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Zhang Z, Tang W, Chen J, Zhang Y, Zhang C, Fu M, Huang F, Li X, Zhang C, Wu Z, Wu Y, Kang J. Manipulations of Electronic and Spin States in Co-Quantum Dot/WS 2 Heterostructure on a Metal-Dielectric Composite Substrate by Controlling Interfacial Carriers. Nano Lett 2024; 24:1415-1422. [PMID: 38232178 DOI: 10.1021/acs.nanolett.3c04831] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 01/19/2024]
Abstract
Charge and spin are two intrinsic attributes of carriers governing almost all of the physical processes and operation principles in materials. Here, we demonstrate the manipulation of electronic and spin states in designed Co-quantum dot/WS2 (Co-QDs/WS2) heterostructures by employing a metal-dielectric composite substrate and via scanning tunneling microscope. By repeatedly scanning under a unipolar bias, switching the bias polarity, or applying a pulse through nonmagnetic or magnetic tips, the Co-QDs morphologies exhibit a regular and reproducible transformation between bright and dark dots. First-principles calculations reveal that these tunable characters are attributed to the variation of density of states and the transition of magnetic anisotropy energy induced by carrier accumulation. It also suggests that the metal-dielectric composite substrate is successful in creating the interfacial potential for carrier accumulation and realizes the electrically controllable modulations. These results will promote the exploration of electron-matter interactions in quantum systems and provide an innovative way to facilitate the development of spintronics.
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Affiliation(s)
- Zongnan Zhang
- Department of Physics, Engineering Research Centre for Micro-Nano Optoelectronic Materials and Devices at Education Ministry, Fujian Provincial Key Laboratory of Semiconductor Materials and Applications, Xiamen University, Xiamen 361005, People's Republic of China
| | - Weiqing Tang
- Gusu Laboratory of Materials, Suzhou 215000, Jiangsu, People's Republic of China
| | - Jiajun Chen
- Department of Physics, Engineering Research Centre for Micro-Nano Optoelectronic Materials and Devices at Education Ministry, Fujian Provincial Key Laboratory of Semiconductor Materials and Applications, Xiamen University, Xiamen 361005, People's Republic of China
| | - Yuxiang Zhang
- Department of Physics, Engineering Research Centre for Micro-Nano Optoelectronic Materials and Devices at Education Ministry, Fujian Provincial Key Laboratory of Semiconductor Materials and Applications, Xiamen University, Xiamen 361005, People's Republic of China
| | - Chenhao Zhang
- Department of Physics, Engineering Research Centre for Micro-Nano Optoelectronic Materials and Devices at Education Ministry, Fujian Provincial Key Laboratory of Semiconductor Materials and Applications, Xiamen University, Xiamen 361005, People's Republic of China
| | - Mingming Fu
- Department of Physics, Engineering Research Centre for Micro-Nano Optoelectronic Materials and Devices at Education Ministry, Fujian Provincial Key Laboratory of Semiconductor Materials and Applications, Xiamen University, Xiamen 361005, People's Republic of China
| | - Feihong Huang
- Department of Physics, Engineering Research Centre for Micro-Nano Optoelectronic Materials and Devices at Education Ministry, Fujian Provincial Key Laboratory of Semiconductor Materials and Applications, Xiamen University, Xiamen 361005, People's Republic of China
| | - Xu Li
- Department of Physics, Engineering Research Centre for Micro-Nano Optoelectronic Materials and Devices at Education Ministry, Fujian Provincial Key Laboratory of Semiconductor Materials and Applications, Xiamen University, Xiamen 361005, People's Republic of China
| | - Chunmiao Zhang
- Department of Physics, Engineering Research Centre for Micro-Nano Optoelectronic Materials and Devices at Education Ministry, Fujian Provincial Key Laboratory of Semiconductor Materials and Applications, Xiamen University, Xiamen 361005, People's Republic of China
| | - Zhiming Wu
- Department of Physics, Engineering Research Centre for Micro-Nano Optoelectronic Materials and Devices at Education Ministry, Fujian Provincial Key Laboratory of Semiconductor Materials and Applications, Xiamen University, Xiamen 361005, People's Republic of China
| | - Yaping Wu
- Department of Physics, Engineering Research Centre for Micro-Nano Optoelectronic Materials and Devices at Education Ministry, Fujian Provincial Key Laboratory of Semiconductor Materials and Applications, Xiamen University, Xiamen 361005, People's Republic of China
| | - Junyong Kang
- Department of Physics, Engineering Research Centre for Micro-Nano Optoelectronic Materials and Devices at Education Ministry, Fujian Provincial Key Laboratory of Semiconductor Materials and Applications, Xiamen University, Xiamen 361005, People's Republic of China
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Han J, Yoon SG, Lee WH, Jin H, Cho YH, Kim YS. Ionic Diffusion-Driven Ionovoltaic Transducer for Probing Ion-Molecular Interactions at Solid-Liquid Interface. Adv Sci (Weinh) 2022; 9:e2103038. [PMID: 34719879 PMCID: PMC8728816 DOI: 10.1002/advs.202103038] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/23/2021] [Revised: 08/14/2021] [Indexed: 05/09/2023]
Abstract
Ion-solid surface interactions are one of the fundamental principles in liquid-interfacing devices ranging from various electrochemical systems to electrolyte-driven energy conversion devices. The interplays between these two phases, especially containing charge carriers in the solid layer, work as a pivotal role in the operation of these devices, but corresponding details of those effects remain as unrevealed issues in academic fields. Herein, an ion-charge carrier interaction at an electrolyte-semiconductor interface is interrogated with an ion-dynamics-induced (ionovoltaic) energy transducer, controlled by interfacial self-assembled molecules. An electricity generating mechanism from interfacial ionic diffusion is elucidated in terms of the ion-charge carrier interaction, originated from a dipole potential effect of the self-assembled molecular layer (SAM). In addition, this effect is found to be modulated via chemical functionalization of the interfacial molecular layer and transition metal ion complexation therein. With the aiding of surface analytic techniques and a liquid-interfacing Hall measurement, electrical behaviors of the device depending on the magnitude of the ion-ligand complexation are interrogated, thereby demonstrating the ion-charge carrier interplays spanning at electrolyte-SAM-semiconductor interface. Hence, this system can be applied to study molecular interactions, including chemical and physical influences, occurring at the solid-liquid interfacial region.
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Affiliation(s)
- Junghyup Han
- School of Chemical and Biological Engineeringand Institute of Chemical ProcessesCollege of EngineeringSeoul National UniversityGwanak‐guSeoul08826Republic of Korea
| | - Sun Geun Yoon
- Program in Nano Science and TechnologyGraduate School of Convergence Science and TechnologySeoul National UniversityGwanak‐guSeoul08826Republic of Korea
| | - Won Hyung Lee
- Program in Nano Science and TechnologyGraduate School of Convergence Science and TechnologySeoul National UniversityGwanak‐guSeoul08826Republic of Korea
| | - Huding Jin
- Program in Nano Science and TechnologyGraduate School of Convergence Science and TechnologySeoul National UniversityGwanak‐guSeoul08826Republic of Korea
| | - Yong Hyun Cho
- Program in Nano Science and TechnologyGraduate School of Convergence Science and TechnologySeoul National UniversityGwanak‐guSeoul08826Republic of Korea
| | - Youn Sang Kim
- School of Chemical and Biological Engineeringand Institute of Chemical ProcessesCollege of EngineeringSeoul National UniversityGwanak‐guSeoul08826Republic of Korea
- Program in Nano Science and TechnologyGraduate School of Convergence Science and TechnologySeoul National UniversityGwanak‐guSeoul08826Republic of Korea
- Advanced Institute of Convergence TechnologySuwon16229Republic of Korea
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Abstract
The effects of ion force field polarizability on the interfacial electrostatic properties of approximately 1 M aqueous solutions of NaCl, CsCl, and NaI are investigated using molecular dynamics simulations employing both nonpolarizable and Drude-polarizable ion sets. Differences in computed depth-dependent orientational distributions, "permanent" and induced dipole and quadrupole moment profiles, and interfacial potentials are obtained for both ion sets to further elucidate how ion polarizability affects interfacial electrostatic properties among the various salts relative to pure water. We observe that the orientations and induced dipoles of water molecules are more strongly perturbed in the presence of polarizable ions via a stronger ionic double layer effect arising from greater charge separation. Both anions and cations exhibit enhanced induced dipole moments and strong z alignment in the vicinity of the Gibbs dividing surface (GDS) with the magnitude of the anion induced dipoles being nearly an order of magnitude larger than those of the cations and directed into the vapor phase. Depth-dependent profiles for the trace and z z components of the water molecular quadrupole moment tensors reveal 40% larger quadrupole moments in the bulk phase relative to the vapor which mimics a similar observed 40% increase in the average water dipole moment. Across the GDS, the water molecular quadrupole moments increase nonmonotonically (in contrast to the water dipoles) and exhibit a locally reduced contribution just below the surface due to both orientational and polarization effects. Computed interfacial potentials for the nonpolarizable salts yield values 20-60 mV more positive than pure water and increase by an additional 30-100 mV when ion polarizability is included. A rigorous decomposition of the total interfacial potential into ion monopole, water and ion dipole, and water quadrupole components reveals that a very strong, positive ion monopole contribution is offset by negative contributions from all other potential sources. Water quadrupole components modulated by the water density contribute significantly to the observed interfacial potential increments and almost entirely explain observed differences in the interfacial potentials for the two chloride salts. By lumping all remaining nonquadrupole interfacial potential contributions into a single "effective" dipole potential, we observe that the ratio of quadrupole to "effective" dipole contributions range from 2:1 in CsCl to 1:1.5 in NaI, suggesting that both contributions are comparably important in determining the interfacial potential increments. We also find that oscillations in the quadrupole potential in the double layer region are opposite in sign and partially cancel those of the "effective" dipole potential.
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Affiliation(s)
- G. Lee Warren
- Department of Chemistry and Biochemistry, University of Delaware, Newark, Delaware 19716, USA
| | - Sandeep Patel
- Department of Chemistry and Biochemistry, University of Delaware, Newark, Delaware 19716, USA
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