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Xue R, Beer M, Seidler I, Humpohl S, Tu JS, Trellenkamp S, Struck T, Bluhm H, Schreiber LR. Si/SiGe QuBus for single electron information-processing devices with memory and micron-scale connectivity function. Nat Commun 2024; 15:2296. [PMID: 38485971 PMCID: PMC10940717 DOI: 10.1038/s41467-024-46519-x] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Grants] [Track Full Text] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 12/12/2023] [Accepted: 02/26/2024] [Indexed: 03/18/2024] Open
Abstract
The connectivity within single carrier information-processing devices requires transport and storage of single charge quanta. Single electrons have been adiabatically transported while confined to a moving quantum dot in short, all-electrical Si/SiGe shuttle device, called quantum bus (QuBus). Here we show a QuBus spanning a length of 10 μm and operated by only six simply-tunable voltage pulses. We introduce a characterization method, called shuttle-tomography, to benchmark the potential imperfections and local shuttle-fidelity of the QuBus. The fidelity of the single-electron shuttle across the full device and back (a total distance of 19 μm) is (99.7 ± 0.3) %. Using the QuBus, we position and detect up to 34 electrons and initialize a register of 34 quantum dots with arbitrarily chosen patterns of zero and single-electrons. The simple operation signals, compatibility with industry fabrication and low spin-environment-interaction in 28Si/SiGe, promises long-range spin-conserving transport of spin qubits for quantum connectivity in quantum computing architectures.
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Affiliation(s)
- Ran Xue
- JARA-FIT Institute for Quantum Information, Forschungszentrum Jülich GmbH and RWTH Aachen University, Aachen, Germany
| | - Max Beer
- JARA-FIT Institute for Quantum Information, Forschungszentrum Jülich GmbH and RWTH Aachen University, Aachen, Germany
| | - Inga Seidler
- JARA-FIT Institute for Quantum Information, Forschungszentrum Jülich GmbH and RWTH Aachen University, Aachen, Germany
| | - Simon Humpohl
- JARA-FIT Institute for Quantum Information, Forschungszentrum Jülich GmbH and RWTH Aachen University, Aachen, Germany
- ARQUE Systems GmbH, Aachen, Germany
| | - Jhih-Sian Tu
- Helmholtz Nano Facility (HNF), Forschungszentrum Jülich, Jülich, Germany
| | - Stefan Trellenkamp
- Helmholtz Nano Facility (HNF), Forschungszentrum Jülich, Jülich, Germany
| | - Tom Struck
- JARA-FIT Institute for Quantum Information, Forschungszentrum Jülich GmbH and RWTH Aachen University, Aachen, Germany
- ARQUE Systems GmbH, Aachen, Germany
| | - Hendrik Bluhm
- JARA-FIT Institute for Quantum Information, Forschungszentrum Jülich GmbH and RWTH Aachen University, Aachen, Germany
- ARQUE Systems GmbH, Aachen, Germany
| | - Lars R Schreiber
- JARA-FIT Institute for Quantum Information, Forschungszentrum Jülich GmbH and RWTH Aachen University, Aachen, Germany.
- ARQUE Systems GmbH, Aachen, Germany.
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Struck T, Volmer M, Visser L, Offermann T, Xue R, Tu JS, Trellenkamp S, Cywiński Ł, Bluhm H, Schreiber LR. Spin-EPR-pair separation by conveyor-mode single electron shuttling in Si/SiGe. Nat Commun 2024; 15:1325. [PMID: 38351007 PMCID: PMC10864332 DOI: 10.1038/s41467-024-45583-7] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 08/11/2023] [Accepted: 01/29/2024] [Indexed: 02/16/2024] Open
Abstract
Long-ranged coherent qubit coupling is a missing function block for scaling up spin qubit based quantum computing solutions. Spin-coherent conveyor-mode electron-shuttling could enable spin quantum-chips with scalable and sparse qubit-architecture. Its key feature is the operation by only few easily tuneable input terminals and compatibility with industrial gate-fabrication. Single electron shuttling in conveyor-mode in a 420 nm long quantum bus has been demonstrated previously. Here we investigate the spin coherence during conveyor-mode shuttling by separation and rejoining an Einstein-Podolsky-Rosen (EPR) spin-pair. Compared to previous work we boost the shuttle velocity by a factor of 10000. We observe a rising spin-qubit dephasing time with the longer shuttle distances due to motional narrowing and estimate the spin-shuttle infidelity due to dephasing to be 0.7% for a total shuttle distance of nominal 560 nm. Shuttling several loops up to an accumulated distance of 3.36 μm, spin-entanglement of the EPR pair is still detectable, giving good perspective for our approach of a shuttle-based scalable quantum computing architecture in silicon.
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Affiliation(s)
- Tom Struck
- JARA-FIT Institute for Quantum Information, Forschungszentrum Jülich GmbH and RWTH Aachen University, Aachen, Germany
- ARQUE Systems GmbH, Aachen, Germany
| | - Mats Volmer
- JARA-FIT Institute for Quantum Information, Forschungszentrum Jülich GmbH and RWTH Aachen University, Aachen, Germany
| | - Lino Visser
- JARA-FIT Institute for Quantum Information, Forschungszentrum Jülich GmbH and RWTH Aachen University, Aachen, Germany
| | - Tobias Offermann
- JARA-FIT Institute for Quantum Information, Forschungszentrum Jülich GmbH and RWTH Aachen University, Aachen, Germany
| | - Ran Xue
- JARA-FIT Institute for Quantum Information, Forschungszentrum Jülich GmbH and RWTH Aachen University, Aachen, Germany
| | - Jhih-Sian Tu
- Helmholtz Nano Facility (HNF), Forschungszentrum Jülich, Jülich, Germany
| | - Stefan Trellenkamp
- Helmholtz Nano Facility (HNF), Forschungszentrum Jülich, Jülich, Germany
| | - Łukasz Cywiński
- Institute of Physics, Polish Academy of Sciences, Warsaw, Poland
| | - Hendrik Bluhm
- JARA-FIT Institute for Quantum Information, Forschungszentrum Jülich GmbH and RWTH Aachen University, Aachen, Germany
- ARQUE Systems GmbH, Aachen, Germany
| | - Lars R Schreiber
- JARA-FIT Institute for Quantum Information, Forschungszentrum Jülich GmbH and RWTH Aachen University, Aachen, Germany.
- ARQUE Systems GmbH, Aachen, Germany.
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Tu JS, Borghardt S, Grützmacher D, Kardynał BE. Experimental observation of a negative grey trion in an electron-rich WSe 2 monolayer. J Phys Condens Matter 2019; 31:415701. [PMID: 31272091 DOI: 10.1088/1361-648x/ab2f56] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.2] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/09/2023]
Abstract
We measure the evolution of low temperature photoluminescence in a WSe2 monolayer with increasing electron concentration level. By comparing non-resonant and resonant laser excitation, we find that the formation of negative trions is facilitated by very efficient phonon emission. The most prominent line in photolumienscence spectra in the intermediate range of carrier concentrations (below [Formula: see text] cm-2) is found to be 66 meV below the bright negative trion. Its measured properties, including low oscillator strength and the temperature dependence point to an interacting bright intervalley and dark intervalley trion state as the origin of the line.
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Affiliation(s)
- Jhih-Sian Tu
- Peter Grünberg Institute 9 (PGI-9), Forschungszentrum Jülich, 52425 Jülich, Germany
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Mishchenko A, Tu JS, Cao Y, Gorbachev RV, Wallbank JR, Greenaway MT, Morozov VE, Morozov SV, Zhu MJ, Wong SL, Withers F, Woods CR, Kim YJ, Watanabe K, Taniguchi T, Vdovin EE, Makarovsky O, Fromhold TM, Fal'ko VI, Geim AK, Eaves L, Novoselov KS. Twist-controlled resonant tunnelling in graphene/boron nitride/graphene heterostructures. Nat Nanotechnol 2014; 9:808-813. [PMID: 25194946 DOI: 10.1038/nnano.2014.187] [Citation(s) in RCA: 78] [Impact Index Per Article: 7.8] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/25/2014] [Accepted: 08/05/2014] [Indexed: 05/28/2023]
Abstract
Recent developments in the technology of van der Waals heterostructures made from two-dimensional atomic crystals have already led to the observation of new physical phenomena, such as the metal-insulator transition and Coulomb drag, and to the realization of functional devices, such as tunnel diodes, tunnel transistors and photovoltaic sensors. An unprecedented degree of control of the electronic properties is available not only by means of the selection of materials in the stack, but also through the additional fine-tuning achievable by adjusting the built-in strain and relative orientation of the component layers. Here we demonstrate how careful alignment of the crystallographic orientation of two graphene electrodes separated by a layer of hexagonal boron nitride in a transistor device can achieve resonant tunnelling with conservation of electron energy, momentum and, potentially, chirality. We show how the resonance peak and negative differential conductance in the device characteristics induce a tunable radiofrequency oscillatory current that has potential for future high-frequency technology.
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Affiliation(s)
- A Mishchenko
- School of Physics &Astronomy, University of Manchester, Oxford Road, Manchester M13 9PL, UK
| | - J S Tu
- Centre for Mesoscience &Nanotechnology, University of Manchester, Manchester M13 9PL, UK
| | - Y Cao
- Centre for Mesoscience &Nanotechnology, University of Manchester, Manchester M13 9PL, UK
| | - R V Gorbachev
- Centre for Mesoscience &Nanotechnology, University of Manchester, Manchester M13 9PL, UK
| | - J R Wallbank
- Physics Department, Lancaster University, Lancaster University LA1 4YB, UK
| | - M T Greenaway
- School of Physics and Astronomy, University of Nottingham, Nottingham NG7 2RD, UK
| | - V E Morozov
- School of Physics &Astronomy, University of Manchester, Oxford Road, Manchester M13 9PL, UK
| | - S V Morozov
- Institute of Microelectronics Technology and High Purity Materials, Russian Academy of Sciences, Chernogolovka 142432, Russia
| | - M J Zhu
- School of Physics &Astronomy, University of Manchester, Oxford Road, Manchester M13 9PL, UK
| | - S L Wong
- School of Physics &Astronomy, University of Manchester, Oxford Road, Manchester M13 9PL, UK
| | - F Withers
- School of Physics &Astronomy, University of Manchester, Oxford Road, Manchester M13 9PL, UK
| | - C R Woods
- School of Physics &Astronomy, University of Manchester, Oxford Road, Manchester M13 9PL, UK
| | - Y-J Kim
- 1] Centre for Mesoscience &Nanotechnology, University of Manchester, Manchester M13 9PL, UK [2] Department of Chemistry, Seoul National University, Seoul 151-747, Korea
| | - K Watanabe
- National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan
| | - T Taniguchi
- National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan
| | - E E Vdovin
- 1] School of Physics and Astronomy, University of Nottingham, Nottingham NG7 2RD, UK [2] Institute of Microelectronics Technology and High Purity Materials, Russian Academy of Sciences, Chernogolovka 142432, Russia
| | - O Makarovsky
- School of Physics and Astronomy, University of Nottingham, Nottingham NG7 2RD, UK
| | - T M Fromhold
- School of Physics and Astronomy, University of Nottingham, Nottingham NG7 2RD, UK
| | - V I Fal'ko
- Physics Department, Lancaster University, Lancaster University LA1 4YB, UK
| | - A K Geim
- 1] School of Physics &Astronomy, University of Manchester, Oxford Road, Manchester M13 9PL, UK [2] Centre for Mesoscience &Nanotechnology, University of Manchester, Manchester M13 9PL, UK
| | - L Eaves
- 1] School of Physics &Astronomy, University of Manchester, Oxford Road, Manchester M13 9PL, UK [2] School of Physics and Astronomy, University of Nottingham, Nottingham NG7 2RD, UK
| | - K S Novoselov
- School of Physics &Astronomy, University of Manchester, Oxford Road, Manchester M13 9PL, UK
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Kretinin AV, Cao Y, Tu JS, Yu GL, Jalil R, Novoselov KS, Haigh SJ, Gholinia A, Mishchenko A, Lozada M, Georgiou T, Woods CR, Withers F, Blake P, Eda G, Wirsig A, Hucho C, Watanabe K, Taniguchi T, Geim AK, Gorbachev RV. Electronic properties of graphene encapsulated with different two-dimensional atomic crystals. Nano Lett 2014; 14:3270-6. [PMID: 24844319 DOI: 10.1021/nl5006542] [Citation(s) in RCA: 198] [Impact Index Per Article: 19.8] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/22/2023]
Abstract
Hexagonal boron nitride is the only substrate that has so far allowed graphene devices exhibiting micrometer-scale ballistic transport. Can other atomically flat crystals be used as substrates for making quality graphene heterostructures? Here we report on our search for alternative substrates. The devices fabricated by encapsulating graphene with molybdenum or tungsten disulfides and hBN are found to exhibit consistently high carrier mobilities of about 60 000 cm(2) V(-1) s(-1). In contrast, encapsulation with atomically flat layered oxides such as mica, bismuth strontium calcium copper oxide, and vanadium pentoxide results in exceptionally low quality of graphene devices with mobilities of ∼1000 cm(2) V(-1) s(-1). We attribute the difference mainly to self-cleansing that takes place at interfaces between graphene, hBN, and transition metal dichalcogenides. Surface contamination assembles into large pockets allowing the rest of the interface to become atomically clean. The cleansing process does not occur for graphene on atomically flat oxide substrates.
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Affiliation(s)
- A V Kretinin
- Centre for Mesoscience and Nanotechnology, ‡School of Physics and Astronomy, and §School of Materials, University of Manchester , Manchester M13 9PL, United Kingdom
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