modify the electronic, optical, and magnetic properties of 2D materials. However, it remains challenging to arbitrarily control the strain. Here we show that, by creating atomically flat surface nanostructures in hexagonal boron nitride, we achieve an arbitrary on-chip control of both the strain distribution and magnitude on high-quality molybdenum disulfide. The phonon and exciton emissions are shown to vary in accordance with our strain field designs, enabling us to write and draw any photoluminescence color image in a single chip. Moreover, our strain engineering offers a powerful means to significantly and controllably alter the strengths and energies of interlayer excitons at room temperature. This method can be easily extended to other material systems and offers promise for functional excitonic devices.

Mobility Enhancement of Strained MoS2 Transistor on Flat Substrate

Strain engineering has been proposed as a promising method to boost the carrier mobility of two-dimensional (2D) semiconductors. However, state-of-the-art straining approaches are largely based on putting 2D semiconductors on flexible substrates or rough substrate with nanostructures (e.g., nanoparticles, nanorods, ripples), where the observed mobility change is not only dependent on channel strain but could be impacted by the change of dielectric environment as well as rough interface scattering. Therefore, it remains an open question whether the pure lattice strain could improve the carrier mobilities of 2D semiconductors, limiting the achievement of high-performance 2D transistors. Here, we report a strain engineering approach to fabricate highly strained MoS2 transistors on a flat substrate. By mechanically laminating a prefabricated MoS2 transistor onto a custom-designed trench structure on flat substrate, well-controlled strain can be uniformly generated across the 2D channel. In the meantime, the substrate and the back-gate dielectric layer remain flat without any roughness-induced scattering effect or variation of the dielectric environment. Based on this technique, we demonstrate the MoS2 electron mobility could be enhanced by tension strain and decreased by compression strain, consistent with theoretical predictions. The highest mobility enhancement is 152% for monolayer MoS2 and 64% for bilayer MoS2 transistors, comparable to that of a silicon device. Our method not only provides a compatible approach to uniformly strain the layered semiconductors on flat and solid substrate but also demonstrates an effective method to boost the carrier mobilities of 2D transistors.

Crystalline AuNP-Decorated Strontium Niobate Thin Films: Strain-Controlled AuNP Morphologies and Optical Properties for Plasmonic Applications

Gold nanoparticle (AuNP) decoration is a commonly used method to enhance the optical responses in many applications such as photocatalysis, biosensing, solar cells, etc. The morphology and structure of AuNPs are essential factors determining the functionality of the sample. However, tailoring the growth mechanism of AuNPs on an identical surface is not straightforward. In this study, AuNPs were deposited on the surface of a perovskite thin film, strontium niobate (SNO), using pulsed laser deposition (PLD). AuNPs exhibited a dramatic variation in their growth mechanisms, depending on whether they were deposited on SNO thin films grown on magnesium oxide (SNO/MgO) or strontium titanate (SNO/STO) substrates. On SNO/MgO, the Au aggregates form large NPs with an average size of up to 3500 nm². These AuNPs are triangular with sharp edges and corners. The out-of-plane direction of growth is favored, and the surface coverage ratio by AuNPs is low. When deposited on SNO/STO, the average size of AuNPs is much smaller, i.e., ∼250 nm². This reduction in the average size is accompanied by an increase in the number density of NPs. AuNPs on SNO/STO have a round shape and high coverage ratio. Such an impact from the substrate selection on the AuNP structure is significant when the sandwiched SNO film is below 80 nm thickness and is weakened for 200 nm of SNO films. X-ray diffraction (XRD) and scanning electron microscopy (SEM) were used to characterize all samples. Strain analysis was used to explain the growth mechanism of AuNPs. The average height of AuNPs was measured by using atomic force microscopy (AFM). Ellipsometry in the visible-near-infrared (vis-NIR) region was used to characterize the optical response of all samples. AuNP-decorated SNO/MgO and SNO/STO thin films exhibit different optical properties, with only gold-decorated SNO/MgO samples showing a size-dependent epsilon-near-zero behavior of nanoparticles. These results provide an additional route to control the structure of AuNPs. They can be used for various plasmonic applications like the design and development of strain-engineered gold-nanoparticle-decorated devices for surface-enhanced Raman spectroscopy (SERS) and photocatalysis.

2D PtSe2 Enabled Wireless Wearable Gas Monitoring Circuits with Distinctive Strain-Enhanced Performance

The application of 2D materials-based flexible electronics in wearable scenarios is limited due to performance degradation under strain fields. In contrast to its negative role in existing transistors or sensors, herein, we discover a positive effect of strain to the ammonia detection in 2D PtSe₂. Linear modulation of sensitivity is achieved in flexible 2D PtSe₂ sensors via a customized probe station with an in situ strain loading apparatus. For trace ammonia absorption, a 300% enhancement in room-temperature sensitivity (31.67% ppm^-1) and an ultralow limit of detection (50 ppb) are observed under 1/4 mm^-1 curvature strain. We identify three types of strain-sensitive adsorption sites in layered PtSe₂ and pinpoint that basal-plane lattice distortion contributes to better sensing performance resulting from reduced absorption energy and larger charge transfer density. Furthermore, we demonstrate state-of-the-art 2D PtSe₂-based wireless wearable integrated circuits, which allow real-time gas sensing data acquisition, processing, and transmission through a Bluetooth module to user terminals. The circuits exhibit a wide detection range with a maximum sensitivity value of 0.026 V·ppm^-1 and a low energy consumption below 2 mW.

Deterministic nanoscale quantum spin-defect implantation and diffraction strain imaging

Local crystallographic features negatively affect quantum spin defects by changing the local electrostatic environment, often resulting in degraded or varied qubit optical and coherence properties. Few tools exist that enable the deterministic synthesis and study of such intricate systems on the nano-scale, making defect-to-defect strain environment quantification difficult. In this paper, we highlight state-of-the-art capabilities from the U.S. Department of Energy's Nanoscale Science Research Centers that directly address these shortcomings. Specifically, we demonstrate how complementary capabilities of nano-implantation and nano-diffraction can be used to demonstrate the quantum relevant spatially deterministic creation of neutral divacancy centers in 4H silicon carbide, while investigating and characterizing these systems on the ≤25 nm scale with strain sensitivities on the order of 1⋅10^-6, relevant to defect formation dynamics. This work lays the foundation for ongoing studies into the dynamics and deterministic formation of low strain homogeneous quantum relevant spin defects in the solid state.&#xD.

Achieving Ferroelectricity in a Centrosymmetric High-Performance Semiconductor by Strain Engineering

Phase engineering by strain in 2D semiconductors is of great importance for a variety of applications. Here, a study of the strain-induced ferroelectric (FE) transition in bismuth oxyselenide (Bi₂ O₂ Se) films, a high-performance (HP) semiconductor for next-generation electronics, is presented. Bi₂ O₂ Se is not FE at ambient pressure. At a loading force of ≳400 nN, the piezoelectric force responses exhibit butterfly loops in magnitude and 180° phase switching. By carefully ruling out extrinsic factors, these features are attributed to a transition to the FE phase. The transition is further supported by the appearance of a sharp peak in optical second-harmonic generation under uniaxial strain. In general, solids with paraelectrics at ambient pressure and FE under strain are rare. The FE transition is discussed using first-principles calculations and theoretical simulations. The switching of FE polarization acts as a knob for Schottky barrier engineering at contacts and serves as the basis for a memristor with a huge on/off current ratio of 10⁶ . This work adds a new degree of freedom to HP electronic/optoelectronic semiconductors, and the integration of FE and HP semiconductivity paves the way for many exciting functionalities, including HP neuromorphic computing and bulk piezophotovoltaics.

Bendable Silicene Membranes

Due to their superior mechanical properties, two-dimensional (2D) materials have gained interest as active layers in flexible devices co-integrating electronic, photonic, and straintronic functions altogether. To this end, 2D bendable membranes compatible with the technological process standards and endowed with large scale uniformity are highly desired. Here, we report on the realization of bendable membranes based on silicene layers (the 2D form of silicon) by means of a process in which the layers are fully detached from the native bulk substrate and then transferred onto arbitrary flexible substrates. The application of macroscopic mechanical deformations induces a strain-responsive behavior in the Raman spectrum of silicene. We also show that the membranes under elastic tension relaxation are prone to form microscale wrinkles displaying a local generation of strain in the silicene layer consistent with that observed under macroscopic mechanical deformation. Optothermal Raman spectroscopy measurements reveal a curvature-dependent heat dispersion in silicene wrinkles. Finally, as compelling evidence of the technological potential of the silicene membranes, we demonstrate that they can be readily introduced into a lithographic process flow resulting in the definition of flexible device-ready architectures, e.g. piezoresistor, and thus paving the way to a viable advance in a fully silicon-compatible technology framework. This article is protected by copyright. All rights reserved.

The First Demonstration of Strain-Controlled Periodic Ferroelectric Domains with Superior Piezoelectric Response in Molecular Materials

Achieving a periodic domain structure in ferroelectric materials to tailor the macroscopic properties or realize new functions has always been a hot topic. However, methods to construct periodic domain structures, such as epitaxial growth, direct writing by scanning tips, and the patterned electrode method, are difficult or inefficient to implement in emerging molecular ferroelectrics, which have the advantages of lightweight, flexibility, biocompatibility, etc. An efficient method for constructing and controlling periodic domain structures is urgently needed to facilitate the development of molecular ferroelectrics in nanoelectronic devices. In this work, it is demonstrated that large-area, periodic and controllable needle-like domain structures can be achieved in thin films of the molecular ferroelectric trimethylchloromethyl ammonium trichlorocadmium (TMCM-CdCl₃ ) upon the application of tensile strain. The domain evolution under various tensile strains can be clearly observed, and such processes are accordingly identified. Furthermore, the domain wall exhibits a superior piezoelectric response, with up to fivefold enhancement compared to that of the pristine samples. Such large-area tunable periodic domain structure and abnormally strong piezoresponse are not only of great interests in fundamental studies, but also highly important in the future applications in functional molecular materials.

Tuning Multiple Landau Quantization in Transition-Metal Dichalcogenide with Strain

Landau quantization associated with the quantized cyclotron motion of electrons under magnetic field provides the effective way to investigate topologically protected quantum states with entangled degrees of freedom and multiple quantum numbers. Here we report the cascade of Landau quantization in a strained type-II Dirac semimetal NiTe₂ with spectroscopic-imaging scanning tunneling microscopy. The uniform-height surfaces exhibit single-sequence Landau levels (LLs) at a magnetic field originating from the quantization of topological surface state (TSS) across the Fermi level. Strikingly, we reveal the multiple sequence of LLs in the strained surface regions where the rotation symmetry is broken. First-principles calculations demonstrate that the multiple LLs attest to the remarkable lifting of the valley degeneracy of TSS by the in-plane uniaxial or shear strains. Our findings pave a pathway to tune multiple degrees of freedom and quantum numbers of TMDs via strain engineering for practical applications such as high-frequency rectifiers, Josephson diode and valleytronics.