Additive roles of antiferromagnetically coupled elements in the magnetic proximity effect in the GdFeCo/Pt system

Interfacial magnetic interactions between different elements are the origin of various spin-transport phenomena in multi-elemental magnetic systems. We investigate the coupling between the magnetic moments of the rare-earth, transition-metal, and heavy-metal elements across the interface in a GdFeCo/Pt thin film, an archetype system to investigate ferrimagnetic spintronics. The Pt magnetic moments induced by the antiferromagnetically aligned FeCo and Gd moments are measured using element-resolved x-ray measurements. It is revealed that the proximity-induced Pt magnetic moments are always aligned parallel to the FeCo magnetic moments, even below the ferrimagnetic compensation temperature where FeCo has a smaller moment than Gd. This is understood by a theoretical model showing distinct effects of the rare-earth Gd 4f and transition-metal FeCo 3d magnetic moments on the Pt electronic states. In particular, the Gd and FeCo work in-phase to align the Pt moment in the same direction, despite their antiferromagnetic configuration. The unexpected additive roles of the two antiferromagnetically coupled elements exemplify the importance of detailed interactions among the constituent elements in understanding magnetic and spintronic properties of thin film systems.

Nonreciprocal and Nonvolatile Electric-Field Switching of Magnetism in van der Waals Heterostructure Multiferroics

Multiferroic materials provide robust and efficient routes for the control of magnetism by electric fields, which have been diligently sought after for a long time. Construction of two-dimensional (2D) vdW multiferroics is a more exciting endeavor. To date, the nonvolatile manipulation of magnetism through ferroelectric polarization still remains challenging in a 2D vdW heterostructure multiferroic. Here, we report a van der Waals (vdW) heterostructure multiferroic comprising the atomically thin layered antiferromagnet (AFM) CrI3 and ferroelectric (FE) α-In2Se3. We demonstrate anomalously nonreciprocal and nonvolatile electric-field control of magnetization by ferroelectric polarization. The nonreciprocal electric control originates from an intriguing antisymmetric enhancement of interlayer ferromagnetic coupling in the opposite ferroelectric polarization configurations of α-In2Se3. Our work provides numerous possibilities for creating diverse heterostructure multiferroics at the limit of a few atomic layers for multistage magnetic memories and brain-inspired in-memory computing.

Stable skyrmion bundles at room temperature and zero magnetic field in a chiral magnet

Topological spin textures are characterized by magnetic topological charges, Q, which govern their electromagnetic properties. Recent studies have achieved skyrmion bundles with arbitrary integer values of Q, opening possibilities for exploring topological spintronics based on Q. However, the realization of stable skyrmion bundles in chiral magnets at room temperature and zero magnetic field - the prerequisite for realistic device applications - has remained elusive. Here, through the combination of pulsed currents and reversed magnetic fields, we experimentally achieve skyrmion bundles with different integer Q values - reaching a maximum of 24 at above room temperature and zero magnetic field - in the chiral magnet Co8Zn10Mn2. We demonstrate the field-driven annihilation of high-Q bundles and present a phase diagram as a function of temperature and field. Our experimental findings are consistently corroborated by micromagnetic simulations, which reveal the nature of the skyrmion bundle as that of skyrmion tubes encircled by a fractional Hopfion.

Sign Reversal of Spin-Transfer Torques

Spin-transfer torque (STT) and spin-orbit torque (SOT) form the core of spintronics, allowing for the control of magnetization through electric currents. While the sign of SOT can be manipulated through material and structural engineering, it is conventionally understood that STT lacks a degree of freedom in its sign. However, this study presents the first demonstration of manipulating the STT sign by engineering heavy metals adjacent to magnetic materials in magnetic heterostructures. Spin torques are quantified through magnetic domain-wall speed measurements, and subsequently, both STT and SOT are systematically extracted from these measurements. The results unequivocally show that the sign of STT can be either positive or negative, depending on the materials adjacent to the magnetic layers. Specifically, Pd/Co/Pd films exhibit positive STT, while Pt/Co/Pt films manifest negative STT. First-principle calculations further confirm that the sign reversal of STT originates from the sign reversal of spin polarization of conduction electrons.

Emerging Nonlinear Photocurrents in Lead Halide Perovskites for Spintronics

Lead halide perovskites (LHPs) containing organic parts are emerging optoelectronic materials with a wide range of applications thanks to their high optical absorption, carrier mobility, and easy preparation methods. They possess spin-dependent properties, such as strong spin-orbit coupling (SOC), and are promising for spintronics. The Rashba effect in LHPs can be manipulated by a magnetic field and a polarized light field. Considering the surfaces and interfaces of LHPs, light polarization-dependent optoelectronics of LHPs has attracted attention, especially in terms of spin-dependent photocurrents (SDPs). Currently, there are intense efforts being made in the identification and separation of SDPs and spin-to-charge interconversion in LHP. Here, we provide a comprehensive review of second-order nonlinear photocurrents in LHP in regard to spintronics. First, a detailed background on Rashba SOC and its related effects (including the inverse Rashba-Edelstein effect) is given. Subsequently, nonlinear photo-induced effects leading to SDPs are presented. Then, SDPs due to the photo-induced inverse spin Hall effect and the circular photogalvanic effect, together with photocurrent due to the photon drag effect, are compared. This is followed by the main focus of nonlinear photocurrents in LHPs containing organic parts, starting from fundamentals related to spin-dependent optoelectronics. Finally, we conclude with a brief summary and future prospects.

Temperature Dependence of Relativistic Valence Band Splitting Induced by an Altermagnetic Phase Transition

Altermagnetic (AM) materials exhibit non-relativistic, momentum-dependent spin-split states, ushering in new opportunities for spin electronic devices. While the characteristics of spin-splitting are documented within the framework of the non-relativistic spin group symmetry, there is limited exploration of the inclusion of relativistic symmetry and its impact on the emergence of a novel spin-splitting in the band structure. This study delves into the intricate relativistic electronic structure of an AM material, α-MnTe. Employing temperature-dependent angle-resolved photoelectron spectroscopy across the AM phase transition, we elucidate the emergence of a relativistic valence band splitting concurrent with the establishment of magnetic order. This discovery is validated through disordered local moment calculations, modeling the influence of magnetic order on the electronic structure and confirming the magnetic origin of the observed splitting. The temperature-dependent splitting is ascribed to the advent of relativistic spin-splitting resulting from the strengthening of AM order in α-MnTe as the temperature decreases. This sheds light on a previously unexplored facet of this intriguing material. This article is protected by copyright. All rights reserved.

Highly efficient field-free switching of perpendicular yttrium iron garnet with collinear spin current

Yttrium iron garnet, a material possessing ultralow magnetic damping and extraordinarily long magnon diffusion length, is the most widely studied magnetic insulator in spintronics and magnonics. Field-free electrical control of perpendicular yttrium iron garnet magnetization with considerable efficiency is highly desired for excellent device performance. Here, we demonstrate such an accomplishment with a collinear spin current, whose spin polarization and propagation direction are both perpendicular to the interface. Remarkably, the field-free magnetization switching is achieved not only with a heavy-metal-free material, Permalloy, but also with a higher efficiency as compared with a typical heavy metal, Pt. Combined with the direct and inverse effect measurements, we ascribe the collinear spin current to the anomalous spin Hall effect in Permalloy. Our findings provide a new insight into spin current generation in Permalloy and open an avenue in spintronic devices.

Extreme terahertz magnon multiplication induced by resonant magnetic pulse pairs

Nonlinear interactions of spin-waves and their quanta, magnons, have emerged as prominent candidates for interference-based technology, ranging from quantum transduction to antiferromagnetic spintronics. Yet magnon multiplication in the terahertz (THz) spectral region represents a major challenge. Intense, resonant magnetic fields from THz pulse-pairs with controllable phases and amplitudes enable high order THz magnon multiplication, distinct from non-resonant nonlinearities such as the high harmonic generation by below-band gap electric fields. Here, we demonstrate exceptionally high-order THz nonlinear magnonics. It manifests as 7th-order spin-wave-mixing and 6th harmonic magnon generation in an antiferromagnetic orthoferrite. We use THz two-dimensional coherent spectroscopy to achieve high-sensitivity detection of nonlinear magnon interactions up to six-magnon quanta in strongly-driven many-magnon correlated states. The high-order magnon multiplication, supported by classical and quantum spin simulations, elucidates the significance of four-fold magnetic anisotropy and Dzyaloshinskii-Moriya symmetry breaking. Moreover, our results shed light on the potential quantum fluctuation properties inherent in nonlinear magnons.

Three-dimensional spin-wave dynamics, localization and interference in a synthetic antiferromagnet

Spin waves are collective perturbations in the orientation of the magnetic moments in magnetically ordered materials. Their rich phenomenology is intrinsically three-dimensional; however, the three-dimensional imaging of spin waves has so far not been possible. Here, we image the three-dimensional dynamics of spin waves excited in a synthetic antiferromagnet, with nanoscale spatial resolution and sub-ns temporal resolution, using time-resolved magnetic laminography. In this way, we map the distribution of the spin-wave modes throughout the volume of the structure, revealing unexpected depth-dependent profiles originating from the interlayer dipolar interaction. We experimentally demonstrate the existence of complex three-dimensional interference patterns and analyze them via micromagnetic modelling. We find that these patterns are generated by the superposition of spin waves with non-uniform amplitude profiles, and that their features can be controlled by tuning the composition and structure of the magnetic system. Our results open unforeseen possibilities for the study and manipulation of complex spin-wave modes within nanostructures and magnonic devices.

Spintronic virtual neural network by a voltage controlled ferromagnet for associative memory

Recently, an associative memory operation by a virtual oscillator network, consisting of a single spintronic oscillator, was examined to solve issues in conventional, real oscillators-based neural networks such as inhomogeneities between the oscillators. However, the spintronic oscillator still carries issues dissipating large amount of energy because it is driven by electric current. Here, we propose to use a single ferromagnet manipulated by voltage-controlled magnetic anisotropy (VCMA) effect as a fundamental element in a virtual neural network, which will contribute to significantly reducing the Joule heating caused by electric current. Instead of the oscillation in oscillator networks, magnetization relaxation dynamics were used for the associative memory operation. The associative memory operation for alphabet patterns is successfully demonstrated by giving correspondences between the colors in a pattern recognition task and the sign of a perpendicular magnetic anisotropy coefficient, which could be either positive or negative via the VCMA effect.

Emerging Antiferromagnets for Spintronics

Antiferromagnets constitute promising contender materials for next-generation spintronic devices with superior stability, scalability, and dynamics. Nevertheless, the perception of well-established ferromagnetic spintronics underpinned by spontaneous magnetization seemed to indicate the inadequacy of antiferromagnets for spintronics-their compensated magnetization has been perceived to result in uncontrollable antiferromagnetic order and subtle magnetoelectronic responses. However, remarkable advancements have been achieved in antiferromagnetic spintronics in recent years, with consecutive unanticipated discoveries substantiating the feasibility of antiferromagnet-centered spintronic devices. It is emphasized that, distinct from ferromagnets, the richness in complex antiferromagnetic crystal structures is the unique and essential virtue of antiferromagnets that can open up their endless possibilities of novel phenomena and functionality for spintronics. In this Perspective, the recent progress in antiferromagnetic spintronics is reviewed, with a particular focus on that based on several kinds of antiferromagnets with special antiferromagnetic crystal structures. The latest developments in efficiently manipulating antiferromagnetic order, exploring novel antiferromagnetic physical responses, and demonstrating prototype antiferromagnetic spintronic devices are discussed. An outlook on future research directions is also provided. It is hoped that this Perspective can serve as guidance for readers who are interested in this field and encourage unprecedented studies on antiferromagnetic spintronic materials, phenomena, and devices.

Atomic-Layer Controlled Transition from Inverse Rashba-Edelstein Effect to Inverse Spin Hall Effect in 2D PtSe2 Probed by THz Spintronic Emission

2D materials, such as transition metal dichalcogenides, are ideal platforms for spin-to-charge conversion (SCC) as they possess strong spin-orbit coupling (SOC), reduced dimensionality and crystal symmetries as well as tuneable band structure, compared to metallic structures. Moreover, SCC can be tuned with the number of layers, electric field, or strain. Here, SCC in epitaxially grown 2D PtSe2 by THz spintronic emission is studied since its 1T crystal symmetry and strong SOC favor SCC. High quality of as-grown PtSe2 layers is demonstrated, followed by in situ ferromagnet deposition by sputtering that leaves the PtSe2 unaffected, resulting in well-defined clean interfaces as evidenced with extensive characterization. Through this atomic growth control and using THz spintronic emission, the unique thickness-dependent electronic structure of PtSe2 allows the control of SCC. Indeed, the transition from the inverse Rashba-Edelstein effect (IREE) in 1-3 monolayers (ML) to the inverse spin Hall effect (ISHE) in multilayers (>3 ML) of PtSe2 enabling the extraction of the perpendicular spin diffusion length and relative strength of IREE and ISHE is demonstrated. This band structure flexibility makes PtSe2 an ideal candidate to explore the underlying mechanisms and engineering of the SCC as well as for the development of tuneable THz spintronic emitters.

Thickness-Dependent Gilbert Damping and Soft Magnetism in Metal/Co-Fe-B/Metal Sandwich Structure

The achievement of the low Gilbert damping parameter in spin dynamic modulation is attractive for spintronic devices with low energy consumption and high speed. Metallic ferromagnetic alloy Co-Fe-B is a possible candidate due to its high compatibility with spintronic technologies. Here, we report thickness-dependent damping and soft magnetism in Co-Fe-B films sandwiched between two non-magnetic layers with Co-Fe-B films up to 50 nm thick. A non-monotonic variation of Co-Fe-B film damping with thickness is observed, which is in contrast to previously reported monotonic trends. The minimum damping and the corresponding Co-Fe-B thickness vary significantly among the different non-magnetic layer series, indicating that the structure selection significantly alters the relative contributions of various damping mechanisms. Thus, we developed a quantitative method to distinguish intrinsic from extrinsic damping via ferromagnetic resonance measurements of thickness-dependent damping rather than the traditional numerical calculation method. By separating extrinsic and intrinsic damping, each mechanism affecting the total damping of Co-Fe-B films in sandwich structures is analyzed in detail. Our findings have revealed that the thickness-dependent damping measurement is an effective tool for quantitatively investigating different damping mechanisms. This investigation provides an understanding of underlying mechanisms and opens up avenues for achieving low damping in Co-Fe-B alloy film, which is beneficial for the applications in spintronic devices design and optimization.

Frontiers in all electrical control of magnetization by spin orbit torque

Achieving all electrical control of magnetism without assistance of an external magnetic field has been highly pursued for spintronic applications. In recent years, the manipulation of magnetic states through spin-orbit torque (SOT) has emerged as a promising avenue for realizing energy-efficient spintronic memory and logic devices. Here, we provide a review of the rapidly evolving research frontiers in all electrical control of magnetization by SOT. The first part introduces the SOT mechanisms and SOT devices with different configurations. In the second part, the developments in all electrical SOT control of magnetization enabled by spin current engineering are introduced, which include the approaches of lateral symmetry breaking, crystalline structure engineering of spin source material, antiferromagnetic order and interface-generated spin current. The third part introduces all electrical SOT switching enabled by magnetization engineering of the ferromagnet, such as the interface/interlayer exchange coupling and tuning of anisotropy or magnetization. At last, we provide a summary and future perspectives for all electrical control of magnetization by SOT.

Sm and Gd Contacts in 2D Semiconductors for High-Performance Electronics and Spintronics

Two-dimensional (2D) semiconductors have attracted great attention due to their rich electronic properties and even been considered to have the potential to extend Moore's Law. However, the Schottky barrier between the metal and 2D semiconductor is formed due to the metal-induced gap states (MIGS), which greatly hinder the development of 2D semiconductor transistors in large-scale integrated circuits. Meanwhile, most air-stable 2D semiconductors are nonmagnetic, limiting the possibility of spintronic application. Here, we report a new strategy to suppress the MIGS and reduce the Schottky barrier height on 2D semiconductors (MoS2, WS2, and WSe2) by using lanthanide metal (Sm and Gd) contacts. It was found the lanthanide contacts exhibit a good Ohmic property with a near-zero Schottky barrier. As a result, the carrier mobility of MoS2 transistors reaches 118 cm2/(V s). Furthermore, Gd-contact MoS2 transistors show the typical magnetic property where the magnetoresistance reaches 2.7% at 5 K. By studying its spin valve effect, it was demonstrated that the nonlocal magnetoresistance is 4.1% and spin polarization is 3.25%. This study provides a promising pathway for high-performance 2D electronic and spintronics, which may open a new strategy for future computing-in-memory architecture.

Ultrafast magnetization enhancement via the dynamic spin-filter effect of type-II Weyl nodes in a kagome ferromagnet

The magnetic type-II Weyl semimetal (MWSM) Co3Sn2S2 has recently been found to host a variety of remarkable phenomena including surface Fermi-arcs, giant anomalous Hall effect, and negative flat band magnetism. However, the dynamic magnetic properties remain relatively unexplored. Here, we investigate the ultrafast spin dynamics of Co3Sn2S2 crystal using time-resolved magneto-optical Kerr effect and reflectivity spectroscopies. We observe a transient magnetization behavior, consisting of spin-flipping dominated fast demagnetization, slow demagnetization due to overall half-metallic electronic structures, and an unexpected ultrafast magnetization enhancement lasting hundreds of picoseconds upon femtosecond laser excitation. By combining temperature-, pump fluence-, and pump polarization-dependent measurements, we unambiguously demonstrate the correlation between the ultrafast magnetization enhancement and the Weyl nodes. Our theoretical modelling suggests that the excited electrons are spin-polarized when relaxing, leading to the enhanced spin-up density of states near the Fermi level and the consequently unusual magnetization enhancement. Our results reveal the unique role of the Weyl properties of Co3Sn2S2 in femtosecond laser-induced spin dynamics.

Magnetic droplet soliton pairs

We demonstrate magnetic droplet soliton pairs in all-perpendicular spin-torque nano-oscillators (STNOs), where one droplet resides in the STNO free layer (FL) and the other in the reference layer (RL). Typically, theoretical, numerical, and experimental droplet studies have focused on the FL, with any additional dynamics in the RL entirely ignored. Here we show that there is not only significant magnetodynamics in the RL, but the RL itself can host a droplet driven by, and coexisting with, the FL droplet. Both single droplets and pairs are observed experimentally as stepwise changes and sharp peaks in the dc and differential resistance, respectively. While the single FL droplet is highly stable, the coexistence state exhibits high-power broadband microwave noise. Furthermore, micromagnetic simulations reveal that the pair dynamics display periodic, quasi-periodic, and chaotic signatures controlled by applied field and current. The strongly interacting and closely spaced droplet pair offers a unique platform for fundamental studies of highly non-linear soliton pair dynamics.

Ultrastrong to nearly deep-strong magnon-magnon coupling with a high degree of freedom in synthetic antiferromagnets

Ultrastrong and deep-strong coupling are two coupling regimes rich in intriguing physical phenomena. Recently, hybrid magnonic systems have emerged as promising candidates for exploring these regimes, owing to their unique advantages in quantum engineering. However, because of the relatively weak coupling between magnons and other quasiparticles, ultrastrong coupling is predominantly realized at cryogenic temperatures, while deep-strong coupling remains to be explored. In our work, we achieve both theoretical and experimental realization of room-temperature ultrastrong magnon-magnon coupling in synthetic antiferromagnets with intrinsic asymmetry of magnetic anisotropy. Unlike most ultrastrong coupling systems, where the counter-rotating coupling strength g2 is strictly equal to the co-rotating coupling strength g1, our systems allow for highly tunable g1 and g2. This high degree of freedom also enables the realization of normalized g1 or g2 larger than 0.5. Particularly, our experimental findings reveal that the maximum observed g1 is nearly identical to the bare frequency, with g1/ω0 = 0.963, indicating a close realization of deep-strong coupling within our hybrid magnonic systems. Our results highlight synthetic antiferromagnets as platforms for exploring unconventional ultrastrong and even deep-strong coupling regimes, facilitating the further exploration of quantum phenomena.

Room temperature chirality switching and detection in a helimagnetic MnAu2 thin film

Helimagnetic structures, in which the magnetic moments are spirally ordered, host an internal degree of freedom called chirality corresponding to the handedness of the helix. The chirality seems quite robust against disturbances and is therefore promising for next-generation magnetic memory. While the chirality control was recently achieved by the magnetic field sweep with the application of an electric current at low temperature in a conducting helimagnet, problems such as low working temperature and cumbersome control and detection methods have to be solved in practical applications. Here we show chirality switching by electric current pulses at room temperature in a thin-film MnAu2 helimagnetic conductor. Moreover, we have succeeded in detecting the chirality at zero magnetic fields by means of simple transverse resistance measurement utilizing the spin Berry phase in a bilayer device composed of MnAu2 and a spin Hall material Pt. These results may pave the way to helimagnet-based spintronics.

Orbitronics: light-induced orbital currents in Ni studied by terahertz emission experiments

Orbitronics is based on the use of orbital currents as information carriers. Orbital currents can be generated from the conversion of charge or spin currents, and inversely, they could be converted back to charge or spin currents. Here we demonstrate that orbital currents can also be generated by femtosecond light pulses on Ni. In multilayers associating Ni with oxides and nonmagnetic metals such as Cu, we detect the orbital currents by their conversion into charge currents and the resulting terahertz emission. We show that the orbital currents extraordinarily predominate the light-induced spin currents in Ni-based systems, whereas only spin currents can be detected with CoFeB-based systems. In addition, the analysis of the time delays of the terahertz pulses leads to relevant information on the velocity and propagation length of orbital carriers. Our finding of light-induced orbital currents and our observation of their conversion into charge currents opens new avenues in orbitronics, including the development of orbitronic terahertz devices.

Voltage-based magnetization switching and reading in magnetoelectric spin-orbit nanodevices

As CMOS technologies face challenges in dimensional and voltage scaling, the demand for novel logic devices has never been greater, with spin-based devices offering scaling potential, at the cost of significantly high switching energies. Alternatively, magnetoelectric materials are predicted to enable low-power magnetization control, a solution with limited device-level results. Here, we demonstrate voltage-based magnetization switching and reading in nanodevices at room temperature, enabled by exchange coupling between multiferroic BiFeO3 and ferromagnetic CoFe, for writing, and spin-to-charge current conversion between CoFe and Pt, for reading. We show that, upon the electrical switching of the BiFeO3, the magnetization of the CoFe can be reversed, giving rise to different voltage outputs. Through additional microscopy techniques, magnetization reversal is linked with the polarization state and antiferromagnetic cycloid propagation direction in the BiFeO3. This study constitutes the building block for magnetoelectric spin-orbit logic, opening a new avenue for low-power beyond-CMOS technologies.

Probing impact on magnetic behavior of cobalt layer grown on thick MoS 2 layer

Understanding the metal-semiconductor heterostructure interface is crucial for the development of spintronic devices. One of the prospective candidates and extensively studied semiconductors is molybdenum disulfide (MoS2 ). Herein, utilizing Kerr microscopy, we investigated the impact of thick MoS2 on the magnetic properties of the 10 nm Co layer. A comparative study on Co / MoS 2 and Co/Si shows that coercivity increased by 77% and the Kerr signal decreased by 26% compared to Co grown on Si substrate. In addition, the Co domain structure significantly changed when grown on MoS2 . The plausible reason for the observed magnetic behavior can be that the Co interacts differently at the interface of MoS2 as compared to Si. Therefore, our studies investigate the interfacial effect on the magnetic properties of Co grown on thick MoS2 layer. Furthermore, our results will help in developing next-generation spintronic devices.

Proposal for All-Electrical Skyrmion Detection in van der Waals Tunnel Junctions

A major challenge for magnetic skyrmions in atomically thin van der Waals (vdW) materials is reliable skyrmion detection. Here, based on rigorous first-principles calculations, we show that all-electrical skyrmion detection is feasible in two-dimensional vdW magnets via scanning tunneling microscopy (STM) and in planar tunnel junctions. We use the nonequilibrium Green's function method for quantum transport in planar junctions, including self-energy due to electrodes and working conditions, going beyond the standard Tersoff-Hamann approximation. We obtain a very large tunneling anisotropic magnetoresistance (TAMR) around the Fermi energy for a graphite/Fe3GeTe2/germanene/graphite vdW tunnel junction. For atomic-scale skyrmions, the noncollinear magnetoresistance (NCMR) reaches giant values. We trace the origin of the NCMR to spin mixing between spin-up and -down states of pz and dz2 character at the surface atoms. Both TAMR and NCMR are drastically enhanced in tunnel junctions with respect to STM geometry due to orbital symmetry matching at the interface.

Resonant generation of propagating second-harmonic spin waves in nano-waveguides

Generation of second-harmonic waves is one of the universal nonlinear phenomena that have found numerous technical applications in many modern technologies, in particular, in photonics. This phenomenon also has great potential in the field of magnonics, which considers the use of spin waves in magnetic nanostructures to implement wave-based signal processing and computing. However, due to the strong frequency dependence of the phase velocity of spin waves, resonant phase-matched generation of second-harmonic spin waves has not yet been achieved in practice. Here, we show experimentally that such a process can be realized using a combination of different modes of nano-sized spin-wave waveguides based on low-damping magnetic insulators. We demonstrate that our approach enables efficient spatially-extended energy transfer between interacting waves, which can be controlled by the intensity of the initial wave and the static magnetic field.

Field-free spin-orbit torque switching in ferromagnetic trilayers at sub-ns timescales

Current-induced spin torques enable the electrical control of the magnetization with low energy consumption. Conventional magnetic random access memory (MRAM) devices rely on spin-transfer torque (STT), this however limits MRAM applications because of the nanoseconds incubation delay and associated endurance issues. A potential alternative to STT is spin-orbit torque (SOT). However, for practical, high-speed SOT devices, it must satisfy three conditions simultaneously, i.e., field-free switching at short current pulses, short incubation delay, and low switching current. Here, we demonstrate field-free SOT switching at sub-ns timescales in a CoFeB/Ti/CoFeB ferromagnetic trilayer, which satisfies all three conditions. In this trilayer, the bottom magnetic layer or its interface generates spin currents with polarizations in both in-plane and out-of-plane components. The in-plane component reduces the incubation time, while the out-of-plane component realizes field-free switching at a low current. Our results offer a field-free SOT solution for energy-efficient scalable MRAM applications.

Homochiral antiferromagnetic merons, antimerons and bimerons realized in synthetic antiferromagnets

The ever-growing demand for device miniaturization and energy efficiency in data storage and computing technology has prompted a shift towards antiferromagnetic topological spin textures as information carriers. This shift is primarily owing to their negligible stray fields, leading to higher possible device density and potentially ultrafast dynamics. We realize in this work such chiral in-plane topological antiferromagnetic spin textures namely merons, antimerons, and bimerons in synthetic antiferromagnets by concurrently engineering the effective perpendicular magnetic anisotropy, the interlayer exchange coupling, and the magnetic compensation ratio. We demonstrate multimodal vector imaging of the three-dimensional Néel order parameter, revealing the topology of those spin textures and a globally well-defined chirality, which is a crucial requirement for controlled current-induced dynamics. Our analysis reveals that the interplay between interlayer exchange and interlayer magnetic dipolar interactions plays a key role to significantly reduce the critical strength of the Dzyaloshinskii-Moriya interaction required to stabilize topological spin textures, such as antiferromagnetic merons, in synthetic antiferromagnets, making them a promising platform for next-generation spintronics applications.

Single-Shot Laser-Induced Switching of an Exchange Biased Antiferromagnet

Ultrafast manipulation of magnetic order has challenged the understanding of the fundamental and dynamic properties of magnetic materials. So far single-shot magnetic switching has been limited to ferrimagnetic alloys, multilayers, and designed ferromagnetic (FM) heterostructures. In FM/antiferromagnetic (AFM) bilayers, exchange bias (He ) arises from the interfacial exchange coupling between the two layers and reflects the microscopic orientation of the antiferromagnet. Here the possibility of single-shot switching of the antiferromagnet (change of the sign and amplitude of He ) with a single femtosecond laser pulse in IrMn/CoGd bilayers is demonstrated. The manipulation is demonstrated in a wide range of fluences for different layer thicknesses and compositions. Atomistic simulations predict ultrafast switching and recovery of the AFM magnetization on a timescale of 2 ps. The results provide the fastest and the most energy-efficient method to set the exchange bias and pave the way to potential applications for ultrafast spintronic devices.

Creation of Room-Temperature Sub-100 nm Antiferromagnetic Skyrmions in an Antiferromagnet IrMn through Interfacial Exchange Coupling

Antiferromagnetic (AFM) skyrmions are magnetic vortices composed of antiparallell-aligned neighboring spins. In stark contrast to conventional skyrmions based on ferromagnetic order, AFM skyrmions have vanished stray fields, higher response frequencies, and rectified translational motion driven by an external force. Therefore, AFM skyrmions promise highly efficient spintronics devices with high bit mobility and density. Nevertheless, the experimental realization of intrinsic AFM skyrmions remains elusive. Here, we show that AFM skyrmions can be nucleated via interfacial exchange coupling at the surface of a room-temperature AFM material, IrMn, exploiting the particular response from uncompensated moments to the thermal annealing and imprinting effects. Further systematic magnetic characterizations validate the existence of such an AFM order at the IrMn/CoFeB interfaces. Such AFM skyrmions have a typical size of 100 nm, which presents pronounced robustness against field and temperature. Our work opens new pathways for magnetic topological devices based on AFM skyrmions.

True amplification of spin waves in magnonic nano-waveguides

Magnonic nano-devices exploit magnons - quanta of spin waves - to transmit and process information within a single integrated platform that has the potential to outperform traditional semiconductor-based electronics. The main missing cornerstone of this information nanotechnology is an efficient scheme for the amplification of propagating spin waves. The recent discovery of spin-orbit torque provided an elegant mechanism for propagation losses compensation. While partial compensation of the spin-wave losses has been achieved, true amplification - the exponential increase in the spin-wave intensity during propagation - has so far remained elusive. Here we evidence the operating conditions to achieve unambiguous amplification using clocked nanoseconds-long spin-orbit torque pulses in magnonic nano-waveguides, where the effective magnetization has been engineered to be close to zero to suppress the detrimental magnon scattering. We achieve an exponential increase in the intensity of propagating spin waves up to 500% at a propagation distance of several micrometers.

Colossal Magnetoresistive Switching Induced by d0 Ferromagnetism of MgO in a Semiconductor Nanochannel Device with Ferromagnetic Fe/MgO Electrodes

Exploring potential spintronic functionalities in resistive switching (RS) devices is of great interest for creating new applications, such as multifunctional resistive random-access memory and novel neuromorphic computing devices. In particular, the importance of the spin-triplet state of cation vacancies in oxide materials, which is induced by localized and strong O-2p on-site Coulomb interactions, in RS devices has been overlooked. d0 ferromagnetism sometimes appears due to the spin-triplet state and ferromagnetic Zener's double exchange interactions between cation vacancies, which are occasionally strong enough to make nonmagnetic oxides ferromagnetic. Here, for the first time, anomalous and colossal magneto-RS (CMRS) with very high magnetic field dependence is demonstrated by utilizing an unconventional RS device composed of a Ge nanochannel with all-epitaxial single-crystalline Fe/MgO electrodes. The device shows colossal and unusual behavior as the threshold voltage and ON/OFF ratio strongly depend on a magnetic field, which is controllable with an applied voltage. This new phenomenon is attributed to the formation of d0 -ferromagnetic filaments by attractive Mg vacancies due to the spin-triplet states with ferromagnetic double exchange interactions and the ferromagnetic proximity effect of Fe on MgO. The findings will allow the development of energy-efficient CMRS devices with multifield susceptibility.

Spin-EPR-pair separation by conveyor-mode single electron shuttling in Si/SiGe

Long-ranged coherent qubit coupling is a missing function block for scaling up spin qubit based quantum computing solutions. Spin-coherent conveyor-mode electron-shuttling could enable spin quantum-chips with scalable and sparse qubit-architecture. Its key feature is the operation by only few easily tuneable input terminals and compatibility with industrial gate-fabrication. Single electron shuttling in conveyor-mode in a 420 nm long quantum bus has been demonstrated previously. Here we investigate the spin coherence during conveyor-mode shuttling by separation and rejoining an Einstein-Podolsky-Rosen (EPR) spin-pair. Compared to previous work we boost the shuttle velocity by a factor of 10000. We observe a rising spin-qubit dephasing time with the longer shuttle distances due to motional narrowing and estimate the spin-shuttle infidelity due to dephasing to be 0.7% for a total shuttle distance of nominal 560 nm. Shuttling several loops up to an accumulated distance of 3.36 μm, spin-entanglement of the EPR pair is still detectable, giving good perspective for our approach of a shuttle-based scalable quantum computing architecture in silicon.

Mechanisms of Electrical Switching of Ultrathin CoO/Pt Bilayers

We study current-induced switching of the Néel vector in CoO/Pt bilayers to understand the underlying antiferromagnetic switching mechanism. Surprisingly, we find that for ultrathin CoO/Pt bilayers electrical pulses along the same path can lead to an increase or decrease of the spin Hall magnetoresistance signal, depending on the current density of the pulse. By comparing these results to XMLD-PEEM imaging of the antiferromagnetic domain structure before and after the application of current pulses, we reveal the details of the reorientation of the Néel vector in ultrathin CoO(4 nm). This allows us to understand how opposite resistance changes can result from a thermomagnetoelastic switching mechanism. Importantly, our spatially resolved imaging shows that regions where the current pulses are applied and regions further away exhibit different switched spin structures, which can be explained by a spin-orbit torque-based switching mechanism that can dominate in very thin films.

Bifurcation to complex dynamics in largely modulated voltage-controlled parametric oscillator

An experimental demonstration of a parametric oscillation of a magnetization in a ferromagnet was performed recently by applying a microwave voltage, indicating the potential to be applied in a switching method in non-volatile memories. In the previous works, the modulation of a perpendicular magnetic anisotropy field produced by the microwave voltage was small compared with an external magnetic field pointing in an in-plane direction. A recent trend is, however, opposite, where an efficiency of the voltage controlled magnetic anisotropy (VCMA) effect is increased significantly by material research and thus, the modulated magnetic anisotropy field can be larger than the external magnetic field. Here, we solved the Landau-Lifshitz-Gilbert equation numerically and investigated the magnetization dynamics driven under a wide range of the microwave VCMA effect. We evaluated bifurcation diagrams, which summarize local maxima of the magnetization dynamics. For low modulation amplitudes, the local maximum is a single point because the dynamics is the periodic parametric oscillation. The bifurcation diagrams show distributions of the local maxima when the microwave magnetic anisotropy field becomes larger than the external magnetic field. The appearance of this broadened distribution indicates complex dynamics such as chaotic and transient-chaotic behaviors, which were confirmed from an analysis of temporal dynamics.

Acoustic-driven magnetic skyrmion motion

Magnetic skyrmions have great potential for developing novel spintronic devices. The electrical manipulation of skyrmions has mainly relied on current-induced spin-orbit torques. Recently, it was suggested that the skyrmions could be more efficiently manipulated by surface acoustic waves (SAWs), an elastic wave that can couple with magnetic moment via the magnetoelastic effect. Here, by designing on-chip piezoelectric transducers that produce propagating SAW pulses, we experimentally demonstrate the directional motion of Néel-type skyrmions in Ta/CoFeB/MgO/Ta multilayers. We find that the shear horizontal wave effectively drives the motion of skyrmions, whereas the elastic wave with longitudinal and shear vertical displacements (Rayleigh wave) cannot produce the motion of skyrmions. A longitudinal motion along the SAW propagation direction and a transverse motion due to topological charge are simultaneously observed and further confirmed by our micromagnetic simulations. This work demonstrates that acoustic waves could be another promising approach for manipulating skyrmions, which could offer new opportunities for ultra-low power skyrmionics.

Non-hermiticity in spintronics: oscillation death in coupled spintronic nano-oscillators through emerging exceptional points

The emergence of exceptional points (EPs) in the parameter space of a non-hermitian (2D) eigenvalue problem has long been interest in mathematical physics, however, only in the last decade entered the scope of experiments. In coupled systems, EPs give rise to unique physical phenomena, and enable the development of highly sensitive sensors. Here, we demonstrate at room temperature the emergence of EPs in coupled spintronic nanoscale oscillators and exploit the system's non-hermiticity. We observe amplitude death of self-oscillations and other complex dynamics, and develop a linearized non-hermitian model of the coupled spintronic system, which describes the main experimental features. The room temperature operation, and CMOS compatibility of our spintronic nanoscale oscillators means that they are ready to be employed in a variety of applications, such as field, current or rotation sensors, radiofrequeny and wireless devices, and in dedicated neuromorphic computing hardware. Furthermore, their unique and versatile properties, notably their large nonlinear behavior, open up unprecedented perspectives in experiments as well as in theory on the physics of exceptional points expanding to strongly nonlinear systems.

Revealing emergent magnetic charge in an antiferromagnet with diamond quantum magnetometry

Whirling topological textures play a key role in exotic phases of magnetic materials and are promising for logic and memory applications. In antiferromagnets, these textures exhibit enhanced stability and faster dynamics with respect to their ferromagnetic counterparts, but they are also difficult to study due to their vanishing net magnetic moment. One technique that meets the demand of highly sensitive vectorial magnetic field sensing with negligible backaction is diamond quantum magnetometry. Here we show that an archetypal antiferromagnet-haematite-hosts a rich tapestry of monopolar, dipolar and quadrupolar emergent magnetic charge distributions. The direct read-out of the previously inaccessible vorticity of an antiferromagnetic spin texture provides the crucial connection to its magnetic charge through a duality relation. Our work defines a paradigmatic class of magnetic systems to explore two-dimensional monopolar physics, and highlights the transformative role that diamond quantum magnetometry could play in exploring emergent phenomena in quantum materials.

Manipulations of Electronic and Spin States in Co-Quantum Dot/WS2 Heterostructure on a Metal-Dielectric Composite Substrate by Controlling Interfacial Carriers

Charge and spin are two intrinsic attributes of carriers governing almost all of the physical processes and operation principles in materials. Here, we demonstrate the manipulation of electronic and spin states in designed Co-quantum dot/WS2 (Co-QDs/WS2) heterostructures by employing a metal-dielectric composite substrate and via scanning tunneling microscope. By repeatedly scanning under a unipolar bias, switching the bias polarity, or applying a pulse through nonmagnetic or magnetic tips, the Co-QDs morphologies exhibit a regular and reproducible transformation between bright and dark dots. First-principles calculations reveal that these tunable characters are attributed to the variation of density of states and the transition of magnetic anisotropy energy induced by carrier accumulation. It also suggests that the metal-dielectric composite substrate is successful in creating the interfacial potential for carrier accumulation and realizes the electrically controllable modulations. These results will promote the exploration of electron-matter interactions in quantum systems and provide an innovative way to facilitate the development of spintronics.

Magnetic Skyrmions above Room Temperature in a van der Waals Ferromagnet Fe3 GaTe2

2D van der Waals (vdW) ferromagnetic crystals are a promising platform for innovative spintronic devices based on magnetic skyrmions, thanks to their high flexibility and atomic thickness stability. However, room-temperature skyrmion-hosting vdW materials are scarce, which poses a challenge for practical applications. In this study, a chemical vapor transport (CVT) approach is employed to synthesize Fe3 GaTe2 crystals and room-temperature Néel skyrmions are observed in Fe3 GaTe2 nanoflakes above 58 nm in thickness through in situ Lorentz transmission electron microscopy (L-TEM). Upon an optimized field cooling procedure, zero-field hexagonal skyrmion lattices are successfully generated in nanoflakes with an extended thickness range (30-180 nm). Significantly, these skyrmion lattices remain stable up to 355 K, setting a new record for the highest temperature at which skyrmions can be hosted. The research establishes Fe3 GaTe2 as an emerging above-room-temperature skyrmion-hosting vdW material, holding great promise for future spintronics.

Direct Observation of Room-Temperature Magnetic Skyrmion Motion Driven by Ultra-Low Current Density in Van Der Waals Ferromagnets

The recent discovery of room-temperature ferromagnetism in 2D van der Waals (vdW) materials, such as Fe3 GaTe2 (FGaT), has garnered significant interest in offering a robust platform for 2D spintronic applications. Various fundamental operations essential for the realization of 2D spintronics devices are experimentally confirmed using these materials at room temperature, such as current-induced magnetization switching or tunneling magnetoresistance. Nevertheless, the potential applications of magnetic skyrmions in FGaT systems at room temperature remain unexplored. In this work, the current-induced generation of magnetic skyrmions in FGaT flakes employing high-resolution magnetic transmission soft X-ray microscopy is introduced, supported by a feasible mechanism based on thermal effects. Furthermore, direct observation of the current-induced magnetic skyrmion motion at room temperature in FGaT flakes is presented with ultra-low threshold current density. This work highlights the potential of FGaT as a foundation for room-temperature-operating 2D skyrmion device applications.

Effective electrical manipulation of a topological antiferromagnet by orbital torques

The electrical control of the non-trivial topology in Weyl antiferromagnets is of great interest for the development of next-generation spintronic devices. Recent studies suggest that the spin Hall effect can switch the topological antiferromagnetic order. However, the switching efficiency remains relatively low. Here, we demonstrate the effective manipulation of antiferromagnetic order in the Weyl semimetal Mn3Sn using orbital torques originating from either metal Mn or oxide CuOx. Although Mn3Sn can convert orbital current to spin current on its own, we find that inserting a heavy metal layer, such as Pt, of appropriate thickness can effectively reduce the critical switching current density by one order of magnitude. In addition, we show that the memristor-like switching behaviour of Mn3Sn can mimic the potentiation and depression processes of a synapse with high linearity-which may be beneficial for constructing accurate artificial neural networks. Our work paves a way for manipulating the topological antiferromagnetic order and may inspire more high-performance antiferromagnetic functional devices.

Damping and Interfacial Dzyaloshinskii-Moriya Interaction in Thulium Iron Garnet/Bismuth-Substituted Yttrium Iron Garnet Bilayers

Thin films of ferrimagnetic iron garnets can exhibit useful magnetic properties, including perpendicular magnetic anisotropy (PMA) and high domain wall velocities. In particular, bismuth-substituted yttrium iron garnet (BiYIG) films grown on garnet substrates have a low Gilbert damping but zero Dzyaloshinskii-Moriya interaction (DMI), whereas thulium iron garnet (TmIG) films have higher damping but a nonzero DMI. We report the damping and DMI of thulium-substituted BiYIG (BiYTmIG) and TmIG|BiYIG bilayer thin films deposited on (111) substituted gadolinium gallium garnet and neodymium gallium garnet (NGG) substrates. The films are epitaxial and exhibit PMA. BiYIG|TmIG bilayers have a damping value that is an order of magnitude lower than that of TmIG, and BiYIG|TmIG|NGG have DMI of 0.0145 ± 0.0011 mJ/m2, similar to that of TmIG|NGG. The bilayer therefore provides a combination of DMI and moderate damping, useful for the development of high-speed spin orbit torque-driven devices.

Spin-resolved topology and partial axion angles in three-dimensional insulators

Symmetry-protected topological crystalline insulators (TCIs) have primarily been characterized by their gapless boundary states. However, in time-reversal- ([Formula: see text]-) invariant (helical) 3D TCIs-termed higher-order TCIs (HOTIs)-the boundary signatures can manifest as a sample-dependent network of 1D hinge states. We here introduce nested spin-resolved Wilson loops and layer constructions as tools to characterize the intrinsic bulk topological properties of spinful 3D insulators. We discover that helical HOTIs realize one of three spin-resolved phases with distinct responses that are quantitatively robust to large deformations of the bulk spin-orbital texture: 3D quantum spin Hall insulators (QSHIs), "spin-Weyl" semimetals, and [Formula: see text]-doubled axion insulator (T-DAXI) states with nontrivial partial axion angles indicative of a 3D spin-magnetoelectric bulk response and half-quantized 2D TI surface states originating from a partial parity anomaly. Using ab-initio calculations, we demonstrate that β-MoTe2 realizes a spin-Weyl state and that α-BiBr hosts both 3D QSHI and T-DAXI regimes.

Quantifying the Magnetic Interactions Governing Chiral Spin Textures Using Deep Neural Networks

The interplay of magnetic interactions in chiral multilayer films gives rise to nanoscale topological spin textures that form attractive elements for next-generation computing. Quantifying these interactions requires several specialized, time-consuming, and resource-intensive experimental techniques. Imaging of ambient domain configurations presents a promising avenue for high-throughput extraction of parent magnetic interactions. Here, we present a machine learning (ML)-based approach to simultaneously determine the key magnetic interactions─symmetric exchange, chiral exchange, and anisotropy─governing the chiral domain phenomenology in multilayers, using a single binarized image of domain configurations. Our convolutional neural network model, trained and validated on over 10,000 domain images, achieved R2 > 0.85 in predicting the parameters and independently learned the physical interdependencies between magnetic parameters. When applied to microscopy data acquired across samples, our model-predicted parameter trends are consistent with those of independent experimental measurements. These results establish ML-driven techniques as valuable, high-throughput complements to conventional determination of magnetic interactions and serve to accelerate materials and device development for nanoscale electronics.

Magnon-mediated qubit coupling determined via dissipation measurements

Controlled interaction between localized and delocalized solid-state spin systems offers a compelling platform for on-chip quantum information processing with quantum spintronics. Hybrid quantum systems (HQSs) of localized nitrogen-vacancy (NV) centers in diamond and delocalized magnon modes in ferrimagnets-systems with naturally commensurate energies-have recently attracted significant attention, especially for interconnecting isolated spin qubits at length-scales far beyond those set by the dipolar coupling. However, despite extensive theoretical efforts, there is a lack of experimental characterization of the magnon-mediated interaction between NV centers, which is necessary to develop such hybrid quantum architectures. Here, we experimentally determine the magnon-mediated NV-NV coupling from the magnon-induced self-energy of NV centers. Our results are quantitatively consistent with a model in which the NV center is coupled to magnons by dipolar interactions. This work provides a versatile tool to characterize HQSs in the absence of strong coupling, informing future efforts to engineer entangled solid-state systems.

Thermodynamic properties and switching dynamics of perpendicular shape anisotropy MRAM

The power consumption of modern random access memory (RAM) has been a motivation for the development of low-power non-volatile magnetic RAM (MRAM). Based on a CoFeB/MgO magnetic tunnel junction, MRAM must satisfy high thermal stability and a low writing current while being scaled down to a sub-20 nm size to compete with the densities of current RAM technology. A recent development has been to exploit perpendicular shape anisotropy along the easy axis by creating tower structures, with the free layers' thickness (along the easy axis) being larger than its width. Here we use an atomistic model to explore the temperature dependent properties of thin cylindrical MRAM towers of 5 nm diameter while scaling down the free layer from 48 to 8 nm thick. We find thermal fluctuations are a significant driving force for the switching mechanism at operational temperatures by analysing the switching field distribution from hysteresis data. We find that a reduction of the free layer thickness below 18 nm rapidly loses shape anisotropy, and consequently stability, even at 0 K. Additionally, there is a change in the switching mechanism as the free layer is reduced to 8 nm. Coherent rotation is observed for the 8 nm free layer, while all taller towers demonstrate incoherent rotation via a propagated domain wall.

How spin relaxes and dephases in bulk halide perovskites

Spintronics in halide perovskites has drawn significant attention in recent years, due to their highly tunable spin-orbit fields and intriguing interplay with lattice symmetry. Here, we perform first-principles calculations to determine the spin relaxation time (T1) and ensemble spin dephasing time ([Formula: see text]) in a prototype halide perovskite, CsPbBr3. To accurately capture spin dephasing in external magnetic fields we determine the Landé g-factor from first principles and take it into account in our calculations. These allow us to predict intrinsic spin lifetimes as an upper bound for experiments, identify the dominant spin relaxation pathways, and evaluate the dependence on temperature, external fields, carrier density, and impurities. We find that the Fröhlich interaction that dominates carrier relaxation contributes negligibly to spin relaxation, consistent with the spin-conserving nature of this interaction. Our theoretical approach may lead to new strategies to optimize spin and carrier transport properties.

Antiferromagnetic interlayer exchange coupled Co68B32/Ir/Pt multilayers

Synthetic antiferromagnetic structures can exhibit the advantages of high velocity similarly to antiferromagnets with the additional benefit of being imaged and read-out through techniques applied to ferromagnets. Here, we explore the potential and limits of synthetic antiferromagnets to uncover ways to harness their valuable properties for applications. Two synthetic antiferromagnetic systems have been engineered and systematically investigated to provide an informed basis for creating devices with maximum potential for data storage, logic devices, and skyrmion racetrack memories. The two systems considered are (system 1) CoB/Ir/Pt of N repetitions with Ir inducing the negative coupling between the ferromagnetic layers and (system 2) two ferromagnetically coupled multilayers of CoB/Ir/Pt, coupled together antiferromagnetically with an Ir layer. From the hysteresis, it is found that system 1 shows stable antiferromagnetic interlayer exchange coupling between each magnetic layer up to N = 7. Using Kerr imaging, the two ferromagnetic multilayers in system 2 are shown to undergo separate maze-like switches during hysteresis. Both systems are also studied as a function of temperature and show different behaviors. Micromagnetic simulations predict that in both systems the skyrmion Hall angle is suppressed with the skyrmion velocity five times higher in system 1 than system 2.

Chiral Skyrmions Interacting with Chiral Flowers

The chiral nature of active matter plays an important role in the dynamics of active matter interacting with chiral structures. Skyrmions are chiral objects, and their interactions with chiral nanostructures can lead to intriguing phenomena. Here, we explore the random-walk dynamics of a thermally activated chiral skyrmion interacting with a chiral flower-like obstacle in a ferromagnetic layer, which could create topology-dependent outcomes. It is a spontaneous mesoscopic order-from-disorder phenomenon driven by the thermal fluctuations and topological nature of skyrmions that exists only in ferromagnetic and ferrimagnetic systems. The interactions between the skyrmions and chiral flowers at finite temperatures can be utilized to control the skyrmion position and distribution without applying any external driving force or temperature gradient. The phenomenon that thermally activated skyrmions are dynamically coupled to chiral flowers may provide a new way to design topological sorting devices.

Large exchange bias enhancement and control of ferromagnetic energy landscape by solid-state hydrogen gating

Voltage control of exchange bias is desirable for spintronic device applications, however dynamic modulation of the unidirectional coupling energy in ferromagnet/antiferromagnet bilayers has not yet been achieved. Here we show that by solid-state hydrogen gating, perpendicular exchange bias can be enhanced by > 100% in a reversible and analog manner, in a simple Co/Co0.8Ni0.2O heterostructure at room temperature. We show that this phenomenon is an isothermal analog to conventional field-cooling and that sizable changes in average coupling energy can result from small changes in AFM grain rotatability. Using this method, we show that a bi-directionally stable ferromagnet can be made unidirectionally stable, with gate voltage alone. This work provides a means to dynamically reprogram exchange bias, with broad applicability in spintronics and neuromorphic computing, while simultaneously illuminating fundamental aspects of exchange bias in polycrystalline films.