Non-KAM classical chaos topology for electrons in superlattice minibands determines the inter-well quantum transition rates

We investigate the quantum-classical correspondence for a particle tunnelling through a periodic superlattice structure with an applied bias voltage and an additional tilted harmonic oscillator potential. We show that the quantum mechanical tunnelling rate between neighbouring quantum wells of the superlattice is determined by the topology of the phase trajectories of the analogous classical system. This result also enables us to estimate, with high accuracy, the tunnelling rate between two spatially displaced simple harmonic oscillator states using a classical model, and thus gain new insight into this generic quantum phenomenon. This finding opens new directions for exploring and understanding the quantum-classical correspondence principle and quantum jumps between displaced harmonic oscillators, which are important in many branches of natural science.

Out-of-equilibrium criticalities in graphene superlattices

In thermodynamic equilibrium, current in metallic systems is carried by electronic states near the Fermi energy, whereas the filled bands underneath contribute little to conduction. Here, we describe a very different regime in which carrier distribution in graphene and its superlattices is shifted so far from equilibrium that the filled bands start playing an essential role, leading to a critical-current behavior. The criticalities develop upon the velocity of electron flow reaching the Fermi velocity. Key signatures of the out-of-equilibrium state are current-voltage characteristics that resemble those of superconductors, sharp peaks in differential resistance, sign reversal of the Hall effect, and a marked anomaly caused by the Schwinger-like production of hot electron-hole plasma. The observed behavior is expected to be common to all graphene-based superlattices.

Graphene's non-equilibrium fermions reveal Doppler-shifted magnetophonon resonances accompanied by Mach supersonic and Landau velocity effects

Oscillatory magnetoresistance measurements on graphene have revealed a wealth of novel physics. These phenomena are typically studied at low currents. At high currents, electrons are driven far from equilibrium with the atomic lattice vibrations so that their kinetic energy can exceed the thermal energy of the phonons. Here, we report three non-equilibrium phenomena in monolayer graphene at high currents: (i) a “Doppler-like” shift and splitting of the frequencies of the transverse acoustic (TA) phonons emitted when the electrons undergo inter-Landau level (LL) transitions; (ii) an intra-LL Mach effect with the emission of TA phonons when the electrons approach supersonic speed, and (iii) the onset of elastic inter-LL transitions at a critical carrier drift velocity, analogous to the superfluid Landau velocity. All three quantum phenomena can be unified in a single resonance equation. They offer avenues for research on out-of-equilibrium phenomena in other two-dimensional fermion systems.

Magneto-oscillations have revealed many interesting phenomena in graphene and quantum Hall systems, but they are typically measured at low currents and in equilibrium. Here, the authors report several non-equilibrium quantum effects observed in magneto-oscillations in graphene at high currents.

Phonon-Assisted Resonant Tunneling of Electrons in Graphene-Boron Nitride Transistors

We observe a series of sharp resonant features in the differential conductance of graphene-hexagonal boron nitride-graphene tunnel transistors over a wide range of bias voltages between 10 and 200 mV. We attribute them to electron tunneling assisted by the emission of phonons of well-defined energy. The bias voltages at which they occur are insensitive to the applied gate voltage and hence independent of the carrier densities in the graphene electrodes, so plasmonic effects can be ruled out. The phonon energies corresponding to the resonances are compared with the lattice dispersion curves of graphene-boron nitride heterostructures and are close to peaks in the single phonon density of states.

Twist-controlled resonant tunnelling in graphene/boron nitride/graphene heterostructures

Recent developments in the technology of van der Waals heterostructures made from two-dimensional atomic crystals have already led to the observation of new physical phenomena, such as the metal-insulator transition and Coulomb drag, and to the realization of functional devices, such as tunnel diodes, tunnel transistors and photovoltaic sensors. An unprecedented degree of control of the electronic properties is available not only by means of the selection of materials in the stack, but also through the additional fine-tuning achievable by adjusting the built-in strain and relative orientation of the component layers. Here we demonstrate how careful alignment of the crystallographic orientation of two graphene electrodes separated by a layer of hexagonal boron nitride in a transistor device can achieve resonant tunnelling with conservation of electron energy, momentum and, potentially, chirality. We show how the resonance peak and negative differential conductance in the device characteristics induce a tunable radiofrequency oscillatory current that has potential for future high-frequency technology.

Subterahertz chaos generation by coupling a superlattice to a linear resonator

We investigate the effects of a linear resonator on the high-frequency dynamics of electrons in devices exhibiting negative differential conductance. We show that the resonator strongly affects both the dc and ac transport characteristics of the device, inducing quasiperiodic and high-frequency chaotic current oscillations. The theoretical findings are confirmed by experimental measurements of a GaAs/AlAs miniband semiconductor superlattice coupled to a linear microstrip resonator. Our results are applicable to other active solid state devices and provide a generic approach for developing modern chaos-based high-frequency technologies including broadband chaotic wireless communication and superfast random-number generation.

Controlling high-frequency collective electron dynamics via single-particle complexity

We demonstrate, through experiment and theory, enhanced high-frequency current oscillations due to magnetically-induced conduction resonances in superlattices. Strong increase in the ac power originates from complex single-electron dynamics, characterized by abrupt resonant transitions between unbound and localized trajectories, which trigger and shape propagating charge domains. Our data demonstrate that external fields can tune the collective behavior of quantum particles by imprinting configurable patterns in the single-particle classical phase space.